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1.发明授权Polysilane—polysilazane copolymers and methods for their preparation and use 失效聚硅烷 - 聚硅氮烷共聚物及其制备和使用方法公开(公告)号：US08658284B2
公开(公告)日：2014-02-25
申请号：US13504579
申请日：2010-10-25
申请人： Wei Chen , Eric Scott Moyer , Binh Thanh Nguyen , Sheng Wang , Mark A. Wanous , Xiaobing Zhou
发明人： Wei Chen , Eric Scott Moyer , Binh Thanh Nguyen , Sheng Wang , Mark A. Wanous , Xiaobing Zhou
CPC分类号： C08G77/62 , C09D183/16 , Y10T428/31663
摘要： A polysilane-polysilazane copolymer contains a polysilane unit of formula (I), and a polysilazane unit of formula (II), where each R1 and each R2 are each independently selected from H, Si, and N atoms, R3 is selected from H, Si, or C atoms, a≧1, b≧1, and a quantity (a+b)≧2. The polysilane-polysilazane copolymer may be formulated in a composition with a solvent. The polysilane-polysilazane copolymer may be used in PMD and STI applications for trench filling, where the trenches have widths of 100 nm or less and aspect ratios of at least (6). The polysilane-polysilazane copolymer can be prepared by amination of a perchloro polysilane having (2) or more silicon atoms per molecule with a primary amine.
摘要翻译： 聚硅烷 - 聚硅氮烷共聚物含有式（I）的聚硅烷单元和式（II）的聚硅氮烷单元，其中每个R 1和R 2各自独立地选自H，Si和N原子，R 3选自H， Si或C原子，a> = 1，b> = 1，数量（a + b）> = 2。 聚硅烷 - 聚硅氮烷共聚物可以配制成具有溶剂的组合物。 聚硅烷 - 聚硅氮烷共聚物可用于PMD和STI应用于沟槽填充，其中沟槽具有100nm或更小的宽度和至少（6）的纵横比。 聚硅烷 - 聚硅氮烷共聚物可以通过每分子具有（2）个或更多个硅原子的氨氯化聚酰胺与伯胺胺化制备。
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2.发明申请Polysilane - Polysilazane Copolymers And Methods For Their Preparation And Use 失效聚硅烷 - 聚硅氮烷共聚物及其制备和使用方法公开(公告)号：US20120214006A1
公开(公告)日：2012-08-23
申请号：US13504579
申请日：2010-10-25
申请人： Wei Chen , Eric Scott Moyer , Binh Thanh Nguyen , Sheng Wang , Mark A. Wanous , Xiaobing Zhou
发明人： Wei Chen , Eric Scott Moyer , Binh Thanh Nguyen , Sheng Wang , Mark A. Wanous , Xiaobing Zhou
IPC分类号： C08G77/62 , B05D5/12 , B32B9/00 , C09D183/16
CPC分类号： C08G77/62 , C09D183/16 , Y10T428/31663
摘要： A polysilane−polysilazane copolymer contains a polysilane unit of formula (I), and a polysilazane unit of formula (II), where each R1 and each R2 are each independently selected from H, Si, and N atoms, R3 is selected from H, Si, or C atoms, a≧1, b≧1, and a quantity (a+b)≧2. The polysilane−polysilazane copolymer may be formulated in a composition with a solvent. The polysilane-polysilazane copolymer may be used in PMD and STI applications for trench filling, where the trenches have widths of 100 nm or less and aspect ratios of at least (6). The polysilane−polysilazane copolymer can be prepared by amination of a perchloro polysilane having (2) or more silicon atoms per molecule with a primary amine.
摘要翻译： 聚硅烷 - 聚硅氮烷共聚物含有式（I）的聚硅烷单元和式（II）的聚硅氮烷单元，其中每个R 1和R 2各自独立地选自H，Si和N原子，R 3选自H， Si或C原子，a≥1，b≥1，数量（a + b）≥2。 聚硅烷 - 聚硅氮烷共聚物可以配制成具有溶剂的组合物。 聚硅烷 - 聚硅氮烷共聚物可用于PMD和STI应用于沟槽填充，其中沟槽具有100nm或更小的宽度和至少（6）的纵横比。 聚硅烷 - 聚硅氮烷共聚物可以通过每分子具有（2）个或更多个硅原子的氨氯化聚酰胺与伯胺胺化制备。
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3.发明申请Method of curing hydrogen silsesquioxane and densification in nano-scale trenches 审中-公开固化氢倍半硅氧烷和纳米级沟槽致密化的方法公开(公告)号：US20090032901A1
公开(公告)日：2009-02-05
申请号：US11919109
申请日：2006-06-12
申请人： Wei Chen , Byung Keun Hwang , Jae-Kyun Lee , Eric Scott Moyer , Michael John Spaulding , Sheng Wang
发明人： Wei Chen , Byung Keun Hwang , Jae-Kyun Lee , Eric Scott Moyer , Michael John Spaulding , Sheng Wang
IPC分类号： H01L21/762 , H01L23/58
CPC分类号： H01L21/3124 , H01L21/02134 , H01L21/02282 , H01L21/02337 , H01L21/316
摘要： Trenches in a semiconductor substrate are filled by (i) dispensing a film forming material on the semiconductor substrate and into the trenches; (ii) curing the dispensed film forming material in the presence of an oxidant at a first low temperature for a first predetermined period of time; (iii) curing the dispensed film forming material in the presence of an oxidant at a second low temperature for a second predetermined period of time; (iv) curing the dispensed film forming material in the presence of an oxidant at a third high temperature for a third predetermined period of time; and (v) forming filled oxide trenches in the semiconductor substrate. The film forming material is hydrogen silsesquioxane.
摘要翻译： 通过（i）在半导体衬底上分配成膜材料并进入沟槽来填充半导体衬底中的沟槽; （ii）在第一低温下在氧化剂存在下固化所分配的成膜材料持续第一预定时间段; （iii）在第二低温下在氧化剂存在下固化所分配的成膜材料持续第二预定时间段; （iv）在第三高温下在氧化剂存在下固化分配的成膜材料持续第三预定时间; 和（v）在半导体衬底中形成填充的氧化物沟槽。 成膜材料是氢倍半硅氧烷。
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公开(公告)号：US20120252920A1
公开(公告)日：2012-10-04
申请号：US13513588
申请日：2010-12-02
申请人： Andrew MacMillan , Eric Scott Moyer , Michael Robert Reiter , Kasumi Takeuchi , Sheng Wang , Craig Rollin Yeakle
发明人： Andrew MacMillan , Eric Scott Moyer , Michael Robert Reiter , Kasumi Takeuchi , Sheng Wang , Craig Rollin Yeakle
IPC分类号： C09D183/00 , C09K3/00
摘要： Disclosed is silsesquioxane resin composition that contains a free radical curable functional group that is stabilized with a hydrophilic inhibitor. The hydrophilic inhibitor that has the capability to scavenge free radicals such as ascorbic acid or salicylic acid is used to stabilize the resin. The resins are useful in semiconductor formation such as for anti-reflective coatings, hardmasks or photoresist layers.
摘要翻译： 公开了含有由亲水性抑制剂稳定的自由基固化性官能团的倍半硅氧烷树脂组合物。 使用具有清除游离基如抗坏血酸或水杨酸的能力的亲水性抑制剂来稳定树脂。 树脂可用于半导体形成，例如用于抗反射涂层，硬掩模或光致抗蚀剂层。
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公开(公告)号：US20120123135A1
公开(公告)日：2012-05-17
申请号：US13386514
申请日：2010-06-22
CPC分类号： C08G77/18 , C08L83/04 , C09D183/04 , H01L21/02137 , H01L21/02282 , H01L21/0337
摘要： A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, an aqueous base stripper or a reactive ion etch recipe containing CF4 is used to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).
摘要翻译： 将倍半硅氧烷树脂施加在图案化光刻胶的顶部并固化，以在图案表面的顶部上产生固化的倍半硅氧烷树脂。 随后，使用包含CF 4的水性碱性剥离剂或反应性离子蚀刻配方将硅树脂“回蚀”到光致抗蚀剂材料的顶部，暴露光致抗蚀剂的整个顶表面。 然后，含有O 2的第二反应离子蚀刻配方蚀刻掉光致抗蚀剂。 结果是具有图案化为光致抗蚀剂的柱的尺寸和形状的通孔的硅树脂膜。 可选地，新图案可以被转移到下层中。
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公开(公告)号：US08785113B2
公开(公告)日：2014-07-22
申请号：US13386502
申请日：2010-06-22
IPC分类号： G03F7/26
CPC分类号： H01L21/0337 , C08G77/04 , G03F7/405 , H01L21/02126 , H01L21/02216 , H01L21/3122
摘要： A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, a reactive ion etch recipe containing CF4 to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the organic based photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the organic photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).
摘要翻译： 将倍半硅氧烷树脂施加在图案化光刻胶的顶部并固化，以在图案表面的顶部上产生固化的倍半硅氧烷树脂。 随后，含有CF4以将“硅树脂”回蚀刻到光致抗蚀剂材料的顶部的反应离子蚀刻配方，暴露有机基光致抗蚀剂的整个顶表面。 然后，第二反应离子蚀刻配方含有O 2以蚀刻掉有机光致抗蚀剂。 结果是具有图案化为光致抗蚀剂的柱的尺寸和形状的通孔的硅树脂膜。 可选地，新图案可以被转移到下层中。
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公开(公告)号：US20110003249A1
公开(公告)日：2011-01-06
申请号：US12919039
申请日：2009-02-03
IPC分类号： C08G77/28 , C09D1/00 , C09D183/00 , G03F7/004 , C08K5/06 , C08K5/1535 , C08K5/07 , B05D5/12 , G03F7/20
CPC分类号： C08G77/28 , C08G77/04 , C08G77/12 , C08G77/70 , C09D183/04 , C09D183/08 , G02B1/04 , G03F7/0752 , G03F7/091 , C08L83/08 , C08L83/04
摘要： A silsesquioxane resin comprised of the units (Ph(CH2)rSiO(3-x)/2(OR′)x)m, (HSiO(3-x)/2(OR′)x)n′(MeSiO(3-x)/2(OR′)x)o′(RSiO(3-x)/2(OR′)x)p, (R1SiO(3-x)/2(OR′)x)q where Ph is a phenyl group, Me is a methyl group; R′ is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms; R is selected from an aryl sulfonate ester group; and R1 is selected from substituted phenyl groups, ester groups, polyether groups; mercapto groups, and reactive or curable organic functional groups; and r has a value of 0, 1, 2, 3, or 4; x has a value of 0, 1 or 2; wherein in the resin m has a value of 0 to 0,95; n has a value of 0.05 to 0.95; o has a value of 0.05 to 0.95; p has a value of 0.05 to 0.5; q has a value of 0 to 0.5; and m+n+o+p+q=1.
摘要翻译： 由单元（Ph（CH 2）r SiO（3-x）/ 2（OR'）x）m，（HSiO（3-x）/ 2（OR'）x）n'（MeSiO x）/ 2（OR'）x）o'（RSiO（3-x）/ 2（OR'）x）p，（R1SiO（3-x）/ 2（OR'）x）q其中Ph是苯基 组，我是甲基; R'是氢原子或具有1至4个碳原子的烃基; R选自芳基磺酸酯基; 并且R 1选自取代的苯基，酯基，聚醚基团; 巯基和反应性或可固化的有机官能团; 并且r的值为0,1,2,3或4; x的值为0,1或2; 其中在树脂m中具有0至0.95的值; n的值为0.05〜0.95; o的值为0.05〜0.95; p的值为0.05〜0.5; q的值为0〜0.5; 并且m + n + o + p + q = 1。
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公开(公告)号：US08828252B2
公开(公告)日：2014-09-09
申请号：US13386514
申请日：2010-06-22
IPC分类号： B44C1/22 , H01L21/02 , C08G77/18 , C08L83/04 , H01L21/033 , C09D183/04
CPC分类号： C08G77/18 , C08L83/04 , C09D183/04 , H01L21/02137 , H01L21/02282 , H01L21/0337
摘要： A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, an aqueous base stripper or a reactive ion etch recipe containing CF4 is used to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).
摘要翻译： 将倍半硅氧烷树脂施加在图案化光刻胶的顶部并固化，以在图案表面的顶部上产生固化的倍半硅氧烷树脂。 随后，使用包含CF 4的水性碱性剥离剂或反应性离子蚀刻配方将硅树脂“回蚀”到光致抗蚀剂材料的顶部，暴露光致抗蚀剂的整个顶表面。 然后，含有O 2的第二反应离子蚀刻配方蚀刻掉光致抗蚀剂。 结果是具有图案化为光致抗蚀剂的柱的尺寸和形状的通孔的硅树脂膜。 可选地，新图案可以被转移到下层中。
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公开(公告)号：US20090004606A1
公开(公告)日：2009-01-01
申请号：US11579347
申请日：2005-06-03
申请人： John Dean Albaugh , Gregory Scott Becker , Sina Magshoodi , Eric Scott Moyer , Sheng Wang , Craig Rollin Yeakle
发明人： John Dean Albaugh , Gregory Scott Becker , Sina Magshoodi , Eric Scott Moyer , Sheng Wang , Craig Rollin Yeakle
CPC分类号： C08G77/20 , C08K5/0025 , C09D183/04 , C08L83/06
摘要： This invention relates to acrylic functional resin compositions. More particularly, this invention relates to Poly [organ-co-(meth)acryloxyorgano]silsequioxane resins that are curable upon exposure to ultraviolet radiation with photo initiator or upon heating with or without a free radical generator. The resin compositions have high storage stability at room temperature and produces films that are useful as planarization layer, interlayer dielectric, passivation layer, gas permeable layer, negative photoresist, antireflective coating, conformal coating and IC packaging.
摘要翻译： 本发明涉及丙烯酸类功能性树脂组合物。 更具体地说，本发明涉及在用光引发剂暴露于紫外线辐射下或在有或无自由基发生剂加热时可固化的聚[有机 - 共 - （甲基）丙烯酰氧基有机基]硅氧烷树脂。 树脂组合物在室温下具有高的储存稳定性，并产生可用作平坦化层，层间电介质，钝化层，透气层，负性光致抗蚀剂，抗反射涂层，保形涂层和IC封装的膜。
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公开(公告)号：US20120122037A1
公开(公告)日：2012-05-17
申请号：US13386502
申请日：2010-06-22
IPC分类号： G03F7/20
CPC分类号： H01L21/0337 , C08G77/04 , G03F7/405 , H01L21/02126 , H01L21/02216 , H01L21/3122
摘要： A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, a reactive ion etch recipe containing CF4 to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the organic based photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the organic photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).
摘要翻译： 将倍半硅氧烷树脂施加在图案化光刻胶的顶部并固化，以在图案表面的顶部上产生固化的倍半硅氧烷树脂。 随后，含有CF4以将“硅树脂”回蚀刻到光致抗蚀剂材料的顶部的反应离子蚀刻配方，暴露有机基光致抗蚀剂的整个顶表面。 然后，第二反应离子蚀刻配方含有O 2以蚀刻掉有机光致抗蚀剂。 结果是具有图案化为光致抗蚀剂的柱的尺寸和形状的通孔的硅树脂膜。 可选地，新图案可以被转移到下层中。
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