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公开(公告)号：US09978711B2
公开(公告)日：2018-05-22
申请号：US15378993
申请日：2016-12-14
CPC分类号： H01L24/83 , H01L21/4825 , H01L21/4853 , H01L23/3735 , H01L23/488 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/92 , H01L24/94 , H01L2224/05624 , H01L2224/06131 , H01L2224/2745 , H01L2224/27452 , H01L2224/27462 , H01L2224/27464 , H01L2224/2747 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29163 , H01L2224/29169 , H01L2224/29173 , H01L2224/29176 , H01L2224/29178 , H01L2224/32227 , H01L2224/32245 , H01L2224/40137 , H01L2224/40177 , H01L2224/40195 , H01L2224/40245 , H01L2224/45014 , H01L2224/48091 , H01L2224/48105 , H01L2224/48137 , H01L2224/48177 , H01L2224/48195 , H01L2224/48227 , H01L2224/48245 , H01L2224/48472 , H01L2224/73263 , H01L2224/73265 , H01L2224/75301 , H01L2224/83193 , H01L2224/83203 , H01L2224/83439 , H01L2224/83444 , H01L2224/83469 , H01L2224/83473 , H01L2224/83476 , H01L2224/83478 , H01L2224/83895 , H01L2224/85181 , H01L2224/92246 , H01L2224/92247 , H01L2224/94 , H01L2924/00014 , H01L2924/00012 , H01L2224/27 , H01L2924/01076 , H01L2224/45099 , H01L2224/37099 , H01L2224/84 , H01L2224/32225 , H01L2224/48247
摘要： A semiconductor chip includes a semiconductor body having a lower side with a lower chip metallization applied thereto. A first contact metallization layer is produced on the lower chip metallization. A second contact metallization layer is produced on a metal surface of a substrate. The semiconductor chip and the substrate are pressed onto one another for a pressing time so that the first and second contact metallization layers bear directly and extensively on one another. During the pressing time, the first contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the first contact metallization layer. The second contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the second contact metallization layer during the pressing time. After the pressing together, the first and second contact metallization layers have a total thickness less than 1000 nm.
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公开(公告)号：US20170170143A1
公开(公告)日：2017-06-15
申请号：US15378993
申请日：2016-12-14
CPC分类号： H01L24/83 , H01L21/4825 , H01L21/4853 , H01L23/3735 , H01L23/488 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/92 , H01L24/94 , H01L2224/05624 , H01L2224/06131 , H01L2224/2745 , H01L2224/27452 , H01L2224/27462 , H01L2224/27464 , H01L2224/2747 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29163 , H01L2224/29169 , H01L2224/29173 , H01L2224/29176 , H01L2224/29178 , H01L2224/32227 , H01L2224/32245 , H01L2224/40137 , H01L2224/40177 , H01L2224/40195 , H01L2224/40245 , H01L2224/45014 , H01L2224/48091 , H01L2224/48105 , H01L2224/48137 , H01L2224/48177 , H01L2224/48195 , H01L2224/48227 , H01L2224/48245 , H01L2224/48472 , H01L2224/73263 , H01L2224/73265 , H01L2224/75301 , H01L2224/83193 , H01L2224/83203 , H01L2224/83439 , H01L2224/83444 , H01L2224/83469 , H01L2224/83473 , H01L2224/83476 , H01L2224/83478 , H01L2224/83895 , H01L2224/85181 , H01L2224/92246 , H01L2224/92247 , H01L2224/94 , H01L2924/00014 , H01L2924/00012 , H01L2224/27 , H01L2924/01076 , H01L2224/45099 , H01L2224/37099 , H01L2224/84 , H01L2224/32225 , H01L2224/48247
摘要： A semiconductor chip includes a semiconductor body having a lower side with a lower chip metallization applied thereto. A first contact metallization layer is produced on the lower chip metallization. A second contact metallization layer is produced on a metal surface of a substrate. The semiconductor chip and the substrate are pressed onto one another for a pressing time so that the first and second contact metallization layers bear directly and extensively on one another. During the pressing time, the first contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the first contact metallization layer. The second contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the second contact metallization layer during the pressing time. After the pressing together, the first and second contact metallization layers have a total thickness less than 1000 nm.
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公开(公告)号：US20180269834A1
公开(公告)日：2018-09-20
申请号：US15914606
申请日：2018-03-07
发明人： Hisahiro ITO , Tetsuya OTSUKI , Mitsuaki SAWADA
CPC分类号： H03B5/32 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/32014 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48111 , H01L2224/48195 , H01L2224/48227 , H01L2224/48245 , H01L2224/49171 , H01L2224/73265 , H01L2224/83424 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83455 , H01L2224/83464 , H01L2224/83466 , H01L2224/83469 , H01L2224/83478 , H01L2224/83484 , H01L2924/19107 , H01L2924/3025 , H03B1/02 , H03H9/0514 , H03H9/0542 , H03H9/10 , H03H9/1021 , H03H9/19 , H05K2203/049 , H01L2924/00014 , H01L2924/00
摘要： A vibrator device has a base that has a first terminal, a circuit element that is disposed on the base and has a second terminal, a vibrator that includes a vibrator element and a vibrator element package, and is positioned between the first terminal and the second terminal in plan view of the base, a wiring unit that is disposed on the vibrator, a first wire that electrically connects the first terminal and the wiring unit together, and a second wire that electrically connects the wiring unit and the second terminal together.
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公开(公告)号：US20170271295A1
公开(公告)日：2017-09-21
申请号：US15514524
申请日：2015-09-17
发明人： Andreas Ploessl
IPC分类号： H01L23/00 , H01L23/498 , H01L23/15
CPC分类号： H01L24/29 , H01L23/15 , H01L23/49513 , H01L23/49866 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/15 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/81 , H01L24/83 , H01L33/40 , H01L33/62 , H01L2224/0345 , H01L2224/0401 , H01L2224/04026 , H01L2224/05082 , H01L2224/05124 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05669 , H01L2224/05673 , H01L2224/05678 , H01L2224/1132 , H01L2224/11334 , H01L2224/1141 , H01L2224/11436 , H01L2224/13294 , H01L2224/13339 , H01L2224/13347 , H01L2224/16227 , H01L2224/16245 , H01L2224/2732 , H01L2224/27334 , H01L2224/2741 , H01L2224/27436 , H01L2224/29083 , H01L2224/29084 , H01L2224/29124 , H01L2224/29139 , H01L2224/29147 , H01L2224/29155 , H01L2224/29166 , H01L2224/29169 , H01L2224/29171 , H01L2224/29173 , H01L2224/29178 , H01L2224/29294 , H01L2224/29339 , H01L2224/29347 , H01L2224/32227 , H01L2224/32245 , H01L2224/32503 , H01L2224/73265 , H01L2224/81191 , H01L2224/81192 , H01L2224/81193 , H01L2224/81201 , H01L2224/81203 , H01L2224/81205 , H01L2224/81207 , H01L2224/81208 , H01L2224/81469 , H01L2224/81473 , H01L2224/81478 , H01L2224/8184 , H01L2224/83191 , H01L2224/83192 , H01L2224/83193 , H01L2224/83201 , H01L2224/83203 , H01L2224/83205 , H01L2224/83207 , H01L2224/83208 , H01L2224/83359 , H01L2224/83439 , H01L2224/83447 , H01L2224/83469 , H01L2224/83473 , H01L2224/83478 , H01L2224/8384 , H01L2924/00015 , H01L2924/1033 , H01L2924/10349 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01L2924/13014 , H01L2924/13064 , H01L2924/15724 , H01L2924/00014 , H01L2224/05644 , H01L2224/05639 , H01L2924/00012
摘要： An electronic device and a method for producing an electronic device are disclosed. In an embodiment the electronic device includes a first component and a second component and a sinter layer connecting the first component to the second component, the sinter layer comprising a first metal, wherein at least one of the components comprises at least one contact layer which is arranged in direct contact with the sinter layer, which comprises a second metal different from the first metal and which is free of gold.
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