Probe method for measuring part to be measured by use thereof and
electrical circuit member
    1.
    发明授权
    Probe method for measuring part to be measured by use thereof and electrical circuit member 失效
    用于测量使用的部件和电路部件的探针方法

    公开(公告)号:US5606263A

    公开(公告)日:1997-02-25

    申请号:US620393

    申请日:1996-03-22

    IPC分类号: G01R1/073

    CPC分类号: G01R1/07307

    摘要: An electrical circuit member comprises an electrical connecting member, said electrical connecting member having a holding member comprising an electrically insulating material and a plurality of electroconductive members embedded at predetermined intervals within said holding member, each of said plurality of electroconductive members being insulated with said electrically insulating material and also having the ends of said electroconductive member exposed on both surfaces of said holding member; and an electrical circuit part, said electrical circuit part having connecting portions to be connected to said electroconductive member or said wiring pattern exposed on both surfaces of said holding member, and being connected to at least one surface of said holding member.

    摘要翻译: 电路构件包括电连接构件,所述电连接构件具有保持构件,所述保持构件包括电绝缘材料和在所述保持构件内以预定间隔嵌入的多个导电构件,所述多个导电构件中的每一个与所述电气绝缘材料绝缘 绝缘材料,并且还使所述导电构件的端部暴露在所述保持构件的两个表面上; 和电路部分,所述电路部分具有连接到所述导电部件或暴露在所述保持部件的两个表面上的所述布线图形的连接部分,并连接到所述保持部件的至少一个表面。

    Manufacturing method of a semiconductor device
    8.
    发明授权
    Manufacturing method of a semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号:US07855131B2

    公开(公告)日:2010-12-21

    申请号:US12385782

    申请日:2009-04-20

    IPC分类号: H01L21/322

    摘要: A manufacturing method of a semiconductor device comprises a process of doping conductive impurities in a silicon carbide substrate, a process of forming a cap layer on a surface of the silicon carbide substrate, a process of activating the conductive impurities doped in the silicon carbide substrate, a process of oxidizing the cap layer after a first annealing process, and a process of removing the oxidized cap layer. It is preferred that the cap layer is formed from material that includes metal carbide. Since the oxidation onset temperature of metal carbide is comparatively low, the oxidization of the cap layer becomes easy if metal carbide is included in the cap layer. Specifically, it is preferred that the cap layer is formed from metal carbide that has an oxidation onset temperature of 1000 degrees Celsius or below, such as tantalum carbide.

    摘要翻译: 半导体器件的制造方法包括在碳化硅衬底中掺杂导电杂质的工艺,在碳化硅衬底的表面上形成覆盖层的工艺,激活掺杂在碳化硅衬底中的导电杂质的工艺, 在第一退火工艺之后氧化盖层的工艺,以及去除氧化的盖层的工艺。 优选的是,盖层由包括金属碳化物的材料形成。 由于金属碳化物的氧化开始温度相对较低,如果在盖层中包括金属碳化物,则盖层的氧化变得容易。 具体而言,优选盖层由氧化开始温度为1000℃以下的金属碳化物形成,例如碳化钽。

    Semiconductor device making method
    9.
    发明授权
    Semiconductor device making method 有权
    半导体器件制造方法

    公开(公告)号:US08168485B2

    公开(公告)日:2012-05-01

    申请号:US12461205

    申请日:2009-08-04

    IPC分类号: H01L29/812 H01L21/338

    摘要: A method of making a semiconductor device includes forming a p-type semiconductor region to an n-type semiconductor substrate in such a manner that the p-type semiconductor region is partially exposed to a top surface of the semiconductor substrate, forming a Schottky electrode of a first material in such a manner that the Schottky electrode is in Schottky contact with an n-type semiconductor region exposed to the top surface of the semiconductor substrate, and forming an ohmic electrode of a second material different from the first material in such a manner that the ohmic electrode is in ohmic contact with the exposed p-type semiconductor region. The Schottky electrode is formed earlier than the ohmic electrode.

    摘要翻译: 制造半导体器件的方法包括:以p型半导体区域部分地暴露于半导体衬底的顶表面,形成p型半导体区域到n型半导体衬底,形成肖特基电极 以使肖特基电极与暴露于半导体衬底的顶表面的n型半导体区域肖特基接触的方式形成第一材料,并且以这种方式形成不同于第一材料的第二材料的欧姆电极 欧姆电极与暴露的p型半导体区域欧姆接触。 肖特基电极比欧姆电极早。

    Semiconductor device and method of making the same
    10.
    发明申请
    Semiconductor device and method of making the same 有权
    半导体器件及其制造方法

    公开(公告)号:US20100032730A1

    公开(公告)日:2010-02-11

    申请号:US12461205

    申请日:2009-08-04

    IPC分类号: H01L29/812 H01L21/338

    摘要: A method of making a semiconductor device includes forming a p-type semiconductor region to an n-type semiconductor substrate in such a manner that the p-type semiconductor region is partially exposed to a top surface of the semiconductor substrate, forming a Schottky electrode of a first material in such a manner that the Schottky electrode is in Schottky contact with an n-type semiconductor region exposed to the top surface of the semiconductor substrate, and forming an ohmic electrode of a second material different from the first material in such a manner that the ohmic electrode is in ohmic contact with the exposed p-type semiconductor region. The Schottky electrode is formed earlier than the ohmic electrode.

    摘要翻译: 制造半导体器件的方法包括:以p型半导体区域部分地暴露于半导体衬底的顶表面,形成p型半导体区域到n型半导体衬底,形成肖特基电极 以使肖特基电极与暴露于半导体衬底的顶表面的n型半导体区域肖特基接触的方式形成第一材料,并且以这种方式形成不同于第一材料的第二材料的欧姆电极 欧姆电极与暴露的p型半导体区域欧姆接触。 肖特基电极比欧姆电极早。