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    Nanowire varactor diode and methods of making same
    3.
    发明申请
    Nanowire varactor diode and methods of making same 有权
    纳米线变容二极管及其制作方法

    公开(公告)号：US20050212079A1

    公开(公告)日：2005-09-29

    申请号：US10806361

    申请日：2004-03-23

    申请人： David Stumbo ,  Jian Chen ,  David Heald ,  Yaoling Pan

    发明人： David Stumbo ,  Jian Chen ,  David Heald ,  Yaoling Pan

    IPC分类号： H01L29/06 ,  H01L29/93

    CPC分类号： B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/93 ,  Y10S977/762

    摘要： A nanowire varactor diode and methods of making the same are disclosed. The structure comprises a coaxial capacitor running the length of the semiconductor nanowire. In one embodiment, a semiconductor nanowire of a first conductivity type is deposited on a substrate. An insulator is formed on at least a portion of the nanowire's surface. A region of the nanowire is doped with a second conductivity type material. A first electrical contact is formed on at least part of the insulator and the doped region. A second electrical contact is formed on a non-doped potion of the nanowire. During operation, the conductivity type at the surface of the nanowire inverts and a depletion region is formed upon application of a voltage to the first and second electrical contacts. The varactor diode thereby exhibits variable capacitance as a function of the applied voltage.

    摘要翻译： 公开了一种纳米线变容二极管及其制造方法。 该结构包括运行半导体纳米线长度的同轴电容器。 在一个实施例中，第一导电类型的半导体纳米线沉积在衬底上。 在纳米线表面的至少一部分上形成绝缘体。 纳米线的区域掺杂有第二导电类型的材料。 在绝缘体和掺杂区域的至少一部分上形成第一电接触。 在纳米线的非掺杂药液上形成第二电接触。 在操作期间，纳米线表面的导电类型反转，并且在向第一和第二电触点施加电压时形成耗尽区。 因此，变容二极管作为施加电压的函数呈现可变电容。

    Fully integrated organic layered processes for making plastic electronics based on conductive polymers and semiconductor nanowires
    5.
    发明申请
    Fully integrated organic layered processes for making plastic electronics based on conductive polymers and semiconductor nanowires 失效
    用于制造基于导电聚合物和半导体纳米线的塑料电子器件的完全集成的有机分层工艺

    公开(公告)号：US20060214156A1

    公开(公告)日：2006-09-28

    申请号：US11233503

    申请日：2005-09-22

    申请人： Yaoling Pan ,  Francisco Leon ,  David Stumbo

    发明人： Yaoling Pan ,  Francisco Leon ,  David Stumbo

    IPC分类号： H01L29/08

    CPC分类号： H01L51/0545 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78681 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0035 ,  H01L51/0037 ,  H01L51/0048 ,  H01L51/0049 ,  H01L51/0541 ,  H01L51/0566 ,  H01L51/4253 ,  H01L51/4266 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/764

    摘要： The present invention is directed to thin film transistors using nanowires (or other nanostructures such as nanoribbons, nanotubes and the like) incorporated in and/or disposed proximal to conductive polymer layer(s), and production scalable methods to produce such transistors. In particular, a composite material comprising a conductive polymeric material such as polyaniline (PANI) or polypyrrole (PPY) and one or more nanowires incorporated therein is disclosed. Several nanowire-TFT fabrication methods are also provided which in one exemplary embodiment includes providing a device substrate; depositing a first conductive polymer material layer on the device substrate; defining one or more gate contact regions in the conductive polymer layer; depositing a plurality of nanowires over the conductive polymer layer at a sufficient density of nanowires to achieve an operational current level; depositing a second conductive polymer material layer on the plurality of nanowires; and forming source and drain contact regions in the second conductive polymer material layer to thereby provide electrical connectivity to the plurality of nanowires, whereby the nanowires form a channel having a length between respective ones of the source and drain regions.

    摘要翻译： 本发明涉及使用并入和/或设置在导电聚合物层附近的纳米线（或诸如纳米带，纳米管等的其它纳米结构）的薄膜晶体管，以及用于生产这种晶体管的生产可扩展方法。 特别地，公开了包含导电聚合材料如聚苯胺（PANI）或聚吡咯（PPY）和一个或多个纳米线的复合材料，其中并入其中。 还提供了几种纳米线TFT制造方法，其在一个示例性实施例中包括提供器件衬底; 在器件衬底上沉积第一导电聚合物材料层; 限定所述导电聚合物层中的一个或多个栅极接触区域; 在所述导电聚合物层上以足够的纳米线密度沉积多个纳米线以实现工作电流水平; 在所述多个纳米线上沉积第二导电聚合物材料层; 以及在所述第二导电聚合物材料层中形成源极和漏极接触区域，从而提供与所述多个纳米线的电连接性，由此所述纳米线形成在所述源极和漏极区域中的相应长度之间具有长度的沟道。

    Nanowire capacitor and methods of making same
    7.
    发明申请
    Nanowire capacitor and methods of making same 有权
    纳米线电容器及其制作方法

    公开(公告)号：US20070012985A1

    公开(公告)日：2007-01-18

    申请号：US11525121

    申请日：2006-09-22

    申请人： David Stumbo ,  Jian Chen ,  David Heald ,  Yaoling Pan

    发明人： David Stumbo ,  Jian Chen ,  David Heald ,  Yaoling Pan

    IPC分类号： H01L27/108

    CPC分类号： B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/93 ,  Y10S977/762

    摘要： A nanowire capacitor and methods of making the same are disclosed. The nanowire capacitor includes a substrate and a semiconductor nanowire that is supported by the substrate. An insulator is formed on a portion of the surface of the nanowire. Additionally, an outer coaxial conductor is formed on a portion of the insulator and a contact coupled to the nanowire.

    摘要翻译： 公开了一种纳米线电容器及其制造方法。 纳米线电容器包括由衬底支撑的衬底和半导体纳米线。 绝缘体形成在纳米线表面的一部分上。 此外，在绝缘体的一部分上形成一个外部同轴导体和一个与纳米线相连的触点。

    Contact doping and annealing systems and processes for nanowire thin films
    8.
    发明申请
    Contact doping and annealing systems and processes for nanowire thin films 失效
    接触纳米线薄膜的掺杂和退火系统和工艺

    公开(公告)号：US20060234519A1

    公开(公告)日：2006-10-19

    申请号：US11271488

    申请日：2005-11-10

    申请人： Yaoling Pan ,  David Stumbo

    发明人： Yaoling Pan ,  David Stumbo

    IPC分类号： H01L21/00

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/66439 ,  H01L29/66469 ,  H01L29/66742 ,  H01L29/66772 ,  H01L29/7606 ,  H01L29/78696 ,  Y10S977/901 ,  Y10S977/963

    摘要： Embodiments of the present invention are provided for improved contact doping and annealing systems and processes. In embodiments, a plasma ion immersion implantation (PIII) process is used for contact doping of nanowires and other nanoelement based thin film devices. According to further embodiments of the present invention, pulsed laser annealing using laser energy at relatively low laser fluences below about 100 mJ/cm2 (e.g., less than about 50 mJ/cm2, e.g., between about 2 and 18 mJ/cm2) is used to anneal nanowire and other nanoelement-based devices on substrates, such as low temperature flexible substrates, e.g., plastic substrates.

    摘要翻译： 提供本发明的实施例用于改进的接触掺杂和退火系统和工艺。 在实施例中，等离子体离子浸没注入（PIII）工艺用于纳米线和其它基于纳米元件的薄膜器件的接触掺杂。 根据本发明的另外的实施例，使用在低于约100mJ / cm 2（例如小于约50mJ / cm 2）的较低激光能量密度的激光能量进行脉冲激光退火， SUP>，例如约2和18mJ / cm 2之间）用于退火衬底上的纳米线和其它基于纳米元件的器件，例如低温柔性衬底，例如塑料衬底。