摘要:
A method of manufacture of an integrated circuit packaging system includes: providing a carrier; mounting an integrated circuit device having component connectors directly on the carrier; placing a restraint structure over the integrated circuit device for controlling warpage of the integrated circuit device during bonding of the component connectors to the carrier causing some of the component connectors to separate from the carrier; and bonding all of the component connectors to the carrier.
摘要:
A method of manufacture of an integrated circuit packaging system includes: providing a carrier; mounting an integrated circuit device having component connectors directly on the carrier; placing a restraint structure over the integrated circuit device for controlling warpage of the integrated circuit device during bonding of the component connectors to the carrier causing some of the component connectors to separate from the carrier; and bonding all of the component connectors to the carrier.
摘要:
A method of manufacture of an integrated circuit packaging system includes: providing an integrated circuit device having chip interconnects; applying an attachment layer directly on the integrated circuit device; attaching a device stiffener to the integrated circuit device with the attachment layer; attaching a chip carrier to the chip interconnects with the device stiffener attached to the integrated circuit device for controlling warpage of the integrated circuit device to prevent the warpage from causing some of the chip interconnects to separate from the chip carrier during attachment of the chip interconnects to the chip carrier; and applying an underfill between the chip carrier and the integrated circuit device for controlling connectivity of all the chip interconnects to the chip carrier.
摘要:
A method of manufacture of an integrated circuit packaging system includes: providing an interconnect structure having a structure bottom side, a structure top side, and a cavity, the structure bottom side electrically connected to the structure top side; mounting an integrated circuit entirely within the cavity, the integrated circuit having an active side coplanar with the structure top side; forming an encapsulation partially covering the interconnect structure and the integrated circuit, the encapsulation having an encapsulation top side coplanar with the structure top side and the active side; forming a top re-passivation layer over the structure top side and the encapsulation; and mounting a heat sink over the top re-passivation layer for removing heat from the active side.
摘要:
A method of manufacture of an integrated circuit packaging system includes: providing an integrated circuit device having chip interconnects; applying an attachment layer directly on the integrated circuit device; attaching a device stiffener to the integrated circuit device with the attachment layer; attaching a chip carrier to the chip interconnects with the device stiffener attached to the integrated circuit device for controlling warpage of the integrated circuit device to prevent the warpage from causing some of the chip interconnects to separate from the chip carrier during attachment of the chip interconnects to the chip carrier; and applying an underfill between the chip carrier and the integrated circuit device for controlling connectivity of all the chip interconnects to the chip carrier.
摘要:
A method of manufacture of an integrated circuit packaging system includes: providing an interconnect structure having a structure bottom side, a structure top side, and a cavity, the structure bottom side electrically connected to the structure top side; mounting an integrated circuit entirely within the cavity, the integrated circuit having an active side coplanar with the structure top side; forming an encapsulation partially covering the interconnect structure and the integrated circuit, the encapsulation having an encapsulation top side coplanar with the structure top side and the active side; forming a top re-passivation layer over the structure top side and the encapsulation; and mounting a heat sink over the top re-passivation layer for removing heat from the active side.
摘要:
A method of manufacture of an integrated circuit packaging system includes: providing a dummy-die paddle having a first inactive side facing up, a second inactive side facing down; forming an insulator in a single continuous structure around and in direct contact with the first inactive side; and mounting an integrated circuit over the dummy-die paddle and the insulator, the integrated circuit and the dummy-die paddle having the same coefficient of thermal expansion as the dummy-die paddle.
摘要:
A method of manufacture of an integrated circuit packaging system includes: providing a dummy-die paddle having a first inactive side facing up, a second inactive side facing down; forming an insulator in a single continuous structure around and in direct contact with the first inactive side; and mounting an integrated circuit over the dummy-die paddle and the insulator, the integrated circuit and the dummy-die paddle having the same coefficient of thermal expansion as the dummy-die paddle.
摘要:
A semiconductor device has a semiconductor die and conductive layer formed over a surface of the semiconductor die. A first channel can be formed in the semiconductor die. An encapsulant is deposited over the semiconductor die. A second channel can be formed in the encapsulant. A first insulating layer is formed over the semiconductor die and first conductive layer and into the first channel. The first insulating layer extends into the second channel. The first insulating layer has characteristics of tensile strength greater than 150 MPa, elongation between 35-150%, and thickness of 2-30 micrometers. A second insulating layer can be formed over the semiconductor die prior to forming the first insulating layer. An interconnect structure is formed over the semiconductor die and encapsulant. The interconnect structure is electrically connected to the first conductive layer. The first insulating layer provides stress relief during formation of the interconnect structure.
摘要:
A semiconductor device has a semiconductor die and conductive layer formed over a surface of the semiconductor die. A first channel can be formed in the semiconductor die. An encapsulant is deposited over the semiconductor die. A second channel can be formed in the encapsulant. A first insulating layer is formed over the semiconductor die and first conductive layer and into the first channel. The first insulating layer extends into the second channel. The first insulating layer has characteristics of tensile strength greater than 150 MPa, elongation between 35-150%, and thickness of 2-30 micrometers. A second insulating layer can be formed over the semiconductor die prior to forming the first insulating layer. An interconnect structure is formed over the semiconductor die and encapsulant. The interconnect structure is electrically connected to the first conductive layer. The first insulating layer provides stress relief during formation of the interconnect structure.