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    Semiconductor device
    2.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US5701033A

    公开(公告)日：1997-12-23

    申请号：US593965

    申请日：1996-01-30

    申请人： Tetsuya Ueda ,  Jun Shibata ,  Yomiyuki Yama

    发明人： Tetsuya Ueda ,  Jun Shibata ,  Yomiyuki Yama

    IPC分类号： H01L23/04 ,  H01L23/02 ,  H01L23/057 ,  H01L23/13 ,  H01L23/64 ,  H01L23/12 ,  H01L23/28 ,  H01L23/34

    CPC分类号： H01L23/057 ,  H01L23/13 ,  H01L23/642 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49109 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/01079 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/16195 ,  H01L2924/19041 ,  Y10S257/924

    摘要： A semiconductor device comprising a substrate having a hollow cavity for mounting a semiconductor element therein and a lowered step surface at a periphery of the cavity for mounting a chip component thereon. A semiconductor element is mounted within the cavity and a chip capacitor is mounted to the lowered step surface. The semiconductor element and the chip component are adapted to be connected to an external circuit through electrical conductors. A cap is attached to the substrate and a seal material is filled into a space defined between the cap and the substrate for sealing the cavity and for encapsulating the chip component on the lowered step surface which may extend along the entire periphery of the cavity. The cap may include a projection adapted to abut gainst a side wall of the lowered step surface, or alternatively, the lowered step surface may include a side wall having a projection adapted to abut against periphery of the cap. The semiconductor device may further comprise a heat sink attached to the semiconductor element.

    摘要翻译： 一种半导体器件，包括具有用于将半导体元件安装在其中的中空腔的衬底和用于在其上安装芯片部件的空腔周围的降低的台阶表面。 半导体元件安装在空腔内，并且片状电容器安装到降低的台阶表面。 半导体元件和芯片部件适于通过电导体连接到外部电路。 盖子连接到基板上，并且将密封材料填充到限定在盖和基板之间的空间中，用于密封空腔并将芯片部件封装在可沿着空腔的整个周边延伸的降低的台阶表面上。 帽可以包括适于抵靠降低的台阶表面的侧壁的突起，或者替代地，降低的台阶表面可以包括具有适于抵靠盖的周边的突起的侧壁。 半导体器件还可以包括附接到半导体元件的散热器。

    Method of fabricating semiconductor device having sidewall spacers and oblique implantation
    3.
    发明授权
    Method of fabricating semiconductor device having sidewall spacers and oblique implantation 失效
    制造具有顶板间隔的半导体器件和OBIIQUE植入的方法

    公开(公告)号：US5217910A

    公开(公告)日：1993-06-08

    申请号：US779498

    申请日：1991-10-24

    申请人： Masahiro Shimizu ,  Katsuyoshi Mitsui ,  Yomiyuki Yama ,  Masatoshi Yasunaga

    发明人： Masahiro Shimizu ,  Katsuyoshi Mitsui ,  Yomiyuki Yama ,  Masatoshi Yasunaga

    IPC分类号： H01L21/265 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/78

    CPC分类号： H01L29/6659 ,  H01L21/26586 ,  H01L21/823807 ,  H01L29/78

    摘要： First, a low-concentration impurity layer is formed by obliquely implanting an n-type impurity at a prescribed angle with respect to the surface of a p-type semiconductor substrate, using a gate electrode formed on the semiconductor substrate as a mask. Thereafter a sidewall spacer is formed on the sidewall of the gate electrode, and then a medium-concentration impurity layer is formed by obliquely implanting an n-type impurity to the surface of the semiconductor substrate. Thereafter a high-concentration impurity layer is formed by substantially perpendicularly implanting an n-type impurity with respect to the surface of the semiconductor substrate. According to this method, the low-concentration impurity layer in source and drain regions having triple diffusion structures can be accurately overlapped with the gate electrode, with no requirement for heat treatment for thermal diffusion.

    摘要翻译： 首先，使用形成在半导体衬底上的栅电极作为掩模，通过以相对于p型半导体衬底的表面以规定角度倾斜注入n型杂质来形成低浓度杂质层。 此后，在栅电极的侧壁上形成侧壁间隔物，然后通过向半导体衬底的表面倾斜注入n型杂质形成中等浓度杂质层。 此后，通过相对于半导体衬底的表面基本垂直地注入n型杂质来形成高浓度杂质层。 根据该方法，具有三重扩散结构的源极和漏极区域中的低浓度杂质层可以与栅电极精确重叠，而不需要热扩散热处理。

    Packaged semiconductor device with high energy radiation absorbent glass
    4.
    发明授权
    Packaged semiconductor device with high energy radiation absorbent glass 失效
    具有高能量辐射吸收玻璃的封装半导体器件

    公开(公告)号：US5150180A

    公开(公告)日：1992-09-22

    申请号：US690279

    申请日：1991-04-24

    申请人： Yomiyuki Yama

    发明人： Yomiyuki Yama

    IPC分类号： H01L23/02 ,  H01L31/0203

    CPC分类号： H01L31/0203 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/3025 ,  H01L33/44

    摘要： A packaged semiconductor device includes a semiconductor element for receiving light, a semiconductor package containing the semiconductor element and including leads, optical glass sealing the semiconductor package and protecting the semiconductor element, the optical glass transmitting light and including an element that absorbs high energy radiation. Therefore, radiation such as gamma rays is absorbed by the anti-radiation glass and deterioration of the internal semiconductor element is prevented. A metal frame including a heavy metal radiation shield is provided at the periphery of the antiradiation glass. Thus, scattering of light in the semiconductor package is prevented and the positional deviation of the anti-radiation glass in the semiconductor package is prevented.

    摘要翻译： 封装半导体器件包括用于接收光的半导体元件，包含半导体元件并包括引线的半导体封装，密封半导体封装并保护半导体元件的光学玻璃，光学玻璃透光并且包括吸收高能辐射的元件。 因此，诸如γ射线的辐射被防辐射玻璃吸收，并且防止了内部半导体元件的劣化。 在抗辐射玻璃的周围设有包括重金属辐射屏蔽的金属框架。 因此，防止了半导体封装中的光散射，并且防止了半导体封装中的防辐射玻璃的位置偏移。