公开(公告)号：EP3206228A1

公开(公告)日：2017-08-16

申请号：EP17152734.4

申请日：2017-01-24

申请人： Semtech Corporation

发明人： CHINNUSAMY, Satyamoorthi ,  TAN, Weng Hing ,  REYES, Jayson Nathaniel S.

IPC分类号： H01L23/498 ,  H01L21/48

CPC分类号： H01L23/66 ,  H01L21/4846 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/56 ,  H01L21/561 ,  H01L23/295 ,  H01L23/3121 ,  H01L23/498 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49844 ,  H01L23/642 ,  H01L23/645 ,  H01L23/647 ,  H01L24/16 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L2223/6661 ,  H01L2223/6677 ,  H01L2224/16227 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/4811 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/49052 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/15313 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/00012 ,  H01L2224/81 ,  H01L2224/85 ,  H01L2224/45099

摘要： A semiconductor device includes a substrate and a first conductive layer formed over a first surface of the substrate. The first conductive layer is patterned into a first portion of a first passive circuit element. The first conductive layer is patterned to include a first coiled portion. A second conductive layer is formed over a second surface of the substrate. The second conductive layer is patterned into a second portion of the first passive circuit element. The second conductive layer is patterned to include a second coiled portion exhibiting mutual inductance with the first coiled portion. A conductive via formed through the substrate is coupled between the first conductive layer and second conductive layer. A semiconductor component is disposed over the substrate and electrically coupled to the first passive circuit element. An encapsulant is deposited over the semiconductor component and substrate. The substrate is mounted to a printed circuit board.

摘要翻译： 一种半导体器件包括衬底和在衬底的第一表面上方形成的第一导电层。 第一导电层被图案化为第一无源电路元件的第一部分。 第一导电层被图案化以包括第一盘绕部分。 第二导电层形成在衬底的第二表面之上。 第二导电层被图案化为第一无源电路元件的第二部分。 第二导电层被图案化以包括与第一线圈部分呈现互感的第二线圈部分。 穿过衬底形成的导电通孔耦合在第一导电层和第二导电层之间。 半导体元件设置在衬底上并电耦合到第一无源电路元件。 密封剂沉积在半导体部件和衬底上。 基板安装在印刷电路板上。

公开(公告)号：EP3131117A1

公开(公告)日：2017-02-15

申请号：EP16182128.5

申请日：2016-08-01

申请人： Semtech Corporation

发明人： HO, Kok Khoon ,  CHINNUSAMY, Satyamoorthi

IPC分类号： H01L23/16

CPC分类号： H01L23/5389 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/4882 ,  H01L21/56 ,  H01L21/78 ,  H01L23/13 ,  H01L23/16 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/367 ,  H01L23/3675 ,  H01L23/433 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/50 ,  H01L23/5383 ,  H01L23/5385 ,  H01L23/5386 ,  H01L23/552 ,  H01L24/17 ,  H01L24/81 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L2223/6677 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/0557 ,  H01L2224/05573 ,  H01L2224/05575 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/13013 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16113 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/1713 ,  H01L2224/17181 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/80 ,  H01L2224/81201 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06537 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06555 ,  H01L2225/06582 ,  H01L2225/06589 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10322 ,  H01L2924/10324 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10335 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/1433 ,  H01L2924/14335 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/15156 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/3025 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/81

摘要： A semiconductor device has a first substrate. A conductive layer is formed over the first substrate. A first cavity is formed through the first substrate and extending to the conductive layer. A first semiconductor die including a plurality of first interconnect structures is disposed in the first cavity. A second substrate is disposed over the first substrate. A second cavity is formed through second substrate. A second semiconductor die including a plurality of second interconnect structures is disposed in the second cavity. A discrete device or third semiconductor die is disposed over the second semiconductor die. A plurality of third interconnect structures is formed between the second substrate and discrete device or third semiconductor die. The first, second, and third interconnect structures are reflowed simultaneously. An encapsulant is deposited over and around the first semiconductor die, the second semiconductor die, and the discrete device or third semiconductor die.

摘要翻译： 一种半导体器件具有第一衬底。 的导电层被形成在所述第一基底上。 第一腔体通过所述第一基片形成，并且延伸到所述导电层。 第一半导体包括第一互连结构的中的多个第一腔体被设置。 第二基板被设置在所述第一基底上。 的第二空腔，通过第二基片形成。 第二半导体包括第二互连结构的中的多个第二腔体被设置。 分立器件或第三半导体管芯设置在所述第二半导体那个。 第三互连结构中的多个设置在第二基底和分立器件或第三半导体那之间形成。 第一，第二和第三互连结构被同时回流。 密封剂沉积上方和周围的第一半导体是，所述第二半导体是，和分立器件或第三半导体那个。

公开(公告)号：EP3211670A1

公开(公告)日：2017-08-30

申请号：EP17152948.0

申请日：2017-01-25

申请人： Semtech Corporation

发明人： CHINNUSAMY, Satyamoorthi ,  SIMPSON, Kevin ,  COSTELLO, Mark C.

IPC分类号： H01L25/00

CPC分类号： H01L24/94 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/3114 ,  H01L24/03 ,  H01L24/06 ,  H01L2224/0331 ,  H01L2224/04105 ,  H01L2224/05561 ,  H01L2224/94 ,  H01L2224/03

摘要： A semiconductor device has a semiconductor wafer including a plurality of semiconductor die and a plurality of contact pads formed over a first surface of the semiconductor wafer. A trench is formed partially through the first surface of the semiconductor wafer. An insulating material is disposed over the first surface of the semiconductor wafer and into the trench. A conductive layer is formed over the contact pads. The conductive layer can be printed to extend over the insulating material in the trench between adjacent contact pads. A portion of the semiconductor wafer opposite the first surface of the semiconductor wafer is removed to the insulating material in the trench. An insulating layer is formed over a second surface of the semiconductor wafer and side surfaces of the semiconductor wafer. The semiconductor wafer is singulated through the insulating material in the first trench to separate the semiconductor die.

摘要翻译： 一种半导体器件具有半导体晶片，该半导体晶片包括多个半导体管芯和形成在该半导体晶片的第一表面上的多个接触焊盘。 沟槽部分穿过半导体晶片的第一表面形成。 绝缘材料设置在半导体晶片的第一表面上并进入沟槽。 导电层形成在接触垫上。 导电层可以被印刷以在相邻接触垫之间的沟槽中的绝缘材料上延伸。 与半导体晶片的第一表面相对的半导体晶片的一部分被去除到沟槽中的绝缘材料。 绝缘层形成在半导体晶片的第二表面和半导体晶片的侧表面上。 半导体晶片通过第一沟槽中的绝缘材料被分离以分离半导体管芯。