摘要:
An electrical circuit member comprises an electrical connecting member, said electrical connecting member having a holding member comprising an electrically insulating material and a plurality of electroconductive members embedded at predetermined intervals within said holding member, each of said plurality of electroconductive members being insulated with said electrically insulating material and also having the ends of said electroconductive member exposed on both surfaces of said holding member; and an electrical circuit part, said electrical circuit part having connecting portions to be connected to said electroconductive member or said wiring pattern exposed on both surfaces of said holding member, and being connected to at least one surface of said holding member.
摘要:
A method of making an electric circuit device by connecting first and second electrical circuit components through an electrical connecting member. The method comprises effecting internal heating such as supersonic heating, high-frequency induction heating, high-frequency dielectric heating or microwave heating at first connecting regions between the connecting portions of the first electrical circuit component and the first ends of the electrically conductive members of the electrical connecting member. The same internal heating may also be effected at second connecting regions between the connecting portions of the second electrical circuit component and the second ends of the electrically conductive members of the electrical connecting member. In consequence, alloying takes place in first and second connecting regions so as to connect the first and second electrical circuit components through the electrical connecting member.
摘要:
An electrical connecting member for use in an electrical connection for connecting a first electrical circuit component on a side thereof and a second electrical circuit component on another side thereof, said electrical connecting member comprising: a plurality of layers each layer having a plurality of conductive members and an insulative holder for holding said plurality of conductive members, wherein said plurality of conductive members are arranged such that each conductive member has one end exposed on one surface of said layer and another end exposed on another surface of said layer, and makes electric contact with at least one of a conductive member immediately below and a conductive member immediately above, but does not contact conductive members laterally offset thereof, and wherein said conductive members have diameters that are substantially equal to each other, between said one surface of said layer and said another surface of said layer; and said plurality of layers are stacked such that said plurality of conductive members in one layer are connected with said plurality of conductive members in another layer, and are held by said insulative holder with a different pitch shifted slightly from said plurality of conductive members in another layer. It is a further object to provide an electrical member and an electrical circuit device which employ such an electrical connecting member.
摘要:
A method of producing an electrical connection member includes the steps of applying a carrier containing a light-sensitive resin onto a substrate member, forming holes in portions of the carrier to form a pattern and expose the substrate member in the holes, filling each hole in the carrier with an electrically conductive member, and removing the substrate member from the carrier. With this method, it is possible to easily produce electrical connection members in which high density electrical connecting portions can be provided and in which the reliability and security of electrical connections can be improved.
摘要:
An electric circuit device comprises an electric connecting member comprising a support member made of an electrically insulating material and a plurality of electrically conductive members buried in the support member and being isolated from one another. The ends of one side of the electrically conductive members are exposed at one surface of the support member, and the ends on the other side of the electrically conductive members are exposed at another surface of the support member. A first electric circuit component has connecting regions connected to the one set of ends of the electrically conductive members, and a second electric circuit component has connecting regions connected to the other set of ends of the electrically conductive members. Some of the electrically conductive members can be arranged in a zigzag pattern, and the pattern of the exposed ends of at least one electrically conductive member is wave-like or S-like.
摘要:
An electric circuit apparatus comprises an electrically connecting member including a holding body made of an electrically insulating material and a plurality of electrically conductive members embedded in the holding body. First end portions of the electrically conductive member extend through a first side of the holding body and second end portions of the electrically conductive member extend through the other side of the holding body. A plurality of electric circuit components are connected to the second end portions of the electrically conductive members.
摘要:
A method of producing electrical connection members includes the steps of forming a carrier on a first electrically conductive member, etching holes in portions of the carrier to expose first electrically conductive member in the holes, and etching the portions of the first electrically conductive member which are exposed in the respective holes to form recesses in the first electrically conductive member so that each of the recesses has a diameter larger than the diameter of a corresponding one of the holes. The respective holes formed in the carrier are filled with second electrically conductive members, and then the first electrically conductive member is removed from the carrier. With this method, it is possible to easily produce electrical connection members in which high density electrical connecting portions can be provided and in which the reliability and security of electrical connections can be improved.
摘要:
A manufacturing method of a semiconductor device comprises a process of doping conductive impurities in a silicon carbide substrate, a process of forming a cap layer on a surface of the silicon carbide substrate, a process of activating the conductive impurities doped in the silicon carbide substrate, a process of oxidizing the cap layer after a first annealing process, and a process of removing the oxidized cap layer. It is preferred that the cap layer is formed from material that includes metal carbide. Since the oxidation onset temperature of metal carbide is comparatively low, the oxidization of the cap layer becomes easy if metal carbide is included in the cap layer. Specifically, it is preferred that the cap layer is formed from metal carbide that has an oxidation onset temperature of 1000 degrees Celsius or below, such as tantalum carbide.
摘要:
A method of making a semiconductor device includes forming a p-type semiconductor region to an n-type semiconductor substrate in such a manner that the p-type semiconductor region is partially exposed to a top surface of the semiconductor substrate, forming a Schottky electrode of a first material in such a manner that the Schottky electrode is in Schottky contact with an n-type semiconductor region exposed to the top surface of the semiconductor substrate, and forming an ohmic electrode of a second material different from the first material in such a manner that the ohmic electrode is in ohmic contact with the exposed p-type semiconductor region. The Schottky electrode is formed earlier than the ohmic electrode.
摘要:
A method of making a semiconductor device includes forming a p-type semiconductor region to an n-type semiconductor substrate in such a manner that the p-type semiconductor region is partially exposed to a top surface of the semiconductor substrate, forming a Schottky electrode of a first material in such a manner that the Schottky electrode is in Schottky contact with an n-type semiconductor region exposed to the top surface of the semiconductor substrate, and forming an ohmic electrode of a second material different from the first material in such a manner that the ohmic electrode is in ohmic contact with the exposed p-type semiconductor region. The Schottky electrode is formed earlier than the ohmic electrode.