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    Reducing MEMS stiction by introduction of a carbon barrier
    32.
    发明公开
    Reducing MEMS stiction by introduction of a carbon barrier 有权
    红宝石科技股份有限公司Einbringen einer Kohlenstoffbarriereschicht

    公开(公告)号：EP2746217A1

    公开(公告)日：2014-06-25

    申请号：EP13196313.4

    申请日：2013-12-09

    Applicant: Freescale Semiconductor, Inc.

    Inventor： Montez, Ruben B. ,  Steimle, Robert F.

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B81B3/0005 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81B2203/06 ,  B81C1/0038 ,  B81C1/00952 ,  B81C2201/0169 ,  B81C2201/112 ,  G01P15/0802 ,  G01P2015/0871 ,  G01P2015/0874

    Abstract: A mechanism for reducing stiction in a MEMS device by decreasing an amount of carbon from TEOS-based silicon oxide films that can accumulate on polysilicon surfaces during fabrication is provided. A carbon barrier material film (510, 520) is deposited between one or more polysilicon layer (210, 230) in a MEMS device and the TEOS-based silicon oxide layer (220). This barrier material blocks diffusion of carbon into the polysilicon, thereby reducing accumulation of carbon on the polysilicon surfaces. By reducing the accumulation of carbon, the opportunity for stiction due to the presence of the carbon is similarly reduced.

    Abstract translation: 提供了一种用于通过减少在制造期间可以积聚在多晶硅表面上的来自TEOS的氧化硅膜的碳的量来降低MEMS器件中的静电的机制。 在MEMS器件中的一个或多个多晶硅层（210,230）和基于TEOS的氧化硅层（220）之间沉积碳阻挡材料膜（510,520）。 该阻挡材料阻止碳扩散到多晶硅中，从而减少碳在多晶硅表面上的积累。 通过减少碳的积累，由于碳的存在而导致的静电机会同样地减少。

    MICROMACHINED MONOLITHIC 3-AXIS GYROSCOPE WITH SINGLE DRIVE
    37.
    发明公开
    MICROMACHINED MONOLITHIC 3-AXIS GYROSCOPE WITH SINGLE DRIVE 有权
    微型机械单轴三轴陀螺仪

    公开(公告)号：EP2616772A2

    公开(公告)日：2013-07-24

    申请号：EP11826071.0

    申请日：2011-09-18

    Applicant: Fairchild Semiconductor Corporation

    Inventor： ACAR, Cenk

    IPC: G01C19/56 ,  B81B3/00

    CPC classification number: H01L29/84 ,  B81B7/04 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/051 ,  B81B2203/053 ,  B81B2203/055 ,  B81B2203/056 ,  B81B2203/058 ,  B81B2207/094 ,  G01C19/5755 ,  G01P15/125 ,  G01P15/18 ,  G01P2015/0848

    Abstract: This document discusses, among other things, a cap wafer and a via wafer configured to encapsulate a single proof-mass 3-axis gyroscope formed in an x-y plane of a device layer. The single proof-mass 3-axis gyroscope can include a main proof-mass section suspended about a single, central anchor, the main proof-mass section including a radial portion extending outward towards an edge of the 3-axis gyroscope sensor, a central suspension system configured to suspend the 3-axis gyroscope from the single, central anchor, and a drive electrode including a moving portion and a stationary portion, the moving portion coupled to the radial portion, wherein the drive electrode and the central suspension system are configured to oscillate the 3-axis gyroscope about a z-axis normal to the x-y plane at a drive frequency.

    Abstract translation: 该文献尤其讨论了帽晶片和通孔晶片，其被配置为封装在器件层的x-y平面中形成的单个质量块3轴陀螺仪。 单个质量块三轴陀螺仪可以包括悬挂在单个中心锚上的主质量块部分，主质量块部分包括径向部分，该部分朝向三轴陀螺仪传感器的边缘向外延伸，中心 悬架系统，所述悬架系统被构造成将所述3轴陀螺仪从所述单个中央锚定件悬置，以及驱动电极，所述驱动电极包括移动部分和静止部分，所述移动部分联接到所述径向部分，其中，所述驱动电极和所述中央悬架系统被配置 以驱动频率围绕垂直于xy平面的z轴振荡3轴陀螺仪。

    HALBLEITER SENSORBAUTEIL
    39.
    发明公开
    HALBLEITER SENSORBAUTEIL 有权
    半导体传感器COMPONENT

    公开(公告)号：EP2524389A2

    公开(公告)日：2012-11-21

    申请号：EP11700251.9

    申请日：2011-01-10

    Applicant: ELMOS Semiconductor AG

    Inventor： TEN HAVE, Arnd

    IPC: H01L21/18

    CPC classification number: B81C1/00158 ,  B81B3/0018 ,  B81B3/0021 ,  B81B3/007 ,  B81B3/0072 ,  B81B3/0081 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00626 ,  B81C99/0035 ,  B81C2201/019 ,  G01L9/0047 ,  H01L29/4916 ,  H01L29/84

    Abstract: The semiconductor component, in particular for use as a component that is sensitive to mechanical stresses in a micro-electromechanical semiconductor component, for example a pressure or acceleration sensor, is provided with a semiconductor substrate (1, 5), in the upper face of which an active region (78a, 200) made of a material of a first conductivity type is introduced by ion implantation. A bisecting channel region having a defined length (L) and width (B) is designed within the active region (78a, 200). In the active region (78a, 200), each of the ends of the channel region located in the longitudinal extension is followed by a contacting region (79, 80) made of a semiconductor material of a second conductivity type. The channel region is covered by an ion implantation masking material (81), which comprises transverse edges defining the length (L) of the channel region and longitudinal edges defining the width (B) of the channel region and which comprises an edge recess (201, 202) at each of the opposing transverse edges aligned with the longitudinal extension ends of the channel region, the contacting regions (79, 80) that adjoin the channel region extending all the way into said edge recess.

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