公开(公告)号：US06765266B2

公开(公告)日：2004-07-20

申请号：US10308085

申请日：2002-12-03

申请人： Yoshihiko Ozeki ,  Yutaka Tomatsu ,  Norihito Tokura ,  Haruo Kawakita

发明人： Yoshihiko Ozeki ,  Yutaka Tomatsu ,  Norihito Tokura ,  Haruo Kawakita

IPC分类号： H01L2360

CPC分类号： H01L29/404 ,  H01L27/0251 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor device of the present invention, a first semiconductor region is formed so that a peripheral edge thereof is located between a first field plate ring that corresponds to one of field plate rings located at the innermost side thereof and a second field plate ring that corresponds to one of the field plate rings adjacent the first plate ring. Accordingly, when a surge voltage is applied to the semiconductor device of the present invention, an electric field concentration at a part of the isolation film located under the first one of the field plate rings is relaxed and an electric field intensity decreases. Therefore, the reliability of the isolation film for withstanding the surge voltage increases.

摘要翻译： 在本发明的半导体器件中，形成第一半导体区域，使得其周缘位于与位于其最内侧的场板环之一相对应的第一场板环与第二场板环之间， 对应于邻近第一板环的场板环中的一个。 因此，当对本发明的半导体器件施加浪涌电压时，位于第一场的场板环之下的隔离膜的一部分处的电场浓度被放宽，并且电场强度降低。 因此，用于耐受浪涌电压的隔离膜的可靠性增加。

公开(公告)号：US07786606B2

公开(公告)日：2010-08-31

申请号：US11945807

申请日：2007-11-27

申请人： Mitsuyasu Enomoto ,  Haruo Kawakita ,  Takashi Ohno

发明人： Mitsuyasu Enomoto ,  Haruo Kawakita ,  Takashi Ohno

IPC分类号： H01L23/29

CPC分类号： H01L21/565 ,  H01L23/3135 ,  H01L23/49503 ,  H01L23/49531 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05553 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48472 ,  H01L2224/49171 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/351 ,  H05K3/0061 ,  H05K3/284 ,  H05K3/386 ,  H05K2201/09745 ,  H05K2203/1316 ,  H05K2203/1322 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A resin-sealed semiconductor device includes a metal frame, an electronic substrate, an adhesive agent, a molded resin, and a bonding agent. The electronic substrate includes a first surface having a circuit element wiring part, a second surface facing the metal frame, and a side surface arranged approximately perpendicularly to the first surface and the second surface. The adhesive agent is disposed between the metal frame and the second surface to cover the second surface and a portion of the side surface adjacent to the second surface. The molded resin covers the metal frame and the electronic substrate, and holds the other portion of the side surface adjacent to the first surface. The bonding agent is disposed between the circuit element wiring part and the molded resin so that the molded resin holds the circuit element wiring part through the bonding agent.

摘要翻译： 树脂密封半导体器件包括金属框架，电子基板，粘合剂，模制树脂和粘合剂。 电子基板包括具有电路元件布线部分的第一表面，与金属框架相对的第二表面以及大致垂直于第一表面和第二表面布置的侧表面。 粘合剂设置在金属框架和第二表面之间以覆盖第二表面和与第二表面相邻的侧表面的一部分。 模制树脂覆盖金属框架和电子基板，并且保持侧表面的另一部分与第一表面相邻。 接合剂配置在电路元件布线部和模制树脂之间，使得模制树脂通过粘合剂保持电路元件布线部分。

公开(公告)号：US07131437B2

公开(公告)日：2006-11-07

申请号：US11118327

申请日：2005-05-02

申请人： Koji Ando ,  Haruo Kawakita

发明人： Koji Ando ,  Haruo Kawakita

IPC分类号： F02P3/05 ,  F02P3/055

CPC分类号： F02P3/0552

摘要： An ignition device for an internal combustion engine includes a power transistor connected to a primary coil of an ignition coil, a current sensing resistor connected in series with the power transistor, a constant current circuit and an abnormal oscillation control circuit that connects the gate resistor with the feedback circuit when the constant current circuit controls the primary current to be constant. The constant current circuit has a gate resistor connected in series to the control gate of the power transistor and a feedback circuit connected between the gate resistor and the current sensing resistor and controls current supplied to a control gate of the power transistor so as to control the primary current to be constant.

摘要翻译： 一种用于内燃机的点火装置包括连接到点火线圈的初级线圈的功率晶体管，与功率晶体管串联的电流感测电阻器，恒流电路和异常振荡控制电路，其将栅极电阻器与 当恒流电路控制初级电流恒定时，反馈电路。 恒流电路具有串联连接到功率晶体管的控制栅极的栅极电阻器和连接在栅极电阻器和电流检测电阻器之间的反馈电路，并且控制提供给功率晶体管的控制栅极的电流，以便控制 初级电流恒定。

公开(公告)号：US07131436B2

公开(公告)日：2006-11-07

申请号：US11194581

申请日：2005-08-02

申请人： Haruo Kawakita ,  Koji Ando

发明人： Haruo Kawakita ,  Koji Ando

IPC分类号： F02P3/055

CPC分类号： F02P3/0556 ,  F02D2041/2072 ,  F02P3/0554 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48257

摘要： An ignition system for an internal combustion engine is connected to an ignition coil and to a circuit for providing an ignition signal. The ignition system includes a switch circuit connected to the ignition coil that switches on or off current supplied to the ignition coil, a control circuit that controls the switch circuit based on the ignition signal and a protection circuit that includes a pair of back-to-back connected zener diodes connected between the input terminal of the control circuit and a ground.

摘要翻译： 用于内燃机的点火系统连接到点火线圈和用于提供点火信号的电路。 点火系统包括连接到点火线圈的开关电路，其接通或关闭提供给点火线圈的电流;控制电路，其基于点火信号控制开关电路;以及保护电路，其包括一对背靠背， 连接在控制电路的输入端和地之间的后连接的齐纳二极管。

公开(公告)号：US20080006256A1

公开(公告)日：2008-01-10

申请号：US11806337

申请日：2007-05-31

申请人： Takashi Oono ,  Haruo Kawakita

发明人： Takashi Oono ,  Haruo Kawakita

IPC分类号： F02P3/05 ,  H03K17/60

CPC分类号： H03K17/567 ,  F02P3/0442 ,  F02P3/055 ,  H03K17/0828 ,  H03K17/18

摘要： In an engine ignition system, an igniter for an ignition coil is connected to an ECU through a signal wire. The signal wire is grounded via the collector and the emitter of a bipolar transistor of an output circuit of the igniter. A constant current source outputs a current to the base of the bipolar transistor. Switching transistors are connected between the emitter and base of the bipolar transistor. When all the switching transistors are turned off, the bipolar transistor is turned on.

摘要翻译： 在发动机点火系统中，用于点火线圈的点火器通过信号线连接到ECU。 信号线通过点火器输出电路的双极晶体管的集电极和发射极接地。 恒流源将电流输出到双极晶体管的基极。 开关晶体管连接在双极晶体管的发射极和基极之间。 当所有开关晶体管截止时，双极晶体管导通。

公开(公告)号：US20060027220A1

公开(公告)日：2006-02-09

申请号：US11194581

申请日：2005-08-02

申请人： Haruo Kawakita ,  Koji Ando

发明人： Haruo Kawakita ,  Koji Ando

IPC分类号： F02P3/05

CPC分类号： F02P3/0556 ,  F02D2041/2072 ,  F02P3/0554 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48257

摘要： An ignition system for an internal combustion engine is connected to an ignition coil and to a circuit means for providing an ignition signal. The ignition system includes a switch circuit connected to the ignition coil that switches on or off current supplied to the ignition coil, a control circuit that controls the switch circuit based on the ignition signal and a protection circuit that includes a pair back-to-back connected zener diodes connected between the input terminal of the control circuit and a ground.

摘要翻译： 用于内燃机的点火系统连接到点火线圈和用于提供点火信号的电路装置。 点火系统包括连接到点火线圈的开关电路，其接通或关断提供给点火线圈的电流;控制电路，其基于点火信号控制开关电路;以及保护电路，其包括一对背对背 连接的齐纳二极管连接在控制电路的输入端和地之间。

公开(公告)号：US20050269674A1

公开(公告)日：2005-12-08

申请号：US11142346

申请日：2005-06-02

申请人： Haruo Kawakita ,  Koji Ando

发明人： Haruo Kawakita ,  Koji Ando

IPC分类号： H01L23/34 ,  H01L23/495

CPC分类号： H01L23/49575 ,  H01L23/34 ,  H01L23/49562 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/10161 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

摘要： Semiconductor equipment includes: a first lead frame having a first semiconductor device; a second lead frame having a second semiconductor device; a thermal resistor for preventing heat transfer from the first lead frame to the second lead frame; and a temperature sensitive device for detecting operational temperature of the first semiconductor device. The first lead frame is separated from the second lead frame by a predetermined distance. The thermal resistor is disposed in a clearance between the first lead frame and the second lead frame. The second semiconductor device controls to restrict operation of the first semiconductor device when the operational temperature of the first semiconductor device is higher than a predetermined temperature.

摘要翻译： 半导体设备包括：具有第一半导体器件的第一引线框架; 具有第二半导体器件的第二引线框架; 用于防止从第一引线框架传递到第二引线框架的热传导电阻器; 以及用于检测第一半导体器件的工作温度的温度敏感器件。 第一引线框架与第二引线框架分开预定距离。 热电阻器设置在第一引线框架和第二引线框架之间的间隙中。 当第一半导体器件的工作温度高于预定温度时，第二半导体器件控制第一半导体器件的操作。

公开(公告)号：US06452219B1

公开(公告)日：2002-09-17

申请号：US08917488

申请日：1997-08-26

申请人： Yoshiyuki Miyase ,  Naohito Kato ,  Haruo Kawakita ,  Naoto Okabe

发明人： Yoshiyuki Miyase ,  Naohito Kato ,  Haruo Kawakita ,  Naoto Okabe

IPC分类号： H01L2974

CPC分类号： H01L29/66333 ,  H01L29/1095 ,  H01L29/7395 ,  Y10S257/913

摘要： An IGBT having a buffer layer for shortening the turn-off time and for preventing the latching up is improved. The buffer layer of the present invention is not bare at the edge of a diced cross-section of the IGBT chip. According to this construction, a withstanding voltage between a semiconductor substrate and the buffer layer is lower than the withstand voltage of the pn junction at the edge of the diced cross-section. Therefore, the whole pn junction between the semiconductor substrate and the buffer layer, which has wide area, breaks down, as a result, energy caused by a negative voltage is absorbed, and the withstanding voltage against the negative voltage is improved.

摘要翻译： 具有用于缩短关断时间和防止闭锁的缓冲层的IGBT得到改善。 本发明的缓冲层在IGBT芯片的切割截面的边缘处不裸露。 根据这种结构，半导体衬底和缓冲层之间的耐电压低于切割截面边缘处的pn结的耐电压。 因此，半导体衬底与具有宽面积的缓冲层之间的整个pn结被分解，结果，由负电压引起的能量被吸收，并且抵抗负电压的耐受电压提高。

公开(公告)号：US5801445A

公开(公告)日：1998-09-01

申请号：US818729

申请日：1997-03-14

申请人： Yasuo Ishihara ,  Haruo Kawakita ,  Naoto Okabe

发明人： Yasuo Ishihara ,  Haruo Kawakita ,  Naoto Okabe

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/60 ,  H01L21/607 ,  H01L29/45 ,  H01L29/78 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L29/76

CPC分类号： H01L29/456 ,  H01L21/28512 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L24/85 ,  H01L29/7813 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05073 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45099 ,  H01L2224/45124 ,  H01L2224/4847 ,  H01L2224/48724 ,  H01L2224/85205 ,  H01L24/45 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/05042 ,  H01L2924/12036 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/2076

摘要： A semiconductor device has an electrode interposed between an interlayer insulation film and a wire which is bonded thereto. A main component of the electrode is aluminum and the electrode contains fine-grained silicon in a concentration of 0.1 to 0.6 weight %. As a result, even if large ultrasonic power, a large load or the like is applied to the electrode when the wire is wire-bonded, damage such as the formation of a crack hardly generates at the interlayer insulation film. Therefore, the occurrence of defects due to the wire-bonding can be reduced.

摘要翻译： 半导体器件具有介于层间绝缘膜和与其结合的导线之间的电极。 电极的主要成分是铝，电极含有浓度为0.1〜0.6重量％的细晶硅。 结果，即使在线材接合时，即使大的超声波功率，大的负载等被施加到电极，在层间绝缘膜处几乎不产生诸如形成裂纹的损伤。 因此，可以减少由于引线接合引起的缺陷的发生。

公开(公告)号：US07819110B2

公开(公告)日：2010-10-26

申请号：US12014156

申请日：2008-01-15

申请人： Mitsunobu Niwa ,  Haruo Kawakita

发明人： Mitsunobu Niwa ,  Haruo Kawakita

IPC分类号： H01F38/12 ,  H03B1/00

CPC分类号： H01F38/12 ,  H01F27/022 ,  H01F27/40 ,  H01L21/761 ,  H01L21/76286 ,  H01L29/0821 ,  H01L29/10 ,  H01L29/7317 ,  H01L29/7322 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： An ignition coil includes a coil portion and an igniter. The coil portion has a primary coil, a secondary coil, and a coil case. The primary coil and the secondary coil are disposed in the coil case. The igniter is disposed on one end side of the coil portion. The igniter includes a metallic frame connected to a voltage source at a constant potential, and a semiconductor integrated chip disposed on the metallic frame. The semiconductor integrated chip has a control circuit for controlling a switching element. The control circuit is formed by a dielectric isolation method. A surface of the semiconductor integrated chip on a silicon substrate-side is opposed to the metallic frame.

摘要翻译： 点火线圈包括线圈部分和点火器。 线圈部分具有初级线圈，次级线圈和线圈壳体。 初级线圈和次级线圈设置在线圈壳体中。 点火器设置在线圈部分的一端侧。 点火器包括以恒定电位连接到电压源的金属框架和设置在金属框架上的半导体集成芯片。 半导体集成芯片具有用于控制开关元件的控制电路。 控制电路由绝缘隔离法形成。 硅基板侧的半导体集成芯片的表面与金属框架相对。