摘要:
According to the present invention, a resin composition having superior workability is provided. The paste-like resin composition of the present invention adheres a semiconductor element and a base material, and contains (A) a thermosetting resin and (B) metal particles. d 95 in the volume-based particle size distribution of the metal particles as determined with a flow-type particle image analyzer is 10 µm or less. In other words, the volume ratio of metal particles having a particle diameter that exceeds 10 µm is less than 5%. Here, d 95 indicates the particle diameter at which the cumulative volume ratio thereof is 95%.
摘要:
According to the present invention, a semiconductor having excellent yield is provided. The semiconductor device (10) of the present invention includes : a base material(die pad) (2), a semiconductor element(3), and an adhesive layer(1) intervening the space between the base material and the semiconductor element (3) to adhere the base material and the semiconductor element. Thermal conductive filler (8) is contained in the adhesive layer (1), and when the content of the thermal conductive filler dispersed in the whole of the adhesive layer is expressed as C, the content of the thermal conductive filler in the region 1 ranging from the interface of the adhesive layer at the side of the semiconductor element to the depth by 2µm is expressed as C1, and the content of the thermal conductive filler in the region 2 ranging from the interface of the adhesive layer at the side of the base material to the depth by 2µm is expressed as C2, the following formulae are satisfied: C1
摘要:
A negative-electrode material is a carbonaceous negative-electrode material used in an alkali metal ion battery and an average layer spacing d 002 of face (002) calculated by an X-ray diffraction method using CuKα radiation as a radiation source is equal to or more than 0.340 nm. When the negative-electrode material is embedded in an epoxy resin, the epoxy resin is cured, the resultant cured material is cut and polished to expose a cross-section of the negative-electrode material, and the cross-section is observed in a bright field with 1000 times magnification using an optical microscope, a first region (101) and a second region (103) having different reflectance ratios are observed from the cross-section of the negative-electrode material (100).
摘要:
An object of the invention is to provide a method of manufacturing a light-emitting element, in which residue from a fixing resin layer is less likely to be left on a semiconductor layer and a supporting base in the case of manufacturing the light-emitting element by a laser lift-off technique. Furthermore, another object of the invention is to provide a highly reliable light-emitting element that is manufactured by the method of the present invention. The above-described objects are accomplished by applying a thermally decomposable resin composition as a fixing resin layer that fixes the semiconductor layer to a supporting base, and by thermally decomposing the fixing resin layer at the time of peeling off the semiconductor layer from the supporting base.
摘要:
A conductive connecting sheet (1) of the present invention is composed of a layered body including resin composition layers (11, 13) and a metal layer (12), and each resin composition layer (11, 13) satisfies the following requirement A: in the case where at least a part of metal ball(s) made of the metal material having low melting point is provided within each resin composition layer (11, 13), the metal ball(s) is heated at a temperature which is a melting temperature thereof or higher according to "test methods for soldering resin type fluxes" defined in JIS Z 3197, and then a wet extension of the metal ball (s) is measured, the wet extension is 37% or more. If the conductive connecting sheet is used for forming connection portions electrically connecting terminals to each other, the connection portions can be formed by selectively aggregating a heated and melted metal material between the terminals and a sealing layer constituted from a resin component can be formed so as to surround the connection portions. As a result, since peripheries of the connection portions can be covered by the resin component, the connection portions are fixed. Further, since an insulating property between the adjacent terminals can be secured by the sealing layer, generation of a leak current between the adjacent terminals can be reliably prevented.
摘要翻译:的导电连接片(1)本发明的由层积体的包含树脂组合物层(11,13)和金属层(12),和各树脂组合物层(11,13)SATIS外资企业下面要求答: 在其中至少有由具有低熔点的金属材料的金属球(一个或多个)的一部分的各树脂组合物层(11,13)中提供的情况下,金属球(一个或多个)在一定温度下加热所有这是一个 其熔化温度以上gemäß到“测试方法用于焊接树脂型通量”在JIS Z 3197所定义,然后将金属球(一个或多个)的湿延伸测定,湿延伸是37%以上。 如果导电连接片被用于形成连接部分电连接端子海誓山盟,连接部分可以通过选择性地聚集在端子和密封层之间的加热熔融金属材料来形成由树脂成分构成,可以形成为 以围绕连接部。 其结果是,由于连接部份的边缘可以通过树脂成分所覆盖,所述连接部分被固定。 此外,由于在相邻的端子之间的绝缘性可以通过密封层被固定,产生相邻端子之间的漏电流可以被可靠地防止。
摘要:
The present invention provides a conductive connecting material having a multi-layered structure comprising a resin composition and a metal foil selected from a solder foil or a tin foil, wherein the minimum ion viscosity value of the resin composition is 4-9 when measured in accordance with ASTM standard E2039 by applying a frequency of 10000Hz at the melting point of the metal foil. The present invention further provides a method for connecting terminals and a method for producing a connection terminal using the conductive connecting material. By using the conductive connecting material of the present invention, good electric connection between connection terminals as well as highly-reliable insulation between adjacent terminals can be achieved.
摘要:
Provided is a method for manufacturing an electronic component by using a solder joining method for bonding a first electronic component having a metal electrode for connection purposes with a second electronic component having a solder electrode for connection purposes, the method comprising the steps (i) to (iv) in this order: (i) forming a resin layer containing a thermosetting resin on at least one of the solder joint surfaces of said first electronic component and said second electronic component; (ii) positioning, after the formation of said resin layer containing a thermosetting resin, said metal electrode for connection purposes of said first electronic component and said solder electrode for connection purposes of said second electronic component to face each other, heating said positioned electrodes at a temperature lower than the melting point of said solder of said solder electrode for connection purposes and applying pressure, and thereby bringing said metal electrode for connection purposes and said solder electrode for connection purposes into contact; (iii) heating said first electronic component and said second electronic component that have been brought into contact at a temperature higher than the melting point of said solder of said solder electrode for connection purposes while applying pressure using a pressurized fluid, and thereby fusion bonding said solder of said solder electrode for connection purposes to said metal electrode for connection purposes; and (iv) heating said resin layer containing a thermosetting resin at a temperature lower than the melting point of said solder of said solder electrode for connection purposes, and thereby curing said resin layer.
摘要:
A film for semiconductor includes a support film, a second adhesive layer, a first adhesive layer and a bonding layer which are laminated together in this order. This film for semiconductor is configured so that it supports a semiconductor wafer laminated on the bonding layer thereof when the semiconductor wafer is diced and the bonding layer is selectively peeled off from the first adhesive layer when a chip is picked up. This film for semiconductor is characterized in that in the case where peel strength at 23°C of the chip is defined as "F 23 (cN/25mm)" and peel strength at 60°C of the chip is defined as "F 60 (cN/25mm) ", F 23 is in the range of 10 to 80 and F 60 /F 23 is in the range of 0.3 to 5.5. This makes it possible to improve a pickup property of the chip, to thereby prevent generation of defects in a semiconductor element.