公开(公告)号：US08492256B2

公开(公告)日：2013-07-23

申请号：US13084603

申请日：2011-04-12

Applicant: Yuichi Urano

Inventor： Yuichi Urano

IPC: H01L21/20

CPC classification number: H01L21/6836 ,  H01L23/3107 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2221/68372 ,  H01L2221/68386 ,  H01L2224/03464 ,  H01L2224/0381 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05571 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/06181 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48644 ,  H01L2224/48699 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/741 ,  H01L2224/93 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01043 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2224/03 ,  H01L2924/01015 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2224/05552

Abstract: A method of manufacturing a semiconductor apparatus includes forming back surface electrode 4 on back surface of semiconductor wafer 20, that bends convexly toward the front surface side due to back surface electrode 4 being formed; treating the back surface with a plasma for removing the deposits on the back surface; sticking removable adhesive tape 23 to the back surface along the warp thereof for maintaining the bending state of semiconductor wafer 20 after the step of sticking; electrolessly plating to form film 26 on the front surface of semiconductor wafer 20; peeling off removable adhesive tape 23; cutting out semiconductor chips; and mounting the semiconductor chip by bonding with a solder for manufacturing a semiconductor apparatus. The manufacturing method prevents external appearance anomalies from occurring on the back surface electrode, improves the reliability, and allows manufacture of the semiconductor apparatuses with a high throughput of non-defective products.

Abstract translation: 制造半导体装置的方法包括在半导体晶片20的背面形成背面电极4，该背面电极4由于形成背面电极4而朝前表面侧凸出; 用等离子体处理后表面以去除背面上的沉积物; 将可移除的胶带23沿其翘曲粘附到后表面，以在粘附步骤之后保持半导体晶片20的弯曲状态; 无电镀以在半导体晶片20的前表面上形成薄膜26; 剥去可拆卸胶带23; 切出半导体芯片; 以及通过与用于制造半导体装置的焊料接合来安装半导体芯片。 制造方法防止在背面电极上发生外观异常，提高可靠性，并且可以制造具有高产量的无缺陷产品的半导体装置。

公开(公告)号：US6121097A

公开(公告)日：2000-09-19

申请号：US72903

申请日：1998-05-05

Applicant: Yuichi Urano ,  Masato Nishizawa ,  Yoshiyuki Sakai ,  Naoki Ito ,  Shinichi Hashimoto

Inventor： Yuichi Urano ,  Masato Nishizawa ,  Yoshiyuki Sakai ,  Naoki Ito ,  Shinichi Hashimoto

IPC: H01L21/02 ,  H01L21/76 ,  H01L21/762 ,  H01L27/08 ,  H01L27/12 ,  H01L21/336

CPC classification number: H01L21/7624 ,  H01L21/76264 ,  H01L21/76281 ,  H01L21/76286 ,  Y10S438/92

Abstract: A polysilicon film is deposited in a trench formed in a silicon element substrate. The polysilicon film in the trench and on the silicon element substrate is anisotropically etched, so that the film remains on the side wall of the trench. The polysilicon film on the side wall is oxidized to obtain an insulating film, which buries the trench. At the same time, an oxidized film is formed on the surface of the silicon element substrate to complete a trench-mold separation area.

Abstract translation: 多晶硅膜沉积在形成于硅元件衬底中的沟槽中。 在沟槽和硅元件衬底上的多晶硅膜被各向异性蚀刻，使得膜保留在沟槽的侧壁上。 侧壁上的多晶硅膜被氧化以获得绝缘膜，该绝缘膜埋入沟槽。 同时，在硅元件基板的表面上形成氧化膜，形成沟槽模分离区域。

公开(公告)号：US20100240213A1

公开(公告)日：2010-09-23

申请号：US12659816

申请日：2010-03-22

Applicant: Yuichi Urano ,  Takayasu Horasawa

Inventor： Yuichi Urano ,  Takayasu Horasawa

IPC: H01L21/283 ,  H01L21/285

CPC classification number: H01L29/66712 ,  H01L21/288 ,  H01L21/32134 ,  H01L29/456 ,  H01L29/66333

Abstract: A method of manufacturing a semiconductor device on a semiconductor substrate, includes the steps of forming a first metal film on a front surface of the semiconductor substrate; forming a second metal film on the surface of the first metal film; activating a surface of the second metal film to provide an activated surface; and forming a plated film on the activated surface by a wet plating method in a plating bath that includes a reducing agent that is oxidized during plating and that has a rate of oxidation, wherein the second metal film is a metal film mainly composed of a first substance that enhances the rate of oxidation of the reducing agent in the plating bath. Wet plating is preferably an electroless process.

Abstract translation: 一种在半导体衬底上制造半导体器件的方法，包括在半导体衬底的前表面上形成第一金属膜的步骤; 在所述第一金属膜的表面上形成第二金属膜; 激活所述第二金属膜的表面以提供活化表面; 以及在电镀槽中通过湿式电镀法在活化表面上形成镀膜，所述镀液包括在电镀期间被氧化并具有氧化速率的还原剂，其中所述第二金属膜是主要由第一 提高电镀浴中还原剂的氧化速率的物质。 湿法电镀优选为无电解方法。

公开(公告)号：US08709912B2

公开(公告)日：2014-04-29

申请号：US12937434

申请日：2009-04-15

Applicant: Yuichi Urano ,  Kenichi Kazama

Inventor： Yuichi Urano ,  Kenichi Kazama

IPC: H01L21/30

CPC classification number: H01L21/6715 ,  H01L21/304 ,  H01L21/67028 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/6835 ,  H01L2221/68327 ,  H01L2221/6834

Abstract: Even when a substrate for treatment is joined with a supporting substrate having an outer shape larger than that of the substrate for treatment, with a photothermal conversion layer and an adhesive layer interposed, and the surface of the substrate for treatment on the side opposite this joined surface is treated, the occurrence of a defective external appearance on the treatment surface of the substrate for treatment is prevented.An adhesive layer 4 is formed on one surface of a substrate for treatment 3, a photothermal conversion layer 2 is formed on one surface of a supporting substrate 1 having a surface with an outer shape larger than that of the surface of the substrate for treatment, and the substrate for treatment 3 is bonded onto the surface of the photothermal conversion layer 2 with the adhesive layer 4 interposed, to obtain a layered member. This layered member is placed on a spin chuck 9 in a chamber 8 of a spin coater device, an alkaline aqueous solution 11 is dropped onto a portion 2a of the photothermal conversion layer 2 which protrudes from the substrate for treatment, and thereafter cleaning is performed on this portion using a high-pressure cleaning nozzle 12. Then, grinding, wet treatment, or similar treatment is performed on the surface of the substrate for treatment 3, to manufacture a semiconductor device.

Abstract translation: 即使将处理用基板与外部形状大于用于处理的基板的支撑基板接合，也可以将光热转换层和粘合剂层插入，并且与该基板相反的一侧进行处理的基板的表面 表面被处理，防止在用于处理的基板的处理表面上出现有缺陷的外观。 在用于处理的基板3的一个表面上形成粘合剂层4，在具有大于基板表面的表面的表面的支撑基板1的一个表面上形成光热转换层2用于处理， 并且将处理用基板3粘合到光热转换层2的表面上，并粘合层4插入，得到层叠体。 将该分层部件放置在旋涂机装置的室8内的旋转卡盘9上，将碱性水溶液11滴落到从基板突出的光热转换层2的部分2a上进行处理，然后进行清洗 在该部分上使用高压清洁喷嘴12.然后，在用于处理的基板3的表面上进行研磨，湿处理或类似的处理，以制造半导体器件。

公开(公告)号：US08518804B2

公开(公告)日：2013-08-27

申请号：US13278164

申请日：2011-10-20

Applicant: Yuichi Urano

Inventor： Yuichi Urano

IPC: H01L21/301 ,  H01L21/46 ,  H01L21/78

CPC classification number: H01L29/66333 ,  H01L21/67115 ,  Y10T29/41

Abstract: A semiconductor device manufacturing method and manufacturing apparatus with which it is possible, when a wafer has a warp, to effectively peel off an ultraviolet peelable tape with ultraviolet irradiation of a short duration. Even when a wafer has a warp, by correcting the warp of the wafer with an ultraviolet transmitting plate, and uniformly irradiating an ultraviolet peelable tape attached to the wafer with ultraviolet light, it is possible to reduce a distance between an ultraviolet light source and the ultraviolet peelable tape. Also, by blocking heat from the ultraviolet light source with the ultraviolet transmitting plate, it is possible to suppress a rise in temperature of the wafer. As a result of this, it is possible to effectively peel the ultraviolet peelable tape from the wafer with ultraviolet irradiation of a short duration without any adhesive residue remaining.

Abstract translation: 一种半导体器件制造方法和制造装置，当晶片具有翘曲时，可以用短时间的紫外线照射有效地剥离紫外线剥离带。 即使当晶片具有翘曲时，通过用紫外线透射板校正晶片的翘曲，并且用紫外线均匀地照射安装在晶片上的紫外线剥离带，可以减少紫外光源和 紫外线剥离胶带 此外，通过用紫外线透射板阻挡来自紫外线光源的热量，可以抑制晶片的温度上升。 结果，可以用短时间的紫外线照射有效地将紫外线剥离带从晶片上剥离，而不会残留残留的粘合剂残留物。

公开(公告)号：US5854120A

公开(公告)日：1998-12-29

申请号：US769031

申请日：1996-12-17

Applicant: Yuichi Urano ,  Masato Nishizawa ,  Yoshiyuki Sakai ,  Naoki Ito ,  Shinichi Hashimoto

Inventor： Yuichi Urano ,  Masato Nishizawa ,  Yoshiyuki Sakai ,  Naoki Ito ,  Shinichi Hashimoto

IPC: H01L21/02 ,  H01L21/76 ,  H01L21/762 ,  H01L27/08 ,  H01L27/12

CPC classification number: H01L21/7624 ,  H01L21/76264 ,  H01L21/76281 ,  H01L21/76286 ,  Y10S438/92

Abstract: A polysilicon film is deposited in a trench formed in a silicon element substrate. The polysilicon film in the trench and on the silicon element substrate is anisotropically etched, so that the film remains on the side wall of the trench. The polysilicon film on the side wall is oxidized to obtain an insulating film, which buries the trench. At the same time, an oxidized film is formed on the surface of the silicon element substrate to complete a trench-mold separation area.

公开(公告)号：US08198104B2

公开(公告)日：2012-06-12

申请号：US12659816

申请日：2010-03-22

Applicant: Yuichi Urano ,  Takayasu Horasawa

Inventor： Yuichi Urano ,  Takayasu Horasawa

IPC: H01L21/00

CPC classification number: H01L29/66712 ,  H01L21/288 ,  H01L21/32134 ,  H01L29/456 ,  H01L29/66333

Abstract: A method of manufacturing a semiconductor device on a semiconductor substrate, includes the steps of forming a first metal film on a front surface of the semiconductor substrate; forming a second metal film on the surface of the first metal film; activating a surface of the second metal film to provide an activated surface; and forming a plated film on the activated surface by a wet plating method in a plating bath that includes a reducing agent that is oxidized during plating and that has a rate of oxidation, wherein the second metal film is a metal film mainly composed of a first substance that enhances the rate of oxidation of the reducing agent in the plating bath. Wet plating is preferably an electroless process.

Abstract translation: 一种在半导体衬底上制造半导体器件的方法，包括在半导体衬底的前表面上形成第一金属膜的步骤; 在所述第一金属膜的表面上形成第二金属膜; 激活第二金属膜的表面以提供活化表面; 以及在电镀槽中通过湿式电镀法在活化表面上形成镀膜，所述镀液包括在电镀期间被氧化并具有氧化速率的还原剂，其中所述第二金属膜是主要由第一 提高电镀浴中还原剂的氧化速率的物质。 湿法电镀优选为无电解方法。

公开(公告)号：US20110129989A1

公开(公告)日：2011-06-02

申请号：US12937434

申请日：2009-04-15

Applicant: Yuichi Urano ,  Kenichi Kazama

Inventor： Yuichi Urano ,  Kenichi Kazama

IPC: H01L21/762 ,  B08B3/00

CPC classification number: H01L21/6715 ,  H01L21/304 ,  H01L21/67028 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/6835 ,  H01L2221/68327 ,  H01L2221/6834

Abstract: Even when a substrate for treatment is joined with a supporting substrate having an outer shape larger than that of the substrate for treatment, with a photothermal conversion layer and an adhesive layer interposed, and the surface of the substrate for treatment on the side opposite this joined surface is treated, the occurrence of a defective external appearance on the treatment surface of the substrate for treatment is prevented.An adhesive layer 4 is formed on one surface of a substrate for treatment 3, a photothermal conversion layer 2 is formed on one surface of a supporting substrate 1 having a surface with an outer shape larger than that of the surface of the substrate for treatment, and the substrate for treatment 3 is bonded onto the surface of the photothermal conversion layer 2 with the adhesive layer 4 interposed, to obtain a layered member. This layered member is placed on a spin chuck 9 in a chamber 8 of a spin coater device, an alkaline aqueous solution 11 is dropped onto a portion 2a of the photothermal conversion layer 2 which protrudes from the substrate for treatment, and thereafter cleaning is performed on this portion using a high-pressure cleaning nozzle 12. Then, grinding, wet treatment, or similar treatment is performed on the surface of the substrate for treatment 3, to manufacture a semiconductor device.

Abstract translation: 即使将处理用基板与外部形状大于用于处理的基板的支撑基板接合，也可以将光热转换层和粘合剂层插入，并且与该基板相反的一侧进行处理的基板的表面 表面被处理，防止在用于处理的基板的处理表面上出现有缺陷的外观。 在用于处理的基板3的一个表面上形成粘合剂层4，在具有大于基板表面的表面的表面的支撑基板1的一个表面上形成光热转换层2用于处理， 并且将处理用基板3粘合到光热转换层2的表面上，并粘合层4插入，得到层叠体。 将该分层部件放置在旋涂机装置的室8内的旋转卡盘9上，将碱性水溶液11滴落到从基板突出的光热转换层2的部分2a处理后，进行清洗 在该部分上使用高压清洁喷嘴12.然后，在用于处理的基板3的表面上进行研磨，湿处理或类似的处理，以制造半导体器件。

公开(公告)号：US07947586B2

公开(公告)日：2011-05-24

申请号：US12700044

申请日：2010-02-04

Applicant: Yuichi Urano

Inventor： Yuichi Urano

IPC: H01L21/20

CPC classification number: H01L21/288 ,  C25D5/028 ,  C25D7/12 ,  H01L29/66333 ,  H01L29/7395

Abstract: A method of manufacturing a semiconductor device is disclosed, wherein a plating layer is formed on a first surface side of a semiconductor substrate stably and at a low cost, while preventing the plating liquid from being contaminated and avoiding deposition of uneven plating layer on a second surface side. An electrode is formed on the first surface of the semiconductor substrate, and another electrode is formed on the second surface. A curing resin is applied on the electrode on the second surface and a film is stuck on the curing resin, and the curing resin is then cured. After that, a plating process is conducted on the first surface. The film and the curing resin are then peeled off.

Abstract translation: 公开了一种制造半导体器件的方法，其中在半导体衬底的第一表面侧上以稳定且低成本的方式形成镀层，同时防止电镀液被污染，并避免在第二层上沉积不均匀的镀层 表面 在半导体衬底的第一表面上形成电极，在第二表面上形成另一电极。 将固化树脂施加在第二表面上的电极上，并将膜粘附在固化树脂上，然后固化固化树脂。 之后，在第一面上进行电镀处理。 然后将膜和固化树脂剥离。

公开(公告)号：US5576986A

公开(公告)日：1996-11-19

申请号：US322491

申请日：1994-10-14

Applicant: Kazuo Matsuzaki ,  Yoshiyuki Sakai ,  Yuichi Urano ,  Hidekatsu Kuroda ,  Akira Amano

Inventor： Kazuo Matsuzaki ,  Yoshiyuki Sakai ,  Yuichi Urano ,  Hidekatsu Kuroda ,  Akira Amano

IPC: G11C11/30 ,  G11C13/02 ,  G11C11/00

CPC classification number: G11C13/0014 ,  B82Y10/00 ,  G11C13/02

Abstract: A highly reliable memory device with excellent heat resistance that can be used in any environment utilizes a chemical change to define a state transition. The memory device includes a micro vacuum tube structure having a recess portion formed on an upper face of a quartz substrate, a cold cathode having many comb-tooth like tips extending from the quartz substrate over to one side of the recess portion, a rectangular control electrode disposed on the side of the cold cathode at the bottom of the recess portion, an anode extending from the quartz substrate over to the other side of the recess portion and facing opposed to the cold cathode, and a sealing member for vacuum sealing a space inside the recess portion 11a. N.sub.2 and O.sub.2 gases are enclosed in a space under the pressure of 0.2 mmHg. By changing the control electrode voltage, energy of accelerated electrons is changed: NO is produced at the control voltage of 17 eV, NO2 at 23 eV and the product gases dissociate to N.sub.2 and O.sub.2 by glow discharge at the control voltage higher than 23 eV. The chemical reaction is used to indicate the storage of information.

Abstract translation: 可以在任何环境中使用的具有优异耐热性的高度可靠的存储器件利用化学变化来定义状态转变。 存储装置包括具有形成在石英基板的上表面上的凹部的微型真空管结构，具有从石英基板延伸到凹部的一侧的许多梳齿形尖端的冷阴极，矩形控制 设置在所述凹部的底部的所述冷阴极侧的电极，从所述石英衬底延伸到所述凹部的另一侧并与所述冷阴极相对的阳极，以及用于真空密封空间的密封构件 在凹部11a内。 N2和O2气体在0.2mmHg的压力下封闭在空间中。 通过改变控制电极电压，改变加速电子的能量：在17eV的控制电压，23eV下的NO2产生NO，并且在高于23eV的控制电压下，产物气体通过辉光放电解离成N2和O2。 化学反应用于指示信息的存储。