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    Magnetic sheet, module comprising same, and portable device comprising same
    5.
    发明授权
    Magnetic sheet, module comprising same, and portable device comprising same 有权

    公开(公告)号：US10784030B2

    公开(公告)日：2020-09-22

    申请号：US15766166

    申请日：2016-10-05

    申请人： Amogreentech Co. Ltd.

    发明人： Jin Hyoung Lee ,  Hyun Tae Joo ,  Chol Han Kim

    IPC分类号： H01F1/147 ,  H01F41/32 ,  H01F10/20 ,  H01F10/08 ,  H01F1/14 ,  H01F1/12 ,  H05K9/00 ,  H01F41/02 ,  H02J7/02 ,  H01F10/13 ,  B32B9/00 ,  H05K1/16 ,  H04B5/00 ,  H05K3/00 ,  H02J50/10 ,  H01F1/34 ,  H01Q1/22 ,  H01Q7/06

    摘要： Provided herein is a magnetic sheet. The magnetic sheet according to one embodiment of the present invention includes a magnetic layer formed of crushed pieces of a magnetic body to improve flexibility of the magnetic sheet, and a thin film coating layer formed on at least one surface of the magnetic layer to maintain the magnetic layer in a sheet shape and buffer an external force applied to the crushed pieces of the magnetic body. According to the present invention, since the magnetic sheet is improved in mechanical strength properties, such as a tensile property, a bending property, and the like, to have significantly superior flexibility, degradation of physical properties, such as magnetic permeability and the like, caused by physical damage such as unintended cracks in the magnetic body provided in the magnetic sheet can be prevented even in the process of storing, transferring, and attaching the magnetic sheet to a target object and during usage of an electronic device provided with the target object to which the magnetic sheet is attached, and the magnetic sheet can be attached to a target surface of the target object with a superior adhering force even when a stepped portion is present at the surface, and at the same time, the magnetic sheet can block the influence of a magnetic field on parts of a portable terminal device or a human body of a user using the portable terminal device, significantly increase transmission and reception efficiencies and distances of a data and/or wireless power signal, and maintain the above-described performance for a long period of time, such that the magnetic sheet can be widely used in various portable devices such as mobile devices, smart appliances, devices for the Internet of Things, and the like.

    MAGNETIC TUNNEL JUNCTION DEVICE
    6.
    发明申请
    MAGNETIC TUNNEL JUNCTION DEVICE 审中-公开

    公开(公告)号：US20200259077A1

    公开(公告)日：2020-08-13

    申请号：US16862598

    申请日：2020-04-30

    申请人： Japan Science and Technology Agency ,  National Institute of Advanced Industrial Science and Technology

    发明人： Shinji YUASA

    IPC分类号： H01L43/10 ,  H01L27/22 ,  G11C11/16 ,  H01L43/02 ,  H01F10/32 ,  H01L43/12 ,  H01L43/08 ,  B82Y25/00 ,  H01L27/11507 ,  H01L49/02 ,  G11C11/15 ,  H01F10/13

    摘要： The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.

    Magnetoresistive device comprising chromium
    8.
    发明授权
    Magnetoresistive device comprising chromium 有权

    公开(公告)号：US10325710B2

    公开(公告)日：2019-06-18

    申请号：US15860478

    申请日：2018-01-02

    申请人： IMEC VZW

    发明人： Johan Swerts ,  Sebastien Couet

    IPC分类号： G11B5/39 ,  H01F10/30 ,  H01F10/13 ,  H01F10/32 ,  H01F41/30 ,  H01F41/32 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/22

    摘要： The disclosed technology generally relates to a magnetoresistive device and more particularly to a magnetoresistive device comprising chromium. According to an aspect, a method of forming a magnetoresistive device comprises forming a magnetic tunnel junction (MTJ) structure over a substrate. The MTJ structure includes, in a bottom-up direction away from the substrate, a free layer, a tunnel barrier layer and a reference layer. The method additionally includes forming a pinning layer over the MTJ structure, wherein the pinning layer pins a magnetization direction of the reference layer. The method additionally includes forming capping layer comprising chromium (Cr) over the pinning layer. The method further includes annealing the capping layer under a condition sufficient to cause diffusion of Cr from the capping layer into at least the pinning layer. According to another aspect, a magnetoresistive device is formed according to the method.

    Magnetic memory with write inhibit selection and the writing method for same
    10.
    发明申请
    Magnetic memory with write inhibit selection and the writing method for same 有权
    具有写禁止选择的磁存储器及其写入方法

    公开(公告)号：US20050047206A1

    公开(公告)日：2005-03-03

    申请号：US10490490

    申请日：2002-09-19

    申请人： Jean-Pierre Nozieres ,  Laurent Ranno ,  Yann Conraux

    发明人： Jean-Pierre Nozieres ,  Laurent Ranno ,  Yann Conraux

    IPC分类号： G11C11/15 ,  G11C11/16 ,  H01F10/13 ,  H01F10/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L43/10 ,  G11C11/34

    CPC分类号： H01L43/10 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3204 ,  H01F10/3268

    摘要： The invention relates to a magnetic memory with write inhibit selection and the writing method for same. Each memory element of the invention comprises a magnetic tunnel junction (70) consisting of: a magnetic layer, known as the trapped layer (71), having hard magnetisation; a magnetic layer, known as the free layer (73), the magnetisation of which may be reversed; and an insulating layer (72) which is disposed between the free layer (73) and the trapped layer (71) and which is in contact with both of said layers. The free layer (73) is made from an amorphous or nanocrystalline alloy based on rare earth and a transition metal, the magnetic order of said alloy being of the ferrimagnetic type. The selected operating temperature of the inventive memory is close to the compensation temperature of the alloy.

    摘要翻译： 本发明涉及具有写禁止选择的磁存储器及其写入方法。 本发明的每个存储元件都包括一个磁性隧道结（70），它由以下组成：被称为被俘获层（71）的磁性层，具有硬磁化; 被称为自由层（73）的磁性层，其磁化可以颠倒; 以及设置在所述自由层（73）和所述被捕获层（71）之间并且与所述两个层接触的绝缘层（72）。 自由层（73）由基于稀土和过渡金属的无定形或纳米晶体合金制成，所述合金的磁顺序为亚铁磁型。 本发明存储器的选定工作温度接近合金的补偿温度。