公开(公告)号：EP2200934A4

公开(公告)日：2012-10-17

申请号：EP08843214

申请日：2008-10-27

申请人： QUNANO AB

发明人： SAMUELSON LARS ,  OHLSSON JONAS ,  MAARTENSSON THOMAS ,  SVENSSON PATRIK

IPC分类号： B82Y10/00 ,  H01L21/02 ,  H01L29/06

CPC分类号： H01L29/0665 ,  B81C1/00111 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02538 ,  H01L21/02609 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L33/18 ,  Y10S438/946 ,  Y10S438/974 ,  Y10S977/721 ,  Y10S977/762 ,  Y10S977/815 ,  Y10S977/89 ,  Y10S977/949

公开(公告)号：EP2129620A4

公开(公告)日：2012-09-12

申请号：EP08724308

申请日：2008-03-28

申请人： QUNANO AB

发明人： WERNERSSON LARS-ERIK

IPC分类号： B82B1/00 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L29/08 ,  H01L29/78

CPC分类号： H01L29/78642 ,  B82Y10/00 ,  H01L21/823487 ,  H01L21/823885 ,  H01L27/088 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78687

公开(公告)号：EP1883101A3

公开(公告)日：2012-05-30

申请号：EP07119863.4

申请日：2005-05-31

申请人： Nikon Corporation

发明人： Kamaeyama, Masaomi ,  Kaneko, Norio ,  Taki, Yusuke

IPC分类号： H01L21/00 ,  H01L51/10

CPC分类号： H01L29/66439 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/66757 ,  H01L29/785 ,  H01L51/0003 ,  H01L51/0049 ,  H01L51/0545

摘要： Upon fixing fine particulate active element members AE1 to AE3, which are carbon nanotube, rod-shaped semiconductor crystal, or the like, in an electronic device at predetermined positions thereof respectively, a method for producing an electronic device includes: dispersing the fine particulate active element members in a dielectric liquid 12 and filling the liquid in a space between a process-objective substrate 20 and a mask 1 which is placed opposite to the substrate and which has predetermined pattern electrodes P1C, P1L, P1R formed therein; and applying a predetermined voltage to the predetermined electrodes to concentrate the fine particulate active element members at positions which correspond to positions of the pattern electrodes, respectively. In this state, a light is irradiated to the substrate and the fine particulate active element members in the liquid so as to fix the fine particulate active element members to the substrate by a photochemical reaction. Thus, a high-performance electronic device using carbon nanotubes or rod-shaped semiconductor crystal can be manufactured at low cost.

公开(公告)号：EP2451741A2

公开(公告)日：2012-05-16

申请号：EP10797297.8

申请日：2010-07-07

申请人： Samsung Electronics Co., Ltd.

发明人： JANG, Eun-Joo ,  HONG, Seok-Hwan ,  JUN, Shin-Ae ,  JANG, Hyo-Sook

IPC分类号： B82B3/00 ,  B82B1/00

CPC分类号： C09K11/025 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C09K11/703 ,  H01L29/0665 ,  H01L29/0673 ,  H01L33/502 ,  H01L51/0092 ,  H01L51/502 ,  H01L51/5056 ,  H01L51/5072 ,  Y10S977/774 ,  Y10S977/892 ,  Y10S977/896 ,  Y10S977/95

摘要： A semiconductor nanocrystal and a preparation method thereof, where the semiconductor nanocrystal include a bare semiconductor nanocrystal and a water molecule directly bound to the bare semiconductor nanocrystal.

摘要翻译： 半导体纳米晶体及其制备方法，其中半导体纳米晶体包括裸半导体纳米晶体和直接结合到裸半导体纳米晶体的水分子。

公开(公告)号：EP2206153B1

公开(公告)日：2012-04-04

申请号：EP08847695.7

申请日：2008-11-04

申请人： Christian-Albrechts-Universität Zu Kiel

发明人： FAUPEL, Franz ,  ADELUNG, Rainer ,  ELBAHRI, Mady ,  HIRMAS, Khaled

IPC分类号： H01L29/06 ,  B05D1/42 ,  B05D5/00

CPC分类号： B05D1/42 ,  B05D1/26 ,  B05D1/265 ,  B05D5/00 ,  B05D2203/30 ,  B81C1/00031 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673

摘要： Disclosed is a method for producing regularly arranged nanowires from a nanowire-forming material on a substrate. Said method is characterized by the following steps: a) the material is introduced into a carrier liquid at a load remaining at least three orders of magnitude below the loading capacity of the carrier liquid; b) a guiding member is placed on the substrate; c) the substrate is heated to a temperature at which a thin film of the carrier liquid undergoes spinodal decrosslinking on the substrate; d) a film of the carrier liquid that is loaded with material is applied to the heated substrate in the surroundings of the guiding member, where a gradient of the average film thickness is obtained perpendicular to the contour of the guiding member; and e) the carrier liquid is evaporated such that the material is left along lines extending perpendicular to the gradient of the film thickness.

公开(公告)号：EP2298968A3

公开(公告)日：2011-10-05

申请号：EP10195590.4

申请日：2001-08-22

申请人： President and Fellows of Harvard College

发明人： Lieber, Charles ,  Cui, Ying ,  Duan, Xiangfeng ,  Huang, Yung-Sheng

IPC分类号： C30B7/00 ,  C30B29/60 ,  H01L29/06 ,  H01L21/02 ,  C30B11/12 ,  H01L29/207 ,  H01L29/16 ,  B82Y10/00 ,  B82Y15/00 ,  G11C13/00 ,  C30B11/00 ,  C30B25/00 ,  G01N27/414 ,  G01N33/543 ,  H01L51/00

CPC分类号： H01L29/0665 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J35/0013 ,  B01J37/349 ,  B81C1/0019 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/18 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/267 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L51/002 ,  H01L51/0048 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/892 ,  Y10S977/936 ,  Y10T428/24 ,  H01L2924/00

摘要： A method comprises providing a population of catalyst particles and growing a population of semiconductor nanowires catalytically from the population of catalyst particles. The nanowires of the population have a variation in diameter of less than about 20%, and the nanowires of the population have a smallest width less than 500 nanometers. Preferably the nanowires of the population have a variation in diameter of less than about 10%.

公开(公告)号：EP2360298A2

公开(公告)日：2011-08-24

申请号：EP10195600.1

申请日：2001-08-22

申请人： President and Fellows of Harvard College

发明人： Lieber, Charles ,  Cui, Ying ,  Duan, Xiangfeng ,  Huang, Yung-Sheng

IPC分类号： C30B29/60 ,  C30B7/00 ,  H01L29/06 ,  H01L21/02

CPC分类号： H01L29/0665 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J35/0013 ,  B01J37/349 ,  B81C1/0019 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/18 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/267 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L51/002 ,  H01L51/0048 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/892 ,  Y10S977/936 ,  Y10T428/24 ,  H01L2924/00

摘要： A method for depositing one or more semiconductor nanowires on a substrate, the method comprising providing a substrate and depositing the one or more semiconductor nanowires on the surface of the substrate.

摘要翻译： 一种用于在衬底上沉积一个或多个半导体纳米线的方法，所述方法包括提供衬底并在所述衬底的表面上沉积所述一个或多个半导体纳米线。

公开(公告)号：EP1748503B1

公开(公告)日：2011-07-13

申请号：EP06120727.0

申请日：2003-02-19

申请人： International Business Machines Corporation

发明人： Appenzeller, Joerg ,  Avouris, Phaedon ,  Chan, Kevin K. ,  Collins, Philip G. ,  Martel, Richard ,  Wong, Hon-Sum Philip Stanford University

IPC分类号： H01L51/10 ,  H01L51/30

CPC分类号： H01L51/0516 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0545 ,  Y10S977/842 ,  Y10S977/938 ,  Y10S977/94

公开(公告)号：EP1759422A4

公开(公告)日：2011-04-06

申请号：EP05755193

申请日：2005-06-02

申请人： UNIV ILLINOIS

发明人： NUZZO RALPH G ,  ROGERS JOHN A ,  MENARD ETIENNE ,  LEE KEON JAE ,  KHANG DAHL-YOUNG ,  SUN YUGANG ,  MEITL MATTHEW ,  ZHU ZHENGTAO

IPC分类号： H01L21/20 ,  B81C1/00 ,  H01L21/02 ,  H01L21/30 ,  H01L21/326 ,  H01L21/4763 ,  H01L21/77 ,  H01L23/48 ,  H01L27/01 ,  H01L29/06 ,  H01L29/08 ,  H01L29/786 ,  H01L31/0312 ,  H01L31/18

CPC分类号： H01L23/02 ,  B81C2201/0185 ,  B82Y10/00 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02628 ,  H01L21/308 ,  H01L21/322 ,  H01L21/6835 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/29 ,  H01L24/32 ,  H01L24/80 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0753 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/04 ,  H01L29/06 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/12 ,  H01L29/76 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/78696 ,  H01L31/0392 ,  H01L31/03926 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1896 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/32 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/03 ,  H01L2224/0332 ,  H01L2224/0345 ,  H01L2224/03614 ,  H01L2224/0362 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/08225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/80 ,  H01L2224/80006 ,  H01L2224/80121 ,  H01L2224/80862 ,  H01L2224/80895 ,  H01L2224/83 ,  H01L2224/83005 ,  H01L2224/83121 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/8385 ,  H01L2224/83862 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2224/95 ,  H01L2224/97 ,  H01L2924/00012 ,  H01L2924/01032 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15159 ,  H01L2924/15162 ,  H01L2924/15788 ,  H01L2924/1579 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S977/707 ,  Y10S977/724 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

摘要翻译： 本发明提供了用于制造可印刷的半导体元件和组装可印刷的半导体元件到衬底上表面的方法和装置。 方法，设备和设备部件本发明的能够产生宽范围的柔性电子和光电子器件和基底包含聚合物材料上的设备的阵列。 本发明因此提供了可拉伸的半导体结构，并且能够在拉伸构型良好的性能可拉伸电子器件。

公开(公告)号：EP1714330B1

公开(公告)日：2011-04-06

申请号：EP05707994.9

申请日：2005-02-10

申请人： International Business Machines Corporation

发明人： FURUKAWA, Toshiharu ,  HAKEY, Mark, Charles ,  HOLMES, Steven, John ,  HORAK, David, Vaclav ,  KOBURGER, Charles, William, III ,  MITCHELL, Peter ,  NESBIT, Larry, Alan

IPC分类号： H01L51/05 ,  H01L51/30 ,  H01L29/772 ,  H01L21/335 ,  H01L29/06 ,  H01L29/12

CPC分类号： H01L51/057 ,  B82Y10/00 ,  G11C13/025 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/125 ,  H01L29/66409 ,  H01L29/772 ,  H01L51/0048 ,  Y10S977/734

摘要： A method for forming carbon nanotube field effect transistors, arrays of carbon nanotube field effect transistors, and device structures and arrays of device structures formed by the methods. The methods include forming a stacked structure including a gate electrode layer and catalyst pads each coupled electrically with a source/drain contact. The gate electrode layer is divided into multiple gate electrodes and at least one semiconducting carbon nanotube is synthesized by a chemical vapor deposition process on each of the catalyst pads. The completed device structure includes a gate electrode with a sidewall covered by a gate dielectric and at least one semi­conducting carbon nanotube adjacent to the sidewall of the gate electrode. Source/drain contacts are electrically coupled with opposite ends of the semiconducting carbon nanotube to complete the device structure. Multiple device structures may be configured either as a memory circuit or as a logic circuit.