公开(公告)号：US12046549B2

公开(公告)日：2024-07-23

申请号：US17765756

申请日：2020-10-21

申请人： ROHM CO., LTD.

发明人： Maiko Hatano

IPC分类号： H01L23/498 ,  H01L23/00 ,  H01L23/14 ,  H01L25/07

CPC分类号： H01L23/49844 ,  H01L23/145 ,  H01L23/49811 ,  H01L23/49822 ,  H01L23/49833 ,  H01L23/49861 ,  H01L23/49866 ,  H01L24/32 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L25/072 ,  H01L24/16 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/4001 ,  H01L2224/40095 ,  H01L2224/40177 ,  H01L2224/40225 ,  H01L2224/48225 ,  H01L2224/73207 ,  H01L2224/73221 ,  H01L2224/73253 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2924/10272 ,  H01L2924/13091 ,  H01L2924/1815 ,  H01L2924/182 ,  H01L2924/3511

摘要： A semiconductor device includes an insulating substrate, a first and a second obverse-surface metal layers disposed on an obverse surface of the insulating substrate, a first and a second reverse-surface metal layers disposed on a reverse surface of the insulating substrate, a first conductive layer and a first semiconductor element disposed on the first obverse-surface metal layer, and a second conductive layer and a second semiconductor element disposed on the second obverse-surface metal layer. Each of the first conductive layer and the second conductive layer has an anisotropic coefficient of linear expansion and is arranged such that the direction in which the coefficient of linear expansion is relatively large is along a predetermined direction perpendicular to the thickness direction of the insulating substrate. The first and second reverse-surface metal layers are smaller than the first and second obverse-surface metal layers in dimension in the predetermined direction.

公开(公告)号：US20240096843A1

公开(公告)日：2024-03-21

申请号：US18116711

申请日：2023-03-02

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： Kyo TANABIKI

IPC分类号： H01L23/00

CPC分类号： H01L24/37 ,  H01L24/40 ,  H01L2224/37013 ,  H01L2224/40177 ,  H01L2224/40491

摘要： According to one embodiment, a semiconductor device includes: a chip; a first electrode provided on the chip; a first connector provided above the first electrode, extending in a first direction, and provided with a joint portion to be joined to the first electrode, on an end portion in the first direction of the first connector; and a joint member for use in joint between the first electrode and the joint portion. The joint portion is provided with a notch portion on at least one end portion in the first direction of an upper surface of the joint portion. The joint member is in contact with the first electrode, a lower surface of the joint portion facing the first electrode, and at least, part of the notch portion.

公开(公告)号：US20170170143A1

公开(公告)日：2017-06-15

申请号：US15378993

申请日：2016-12-14

申请人： Infineon Technologies AG

发明人： Gopalakrishnan Trichy Rengarajan ,  Christian Stahlhut

IPC分类号： H01L23/00 ,  H01L21/48

CPC分类号： H01L24/83 ,  H01L21/4825 ,  H01L21/4853 ,  H01L23/3735 ,  H01L23/488 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/92 ,  H01L24/94 ,  H01L2224/05624 ,  H01L2224/06131 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/2747 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29163 ,  H01L2224/29169 ,  H01L2224/29173 ,  H01L2224/29176 ,  H01L2224/29178 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/40137 ,  H01L2224/40177 ,  H01L2224/40195 ,  H01L2224/40245 ,  H01L2224/45014 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48137 ,  H01L2224/48177 ,  H01L2224/48195 ,  H01L2224/48227 ,  H01L2224/48245 ,  H01L2224/48472 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/75301 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83469 ,  H01L2224/83473 ,  H01L2224/83476 ,  H01L2224/83478 ,  H01L2224/83895 ,  H01L2224/85181 ,  H01L2224/92246 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/27 ,  H01L2924/01076 ,  H01L2224/45099 ,  H01L2224/37099 ,  H01L2224/84 ,  H01L2224/32225 ,  H01L2224/48247

摘要： A semiconductor chip includes a semiconductor body having a lower side with a lower chip metallization applied thereto. A first contact metallization layer is produced on the lower chip metallization. A second contact metallization layer is produced on a metal surface of a substrate. The semiconductor chip and the substrate are pressed onto one another for a pressing time so that the first and second contact metallization layers bear directly and extensively on one another. During the pressing time, the first contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the first contact metallization layer. The second contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the second contact metallization layer during the pressing time. After the pressing together, the first and second contact metallization layers have a total thickness less than 1000 nm.

公开(公告)号：US11908780B2

公开(公告)日：2024-02-20

申请号：US17518554

申请日：2021-11-03

申请人： Texas Instruments Incorporated

发明人： Jonathan Almeria Noquil ,  Satyendra Singh Chauhan ,  Lance Cole Wright ,  Osvaldo Jorge Lopez

IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L25/07 ,  H01L25/00 ,  H01L25/16 ,  H01L21/56 ,  H01L23/31

CPC分类号： H01L23/49575 ,  H01L23/49513 ,  H01L23/49562 ,  H01L24/32 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L24/92 ,  H01L25/074 ,  H01L25/16 ,  H01L25/50 ,  H01L21/561 ,  H01L21/565 ,  H01L23/3121 ,  H01L24/97 ,  H01L2224/32245 ,  H01L2224/40145 ,  H01L2224/40177 ,  H01L2224/4118 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/83815 ,  H01L2224/84815 ,  H01L2224/92246 ,  H01L2924/13091 ,  H01L2924/1426 ,  H01L2924/2064

摘要： A semiconductor package includes a leadframe including a die pad and a plurality of lead terminals. A vertical semiconductor device is attached on a first side by a die attach material to the die pad. A first clip is on the first vertical device that is solder connected to a terminal of the first vertical device on a second side opposite to the first side providing a first solder bonded interface, wherein the first clip is connected to at least a first of the lead terminals. The first solder bonded interface includes a first protruding surface standoff therein that extends from a surface on the second side of the first vertical device to physically contact the first clip.

公开(公告)号：US20230245994A1

公开(公告)日：2023-08-03

申请号：US18102147

申请日：2023-01-27

申请人： STMicroelectronics S.r.l.

发明人： Mauro MAZZOLA ,  Fabio MARCHISI

IPC分类号： H01L23/00 ,  H01L23/495

CPC分类号： H01L24/40 ,  H01L23/49513 ,  H01L24/32 ,  H01L24/73 ,  H01L23/4952 ,  H01L24/83 ,  H01L24/84 ,  H01L24/92 ,  H01L2224/40177 ,  H01L2224/32245 ,  H01L2224/73263 ,  H01L2224/40505 ,  H01L2224/83 ,  H01L2224/84801 ,  H01L2224/92246

摘要： A semiconductor device semiconductor chip mounted to a leadframe that includes an electrically conductive pad. An electrically conductive clip is arranged in a bridge-like position between the semiconductor chip and the electrically conductive pad. The electrically conductive clip is soldered to the semiconductor chip and to the electrically conductive pad via soldering material applied at coupling surfaces facing towards the semiconductor chip and the electrically conductive pad. The device further includes a pair of complementary positioning formations formed by a cavity in the electrically conductive clip and a protrusion (such as a stud bump or a stack of stud bumps) formed in the electrically conductive pad. The complementary positioning formations are mutually engaged to retain the electrically conductive clip in the bridge-like position to avoid displacement during soldering.

公开(公告)号：US09978711B2

公开(公告)日：2018-05-22

申请号：US15378993

申请日：2016-12-14

申请人： Infineon Technologies AG

发明人： Gopalakrishnan Trichy Rengarajan ,  Christian Stahlhut

IPC分类号： H01L23/00 ,  H01L21/48

CPC分类号： H01L24/83 ,  H01L21/4825 ,  H01L21/4853 ,  H01L23/3735 ,  H01L23/488 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/92 ,  H01L24/94 ,  H01L2224/05624 ,  H01L2224/06131 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/2747 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29163 ,  H01L2224/29169 ,  H01L2224/29173 ,  H01L2224/29176 ,  H01L2224/29178 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/40137 ,  H01L2224/40177 ,  H01L2224/40195 ,  H01L2224/40245 ,  H01L2224/45014 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48137 ,  H01L2224/48177 ,  H01L2224/48195 ,  H01L2224/48227 ,  H01L2224/48245 ,  H01L2224/48472 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/75301 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83469 ,  H01L2224/83473 ,  H01L2224/83476 ,  H01L2224/83478 ,  H01L2224/83895 ,  H01L2224/85181 ,  H01L2224/92246 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/27 ,  H01L2924/01076 ,  H01L2224/45099 ,  H01L2224/37099 ,  H01L2224/84 ,  H01L2224/32225 ,  H01L2224/48247

摘要： A semiconductor chip includes a semiconductor body having a lower side with a lower chip metallization applied thereto. A first contact metallization layer is produced on the lower chip metallization. A second contact metallization layer is produced on a metal surface of a substrate. The semiconductor chip and the substrate are pressed onto one another for a pressing time so that the first and second contact metallization layers bear directly and extensively on one another. During the pressing time, the first contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the first contact metallization layer. The second contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the second contact metallization layer during the pressing time. After the pressing together, the first and second contact metallization layers have a total thickness less than 1000 nm.