摘要:
A semiconductor device comprising a substrate having a hollow cavity for mounting a semiconductor element therein and a lowered step surface at a periphery of the cavity for mounting a chip component thereon. A semiconductor element is mounted within the cavity and a chip capacitor is mounted to the lowered step surface. The semiconductor element and the chip component are adapted to be connected to an external circuit through electrical conductors. A cap is attached to the substrate and a seal material is filled into a space defined between the cap and the substrate for sealing the cavity and for encapsulating the chip component on the lowered step surface which may extend along the entire periphery of the cavity. The cap may include a projection adapted to abut gainst a side wall of the lowered step surface, or alternatively, the lowered step surface may include a side wall having a projection adapted to abut against periphery of the cap. The semiconductor device may further comprise a heat sink attached to the semiconductor element.
摘要:
A semiconductor device having improved heat dissipation property and electrical characteristics and applicable to an integrated circuit having a multiplicity of electrodes, and a method of fabricating the semiconductor device are disclosed. A surface of a semiconductor chip (1) on which a bump (2) is formed is in face to face relation to a surface of a circuit substrate (3) on which a land (5) is formed. A polyimide tape (6) and a TAB lead (7) constitute a TAB tape. The bump (2) and the land (5) are electrically connected to each other through the flat TAB tape. The land (5) is electrically connected to an external connection electrode (4) through an interconnecting line within the circuit substrate (3). The TAB lead (7) extending from the bump (2) to the land (5) is reduced in length, and the signal through the TAB lead (7) accordingly has improved electrical characteristics. The use of the TAB tape permits the semiconductor device to be applied to the semiconductor chip (1) having the multiplicity of bumps (2).
摘要:
A semiconductor device includes an encapsulating resin encapsulating a semiconductor substrate, a lead pattern or a laminated wiring layers transferred or secured on the lower surface of the encapsulating resin and a plurality of external electrode disposed on the lower surface of the lead pattern. The device may be manufactured by bonding a semiconductor substrate to a transferring substrate on which a lead pattern is formed, resin encapsulating an upper portion of the transferring substrate to cover the semiconductor substrate, and removing only the transferring substrate with the lead pattern left bonded to the encapsulating resin and the semiconductor substrate.
摘要:
A semiconductor device according to the present invention has reduced inductance on a power supply line, a grounding line, and signal lines. In this invention, to reduce the length of the power supply connection and that of the grounding connection, a power supply metal post and a grounding metal post are respectively provided on a power supply lead of a semiconductor chip and grounding lead of the semiconductor chip perpendicular to the leads. The metal posts protrude from the resin encapsulating the chip and are connected to lands or a conductive circuit pattern on a printed circuit board. Furthermore, a planar conductor commonly connecting the power supply or grounding potentials is provided.
摘要:
A semiconductor device includes an encapsulating resin encapsulating a semiconductor substrate, a lead pattern or a laminated wiring layers transferred or secured on the lower surface of the encapsulating resin and a plurality of external electrode disposed on the lower surface of the lead pattern. The device may be manufactured by bonding a semiconductor substrate on a transferring substrate to which a lead pattern is formed, resin encapsulating an upper portion of the transferring substrate to cover the semiconductor substrate, and removing only the transferring substrate with the lead pattern left bonded to the encapsulating resin and the semiconductor substrate.
摘要:
The present invention relates to a compound represented by Formula [I]: wherein X is O, S, NH or CH2; Y1, Y2, Y3, Y4 and Y5, which may be identical or different, are each CH or N; however, at least one of Y1, Y2, Y3, Y4 and Y5 is N; Z1 and Z2, which may be identical or different, are each CH or N; n is an integer from 1 to 3; R1 is a C3-C8 cycloalkyl group, a C6-C10 aryl group, an aliphatic heterocyclic ring or an aromatic heterocyclic ring, or a bicyclic aliphatic saturated hydrocarbon group; R2 and R3, which may be identical or different, are each a hydrogen atom, a lower alkyl group, a lower alkenyl group, a C3-C8 cycloalkyl group, a C6-C10 aryl group, an aromatic heterocyclic ring, or the like; and R4 is a hydrogen atom, a lower alkyl group, a C3-C6 cycloalkyl group or the like, or a pharmaceutically acceptable salt or ester thereof, and a selective inhibitor against Cdk4 and/or Cdk6 or an anticancer agent containing the compound or a pharmaceutically acceptable salt or ester thereof.
摘要:
While a spectrum waveform of an output signal from a subtracter (207) is visibly monitored, an operator controls a variable phases shifter (208) based upon a second control signal (CL2) so that a shape of a spectrum waveform of an output signal from a subtracter (207) is approximated to a spectrum waveform of a desirable wave to change a phase of a local oscillation frequency signal from a local oscillator (206). As a result, a phase of a duplicated loop signal is changed. Also, the operator controls a variable attenuator (209) based upon a first control signal (CL1) so that a shape of this spectrum waveform is approximated to a spectrum waveform of a desirable wave (20) to change a signal level of the duplicated loop signal.
摘要:
A resin-sealed chip stack type semiconductor device comprises a substrate placed on many balls, a bottom chip to which wires are connected, a top chip to which wires are connected and mounted above the bottom chip, a non-conductive bonding layer which functions to bond and fix the two chips to each other, and a sealing resin which covers and protects all the components mounted on the substrate. The non-conductive bonding layer is provided by die bonding in such a manner that is at least covers the portion of the bottom chip where the corresponding wires are connected and does not allow generation of a gap between the two chips.
摘要:
A pad electrode is formed on a main surface of a semiconductor chip. A passivation film, which covers a surface portion of the pad electrode, is formed on the main surface of the semiconductor chip. An internal connection conductor is formed on a surface portion of the pad electrode. The semiconductor chip is covered with a molding resin which exposes only a top surface of the internal connection conductor. An external connection conductor is formed on a top surface of the internal connection conductor. The external connection conductor has a substantially flat top surface. Thereby, a plastic molded semiconductor package can be easily mounted on a printed board, and can have improved reliability after being joined on the printed board.
摘要:
A pad electrode is formed on a main surface of a semiconductor chip. A passivation film, which covers a surface portion of the pad electrode, is formed on the main surface of the semiconductor chip. An internal connection conductor is formed on a surface portion of the pad electrode. The semiconductor chip is covered with a molding resin which exposes only a top surface of the internal connection conductor. An external connection conductor is formed on a top surface of the internal connection conductor. The external connection conductor has a substantially flat top surface. Thereby, a plastic molded semiconductor package can be easily mounted on a printed board, and can have improved reliability after being joined on the printed board.