OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    2.
    发明申请
    OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    光学半导体器件及其制造方法

    公开(公告)号:US20110297987A1

    公开(公告)日:2011-12-08

    申请号:US13154999

    申请日:2011-06-07

    IPC分类号: H01L33/50

    摘要: According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.

    摘要翻译: 根据一个实施例,光学半导体器件包括发光层,透明层,第一金属柱,第二金属柱和密封层。 发光层包括第一和第二主表面,第一和第二电极。 第二主表面是与第一主表面相对的表面,并且第一电极和第二电极形成在第二主表面上。 透明层设置在第一主表面上。 第一金属柱设置在第一电极上。 第二金属柱设置在第二电极上。 密封层设置在第二主表面上。 密封层覆盖发光层的侧表面,并且密封第一和第二金属柱,同时使第一和第二金属柱的端部露出。

    Semiconductor light emitting device
    4.
    发明授权
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号:US08614455B2

    公开(公告)日:2013-12-24

    申请号:US13424687

    申请日:2012-03-20

    IPC分类号: H01L33/00

    摘要: According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.

    摘要翻译: 根据实施例,半导体发光器件包括层叠体,第一和第二电极,第一和第二互连,第一和第二柱以及第一绝缘层。 层叠体包括第一和第二半导体层和发光层。 第一和第二电极分别连接到第一和第二半导体层。 第一和第二互连分别连接到第一和第二电极。 第一和第二支柱分别连接到第一和第二互连。 第一绝缘层设置在互连和支柱上。 第一和第二支柱具有暴露在第一绝缘层的表面中的第一和第二监视器焊盘。 第一和第二互连具有暴露在与第一绝缘层的表面连接的侧面中的第一和第二接合焊盘。

    Light source apparatus using semiconductor light emitting device
    5.
    发明授权
    Light source apparatus using semiconductor light emitting device 失效
    使用半导体发光元件的光源装置

    公开(公告)号:US08569787B2

    公开(公告)日:2013-10-29

    申请号:US13154916

    申请日:2011-06-07

    IPC分类号: H01L33/00

    摘要: According to one embodiment, a light source apparatus includes a semiconductor light emitting device, a mounting substrate, first and second connection members. The semiconductor light emitting device includes a light emitting unit, first and second conductive members, a sealing member, and an optical layer. The mounting substrate includes a base body, first and second substrate electrodes. The connection member electrically connects the conductive member to the substrate electrode. The conductive member is electrically connected to the light emitting unit electrode and includes first and second columnar portions provided on the second major surface. The sealing member covers side surfaces of the first and the second conductive members. The optical layer is provided on the first major surface of the semiconductor stacked body and includes a wavelength conversion unit. A surface area of the second substrate electrode is not less than 100 times a cross-sectional area of the second columnar portion.

    摘要翻译: 根据一个实施例,光源装置包括半导体发光器件,安装衬底,第一和第二连接构件。 半导体发光器件包括发光单元,第一和第二导电构件,密封构件和光学层。 安装基板包括基体,第一和第二基板电极。 连接构件将导电构件电连接到基板电极。 导电构件电连接到发光单元电极,并且包括设置在第二主表面上的第一和第二柱状部分。 密封构件覆盖第一导电构件和第二导电构件的侧表面。 光学层设置在半导体层叠体的第一主表面上并且包括波长转换单元。 第二基板电极的表面积不小于第二柱状部分的横截面面积的100倍。

    Semiconductor light emitting device and method for manufacturing same
    6.
    发明授权
    Semiconductor light emitting device and method for manufacturing same 有权
    半导体发光器件及其制造方法

    公开(公告)号:US08350283B2

    公开(公告)日:2013-01-08

    申请号:US13152654

    申请日:2011-06-03

    IPC分类号: H01L33/50

    摘要: According to one embodiment, a semiconductor light emitting device includes a light emitting unit, first and second conductive members, an insulating layer, a sealing member, and an optical layer. The light emitting unit includes a semiconductor stacked body and first and second electrodes. The semiconductor stacked body includes first and second semiconductor layers and a light emitting layer, and has a major surface on a second semiconductor layer side. The first and second electrodes are connected to the first and second semiconductor layers on the major surface side, respectively. The first conductive member is connected to the first electrode and includes a first columnar portion covering a portion of the second semiconductor. The insulating layer is provided between the first columnar portion and the portion of the second semiconductor. The sealing member covers side surfaces of the conductive members. The optical layer is provided on the other major surface.

    摘要翻译: 根据一个实施例,半导体发光器件包括发光单元,第一和第二导电构件,绝缘层,密封构件和光学层。 发光单元包括半导体层叠体和第一和第二电极。 半导体层叠体包括第一和第二半导体层和发光层,并且在第二半导体层侧具有主表面。 第一和第二电极分别连接到主表面侧的第一和第二半导体层。 第一导电构件连接到第一电极并且包括覆盖第二半导体的一部分的第一柱状部分。 绝缘层设置在第一柱状部分和第二半导体的部分之间。 密封构件覆盖导电构件的侧表面。 光学层设置在另一个主表面上。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    7.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20110297983A1

    公开(公告)日:2011-12-08

    申请号:US13152654

    申请日:2011-06-03

    IPC分类号: H01L33/50

    摘要: According to one embodiment, a semiconductor light emitting device includes a light emitting unit, first and second conductive members, an insulating layer, a sealing member, and an optical layer. The light emitting unit includes a semiconductor stacked body and first and second electrodes. The semiconductor stacked body includes first and second semiconductor layers and a light emitting layer, and has a major surface on a second semiconductor layer side. The first and second electrodes are connected to the first and second semiconductor layers on the major surface side, respectively. The first conductive member is connected to the first electrode and includes a first columnar portion covering a portion of the second semiconductor. The insulating layer is provided between the first columnar portion and the portion of the second semiconductor. The sealing member covers side surfaces of the conductive members. The optical layer is provided on the other major surface.

    摘要翻译: 根据一个实施例,半导体发光器件包括发光单元,第一和第二导电构件,绝缘层,密封构件和光学层。 发光单元包括半导体层叠体和第一和第二电极。 半导体层叠体包括第一和第二半导体层和发光层,并且在第二半导体层侧具有主表面。 第一和第二电极分别连接到主表面侧的第一和第二半导体层。 第一导电构件连接到第一电极并且包括覆盖第二半导体的一部分的第一柱状部分。 绝缘层设置在第一柱状部分和第二半导体的部分之间。 密封构件覆盖导电构件的侧表面。 光学层设置在另一个主表面上。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    9.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 失效
    半导体发光器件及其制造方法

    公开(公告)号:US20120241792A1

    公开(公告)日:2012-09-27

    申请号:US13424687

    申请日:2012-03-20

    IPC分类号: H01L33/60 H01L33/00

    摘要: According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.

    摘要翻译: 根据实施例,半导体发光器件包括层叠体,第一和第二电极,第一和第二互连,第一和第二柱以及第一绝缘层。 层叠体包括第一和第二半导体层和发光层。 第一和第二电极分别连接到第一和第二半导体层。 第一和第二互连分别连接到第一和第二电极。 第一和第二支柱分别连接到第一和第二互连。 第一绝缘层设置在互连和支柱上。 第一和第二支柱具有暴露在第一绝缘层的表面中的第一和第二监视器焊盘。 第一和第二互连具有暴露在与第一绝缘层的表面连接的侧面中的第一和第二接合焊盘。

    LIGHT SOURCE APPARATUS USING SEMICONDUCTOR LIGHT EMITTING DEVICE
    10.
    发明申请
    LIGHT SOURCE APPARATUS USING SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
    使用半导体发光装置的光源装置

    公开(公告)号:US20110297986A1

    公开(公告)日:2011-12-08

    申请号:US13154916

    申请日:2011-06-07

    IPC分类号: H01L33/50

    摘要: According to one embodiment, a light source apparatus includes a semiconductor light emitting device, a mounting substrate, first and second connection members. The semiconductor light emitting device includes a light emitting unit, first and second conductive members, a sealing member, and an optical layer. The mounting substrate includes a base body, first and second substrate electrodes. The connection member electrically connects the conductive member to the substrate electrode. The conductive member is electrically connected to the light emitting unit electrode and includes first and second columnar portions provided on the second major surface. The sealing member covers side surfaces of the first and the second conductive members. The optical layer is provided on the first major surface of the semiconductor stacked body and includes a wavelength conversion unit. A surface area of the second substrate electrode is not less than 100 times a cross-sectional area of the second columnar portion.

    摘要翻译: 根据一个实施例,光源装置包括半导体发光器件,安装衬底,第一和第二连接构件。 半导体发光器件包括发光单元,第一和第二导电构件,密封构件和光学层。 安装基板包括基体,第一和第二基板电极。 连接构件将导电构件电连接到基板电极。 导电构件电连接到发光单元电极,并且包括设置在第二主表面上的第一和第二柱状部分。 密封构件覆盖第一和第二导电构件的侧表面。 光学层设置在半导体层叠体的第一主表面上并且包括波长转换单元。 第二基板电极的表面积不小于第二柱状部分的横截面面积的100倍。