Flexible carrier for high volume electronic package fabrication
    6.
    发明授权
    Flexible carrier for high volume electronic package fabrication 有权
    用于大容量电子封装制造的灵活载体

    公开(公告)号:US07969026B2

    公开(公告)日:2011-06-28

    申请号:US12212028

    申请日:2008-09-17

    IPC分类号: H01L23/28

    摘要: An assembly for producing partially packaged semiconductor devices is provided. In one embodiment, the assembly includes a magnetic plate; a flexible substrate disposed adjacent the magnetic plate and having two surfaces; a nonstick coating disposed on one surface of the flexible substrate thereby exposing a nonstick surface; and a tape layer having two surfaces. The tape layer is adhesively attached to the nonstick surface to expose a surface of the tape layer. A frame is disposed on the exposed surface of the tape layer, and a plurality of integrated circuit (IC) die is positioned within the frame and supported by the tape layer. A panel is formed within the frame that at least partially surrounds the plurality of IC die and that contacts the tape layer.

    摘要翻译: 提供了一种用于制造部分封装的半导体器件的组件。 在一个实施例中,组件包括磁性板; 设置在所述磁性板附近并具有两个表面的柔性基板; 设置在柔性基板的一个表面上的不粘涂层,从而暴露不粘表面; 和具有两个表面的带层。 带层粘附到不粘表面以暴露带层的表面。 框架设置在带层的暴露表面上,并且多个集成电路(IC)管芯定位在框架内并由带层支撑。 在框架内形成面板,其至少部分地围绕多个IC管芯并且接触带层。

    Method of chemically etching TiW and/or TiWN
    8.
    发明授权
    Method of chemically etching TiW and/or TiWN 失效
    化学蚀刻TiW和/或TiWN的方法

    公开(公告)号:US4787958A

    公开(公告)日:1988-11-29

    申请号:US90823

    申请日:1987-08-28

    申请人: William H. Lytle

    发明人: William H. Lytle

    摘要: A method of chemically etching TiW and/or TiWN is described wherein the etching of a semiconductor substrate having a layers of TiWN, TiW and Au disposed between the substrate and a Au bump is performed with a 30% solution of hydrogen peroxide (H.sub.2 O.sub.2) at a temperature of approximately 90.degree. C.

    摘要翻译: 描述了一种化学蚀刻TiW和/或TiWN的方法,其中用30%的过氧化氢(H 2 O 2)溶液进行对位于衬底和Au凸块之间具有TiWN,TiW和Au层的半导体衬底的蚀刻 温度约90℃