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    Apparatus for optical disc spin-coating
    2.
    发明申请
    Apparatus for optical disc spin-coating 审中-公开
    光盘旋涂装置

    公开(公告)号：US20050281179A1

    公开(公告)日：2005-12-22

    申请号：US11154662

    申请日：2005-06-17

    申请人： Tae-Sik Kang ,  Mi Han ,  Seongkeun Lee ,  Sung Jang ,  Hun Seo ,  Kwang Lee ,  Youngjun Hong

    发明人： Tae-Sik Kang ,  Mi Han ,  Seongkeun Lee ,  Sung Jang ,  Hun Seo ,  Kwang Lee ,  Youngjun Hong

    IPC分类号： B29D17/00 ,  G11B7/00 ,  G11B7/26

    CPC分类号： G11B7/266 ,  B29D17/005

    摘要： The present invention provides an apparatus for optical disc spin-coating that prevents leakage of a photocurable resin due to a capillary phenomenon by controlling a contact area between a cap and a disc so that contamination of the disc and manufacturing errors do not occur. Furthermore, the apparatus of the present invention can manufacture an optical disc having a central portion which is not contaminated by a photocurable resin and in which bubbles are not generated. In addition, the apparatus may further include a vacuum hole formed in the turntable, which can be opened and closed independently from the opening and closing of a vacuum hole formed in the central axis of the turntable, to prevent the lifting of the optical disc when the cap is removed. As a result, operability and the manufacturing efficiency of the apparatus can be increased significantly.

    摘要翻译： 本发明提供一种用于光盘旋涂的装置，其通过控制盖和盘之间的接触面积来防止毛细管现象引起的光固化树脂的泄漏，从而不会发生盘的污染和制造误差。 此外，本发明的装置可以制造具有不被光固化树脂污染的中心部分并且不产生气泡的光盘。 此外，该设备还可以包括形成在转盘中的真空孔，其可以独立于形成在转台的中心轴线上的真空孔的打开和关闭而被打开和关闭，以防止在光盘的提升时 盖子被移除。 结果，可以显着提高装置的可操作性和制造效率。

    Method of fabricating nitride-based compound layer, GaN Substrate and vertical structure nitride-based semiconductor light emitting device
    4.
    发明申请
    Method of fabricating nitride-based compound layer, GaN Substrate and vertical structure nitride-based semiconductor light emitting device 有权
    氮化物类化合物层的制造方法，GaN衬底和垂直结构氮化物系半导体发光元件

    公开(公告)号：US20060286777A1

    公开(公告)日：2006-12-21

    申请号：US11471697

    申请日：2006-06-21

    申请人： Soo Lee ,  Cheol Kim ,  Jaeun Yoo ,  Sung Jang ,  Masayoshi Koike

    发明人： Soo Lee ,  Cheol Kim ,  Jaeun Yoo ,  Sung Jang ,  Masayoshi Koike

    IPC分类号： H01L21/20

    CPC分类号： H01L33/0075 ,  H01L21/02002 ,  H01L21/02389 ,  H01L21/02439 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/0079

    摘要： In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate.

    摘要翻译： 在制造氮化物类化合物层的方法中，首先制备GaN衬底。 在GaN衬底上形成具有预定图案的掩模层，以暴露GaN衬底的部分区域。 然后在部分曝光的GaN衬底上形成缓冲层。 缓冲层由具有10％以下与GaN的晶格失配的材料制成。 此后，氮化物类化合物从缓冲层的顶表面朝向掩模层的顶表面横向生长，并且氮化物基化合物层垂直生长至预定厚度。 此外，通过湿蚀刻除去掩模层和缓冲层，以将氮化物基化合物层与GaN衬底分离。