公开(公告)号：US20050284163A1

公开(公告)日：2005-12-29

申请号：US11103566

申请日：2005-04-12

申请人： Yoon Hwang ,  Cheol Kim ,  Chang Choi ,  Seung Kang ,  Hyung Lim

发明人： Yoon Hwang ,  Cheol Kim ,  Chang Choi ,  Seung Kang ,  Hyung Lim

IPC分类号： F25B41/06 ,  F25B13/00 ,  F25B49/02 ,  F25B1/00 ,  F25B41/04

CPC分类号： F25B49/02 ,  F25B13/00 ,  F25B2313/0315 ,  F25B2400/075 ,  F25B2500/06 ,  F25B2600/21 ,  F25B2600/2513 ,  F25B2700/21151 ,  F25B2700/21152

摘要： Disclosed herein is a method of controlling a linear expansion valve of a cooling cycle apparatus. The method comprises a first step of calculating a target opening level value according to suction overheat level of compressors to control a linear expansion valve based on the calculated target opening level value, and a second step of calculating a new target opening level value according to the suction overheat level of the compressors and discharge temperature of the compressors to control the linear expansion valve based on the calculated new target opening level value. Consequently, the discharge temperature of the compressors is prevented from being excessively increased, and therefore, the compressors are prevented from being overheated and damaged, and reliability of the cooling cycle apparatus is improved.

摘要翻译： 这里公开了一种控制冷却循环装置的线性膨胀阀的方法。 该方法包括：第一步骤，根据计算出的目标开度水平值，根据压缩机的吸入过热水平计算目标开度值，以及第二步骤，根据计算出的目标开度水平值计算新的目标开度水平值 压缩机的抽吸过热水平和压缩机的排出温度，根据计算出的新的目标开度值控制线性膨胀阀。 因此，能够防止压缩机的排出温度过度增加，防止压缩机过热损坏，提高冷却循环装置的可靠性。

公开(公告)号：US20050262860A1

公开(公告)日：2005-12-01

申请号：US11138256

申请日：2005-05-27

申请人： Yoon Hwang ,  Cheol Kim ,  Chang Choi ,  Yeong Choe

发明人： Yoon Hwang ,  Cheol Kim ,  Chang Choi ,  Yeong Choe

IPC分类号： F24F11/00 ,  F25B49/02 ,  F25B7/00 ,  F25B1/00 ,  F25B1/10 ,  F25B49/00

CPC分类号： F25B49/022 ,  F25B2400/075 ,  F25B2600/02 ,  F25B2600/0251 ,  F25B2700/2104

摘要： A method for controlling multiple compressors for use in an airconditioner is disclosed. In the airconditioner having N compressors, the method sequentially and equally operates the N compressors using a two-dimensional matrix which prevents only a specific compressor from among the N compressors from being repeatedly operated, arranges rows and columns of the two-dimensional matrix to allow all compressors to be alternately operated according to the number of operating compressors from among all compressors, and stochastically operates and stops the N compressors using the two-dimensional matrix. As a result, the method controls the N compressors to be equally operated without overlapping operation times of the N compressors, and alleviates fatigue of the compressors, resulting in equally longer lifetimes of the N compressors.

摘要翻译： 公开了一种用于控制在空调器中使用的多个压缩机的方法。 在具有N个压缩机的空调机中，该方法使用二维矩阵顺序地和等同地操作N个压缩机，该二维矩阵仅防止N个压缩机中的特定压缩机被重复操作，排列二维矩阵的行和列以允许 所有压缩机根据所有压缩机中的操作压缩机的数量交替地操作，并且使用二维矩阵随机地操作和停止N个压缩机。 结果，该方法控制N个压缩机在N个压缩机的重复操作时间内相等地操作，并且减轻压缩机的疲劳，导致N个压缩机的同样更长的寿命。

公开(公告)号：US20050103048A1

公开(公告)日：2005-05-19

申请号：US10874258

申请日：2004-06-24

申请人： Cheol Kim ,  Eun Cho ,  Yoon Hwang ,  Yun Ryu ,  Chan Song ,  Won Lee ,  Chang Choi ,  Ji Jang ,  Young Choi ,  Woo Cha ,  Seung Hyun

发明人： Cheol Kim ,  Eun Cho ,  Yoon Hwang ,  Yun Ryu ,  Chan Song ,  Won Lee ,  Chang Choi ,  Ji Jang ,  Young Choi ,  Woo Cha ,  Seung Hyun

IPC分类号： F24F5/00 ,  F25B13/00 ,  F25B31/00 ,  F25B43/00 ,  F25B1/10 ,  F25B39/04

CPC分类号： F25B13/00 ,  F25B31/004 ,  F25B43/006 ,  F25B2313/001 ,  F25B2313/0253 ,  F25B2400/075

摘要： An air-conditioner having multiple compressors includes: an indoor heat-exchanger disposed indoors and heat-exchanging indoor air; an outdoor heat-exchanger disposed outdoors and heat-exchanging a refrigerant with external air; four compressors for compressing the refrigerant to change the refrigerant to have a high temperature and high pressure; and three accumulators disposed at a suction side of the four compressors and separating the refrigerant into a gas and a liquid to supply a gaseous refrigerant to the compressors. Oil can be uniformly supplied to each compressor, thereby enhancing reliability of compressors, and since the three accumulators are small with low capacities, their installation space can be easily secured.

摘要翻译： 具有多个压缩机的空调器包括：室内热交换器，其设置在室内和室内热交换器中; 设置在户外的室外热交换器，并与制冷剂与外部空气进行热交换; 四个用于压缩制冷剂以将制冷剂改变为具有高温高压的压缩机; 以及设置在四个压缩机的吸入侧的三个蓄电池，并将制冷剂分离成气体和液体，以将气态制冷剂供应到压缩机。 油可以均匀地供应到每个压缩机，从而提高压缩机的可靠性，并且由于三个蓄能器体积小，容量小，因此可以容易地确保其安装空间。

公开(公告)号：US20060123841A1

公开(公告)日：2006-06-15

申请号：US11298531

申请日：2005-12-12

申请人： Cheol Kim ,  Yoon Hwang

发明人： Cheol Kim ,  Yoon Hwang

IPC分类号： F25B41/00

CPC分类号： F25B40/06 ,  F25B6/04 ,  F25B40/00 ,  F25B41/04 ,  F25B2400/075 ,  F25B2600/2501

摘要： An air conditioner is disclosed which includes a pressurizer for pressurizing a suction-side refrigerant sucked into a compressor, and an auxiliary condenser for condensing a discharge-side refrigerant discharged out of the compressor. Accordingly, it is possible to raise the evaporation pressure of the suction-side refrigerant sucked into the compressor, and to reduce the condensation pressure of the discharge-side refrigerant discharged out of the compressor. As a result, the difference between the suction and discharge pressures of the compressor can be reduced, so that a reduction in compression load can be achieved. Thus, a reduction in power consumption can be achieved.

公开(公告)号：US20060123821A1

公开(公告)日：2006-06-15

申请号：US11155484

申请日：2005-06-20

申请人： Yun Ryu ,  Eun Cho ,  Yoon Hwang ,  Cheol Kim ,  Cheol Ko

发明人： Yun Ryu ,  Eun Cho ,  Yoon Hwang ,  Cheol Kim ,  Cheol Ko

IPC分类号： F25B27/00 ,  F25D23/12 ,  F25D15/00

CPC分类号： F25B13/00 ,  F25B27/02 ,  F25B2313/006 ,  F25B2313/0233 ,  F25B2500/02 ,  Y02A30/274 ,  Y02E20/14 ,  Y02P80/152

摘要： A cogeneration system is disclosed. The cogeneration system includes a heat pump type air conditioner, a waste heat recoverer to recover waste heat of a drive source, a waste heat supplying heat exchanger, which is heated by the waste heat recovered by the waste heat recoverer, and a bypassing unit, which causes the waste heat supplying heat exchanger to function as an evaporator during a heating operation of the heat pump type air conditioner. In accordance with this arrangement, it is possible to enhance the heating capacity of the heat pump type air conditioner irrespective of outdoor temperature, to prevent damage of compressors, and to minimize power consumption.

摘要翻译： 公开了热电联产系统。 热电联产系统包括热泵式空调机，用于回收驱动源的废热的废热回收器，由废热回收器回收的废热加热的废热供给热交换器和旁路单元， 在热泵式空调机的制热运转中，废热供给用热交换器起蒸发器的作用。 根据该结构，无论室外温度如何，都能够提高热泵式空调的供暖能力，防止压缩机的损坏，并且能够使功耗最小化。

公开(公告)号：US20050061024A1

公开(公告)日：2005-03-24

申请号：US10952904

申请日：2004-09-30

申请人： Seok-Keun Koh ,  Hyung Jung ,  Won Choi ,  Byung Kang ,  Ki Kim ,  Sam Ha ,  Cheol Kim ,  Sung-Chang Choi

发明人： Seok-Keun Koh ,  Hyung Jung ,  Won Choi ,  Byung Kang ,  Ki Kim ,  Sam Ha ,  Cheol Kim ,  Sung-Chang Choi

IPC分类号： C23C16/44 ,  B05D3/14 ,  B05D5/08 ,  B05D7/24 ,  C08F2/00 ,  C08G83/00 ,  C23C14/12 ,  C23C14/22 ,  C23C16/30 ,  C23C16/50 ,  C23C16/503 ,  C23C16/515 ,  C23C16/56 ,  F25B47/00 ,  F28F13/18 ,  F25B41/00

CPC分类号： C23C16/503 ,  B05D1/62 ,  B05D3/148 ,  B05D5/083 ,  C23C16/30 ,  C23C16/50 ,  C23C16/515 ,  C23C16/56 ,  F25B47/003 ,  F28F13/18 ,  F28F2245/02 ,  F28F2245/04

摘要： According to the present invention, there is provided a plasma polymerization surface modification of a metal for enhancing its applicability for use in refrigerating and air conditioning such as in constructing heat exchanges, by using a DC discharge plasma, comprising the steps of: (a) positioning an anode electrode which is substantially of metal to be surface-modified and a cathode electrode in a chamber, (b) maintaining a pressure in the chamber at a predetermined vacuum level, (c) blowing a reaction gas composed of an unsaturated aliphatic hydrocarbon monomer gas or fluorine-containing monomer and silicon containing monomer gas at a predetermined pressure and a non-polymerizable gas at a predetermined pressure into the chamber, and (d) applying a voltage to the electrodes in order to obtain a DC discharge, whereby to obtain a plasma consisting of positive and negative ions and radicals generated from the unsaturated aliphatic hydrocarbon monomer gas and the non-polymerizable gas, and then forming a polymer with hydrophilicity or hydrophobicity on the surface of the anode electrode by plasma deposition, and there is also provided a plasma polymerization surface modification of a metal for enhancing its applicability for use in refrigerating and air conditioning such as in constructing heat exchanges, by using an RF plasma.

摘要翻译： 根据本发明，通过使用DC放电等离子体，提供了一种金属的等离子体聚合表面改性，用于增强其在制冷和空调中的应用，例如构建热交换，其包括以下步骤：（a） 将基本上要被表面改性的金属的阳极电极和阴极电极放置在室中，（b）将室内的压力保持在预定的真空度，（c）吹送由不饱和脂族烃组成的反应气体 单体气体或含氟单体和预定压力的含硅单体气体和以预定压力进入室的非可聚合气体，以及（d）向电极施加电压以获得DC放电，从而 获得由不饱和脂肪烃单体气体和不可聚合气体产生的正离子和负离子和自由基组成的等离子体， 然后通过等离子体沉积在阳极电极的表面上形成具有亲水性或疏水性的聚合物，并且还提供金属的等离子体聚合表面改性以增强其用于制冷和空调的适用性，例如构建热交换 ，通过使用RF等离子体。

公开(公告)号：US09190407B2

公开(公告)日：2015-11-17

申请号：US14569597

申请日：2014-12-12

申请人： Byoung-Ho Kwon ,  Cheol Kim ,  Ho-Young Kim ,  Se-Jung Park ,  Myeong-Cheol Kim ,  Bo-Kyeong Kang ,  Bo-Un Yoon ,  Jae-Kwang Choi ,  Si-Young Choi ,  Suk-Hoon Jeong ,  Geum-Jung Seong ,  Hee-Don Jeong ,  Yong-Joon Choi ,  Ji-Eun Han

发明人： Byoung-Ho Kwon ,  Cheol Kim ,  Ho-Young Kim ,  Se-Jung Park ,  Myeong-Cheol Kim ,  Bo-Kyeong Kang ,  Bo-Un Yoon ,  Jae-Kwang Choi ,  Si-Young Choi ,  Suk-Hoon Jeong ,  Geum-Jung Seong ,  Hee-Don Jeong ,  Yong-Joon Choi ,  Ji-Eun Han

IPC分类号： H01L27/088 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/8234 ,  H01L29/49

CPC分类号： H01L29/7853 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3085 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0673 ,  H01L29/42364 ,  H01L29/4238 ,  H01L29/49 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/785

摘要： Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.

摘要翻译： 半导体器件可以包括具有第一半导体鳍片的半导体衬底，第一半导体鳍片端对端与第二半导体对准，第二半导体在第一和第二半导体鳍片的相对端之间具有凹陷。 第一绝缘体图案形成在第一和第二半导体鳍片的相邻侧壁附近，并且在第一凹部内形成第二绝缘体图案。 第二绝缘体图案可以具有高于第一绝缘体图案的顶表面的顶表面，例如高于鳍片（或更高或更低）的顶表面的高度。 第一和第二栅极沿第一半导体鳍片的侧壁和顶表面延伸。 可以在第二绝缘体的顶表面上形成伪栅电极。 还公开了其制造方法和修改方案。

公开(公告)号：US08916460B1

公开(公告)日：2014-12-23

申请号：US14270315

申请日：2014-05-05

申请人： Byoung-Ho Kwon ,  Cheol Kim ,  Ho-Young Kim ,  Se-Jung Park ,  Myeong-Cheol Kim ,  Bo-Kyeong Kang ,  Bo-Un Yoon ,  Jae-Kwang Choi ,  Si-Young Choi ,  Suk-Hoon Jeong ,  Geum-Jung Seong ,  Hee-Don Jeong ,  Yong-Joon Choi ,  Ji-Eun Han

发明人： Byoung-Ho Kwon ,  Cheol Kim ,  Ho-Young Kim ,  Se-Jung Park ,  Myeong-Cheol Kim ,  Bo-Kyeong Kang ,  Bo-Un Yoon ,  Jae-Kwang Choi ,  Si-Young Choi ,  Suk-Hoon Jeong ,  Geum-Jung Seong ,  Hee-Don Jeong ,  Yong-Joon Choi ,  Ji-Eun Han

IPC分类号： H01L29/49 ,  H01L29/78 ,  H01L21/336 ,  H01L29/66 ,  H01L21/8238

CPC分类号： H01L29/7853 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3085 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0673 ,  H01L29/42364 ,  H01L29/4238 ,  H01L29/49 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/785

摘要： Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.

摘要翻译： 半导体器件可以包括具有第一半导体鳍片的半导体衬底，第一半导体鳍片端对端与第二半导体对准，第二半导体在第一和第二半导体鳍片的相对端之间具有凹陷。 第一绝缘体图案形成在第一和第二半导体鳍片的相邻侧壁附近，并且在第一凹部内形成第二绝缘体图案。 第二绝缘体图案可以具有高于第一绝缘体图案的顶表面的顶表面，例如高于鳍片（或更高或更低）的顶表面的高度。 第一和第二栅极沿第一半导体鳍片的侧壁和顶表面延伸。 可以在第二绝缘体的顶表面上形成伪栅电极。 还公开了其制造方法和修改方案。

公开(公告)号：US08617991B2

公开(公告)日：2013-12-31

申请号：US13526960

申请日：2012-06-19

申请人： Jung-Chan Lee ,  Yoo-Jung Lee ,  Ki-Hyung Ko ,  Dae-Young Kwak ,  Seung-Jae Lee ,  Jae-Sung Hur ,  Sang-Bom Kang ,  Cheol Kim ,  Bo-Un Yoon

发明人： Jung-Chan Lee ,  Yoo-Jung Lee ,  Ki-Hyung Ko ,  Dae-Young Kwak ,  Seung-Jae Lee ,  Jae-Sung Hur ,  Sang-Bom Kang ,  Cheol Kim ,  Bo-Un Yoon

IPC分类号： H01L21/44

CPC分类号： H01L29/4983 ,  H01L21/76895 ,  H01L21/82345 ,  H01L29/49 ,  H01L29/66545 ,  H01L29/78

摘要： A method of manufacturing a semiconductor device includes forming an interlayer dielectric film that has first and second trenches on first and second regions of a substrate, respectively, forming a first metal layer along a sidewall and a bottom surface of the first trench and along a top surface of the interlayer dielectric film in the first region, forming a second metal layer along a sidewall and a bottom surface of the second trench and along a top surface of the interlayer dielectric film in the second region, forming a first sacrificial layer pattern on the first metal layer such that the first sacrificial layer fills a portion of the first trench, forming a first electrode layer by etching the first metal layer and the second metal layer using the first sacrificial layer pattern, and removing the first sacrificial layer pattern.

摘要翻译： 一种制造半导体器件的方法包括：在衬底的第一和第二区域上分别形成具有第一和第二沟槽的层间电介质膜，沿着第一沟槽的侧壁和底表面沿顶部形成第一金属层 在所述第一区域中的所述层间电介质膜的表面，沿着所述第二沟槽的侧壁和底表面沿着所述第二区域中的所述层间电介质膜的顶表面形成第二金属层，在所述第二区域中形成第一牺牲层图案 第一金属层，使得第一牺牲层填充第一沟槽的一部分，通过使用第一牺牲层图案蚀刻第一金属层和第二金属层形成第一电极层，以及去除第一牺牲层图案。

公开(公告)号：US20130182522A1

公开(公告)日：2013-07-18

申请号：US13613492

申请日：2012-09-13

申请人： Young-Il LIM ,  Cheol Kim ,  Jung Sik Kim ,  Yun Sang Lee

发明人： Young-Il LIM ,  Cheol Kim ,  Jung Sik Kim ,  Yun Sang Lee

IPC分类号： G11C11/402

CPC分类号： G11C11/406 ,  G11C5/04 ,  G11C8/12 ,  G11C11/40618

摘要： A method of operating a memory device includes masking at least one bank among a plurality of banks in response to a mode register writing command; and performing a refresh operation on a plurality of rows in one of unmasked banks in response to a first per-bank refresh command.

摘要翻译： 操作存储器件的方法包括响应于模式寄存器写入命令来屏蔽多个存储体中的至少一个存储体; 以及响应于第一个每个银行刷新命令，对未屏蔽的银行之一中的多个行执行刷新操作。