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    PROCESS FOR PRODUCING METALLIZED CERAMIC SUBSTRATE, METALLIZED CERAMIC SUBSTRATE PRODUCED BY THE PROCESS, AND PACKAGE
    75.
    发明公开
    PROCESS FOR PRODUCING METALLIZED CERAMIC SUBSTRATE, METALLIZED CERAMIC SUBSTRATE PRODUCED BY THE PROCESS, AND PACKAGE 有权
    用于生产金属化陶瓷基板，通过工艺生产的金属化陶瓷基板和封装

    公开(公告)号：EP1981319A1

    公开(公告)日：2008-10-15

    申请号：EP07707203.1

    申请日：2007-01-23

    申请人： Tokuyama Corporation

    发明人： YAMAMOTO, Yasuyuki ,  YATABE, Osamu ,  MAEDA, Masakatsu

    IPC分类号： H05K3/24 ,  H01L23/12 ,  H05K3/12

    CPC分类号： H01L23/15 ,  H01L23/10 ,  H01L2924/0002 ,  H01L2924/01079 ,  H05K1/092 ,  H05K3/4667 ,  H05K2201/0266 ,  H05K2201/0352 ,  Y10T428/131 ,  Y10T428/24355 ,  Y10T428/24917 ,  Y10T428/24926 ,  Y10T428/24942 ,  Y10T428/31 ,  H01L2924/00

    摘要： The present invention is to provide a fabrication method for metallized ceramics substrate comprising the steps of: forming a first conductive paste layer containing metallic powder on a sintered ceramics substrate; forming a second conductive paste layer containing metallic powder of which average particle diameter is different from that of metallic powder constituting the first conductive paste layer; and forming a first conductive layer and a second conductive layer by firing the first conductive paste layer and the second conductive paste layer, wherein surface roughness of the first conductive layer and the second conductive layer is different. By this method, it is possible to secure airtightness of the metallized ceramics substrate even if it is a multilayered substrate having a plurality of metallized layers.

    摘要翻译： 本发明是提供一种用于包括以下步骤的金属化陶瓷基片的制造方法：形成第一层的导电膏包含在烧结陶瓷基片的金属粉末; 形成第二层的导电糊含有平均粒径的金属粉末是从构成金属粉末不同做的第一导电性糊剂层; 和形成第一层和通过烧制所述第一导电膏层和第二层的导电膏中，第一层的worin表面粗糙度和第二导电导电层的第二导电层的导电是不同的。 通过该方法，能够确保金属化陶瓷基片的气密性，即使它是具有金属化层上的多个多层基板。

    MEMBER FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURE THEREOF
    79.
    发明公开
    MEMBER FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURE THEREOF 审中-公开
    ELEMENTFÜREIN HALBLEITERBAUTEIL UND HERSTELLUNGSVERFAHRENDAFÜR

    公开(公告)号：EP1858078A1

    公开(公告)日：2007-11-21

    申请号：EP06711530.3

    申请日：2006-01-11

    申请人： A.L.M.T. CORP.

    发明人： FUKUI, Akira

    IPC分类号： H01L23/373 ,  C22C1/05

    CPC分类号： H01L23/15 ,  B22F7/04 ,  B22F2998/10 ,  B22F2999/00 ,  C22C1/1084 ,  C22C29/065 ,  C22C32/0063 ,  H01L21/563 ,  H01L23/3731 ,  H01L23/3735 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/01019 ,  H01L2924/01025 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15311 ,  H01L2924/16152 ,  C22C1/051 ,  B22F3/02 ,  B22F3/14 ,  B22F3/18 ,  B22F1/0085 ,  H01L2924/00

    摘要： A member for a semiconductor device of low price, capable of forming a high quality plating layer on a surface, having heat conductivity at high temperature (100°C) of more than or equal to 180 W/m·K and toughness that will not cause breaking due to screwing, and will not cause solder breaking due to heat stress when it is bonded to other member with solder, and a production method thereof are provided. A member for a semiconductor device (1) having a coefficient of thermal expansion ranging from 6.5 × 10 -6 /K to 15 × 10 -6 /K inclusive, and heat conductivity at 100°C of more than or equal to 180 W/m ·K, has: a base material (11) formed of an aluminum-silicon carbide composite material starting from powder material in which particulate silicon carbide is dispersed in aluminum or aluminum alloy, and the content of the silicon carbide is from 30% by mass to 85% by mass inclusive; and a superficial layer (12) containing aluminum or aluminum alloy starting from a melt material bonded on top and bottom faces of the base material (11).

    摘要翻译： 一种低价格的半导体器件的构件，能够在表面形成高品质的镀层，在高温（100℃）下具有大于或等于180W / m·K的导热性和不会导致的韧性 由于旋转而导致断裂，并且当与焊料结合到其它构件时不会由于热应力而导致焊料断裂，并且提供其制造方法。 具有热膨胀系数为6.5×10 -6 / K〜15×10 -6 / K的半导体装置（1）的构件，100℃下的导热率为180W / m·K具有：由碳化硅颗粒分散在铝或铝合金中的粉末材料开始由铝 - 碳化硅复合材料形成的基材（11），并且碳化硅的含量为30％ 质量至85质量％; 以及从熔融材料开始的含有铝或铝合金的表面层（12），其结合在基材（11）的顶面和底面上。