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    Method for lithography for optimizing process conditions
    5.
    发明授权
    Method for lithography for optimizing process conditions 失效
    光刻方法优化工艺条件

    公开(公告)号：US07767385B2

    公开(公告)日：2010-08-03

    申请号：US11371820

    申请日：2006-03-09

    申请人： Carl E. Larson ,  Sharee J. McNab ,  Steven E. Steen ,  Raman G. Viswanathan ,  Gregory M. Wallraff

    发明人： Carl E. Larson ,  Sharee J. McNab ,  Steven E. Steen ,  Raman G. Viswanathan ,  Gregory M. Wallraff

    IPC分类号： G03F7/20

    CPC分类号： G03F7/2022

    摘要： A method of lithography is disclosed, which allows for independent resist process optimization of two or more exposure steps that are performed on a single resist layer. By providing for a separate post-exposure bake after each resist exposure step, pattern resolution for each exposure can be optimized. The method can generally be used with different lithographic techniques, and is well-suited for hybrid lithography. It has been applied to the fabrication of a device, in which the active area and the gate levels are defined in separate mask levels using hybrid lithography with an e-beam source and a 248 nm source respectively. Conditions for post-exposure bakes after the two exposure steps are independently adjusted to provide for optimized results.

    摘要翻译： 公开了一种光刻方法，其允许在单个抗蚀剂层上执行的两个或多个曝光步骤的独立抗蚀剂工艺优化。 通过在每个抗蚀剂曝光步骤之后提供单独的曝光后烘烤，可以优化每个曝光的图案分辨率。 该方法通常可以用于不同的光刻技术，并且非常适用于混合光刻。 已经将其应用于器件的制造，其中使用具有电子束源和248nm源的混合光刻将有源面积和栅极电平限定在分开的掩模级中。 独立调整两次曝光步骤后暴露后烘烤条件以提供优化结果。

    Photoresists for Visible Light Imaging
    6.
    发明申请
    Photoresists for Visible Light Imaging 有权
    可见光成像光刻胶

    公开(公告)号：US20080166669A1

    公开(公告)日：2008-07-10

    申请号：US12050589

    申请日：2008-03-18

    申请人： Gregory Breyta ,  Daniel Joseph Dawson ,  Carl E. Larson ,  Gregory Michael Wallraff

    发明人： Gregory Breyta ,  Daniel Joseph Dawson ,  Carl E. Larson ,  Gregory Michael Wallraff

    IPC分类号： G03F7/30

    CPC分类号： G03F7/0392 ,  G03F7/001 ,  G03F7/031 ,  G03F7/2004 ,  Y10S430/115 ,  Y10S430/127

    摘要： A method of creating patterned objects using a class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I): where Ar1 and Ar2 are independently selected from monocyclic aryl and monocyclic heteroaryl, R1 and R2 may be the same or different, and have the structure —X—R3 where X is O or S and R3 is C1-C6 hydrocarbyl or heteroatom-containing C1-C6 hydrocarbyl, and R4 and R5 are independently selected from the group consisting of hydrogen and —X—R3, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar1, Ar2, or R3 is O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.

    摘要翻译： 公开了一种使用一类光刻胶组合物形成图形物体的方法，其适用于可见光并且不需要曝光后烘烤步骤。 所公开的光致抗蚀剂优选是化学放大光致抗蚀剂，并含有具有式（I）结构的光敏剂：其中Ar 1和Ar 2独立地选自单环芳基和单环杂芳基 R 1和R 2可以相同或不同，并且具有结构-XR 3，其中X是O或S，R“ SUP> 3是C 1 -C 6烃基或含杂原子的C 1 -C 6 N >烃基，R 4和R 5独立地选自氢和-XR 3 O 3，或者如果各自的邻位 另一个可以一起形成五元或六元芳环，条件是含有Ar 1，Ar 2或R 0的任何杂原子 > 3 是O或S.还公开了所公开的光致抗蚀剂的使用，特别是用于制造全息衍射光栅。

    Photoresists for visible light imaging
    8.
    发明授权
    Photoresists for visible light imaging 有权
    用于可见光成像的光致抗蚀剂

    公开(公告)号：US07354692B2

    公开(公告)日：2008-04-08

    申请号：US11125971

    申请日：2005-05-09

    申请人： Gregory Breyta ,  Daniel Joseph Dawson ,  Carl E. Larson ,  Gregory Michael Wallraff

    发明人： Gregory Breyta ,  Daniel Joseph Dawson ,  Carl E. Larson ,  Gregory Michael Wallraff

    IPC分类号： G03F7/031 ,  G03F7/038 ,  G03F7/039

    CPC分类号： G03F7/0392 ,  G03F7/001 ,  G03F7/031 ,  G03F7/2004 ,  Y10S430/115 ,  Y10S430/127

    摘要： A class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I): where Ar1 and Ar2 are independently selected from monocyclic aryl and monocyclic heteroaryl, R1 and R2 may be the same or different, and have the structure —X—R3 where X is O or S and R3 is C1-C6 hydrocarbyl or heteroatom-containing C1-C6 hydrocarbyl, and R4 and R5 are independently selected from the group consisting of hydrogen and —X—R3, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar1, Ar2, or R3 is O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.

    摘要翻译： 公开了一类光刻抗蚀剂组合物，其适用于可见光并且不需要曝光后烘烤步骤。 所公开的光致抗蚀剂优选是化学放大光致抗蚀剂，并含有具有式（I）结构的光敏剂：其中Ar 1和Ar 2独立地选自单环芳基和单环杂芳基 R 1和R 2可以相同或不同，并且具有结构-XR 3，其中X是O或S，R“ SUP> 3是C 1 -C 6烃基或含杂原子的C 1 -C 6 N >烃基，R 4和R 5独立地选自氢和-XR 3 O 3，或者如果各自的邻位 另一个可以一起形成五元或六元芳环，条件是含有Ar 1，Ar 2或R 0的任何杂原子 > 3 是O或S.还公开了所公开的光致抗蚀剂的使用，特别是用于制造全息衍射光栅。

    Photoresists for visible light imaging
    10.
    发明授权
    Photoresists for visible light imaging 有权
    用于可见光成像的光致抗蚀剂

    公开(公告)号：US07807340B2

    公开(公告)日：2010-10-05

    申请号：US12050589

    申请日：2008-03-18

    申请人： Gregory Breyta ,  Daniel Joseph Dawson ,  Carl E. Larson ,  Gregory Michael Wallraff

    发明人： Gregory Breyta ,  Daniel Joseph Dawson ,  Carl E. Larson ,  Gregory Michael Wallraff

    IPC分类号： G03F7/26

    CPC分类号： G03F7/0392 ,  G03F7/001 ,  G03F7/031 ,  G03F7/2004 ,  Y10S430/115 ,  Y10S430/127

    摘要： A method of creating patterned objects using a class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I): where Ar1 and Ar2 are independently selected from monocyclic aryl and monocyclic heteroaryl, R1 and R2 may be the same or different, and have the structure —X—R3 where X is O or S and R3 is C1-C6 hydrocarbyl or heteroatom-containing C1-C6 hydrocarbyl, and R4 and R5 are independently selected from the group consisting of hydrogen and —X—R3, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar1, Ar2, or R3 is O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.

    摘要翻译： 公开了一种使用一类光刻胶组合物形成图形物体的方法，其适用于可见光并且不需要曝光后烘烤步骤。 所公开的光致抗蚀剂优选是化学放大光致抗蚀剂，并含有具有式（I）结构的光敏剂：其中Ar 1和Ar 2独立地选自单环芳基和单环杂芳基，R 1和R 2可以相同或不同， X-R3，其中X是O或S，R3是C1-C6烃基或含杂原子的C1-C6烃基，R4和R5独立地选自氢和-X-R3，或者如果每个 另一些可以一起形成五元或六元芳香环，条件是Ar1，Ar2或R3中含有的任何杂原子都是O或S.使用所公开的光致抗蚀剂，特别是用于制造全息 衍射光栅，也被公开。