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51 条记录 (耗时 0.019 秒)

    Pitch reduction
    1.
    发明申请
    Pitch reduction 有权
    节距减少

    公开(公告)号：US20070264830A1

    公开(公告)日：2007-11-15

    申请号：US11432194

    申请日：2006-05-10

    申请人： Zhisong Huang ,  Jeffrey Marks ,  S.M. Sadjadi

    发明人： Zhisong Huang ,  Jeffrey Marks ,  S.M. Sadjadi

    IPC分类号： H01L21/311 ,  H01L21/306

    CPC分类号： H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/32139

    摘要： A method for providing features in an etch layer is provided. A sacrificial patterned layer with sacrificial features is provided over an etch layer. Conformal sidewalls are formed in the sacrificial features, comprising at least two cycles of a sidewall formation process, wherein each cycle comprises a sidewall deposition phase and a sidewall profile shaping phase. Parts of the sacrificial patterned layer between conformal sidewalls are removed leaving the conformal sidewalls with gaps between the conformal sidewalls where parts of the sacrificial patterned layer were selectively removed. Features are etched in the etch layer using the conformal sidewalls as an etch mask, wherein the features in the etch layer are etched through the gaps between the conformal sidewalls where parts of the sacrificial patterned layer were selectively removed.

    摘要翻译： 提供了一种用于在蚀刻层中提供特征的方法。 在蚀刻层上提供具有牺牲特征的牺牲图案层。 保形侧壁形成在牺牲特征中，包括侧壁形成工艺的至少两个循环，其中每个循环包括侧壁沉积阶段和侧壁轮廓成形阶段。 除去共形侧壁之间的牺牲图案层的部分，留下保形侧壁，其中保形侧壁之间的间隙被选择性地去除牺牲图案层的部分。 使用保形侧壁作为蚀刻掩模在蚀刻层中蚀刻特征，其中蚀刻层中的特征被蚀刻通过牺牲图案层的部分被选择性去除的共形侧壁之间的间隙。

    Reduction of etch mask feature critical dimensions
    2.
    发明申请
    Reduction of etch mask feature critical dimensions 审中-公开
    蚀刻掩模的减少具有关键尺寸

    公开(公告)号：US20060134917A1

    公开(公告)日：2006-06-22

    申请号：US11016455

    申请日：2004-12-16

    申请人： Zhisong Huang ,  S.M. Sadjadi ,  Jeffrey Marks

    发明人： Zhisong Huang ,  S.M. Sadjadi ,  Jeffrey Marks

    IPC分类号： H01L21/4757 ,  C23F1/00

    CPC分类号： H01L21/67069 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144

    摘要： A method for forming features in an etch layer in an etch stack with an etch mask over the etch layer, wherein the etch mask has etch mask features with sidewalls, where the etch mask features have a first critical dimension, is provided. A cyclical critical dimension reduction is performed to form deposition layer features with a second critical dimension, which is less than the first critical dimension. Each cycle, comprises a depositing phase for depositing a deposition layer over the exposed surfaces, including the vertical sidewalls, of the etch mask features and an etching phase for etching back the deposition layer leaving a selective deposition on the vertical sidewalls. Features are etched into the etch layer, wherein the etch layer features have a third critical dimension, which is less than the first critical dimension.

    摘要翻译： 一种用于在蚀刻层上的蚀刻层中形成蚀刻层中的特征的方法，其中蚀刻掩模具有带侧壁的蚀刻掩模特征，其中蚀刻掩模特征具有第一临界尺寸。 执行周期性临界尺寸降低以形成具有小于第一临界尺寸的第二临界尺寸的沉积层特征。 每个循环包括沉积相，用于在包括垂直侧壁的蚀刻掩模特征的暴露表面上沉积沉积层，以及用于蚀刻回沉积层的蚀刻阶段，在垂直侧壁上留下选择性沉积。 将特征蚀刻到蚀刻层中，其中蚀刻层特征具有小于第一临界尺寸的第三临界尺寸。

    Fast gas switching plasma processing apparatus
    3.
    发明申请
    Fast gas switching plasma processing apparatus 审中-公开
    快速气体开关等离子体处理装置

    公开(公告)号：US20070066038A1

    公开(公告)日：2007-03-22

    申请号：US11601293

    申请日：2006-11-17

    申请人： S.M. Sadjadi ,  Zhisong Huang ,  Jose Sam ,  Eric Lenz ,  Rajinder Dhindsa

    发明人： S.M. Sadjadi ,  Zhisong Huang ,  Jose Sam ,  Eric Lenz ,  Rajinder Dhindsa

    IPC分类号： H01L21/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/00 ,  H01L21/20

    CPC分类号： H01J37/32091 ,  H01J37/32155 ,  H01J37/3244 ,  H01J37/32449

    摘要： A plasma chamber with a plasma confinement zone with an electrode is provided. A gas distribution system for providing a first gas and a second gas is connected to the plasma chamber, wherein the gas distribution system can substantially replace one gas in the plasma zone with the other gas within a period of less than 1 s. A first frequency tuned RF power source for providing power to the electrode in a first frequency range is electrically connected to the at least one electrode wherein the first frequency tuned RF power source is able to minimize a reflected RF power. A second frequency tuned RF power source for providing power to the plasma chamber in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to minimize a reflected RF power.

    摘要翻译： 提供具有电极等离子体限制区的等离子体室。 用于提供第一气体和第二气体的气体分配系统连接到等离子体室，其中气体分配系统可以在小于1秒的时间内基本上替换等离子体区域中的一种气体与另一种气体。 用于在第一频率范围内向电极提供功率的第一频率调谐RF电源电连接到至少一个电极，其中第一频率调谐的RF功率源能够最小化反射的RF功率。 用于在第一频率范围之外的第二频率范围内为等离子体室提供功率的第二频率调谐RF电源，其中第二频率调谐的RF功率源能够使反射的RF功率最小化。

    Vertical profile fixing
    5.
    发明申请
    Vertical profile fixing 有权
    垂直型材固定

    公开(公告)号：US20070075038A1

    公开(公告)日：2007-04-05

    申请号：US11244870

    申请日：2005-10-05

    申请人： S.M. Sadjadi ,  Peter Cirigliano ,  Jisoo Kim ,  Zhisong Huang ,  Eric Hudson

    发明人： S.M. Sadjadi ,  Peter Cirigliano ,  Jisoo Kim ,  Zhisong Huang ,  Eric Hudson

    IPC分类号： B44C1/22 ,  C23F1/00 ,  H01L21/306 ,  C03C15/00

    CPC分类号： H01L21/0273 ,  H01L21/31144

    摘要： A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have irregular profiles along depths of the photoresist features. The irregular profiles along the depths of the photoresist features of the sidewalls of the photoresist features are corrected comprising at least one cycle, where each cycle comprises a sidewall deposition phase and a profile shaping phase. Feature is etched into the etch layer through the photoresist features. The mask is removed.

    摘要翻译： 提供了一种蚀刻蚀刻层中的特征的方法。 在具有侧壁的光致抗蚀剂特征的蚀刻层上形成图案化的光致抗蚀剂掩模，其中光致抗蚀剂特征的侧壁沿光致抗蚀剂特征的深度具有不规则的轮廓。 沿光致抗蚀剂特征的侧壁的光致抗蚀剂特征的深度的不规则轮廓被校正包括至少一个循环，其中每个循环包括侧壁沉积阶段和轮廓成形阶段。 通过光致抗蚀剂特征将特征蚀刻到蚀刻层中。 去除面具。

    Pitch reduction
    6.
    发明授权
    Pitch reduction 有权
    节距减少

    公开(公告)号：US07429533B2

    公开(公告)日：2008-09-30

    申请号：US11432194

    申请日：2006-05-10

    申请人： Zhisong Huang ,  Jeffrey Marks ,  S. M. Reza Sadjadi

    发明人： Zhisong Huang ,  Jeffrey Marks ,  S. M. Reza Sadjadi

    IPC分类号： H01L21/311 ,  H01L21/306

    CPC分类号： H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/32139

    摘要： A method for providing features in an etch layer is provided. A sacrificial patterned layer with sacrificial features is provided over an etch layer. Conformal sidewalls are formed in the sacrificial features, comprising at least two cycles of a sidewall formation process, wherein each cycle comprises a sidewall deposition phase and a sidewall profile shaping phase. Parts of the sacrificial patterned layer between conformal sidewalls are removed leaving the conformal sidewalls with gaps between the conformal sidewalls where parts of the sacrificial patterned layer were selectively removed. Features are etched in the etch layer using the conformal sidewalls as an etch mask, wherein the features in the etch layer are etched through the gaps between the conformal sidewalls where parts of the sacrificial patterned layer were selectively removed.

    摘要翻译： 提供了一种用于在蚀刻层中提供特征的方法。 在蚀刻层上提供具有牺牲特征的牺牲图案层。 保形侧壁形成在牺牲特征中，包括侧壁形成工艺的至少两个循环，其中每个循环包括侧壁沉积阶段和侧壁轮廓成形阶段。 除去共形侧壁之间的牺牲图案层的部分，留下保形侧壁，其中保形侧壁之间的间隙被选择性地去除牺牲图案层的部分。 使用保形侧壁作为蚀刻掩模在蚀刻层中蚀刻特征，其中蚀刻层中的特征被蚀刻通过牺牲图案层的部分被选择性去除的共形侧壁之间的间隙。

    A Recoilless Apparatus For Guns
    7.
    发明申请
    A Recoilless Apparatus For Guns 有权

    公开(公告)号：US20220120523A1

    公开(公告)日：2022-04-21

    申请号：US17100862

    申请日：2020-11-21

    申请人： Zhisong Huang

    发明人： Zhisong Huang

    IPC分类号： F41A1/10

    摘要： The invention relates to a recoilless apparatus for firing conventional cartridge-based ammunitions comprising a gun barrel and a compensating mass launch tube wherein a projectile is accelerated in one direction inside said gun barrel counterbalanced by a compensating mass accelerated in the opposite direction inside said launch tube thereby minimizing recoil and further providing means of automatic ammunition handling.

    ETCH WITH STRIATION CONTROL
    8.
    发明申请
    ETCH WITH STRIATION CONTROL 审中-公开
    ETCH与测度控制

    公开(公告)号：US20090121324A1

    公开(公告)日：2009-05-14

    申请号：US12349142

    申请日：2009-01-06

    申请人： S. M. Reza Sadjadi ,  Peter Cirigliano ,  Ji Soo Kim ,  Zhisong Huang ,  Eric A. Hudson

    发明人： S. M. Reza Sadjadi ,  Peter Cirigliano ,  Ji Soo Kim ,  Zhisong Huang ,  Eric A. Hudson

    IPC分类号： C23F1/08 ,  H01L29/00

    CPC分类号： H01L21/0273 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/76802 ,  Y10S438/942 ,  Y10S438/949

    摘要： A method for etching a feature in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have striations forming peaks and valleys. The striations of the sidewalls of the photoresist features are reduced. The reducing the striations comprises at least one cycle, wherein each cycle comprises etching back peaks formed by the striations of the sidewalls of the photoresist features and depositing on the sidewalls of the photoresist features. Features are etched into the etch layer through the photoresist features. The photoresist mask is removed.

    摘要翻译： 提供了蚀刻蚀刻层中的特征的方法。 在具有侧壁的光致抗蚀剂特征的蚀刻层上形成图案化的光致抗蚀剂掩模，其中光致抗蚀剂特征的侧壁具有形成峰和谷的条纹。 光致抗蚀剂特征的侧壁的条纹减小。 减小条纹包括至少一个周期，其中每个周期包括蚀刻由光致抗蚀剂特征的侧壁的条纹形成的峰，并沉积在光致抗蚀剂特征的侧壁上。 通过光致抗蚀剂特征将特征蚀刻到蚀刻层中。 去除光致抗蚀剂掩模。