公开(公告)号：EP2239766B1

公开(公告)日：2013-03-20

申请号：EP09703155.3

申请日：2009-01-20

申请人： Nippon Steel & Sumikin Materials Co., Ltd. ,  Nippon Micrometal Corporation

发明人： UNO, Tomohiro ,  KIMURA, Keiichi ,  YAMADA, Takashi

IPC分类号： H01L21/60 ,  C22C5/02 ,  C22C9/00 ,  C22F1/08 ,  C22F1/14 ,  C22F1/00 ,  H01B5/02

CPC分类号： C22C5/02 ,  B21C37/047 ,  B23K35/0261 ,  B23K35/0272 ,  B23K35/24 ,  B23K35/30 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/302 ,  C22C9/00 ,  C22F1/08 ,  C22F1/14 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/45169 ,  H01L2224/45173 ,  H01L2224/45176 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/456 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45673 ,  H01L2224/45676 ,  H01L2224/48011 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/4848 ,  H01L2224/4849 ,  H01L2224/4851 ,  H01L2224/48511 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85186 ,  H01L2224/85203 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2225/06562 ,  H01L2924/00015 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/20752 ,  H01L2924/3025 ,  H01L2924/01004 ,  H01L2924/01203 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45671 ,  H01L2224/45666 ,  H01L2924/01204 ,  H01L2924/01202 ,  H01L2224/48465 ,  H01L2924/20751 ,  H01L2924/01001 ,  H01L2924/20655 ,  H01L2924/20652 ,  H01L2924/20653 ,  H01L2924/20654 ,  H01L2924/20656 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/20753 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/2075 ,  H01L2924/20754

摘要： An object of the present invention is to provide a high-performance bonding wire that is suitable for semiconductor mounting technology, such as stacked chip bonding, thinning, and fine pitch mounting, where wire lean (leaning) at an upright position of a ball and spring failure can be suppressed and loop linearity and loop height stability are excellent. This bonding wire for a semiconductor device includes a core material made of a conductive metal, and a skin layer formed on the core material and containing a metal different from the core material as a main component; wherein a relationship between an average size (a) of crystal grains in the skin layer on a wire surface along a wire circumferential direction and an average size (b) of crystal grains in the core material on a normal cross section, the normal cross section being a cross section normal to a wire axis, satisfies an inequality of a/b ‰¤ 0.7.

公开(公告)号：EP2525403A1

公开(公告)日：2012-11-21

申请号：EP12161081.0

申请日：2012-03-23

申请人： SanDisk Semiconductor (Shanghai) Co., Ltd. ,  SanDisk Information Technology (Shanghai) Co., Ltd

发明人： Lu, Zhong ,  Yu, Fen ,  Chiu, Chin Tien ,  Yu, Cheeman ,  Xiao, Fuqiang

IPC分类号： H01L25/065 ,  H01L23/49 ,  H01L21/60

CPC分类号： H01L23/49866 ,  H01L21/768 ,  H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/03013 ,  H01L2224/03614 ,  H01L2224/04042 ,  H01L2224/05026 ,  H01L2224/05124 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06145 ,  H01L2224/06155 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/45565 ,  H01L2224/45664 ,  H01L2224/48091 ,  H01L2224/48096 ,  H01L2224/48145 ,  H01L2224/48147 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48456 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/48471 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/78349 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2224/85948 ,  H01L2224/92247 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/48095

摘要： A wire bonded structure (100) for a semiconductor device is disclosed. The wire bonded structure (100) comprises a bonding pad (104) and a continuous length of wire (110) mutually diffused with the bonding pad (104). The wire (110) electrically couples the bonding pad (104) with a first electrical contact and a second electrical contact different from the first electrical contact.

摘要翻译： 公开了一种用于半导体器件的引线接合结构（100）。 引线接合结构（100）包括接合焊盘（104）和与焊盘（104）相互扩散的连续长度的焊丝（110）。 导线（110）将接合焊盘（104）与第一电触点和不同于第一电触头的第二电触点电耦合。

公开(公告)号：EP2239766A4

公开(公告)日：2011-03-02

申请号：EP09703155

申请日：2009-01-20

申请人： NIPPON STEEL MATERIALS CO LTD ,  NIPPON MICROMETAL CORP

发明人： UNO TOMOHIRO ,  KIMURA KEIICHI ,  YAMADA TAKASHI

IPC分类号： H01L21/60 ,  C22C5/02 ,  C22C9/00 ,  C22F1/00 ,  C22F1/08 ,  C22F1/14 ,  H01B5/02

CPC分类号： C22C5/02 ,  B21C37/047 ,  B23K35/0261 ,  B23K35/0272 ,  B23K35/24 ,  B23K35/30 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/302 ,  C22C9/00 ,  C22F1/08 ,  C22F1/14 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/45169 ,  H01L2224/45173 ,  H01L2224/45176 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/456 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45673 ,  H01L2224/45676 ,  H01L2224/48011 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/4848 ,  H01L2224/4849 ,  H01L2224/4851 ,  H01L2224/48511 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85186 ,  H01L2224/85203 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2225/06562 ,  H01L2924/00015 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/20752 ,  H01L2924/3025 ,  H01L2924/01004 ,  H01L2924/01203 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45671 ,  H01L2224/45666 ,  H01L2924/01204 ,  H01L2924/01202 ,  H01L2224/48465 ,  H01L2924/20751 ,  H01L2924/01001 ,  H01L2924/20655 ,  H01L2924/20652 ,  H01L2924/20653 ,  H01L2924/20654 ,  H01L2924/20656 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/20753 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/2075 ,  H01L2924/20754

摘要： An object of the present invention is to provide a high-performance bonding wire that is suitable for semiconductor mounting technology, such as stacked chip bonding, thinning, and fine pitch mounting, where wire lean (leaning) at an upright position of a ball and spring failure can be suppressed and loop linearity and loop height stability are excellent. This bonding wire for a semiconductor device includes a core material made of a conductive metal, and a skin layer formed on the core material and containing a metal different from the core material as a main component; wherein a relationship between an average size (a) of crystal grains in the skin layer on a wire surface along a wire circumferential direction and an average size (b) of crystal grains in the core material on a normal cross section, the normal cross section being a cross section normal to a wire axis, satisfies an inequality of a/b ‰¤ 0.7.

公开(公告)号：EP1908102A2

公开(公告)日：2008-04-09

申请号：EP06786563.4

申请日：2006-06-29

申请人： Hewlett-Packard Development Company, L.P.

发明人： CRAIG, David M. ,  CHEN, Chien-Hua

IPC分类号： H01L21/60 ,  B23K20/00 ,  H01L21/603 ,  H01L21/607

CPC分类号： H01L24/85 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/80 ,  H01L2224/05554 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4809 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/48471 ,  H01L2224/48475 ,  H01L2224/48599 ,  H01L2224/49171 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85051 ,  H01L2224/8518 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01054 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10161 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/4554 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A substrate is electrically connected with an electrical device mounted on the substrate. A ball bond is formed between a first end of a wire and a bonding pad of the substrate. A reverse-motion loop is formed within the wire. A bond is formed between a second end of the wire and a bonding pad of the electrical device.

摘要翻译： 基板与安装在基板上的电气装置电连接。 在导线的第一端和基板的焊盘之间形成球接合。 在线内形成反向运动回路。 在电线的第二端和电气装置的接合焊盘之间形成接合。

公开(公告)号：EP1451870A2

公开(公告)日：2004-09-01

申请号：EP02800332.5

申请日：2002-09-12

申请人： MOTOROLA, INC.

发明人： O'CONNOR, Shawn, M. ,  GERBER, Mark, Allen ,  MILLER, Jean, Desiree

IPC分类号： H01L23/50

CPC分类号： H01L24/85 ,  H01L23/49838 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0657 ,  H01L2223/6611 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05647 ,  H01L2224/32145 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48233 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/48647 ,  H01L2224/48847 ,  H01L2224/49052 ,  H01L2224/49171 ,  H01L2224/49174 ,  H01L2224/85051 ,  H01L2224/85986 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/20752 ,  H01L2224/85186 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/4554

摘要： A semiconductor die (12) has three rows (16, 18, 20) or more of bond pads with minimum pitch. The die (12) is mounted on a package substrate (14) having three rows or more of bond fingers (26, 28) and/or conductive rings (22, 24). The bond pads (16) on the outermost part of the die (nearest the perimeter of the die) are connected by a relatively lower height wire (42) achieved by reverse stitching to the innermost ring(s) or row (24) (farthest from the perimeter of the package substrate) of bond fingers. The innermost row of bond pads (20) is connected by a relatively higher height wire (86) achieved by ball bond to wedge bond to the outermost row of the bond fingers (26). The intermediate row of bond pads (18) is connected by relatively intermediate height wire (88) by ball bond to wedge bond to the intermediate row of bond fingers (28). The varying height wire allows for tightly packed bond pads. The structure is adaptable for stacked die.

摘要翻译： 半导体管芯（12）具有三排（16,18,20）或更多具有最小间距的接合焊盘。 模具（12）安装在具有三行或更多个键指（26,28）和/或导电环（22,24）的封装衬底（14）上。 模具的最外部部分（最靠近模具的周边）上的接合焊盘（16）通过反向缝合实现的相对较低的高度的线（42）连接到最内环（24）（最远） 从封装基板的周边）的键指。 最内排的接合焊盘（20）由通过球接合实现的相对较高的高度线（86）连接到楔结合到结合指状物（26）的最外排。 中间排的接合焊盘（18）通过相对较高的中间高度的线（88）通过球接合连接到楔形结合到键合指中间排（28）。 不同的高度线允许紧密包装的接合垫。 该结构适用于堆叠模具。

公开(公告)号：EP0641486A1

公开(公告)日：1995-03-08

申请号：EP94913289.0

申请日：1994-03-18

申请人： NATIONAL SEMICONDUCTOR CORPORATION

发明人： MATHEW, Ranjan, J. ,  SMITH, Arnold ,  NGUYEN, Luu, T.

IPC分类号： H01L21

CPC分类号： H01L24/85 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/4945 ,  H01L2224/78301 ,  H01L2224/85051 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85191 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85986 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/14 ,  H01L2224/45099 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/85399 ,  H01L2224/4554

摘要： Certain components of an integrated circuit package are disclosed herein including one or more dies (16), each of which has an array of die output/input bond pads (18), and die support means (12), for example a substrate or leadframe, which includes an array of electrically conductive leads. There is also disclosed herein a technique for wire bond connecting the bond pads of a particular die to either the bond pads (38) of a second die (34) or to the electrically conductive leads of the substrate or leadframe using a thermosonic or thermocompression ball bonding tool. In accordance with this technique, where at least one die is invovled, connections are made to the bond pads of that die by means of stitch bonding in a way which does not damage the die.

摘要翻译： 的集成电路封装的某些组件是盘在包含一个游离缺失或更多的话，其中的每一个具有与输入/输出焊盘的阵列，并且所述支撑装置，例如一个基板或引线框，其包括到导电引线的阵列 ， 因此，存在的技术中游离缺失用于引线键合连接的特定的键合焊盘盘的任一秒钟或的键合焊盘来使用热声波或热压球焊工具在基板或引线框的导电引线。 在该技术中，其中至少一个其涉及，连接到的键合焊盘由雅舞蹈的方式不损害管芯做过通过针脚式键合的手段。

公开(公告)号：EP0126664A2

公开(公告)日：1984-11-28

申请号：EP84400788.0

申请日：1984-04-19

申请人： FUJITSU LIMITED

发明人： Mizukoshi, Masataka ,  Endo, Teiichi

IPC分类号： H01L23/48 ,  H01L21/60

CPC分类号： H01L24/85 ,  H01L23/498 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/06153 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/4809 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48471 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/49052 ,  H01L2224/49109 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/4945 ,  H01L2224/78313 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85191 ,  H01L2224/85986 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/00 ,  H01L2924/2075 ,  H01L2224/05599 ,  H01L2224/85399

摘要： A semiconductor device comprising a semiconductor chip (10), a package (20) for housing the semiconductor chip, and wires (3a, 3b) for bonding one of a plurality of electrodes (1) formed on the semiconductor chip and one of a plurality of electrodes (2) formed on the package. Each of the wires (3a, 3b) has a portion rising at a steep angle with respect to one of the electrodes to be bonded and a portion descending at a gentle angle with respect to the other of the electrodes to be bonded. The rising portion and the descending portion of each wire are disposed in reverse positions with respect to the rising portion and the descending portion of the adjacent wires.

摘要翻译： 一种半导体器件，包括：半导体芯片，封装用于容纳半导体芯片，以及用于接合形成在半导体芯片和形成于该封装电极的多个1上的电极的多个导线一个。 每根导线具有在相对于所述电极中的一个将被粘接并以平缓的角度相对于所述另一个电极的下降的部分被结合的陡角上升的部分。 立起部，并且每个线的下降部分被布置在相反的位置处相对于所述立起部和所述相邻导线的下降部分。

公开(公告)号：EP3346492A3

公开(公告)日：2018-08-08

申请号：EP17197972.7

申请日：2017-10-24

申请人： MediaTek Inc.

发明人： TSAI, Shiann-Tsong ,  WANG, Hsueh-Te

IPC分类号： H01L23/49 ,  H01L23/482 ,  H01L25/10 ,  H01L23/544 ,  H01L21/60 ,  H01L23/433 ,  H01L23/498 ,  H05K1/09 ,  H01L23/31 ,  H01L23/373

CPC分类号： H01L25/105 ,  H01L21/6835 ,  H01L23/3171 ,  H01L23/3733 ,  H01L23/4334 ,  H01L23/4828 ,  H01L23/49883 ,  H01L23/544 ,  H01L24/05 ,  H01L24/48 ,  H01L24/75 ,  H01L24/81 ,  H01L24/85 ,  H01L2221/68345 ,  H01L2223/54486 ,  H01L2224/02166 ,  H01L2224/05124 ,  H01L2224/05624 ,  H01L2224/48247 ,  H01L2224/48479 ,  H01L2224/48499 ,  H01L2224/75272 ,  H01L2224/81855 ,  H01L2224/85186 ,  H01L2224/85855 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2224/48471 ,  H01L2924/00012

摘要： A semiconductor chip package includes a substrate; a semiconductor die (120) mounted on the substrate, wherein the semiconductor die (120) comprises a bond pad (122) disposed on an active surface of the semiconductor die (120), and a passivation layer (124) covering perimeter of the bond pad (122), wherein a bond pad opening (124a)in the passivation layer (124) exposes a central area of the bond pad (122); a conductive paste post (130) printed on the exposed central area of the bond pad (122) ; and a bonding wire (180) secured to a top surface of the conductive paste post (130). The conductive paste post preferably comprises copper paste.

公开(公告)号：EP3346492A2

公开(公告)日：2018-07-11

申请号：EP17197972.7

申请日：2017-10-24

申请人： MediaTek Inc.

发明人： TSAI, Shiann-Tsong ,  WANG, Hsueh-Te

IPC分类号： H01L23/49 ,  H01L23/482 ,  H01L25/10 ,  H01L23/544 ,  H01L21/60 ,  H01L23/433 ,  H01L23/498 ,  H05K1/09 ,  H01L23/31 ,  H01L23/373

CPC分类号： H01L25/105 ,  H01L21/6835 ,  H01L23/3171 ,  H01L23/3733 ,  H01L23/4334 ,  H01L23/4828 ,  H01L23/49883 ,  H01L23/544 ,  H01L24/05 ,  H01L24/48 ,  H01L24/75 ,  H01L24/81 ,  H01L24/85 ,  H01L2221/68345 ,  H01L2223/54486 ,  H01L2224/02166 ,  H01L2224/05124 ,  H01L2224/05624 ,  H01L2224/48247 ,  H01L2224/48479 ,  H01L2224/48499 ,  H01L2224/75272 ,  H01L2224/81855 ,  H01L2224/85186 ,  H01L2224/85855 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2224/48471 ,  H01L2924/00012

摘要： A semiconductor chip package includes a substrate; a semiconductor die (120) mounted on the substrate, wherein the semiconductor die (120) comprises a bond pad (122) disposed on an active surface of the semiconductor die (120), and a passivation layer (124) covering perimeter of the bond pad (122), wherein a bond pad opening (124a)in the passivation layer (124) exposes a central area of the bond pad (122); a conductive paste post (130) printed on the exposed central area of the bond pad (122) ; and a bonding wire (180) secured to a top surface of the conductive paste post (130). The conductive paste post preferably comprises copper paste.

公开(公告)号：EP3036688A4

公开(公告)日：2017-05-17

申请号：EP14838089

申请日：2014-08-22

申请人： FINGERPRINT CARDS AB

发明人： JÄGEMALM PONTUS ,  LUNDAHL KARL ,  SLOTTNER MATS ,  THÖRNBLOM HANS ,  JULIAN OJIE

IPC分类号： G06K9/00 ,  H01L23/00

CPC分类号： G06K9/0002 ,  H01L24/03 ,  H01L24/05 ,  H01L24/09 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/033 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/035 ,  H01L2224/04042 ,  H01L2224/05022 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/06179 ,  H01L2224/48091 ,  H01L2224/48148 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/49175 ,  H01L2224/85186 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2924/10157 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/4554