公开(公告)号：US08840811B2

公开(公告)日：2014-09-23

申请号：US12768778

申请日：2010-04-28

申请人： Yuusuke Yasuda ,  Toshiaki Morita ,  Eiichi Ide ,  Teiichi Inada

发明人： Yuusuke Yasuda ,  Toshiaki Morita ,  Eiichi Ide ,  Teiichi Inada

IPC分类号： H01B1/00 ,  H01B1/12 ,  H01L23/15 ,  C22C1/05 ,  H01L23/14 ,  H01L23/373 ,  H01L23/488 ,  H01L23/13 ,  H01L23/498 ,  B22F1/00 ,  H01L23/492 ,  H01B1/22 ,  H01L25/07 ,  H01L23/34 ,  B23K20/00 ,  B23K28/00 ,  B05D5/12 ,  H01L23/24 ,  H01L21/56 ,  H01L23/10 ,  H01L23/00 ,  H01L23/495 ,  H01L23/31 ,  H01L23/049

CPC分类号： B22F1/0074 ,  C22C1/05 ,  H01B1/22 ,  H01L21/565 ,  H01L23/049 ,  H01L23/10 ,  H01L23/13 ,  H01L23/142 ,  H01L23/15 ,  H01L23/24 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/34 ,  H01L23/3735 ,  H01L23/488 ,  H01L23/492 ,  H01L23/49513 ,  H01L23/49562 ,  H01L23/498 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/05147 ,  H01L2224/05639 ,  H01L2224/05655 ,  H01L2224/27334 ,  H01L2224/29005 ,  H01L2224/2901 ,  H01L2224/29078 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29138 ,  H01L2224/29139 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/2916 ,  H01L2224/29163 ,  H01L2224/29164 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29173 ,  H01L2224/29176 ,  H01L2224/29178 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/29309 ,  H01L2224/29311 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29338 ,  H01L2224/29339 ,  H01L2224/29355 ,  H01L2224/29357 ,  H01L2224/2936 ,  H01L2224/29363 ,  H01L2224/29364 ,  H01L2224/29366 ,  H01L2224/29369 ,  H01L2224/29371 ,  H01L2224/29373 ,  H01L2224/29376 ,  H01L2224/29378 ,  H01L2224/29381 ,  H01L2224/29384 ,  H01L2224/29387 ,  H01L2224/29893 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32505 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48739 ,  H01L2224/48755 ,  H01L2224/48839 ,  H01L2224/48855 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83065 ,  H01L2224/83075 ,  H01L2224/832 ,  H01L2224/8384 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3511 ,  H01L2924/0541 ,  H01L2924/0501 ,  H01L2924/00014 ,  H01L2924/01001 ,  H01L2924/01018 ,  H01L2924/01007 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/2076 ,  H01L2924/01202 ,  H01L2224/83205

摘要： The present invention provides a bonding material and a method of bonding for metal bonding at a bonding interface capable of a higher bonding strength at a lower temperature without application of pressure, compared to a bonding material of metal particles having an average particle size of not greater than 100 nm. An electrically conductive bonding material including (A) silver particles, (B) silver oxide, and (C) a dispersant including organic material containing not more than 30 carbon atoms as essential components, wherein a total amount of (A) the silver powder, (B) the silver oxide powder, and (C) the dispersant including an organic material containing not more than 30 carbon atoms is in a range of 99.0% to 100% by weight, is provided. In other words, no resin binder is contained.

摘要翻译： 本发明提供一种接合材料和在不施加压力的情况下在较低温度下能够具有较高接合强度的接合界面处的金属接合方法，与平均粒径不大的金属颗粒的接合材料相比 超过100nm。 一种导电性接合材料，其包含（A）银颗粒，（B）氧化银，和（C）包含不超过30个碳原子的有机材料作为必要组分的分散剂，其中（A）银粉末， （B）氧化银粉末，（C）含有不超过30个碳原子的有机材料的分散剂的含量为99.0〜100重量％。 换句话说，不含树脂粘合剂。

公开(公告)号：US20170271295A1

公开(公告)日：2017-09-21

申请号：US15514524

申请日：2015-09-17

申请人： OSRAM Oplo Semiconductors GmbH

发明人： Andreas Ploessl

IPC分类号： H01L23/00 ,  H01L23/498 ,  H01L23/15

CPC分类号： H01L24/29 ,  H01L23/15 ,  H01L23/49513 ,  H01L23/49866 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/15 ,  H01L24/16 ,  H01L24/27 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L33/40 ,  H01L33/62 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/05678 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1141 ,  H01L2224/11436 ,  H01L2224/13294 ,  H01L2224/13339 ,  H01L2224/13347 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/2732 ,  H01L2224/27334 ,  H01L2224/2741 ,  H01L2224/27436 ,  H01L2224/29083 ,  H01L2224/29084 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29173 ,  H01L2224/29178 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81207 ,  H01L2224/81208 ,  H01L2224/81469 ,  H01L2224/81473 ,  H01L2224/81478 ,  H01L2224/8184 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83207 ,  H01L2224/83208 ,  H01L2224/83359 ,  H01L2224/83439 ,  H01L2224/83447 ,  H01L2224/83469 ,  H01L2224/83473 ,  H01L2224/83478 ,  H01L2224/8384 ,  H01L2924/00015 ,  H01L2924/1033 ,  H01L2924/10349 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/13014 ,  H01L2924/13064 ,  H01L2924/15724 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2224/05639 ,  H01L2924/00012

摘要： An electronic device and a method for producing an electronic device are disclosed. In an embodiment the electronic device includes a first component and a second component and a sinter layer connecting the first component to the second component, the sinter layer comprising a first metal, wherein at least one of the components comprises at least one contact layer which is arranged in direct contact with the sinter layer, which comprises a second metal different from the first metal and which is free of gold.

公开(公告)号：US09978711B2

公开(公告)日：2018-05-22

申请号：US15378993

申请日：2016-12-14

申请人： Infineon Technologies AG

发明人： Gopalakrishnan Trichy Rengarajan ,  Christian Stahlhut

IPC分类号： H01L23/00 ,  H01L21/48

CPC分类号： H01L24/83 ,  H01L21/4825 ,  H01L21/4853 ,  H01L23/3735 ,  H01L23/488 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/92 ,  H01L24/94 ,  H01L2224/05624 ,  H01L2224/06131 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/2747 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29163 ,  H01L2224/29169 ,  H01L2224/29173 ,  H01L2224/29176 ,  H01L2224/29178 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/40137 ,  H01L2224/40177 ,  H01L2224/40195 ,  H01L2224/40245 ,  H01L2224/45014 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48137 ,  H01L2224/48177 ,  H01L2224/48195 ,  H01L2224/48227 ,  H01L2224/48245 ,  H01L2224/48472 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/75301 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83469 ,  H01L2224/83473 ,  H01L2224/83476 ,  H01L2224/83478 ,  H01L2224/83895 ,  H01L2224/85181 ,  H01L2224/92246 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/27 ,  H01L2924/01076 ,  H01L2224/45099 ,  H01L2224/37099 ,  H01L2224/84 ,  H01L2224/32225 ,  H01L2224/48247

摘要： A semiconductor chip includes a semiconductor body having a lower side with a lower chip metallization applied thereto. A first contact metallization layer is produced on the lower chip metallization. A second contact metallization layer is produced on a metal surface of a substrate. The semiconductor chip and the substrate are pressed onto one another for a pressing time so that the first and second contact metallization layers bear directly and extensively on one another. During the pressing time, the first contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the first contact metallization layer. The second contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the second contact metallization layer during the pressing time. After the pressing together, the first and second contact metallization layers have a total thickness less than 1000 nm.

公开(公告)号：US09875983B2

公开(公告)日：2018-01-23

申请号：US15142263

申请日：2016-04-29

申请人： Indium Corporation

发明人： Sihai Chen ,  Ning-Cheng Lee

IPC分类号： H01L29/40 ,  H01L23/00

CPC分类号： H01L24/29 ,  H01L24/27 ,  H01L24/83 ,  H01L2224/27013 ,  H01L2224/2732 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29164 ,  H01L2224/29169 ,  H01L2224/29173 ,  H01L2224/29176 ,  H01L2224/29178 ,  H01L2224/29563 ,  H01L2224/8302 ,  H01L2224/83095 ,  H01L2224/8384

摘要： A sintering paste includes solvent and nanomicrocrystallite (NMC) particles. Each NMC particle is a single crystallite having at least one dimension in the range of 1 nm to 100 nm and at least one dimension in the range of 0.1 μm to 1000 μm. The sintering paste may be used in a pressureless sintering process to form a low porosity joint having high bond strength, high electrical and thermal conductivity, and high thermal stability.

公开(公告)号：US20170317046A1

公开(公告)日：2017-11-02

申请号：US15142263

申请日：2016-04-29

申请人： Indium Corporation

发明人： Sihai Chen ,  Ning-Cheng Lee

IPC分类号： H01L23/00

CPC分类号： H01L24/29 ,  H01L24/27 ,  H01L24/83 ,  H01L2224/27013 ,  H01L2224/2732 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29164 ,  H01L2224/29169 ,  H01L2224/29173 ,  H01L2224/29176 ,  H01L2224/29178 ,  H01L2224/29563 ,  H01L2224/8302 ,  H01L2224/83095 ,  H01L2224/8384

摘要： A sintering paste includes solvent and nanomicrocrystallite (NMC) particles. Each NMC particle is a single crystallite having at least one dimension in the range of 1 nm to 100 nm and at least one dimension in the range of 0.1 μm to 1000 μm. The sintering paste may be used in a pressureless sintering process to form a low porosity joint having high bond strength, high electrical and thermal conductivity, and high thermal stability.

公开(公告)号：US20170170143A1

公开(公告)日：2017-06-15

申请号：US15378993

申请日：2016-12-14

申请人： Infineon Technologies AG

发明人： Gopalakrishnan Trichy Rengarajan ,  Christian Stahlhut

IPC分类号： H01L23/00 ,  H01L21/48

CPC分类号： H01L24/83 ,  H01L21/4825 ,  H01L21/4853 ,  H01L23/3735 ,  H01L23/488 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/92 ,  H01L24/94 ,  H01L2224/05624 ,  H01L2224/06131 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/2747 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29163 ,  H01L2224/29169 ,  H01L2224/29173 ,  H01L2224/29176 ,  H01L2224/29178 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/40137 ,  H01L2224/40177 ,  H01L2224/40195 ,  H01L2224/40245 ,  H01L2224/45014 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48137 ,  H01L2224/48177 ,  H01L2224/48195 ,  H01L2224/48227 ,  H01L2224/48245 ,  H01L2224/48472 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/75301 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83469 ,  H01L2224/83473 ,  H01L2224/83476 ,  H01L2224/83478 ,  H01L2224/83895 ,  H01L2224/85181 ,  H01L2224/92246 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/27 ,  H01L2924/01076 ,  H01L2224/45099 ,  H01L2224/37099 ,  H01L2224/84 ,  H01L2224/32225 ,  H01L2224/48247

摘要： A semiconductor chip includes a semiconductor body having a lower side with a lower chip metallization applied thereto. A first contact metallization layer is produced on the lower chip metallization. A second contact metallization layer is produced on a metal surface of a substrate. The semiconductor chip and the substrate are pressed onto one another for a pressing time so that the first and second contact metallization layers bear directly and extensively on one another. During the pressing time, the first contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the first contact metallization layer. The second contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the second contact metallization layer during the pressing time. After the pressing together, the first and second contact metallization layers have a total thickness less than 1000 nm.

公开(公告)号：US08884470B2

公开(公告)日：2014-11-11

申请号：US13229973

申请日：2011-09-12

申请人： Tatsuji Nishijima

发明人： Tatsuji Nishijima

IPC分类号： H01F27/42

CPC分类号： H01Q1/2225 ,  H01L23/3107 ,  H01L23/552 ,  H01L24/29 ,  H01L27/1225 ,  H01L2224/291 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/2916 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/2917 ,  H01L2224/29173 ,  H01L2224/29178 ,  H01L2224/2918 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/29187 ,  H01L2224/29188 ,  H01L2224/2919 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/00

摘要： An object is to provide a semiconductor device capable of preventing an alternating leakage current from flowing into a voltage detection circuit. The semiconductor device includes an antenna circuit, a resonance frequency regulating circuit, a voltage detection circuit, and a first capacitor. The resonance frequency regulating circuit includes a second capacitor including one terminal electrically connected to a first terminal of the antenna circuit; and a transistor including a first terminal electrically connected to the other terminal of the second capacitor, a second terminal electrically connected to a second terminal of the antenna circuit, and a gate electrically connected to the first capacitor and the voltage detection circuit.

摘要翻译： 目的在于提供能够防止交流漏电流流入电压检测电路的半导体装置。 半导体器件包括天线电路，谐振频率调节电路，电压检测电路和第一电容器。 谐振频率调节电路包括：第二电容器，包括电连接到天线电路的第一端子的一个端子; 以及晶体管，其包括电连接到所述第二电容器的另一端子的第一端子，电连接到所述天线电路的第二端子的第二端子和电连接到所述第一电容器和所述电压检测电路的栅极。

公开(公告)号：US20120062430A1

公开(公告)日：2012-03-15

申请号：US13229973

申请日：2011-09-12

申请人： Tatsuji Nishijima

发明人： Tatsuji Nishijima

IPC分类号： H01Q23/00

CPC分类号： H01Q1/2225 ,  H01L23/3107 ,  H01L23/552 ,  H01L24/29 ,  H01L27/1225 ,  H01L2224/291 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/2916 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/2917 ,  H01L2224/29173 ,  H01L2224/29178 ,  H01L2224/2918 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/29187 ,  H01L2224/29188 ,  H01L2224/2919 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/00

摘要： An object is to provide a semiconductor device capable of preventing an alternating leakage current from flowing into a voltage detection circuit. The semiconductor device includes an antenna circuit, a resonance frequency regulating circuit, a voltage detection circuit, and a first capacitor. The resonance frequency regulating circuit includes a second capacitor including one terminal electrically connected to a first terminal of the antenna circuit; and a transistor including a first terminal electrically connected to the other terminal of the second capacitor, a second terminal electrically connected to a second terminal of the antenna circuit, and a gate electrically connected to the first capacitor and the voltage detection circuit.

摘要翻译： 目的在于提供能够防止交流漏电流流入电压检测电路的半导体装置。 半导体器件包括天线电路，谐振频率调节电路，电压检测电路和第一电容器。 谐振频率调节电路包括：第二电容器，包括电连接到天线电路的第一端子的一个端子; 以及晶体管，其包括电连接到所述第二电容器的另一端子的第一端子，电连接到所述天线电路的第二端子的第二端子和电连接到所述第一电容器和所述电压检测电路的栅极。

公开(公告)号：US20100270515A1

公开(公告)日：2010-10-28

申请号：US12768778

申请日：2010-04-28

申请人： Yuusuke YASUDA ,  Toshiaki Morita ,  Eiichi Ide ,  Teiichi Inada

发明人： Yuusuke YASUDA ,  Toshiaki Morita ,  Eiichi Ide ,  Teiichi Inada

IPC分类号： H01B1/02 ,  H01B1/12 ,  B23K20/00

CPC分类号： B22F1/0074 ,  C22C1/05 ,  H01B1/22 ,  H01L21/565 ,  H01L23/049 ,  H01L23/10 ,  H01L23/13 ,  H01L23/142 ,  H01L23/15 ,  H01L23/24 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/34 ,  H01L23/3735 ,  H01L23/488 ,  H01L23/492 ,  H01L23/49513 ,  H01L23/49562 ,  H01L23/498 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/05147 ,  H01L2224/05639 ,  H01L2224/05655 ,  H01L2224/27334 ,  H01L2224/29005 ,  H01L2224/2901 ,  H01L2224/29078 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29138 ,  H01L2224/29139 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/2916 ,  H01L2224/29163 ,  H01L2224/29164 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29173 ,  H01L2224/29176 ,  H01L2224/29178 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/29309 ,  H01L2224/29311 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29338 ,  H01L2224/29339 ,  H01L2224/29355 ,  H01L2224/29357 ,  H01L2224/2936 ,  H01L2224/29363 ,  H01L2224/29364 ,  H01L2224/29366 ,  H01L2224/29369 ,  H01L2224/29371 ,  H01L2224/29373 ,  H01L2224/29376 ,  H01L2224/29378 ,  H01L2224/29381 ,  H01L2224/29384 ,  H01L2224/29387 ,  H01L2224/29893 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32505 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48739 ,  H01L2224/48755 ,  H01L2224/48839 ,  H01L2224/48855 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83065 ,  H01L2224/83075 ,  H01L2224/832 ,  H01L2224/8384 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3511 ,  H01L2924/0541 ,  H01L2924/0501 ,  H01L2924/00014 ,  H01L2924/01001 ,  H01L2924/01018 ,  H01L2924/01007 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/2076 ,  H01L2924/01202 ,  H01L2224/83205

摘要： The present invention provides a bonding material and a method of bonding for metal bonding at a bonding interface capable of a higher bonding strength at a lower temperature without application of pressure, compared to a bonding material of metal particles having an average particle size of not greater than 100 nm. An electrically conductive bonding material including (A) silver particles, (B) silver oxide, and (C) a dispersant including organic material containing not more than 30 carbon atoms as essential components, wherein a total amount of (A) the silver powder, (B) the silver oxide powder, and (C) the dispersant including an organic material containing not more than 30 carbon atoms is in a range of 99.0% to 100% by weight, is provided. In other words, no resin binder is contained.

摘要翻译： 本发明提供一种接合材料和在不施加压力的情况下在较低温度下能够具有较高接合强度的接合界面处的金属接合方法，与平均粒径不大的金属颗粒的接合材料相比 超过100nm。 一种导电性接合材料，其包含（A）银颗粒，（B）氧化银，和（C）包含不超过30个碳原子的有机材料作为必要组分的分散剂，其中（A）银粉末， （B）氧化银粉末，（C）含有不超过30个碳原子的有机材料的分散剂的含量为99.0〜100重量％。 换句话说，不含树脂粘合剂。