公开(公告)号：US08319343B2

公开(公告)日：2012-11-27

申请号：US11469960

申请日：2006-09-05

申请人： Vance D. Archer, III ,  Michael C. Ayukawa ,  Mark A. Bachman ,  Daniel P. Chesire ,  Seung H. Kang ,  Taeho Kook ,  Sailesh M. Merchant ,  Kurt G. Steiner

发明人： Vance D. Archer, III ,  Michael C. Ayukawa ,  Mark A. Bachman ,  Daniel P. Chesire ,  Seung H. Kang ,  Taeho Kook ,  Sailesh M. Merchant ,  Kurt G. Steiner

IPC分类号： H01L23/48

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05556 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/13007 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01076 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2224/05552 ,  H01L2924/013

摘要： The present invention provides a solder bump structure. In one aspect, the solder bump structure is utilized in a semiconductor device, such as an integrated circuit. The semiconductor device comprises active devices located over a semiconductor substrate, interconnect layers comprising copper formed over the active devices, and an outermost metallization layer positioned over the interconnect layers. The outermost metallization layer comprises aluminum and includes at least one bond pad and at least one interconnect runner each electrically connected to an interconnect layer. An under bump metallization layer (UBM) is located over the bond pad, and a solder bump is located over the UBM.

摘要翻译： 本发明提供一种焊料凸块结构。 在一个方面，焊料凸块结构用于诸如集成电路的半导体器件中。 半导体器件包括位于半导体衬底之上的有源器件，包括形成在有源器件上的铜的互连层以及位于互连层上的最外层金属化层。 最外面的金属化层包括铝，并且包括至少一个接合焊盘和至少一个互连转子，每一个电连接到互连层。 凹凸金属化层（UBM）位于接合焊盘上方，焊料凸块位于UBM上方。

公开(公告)号：US08507317B2

公开(公告)日：2013-08-13

申请号：US13093032

申请日：2011-04-25

申请人： Mark A. Bachman ,  Donald S. Bitting ,  Sailesh Chittipeddi ,  Seung H. Kang ,  Sailesh M. Merchant

发明人： Mark A. Bachman ,  Donald S. Bitting ,  Sailesh Chittipeddi ,  Seung H. Kang ,  Sailesh M. Merchant

IPC分类号： H01L21/60

CPC分类号： H01L24/14 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02125 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05022 ,  H01L2224/05093 ,  H01L2224/05096 ,  H01L2224/05556 ,  H01L2224/05568 ,  H01L2224/13007 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00012 ,  H01L2224/05552

摘要： The invention provides, in one aspect, a semiconductor device that comprises an interconnect layer located over a semiconductor substrate. A passivation layer is located over the interconnect layer and having a solder bump support opening formed therein. Support pillars that comprise a conductive material are located within the solder bump support opening.

摘要翻译： 本发明在一个方面提供一种半导体器件，其包括位于半导体衬底之上的互连层。 钝化层位于互连层上并且具有形成在其中的焊料凸块支撑开口。 包括导电材料的支撑柱位于焊料凸块支撑开口内。

公开(公告)号：US20110195544A1

公开(公告)日：2011-08-11

申请号：US13093032

申请日：2011-04-25

申请人： Mark A. Bachman ,  Donald S. Bitting ,  Sailesh Chittipeddi ,  Seung H. Kang ,  Sailesh M. Merchant

发明人： Mark A. Bachman ,  Donald S. Bitting ,  Sailesh Chittipeddi ,  Seung H. Kang ,  Sailesh M. Merchant

IPC分类号： H01L21/60 ,  H01L21/50

CPC分类号： H01L24/14 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02125 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05022 ,  H01L2224/05093 ,  H01L2224/05096 ,  H01L2224/05556 ,  H01L2224/05568 ,  H01L2224/13007 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00012 ,  H01L2224/05552

摘要： The invention provides, in one aspect, a semiconductor device that comprises an interconnect layer located over a semiconductor substrate. A passivation layer is located over the interconnect layer and having a solder bump support opening formed therein. Support pillars that comprise a conductive material are located within the solder bump support opening.

摘要翻译： 本发明在一个方面提供一种半导体器件，其包括位于半导体衬底之上的互连层。 钝化层位于互连层上并且具有形成在其中的焊料凸块支撑开口。 包括导电材料的支撑柱位于焊料凸块支撑开口内。

公开(公告)号：US07952206B2

公开(公告)日：2011-05-31

申请号：US11459249

申请日：2006-07-21

申请人： Mark A. Bachman ,  Donald S. Bitting ,  Sailesh Chittipeddi ,  Seung H. Kang ,  Sailesh M. Merchant

发明人： Mark A. Bachman ,  Donald S. Bitting ,  Sailesh Chittipeddi ,  Seung H. Kang ,  Sailesh M. Merchant

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/14 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02125 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05022 ,  H01L2224/05093 ,  H01L2224/05096 ,  H01L2224/05556 ,  H01L2224/05568 ,  H01L2224/13007 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00012 ,  H01L2224/05552

摘要： The invention provides, in one aspect, a semiconductor device that comprises an interconnect layer located over a semiconductor substrate. A passivation layer is located over the interconnect layer and having a solder bump support opening formed therein. Support pillars that comprise a conductive material are located within the solder bump support opening.

摘要翻译： 本发明在一个方面提供一种半导体器件，其包括位于半导体衬底之上的互连层。 钝化层位于互连层上并且具有形成在其中的焊料凸块支撑开口。 包括导电材料的支撑柱位于焊料凸块支撑开口内。

公开(公告)号：US08742535B2

公开(公告)日：2014-06-03

申请号：US12969852

申请日：2010-12-16

申请人： Mark A. Bachman ,  Sailesh M. Merchant ,  John Osenbach

发明人： Mark A. Bachman ,  Sailesh M. Merchant ,  John Osenbach

IPC分类号： H01L23/52 ,  H01L21/76 ,  H01L21/44

CPC分类号： H01L21/76224 ,  H01L21/76837 ,  H01L21/76898 ,  H01L23/481 ,  H01L2221/1005 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing an IC, comprising providing a substrate having a first side and a second opposite side, forming a STI opening in the first side of the substrate and forming a partial TSV opening in the first side of the substrate and extending the partial TSV opening. The extended partial TSV opening is deeper into the substrate than the STI opening. The method also comprises filling the STI opening with a first solid material and filling the extended partial TSV opening with a second solid material. Neither the STI opening, the partial TSV opening, nor the extended partial TSV opening penetrate an outer surface of the second side of the substrate. At least either: the STI opening and the partial TSV opening are formed simultaneously, or, the STI opening and the extended partial TSV opening are filled simultaneously.

摘要翻译： 一种制造IC的方法，包括提供具有第一侧和第二相对侧的衬底，在衬底的第一侧中形成STI开口，并在衬底的第一侧形成部分TSV开口，并延伸部分TSV 开放 扩展的部分TSV开口比STI开口更深入衬底。 该方法还包括用第一固体材料填充STI开口并用第二固体材料填充延伸的部分TSV开口。 STI打开，部分TSV打开，也不延伸部分TSV开口都不穿透基板的第二侧的外表面。 至少同时形成STI开口和部分TSV开口，或者同时填充STI开口和延伸部分TSV开口。

公开(公告)号：US08987137B2

公开(公告)日：2015-03-24

申请号：US12969836

申请日：2010-12-16

申请人： Mark A. Bachman ,  Sailesh M. Merchant ,  John Osenbach

发明人： Mark A. Bachman ,  Sailesh M. Merchant ,  John Osenbach

IPC分类号： H01L21/44 ,  H01L21/768 ,  H01L25/065

CPC分类号： H01L21/76898 ,  H01L25/0657 ,  H01L2224/08145 ,  H01L2224/80894 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2225/06513 ,  H01L2225/06541

摘要： A method of manufacturing a through-substrate-via structure. The method comprises providing a substrate having a front-side and an opposite back-side. A through-substrate via opening is formed in the front-side of the substrate. The through-substrate-via opening does not penetrate an outer surface of the back-side of the substrate. The through-substrate-via opening is filled with a solid fill material. Portions of the substrate from the outer surface of the back-side of the substrate are removed to thereby expose the fill material. At least portions of the exposed fill material are removed to form a back-side through-substrate via opening that traverses an entire thickness of the substrate. The back-side through-substrate via opening is filled with an electrically conductive material.

摘要翻译： 一种制造贯通基板通孔结构的方法。 该方法包括提供具有前侧和相对背面的基板。 在基板的前侧形成贯通基板通路孔。 贯通基板通孔开口不穿透基板背面的外表面。 贯通基板通孔开口填充有固体填充材料。 从衬底的背面的外表面去除衬底的部分，从而露出填充材料。 暴露的填充材料的至少部分被去除以形成穿过衬底的整个厚度的背面贯穿衬底通孔开口。 背面贯通基板通孔开口填充有导电材料。

公开(公告)号：US08492911B2

公开(公告)日：2013-07-23

申请号：US12840016

申请日：2010-07-20

申请人： Mark A. Bachman ,  John W. Osenbach ,  Sailesh M. Merchant

发明人： Mark A. Bachman ,  John W. Osenbach ,  Sailesh M. Merchant

IPC分类号： H01L23/28

CPC分类号： H01L23/367 ,  H01L21/76895 ,  H01L23/3128 ,  H01L23/34 ,  H01L23/3677 ,  H01L23/5384 ,  H01L23/5386 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05025 ,  H01L2224/13025 ,  H01L2224/16225 ,  H01L2224/73253 ,  H01L2225/06517 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2924/01019 ,  H01L2924/01025 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H05K1/0201 ,  H01L2924/00

摘要： An electronic device includes an integrated circuit and a heat spreader. The integrated circuit includes a substrate with an active via located therein. The heat spreader includes a thermally conductive core. The active via is connected to a corresponding heat spreader via that passes through the thermally conductive core.

摘要翻译： 电子设备包括集成电路和散热器。 集成电路包括其中具有有源通孔的衬底。 散热器包括导热芯。 有源通孔经由导热芯通过相应的散热器连接。

公开(公告)号：US20120020028A1

公开(公告)日：2012-01-26

申请号：US12840016

申请日：2010-07-20

申请人： Mark A. Bachman ,  John W. Osenbach ,  Sailesh M. Merchant

发明人： Mark A. Bachman ,  John W. Osenbach ,  Sailesh M. Merchant

IPC分类号： H05K7/20 ,  F28F7/00 ,  H01L21/50

CPC分类号： H01L23/367 ,  H01L21/76895 ,  H01L23/3128 ,  H01L23/34 ,  H01L23/3677 ,  H01L23/5384 ,  H01L23/5386 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05025 ,  H01L2224/13025 ,  H01L2224/16225 ,  H01L2224/73253 ,  H01L2225/06517 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2924/01019 ,  H01L2924/01025 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H05K1/0201 ,  H01L2924/00

摘要： An electronic device includes an integrated circuit and a heat spreader. The integrated circuit includes a substrate with an active via located therein. The heat spreader includes a thermally conductive core. The active via is connected to a corresponding heat spreader via that passes through the thermally conductive core.

摘要翻译： 电子设备包括集成电路和散热器。 集成电路包括其中具有有源通孔的衬底。 散热器包括导热芯。 有源通孔经由导热芯通过相应的散热器连接。

公开(公告)号：US20120153492A1

公开(公告)日：2012-06-21

申请号：US12969836

申请日：2010-12-16

申请人： Mark A. Bachman ,  Sailesh M. Merchant ,  John Osenbach

发明人： Mark A. Bachman ,  Sailesh M. Merchant ,  John Osenbach

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L21/76898 ,  H01L25/0657 ,  H01L2224/08145 ,  H01L2224/80894 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2225/06513 ,  H01L2225/06541

摘要： A method of manufacturing a through-substrate-via structure. The method comprises providing a substrate having a front-side and an opposite back-side. A through-substrate via opening is formed in the front-side of the substrate. The through-substrate-via opening does not penetrate an outer surface of the back-side of the substrate. The through-substrate-via opening is filled with a solid fill material. Portions of the substrate from the outer surface of the back-side of the substrate are removed to thereby expose the fill material. At least portions of the exposed fill material are removed to form a back-side through-substrate via opening that traverses an entire thickness of the substrate. The back-side through-substrate via opening is filled with an electrically conductive material.

摘要翻译： 一种制造贯通基板通孔结构的方法。 该方法包括提供具有前侧和相对背面的基板。 在基板的前侧形成贯通基板通路孔。 贯通基板通孔开口不穿透基板背面的外表面。 贯通基板通孔开口填充有固体填充材料。 从衬底的背面的外表面去除衬底的部分，从而露出填充材料。 暴露的填充材料的至少部分被去除以形成穿过衬底的整个厚度的背面贯穿衬底通孔开口。 背面贯通基板通孔开口填充有导电材料。

公开(公告)号：US20120153430A1

公开(公告)日：2012-06-21

申请号：US12969852

申请日：2010-12-16

申请人： Mark A. Bachman ,  Sailesh M. Merchant ,  John Osenbach

发明人： Mark A. Bachman ,  Sailesh M. Merchant ,  John Osenbach

IPC分类号： H01L23/52 ,  H01L21/76 ,  H01L21/44

CPC分类号： H01L21/76224 ,  H01L21/76837 ,  H01L21/76898 ,  H01L23/481 ,  H01L2221/1005 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing an IC, comprising providing a substrate having a first side and a second opposite side, forming a STI opening in the first side of the substrate and forming a partial TSV opening in the first side of the substrate and extending the partial TSV opening. The extended partial TSV opening is deeper into the substrate than the STI opening. The method also comprises filling the STI opening with a first solid material and filling the extended partial TSV opening with a second solid material. Neither the STI opening, the partial TSV opening, nor the extended partial TSV opening penetrate an outer surface of the second side of the substrate. At least either: the STI opening and the partial TSV opening are formed simultaneously, or, the STI opening and the extended partial TSV opening are filled simultaneously.

摘要翻译： 一种制造IC的方法，包括提供具有第一侧和第二相对侧的衬底，在衬底的第一侧中形成STI开口，并在衬底的第一侧形成部分TSV开口，并延伸部分TSV 开放 扩展的部分TSV开口比STI开口更深入衬底。 该方法还包括用第一固体材料填充STI开口并用第二固体材料填充延伸的部分TSV开口。 STI打开，部分TSV打开，也不延伸部分TSV开口都不穿透基板的第二侧的外表面。 至少同时形成STI开口和部分TSV开口，或者同时填充STI开口和延伸部分TSV开口。