摘要:
Ein Adaptersystem zur Kontaktbereichsvergrößerung zumindest einer Kontaktoberfläche (11, 11a', 11b', 11c', 11d', 11e', 11f', 11") auf zumindest einem Elektronikbauteil (9, 9', 9") (z.B. einem Leistungshalbleiter) weist auf: zumindest ein Substrat (3, 3a', 3b', 3") mit einer ersten Seite und einer der ersten Seite gegenüberliegenden zweiten Seite; und zumindest ein Kontaktierungselement (5, 5a', 5"), das zumindest bereichsweise auf der ersten Seite des Substrats (3, 3a', 3b', 3") angeordnet ist, wobei das Kontaktierungselement (5, 5a', 5") angepasst ist, die erste Seite mit der Kontaktoberfläche (11, 11a', 11b', 11c', 11d', 11e', 11f', 11") des Elektronikbauteils (9, 9', 9") elektrisch zu verbinden, wobei eine Oberfläche der zweiten Seite des Substrats (3, 3a', 3b', 3") größer ist als die Kontaktoberfläche (11, 11a', 11b', 11c', 11d', 11e', 11") des Elektronikbauteils (9, 9', 9"). Das Adaptersystem kann weiter zumindest ein Fixierungselement (7, 7a', 7") aufweisen, das auf der ersten Seite des Substrats (3, 3a', 3b', 3") zumindest bereichsweise um das Kontaktierungselement (5, 5a', 5") herum angeordnet ist, wobei das Fixierungselement (7, 7a', 7") angepasst ist das Elektronikbauteil (9, 9', 9") mechanisch zu kontaktieren, insbesondere die erste Seite des Substrats (3, 3a', 3b', 3") mit dem Elektronikbauteil (9, 9', 9") mechanisch zu verbinden. Die zweite Seite des Substrats (3, 3a', 3b', 3") kann zum Verbinden mit einem Verbindungselement, insbesondere mit einem Bonddraht, angepasst sein. Das Substrat (3, 3a', 3b', 3") kann ein elektrisch leitendes Material aufweisen. Das Kontaktierungselement (5, 5a', 5") kann eine Sinterpaste aufweisen. Es können zumindest zwei Substrate (3a', 3b') zumindest bereichsweise auf dem Elektronikbauteil (9') angeordnet sein und/oder mindestens zwei Kontaktoberflächen (11b', 11c', 11d', 11e', 11f') mit einem einzelnen Kontaktierungselement (5, 5a', 5") elektrisch verbunden sein.
摘要:
A field effect transistor has a plurality of cells (52) provided on a first straight line (90). Each cell has a plurality of multi-finger electrodes and is connected to a gate terminal electrode (33) and a drain terminal electrode (53). The multi-finger electrode has at least two finger gate electrodes, a finger drain electrode, and a finger source electrode. The gate terminal electrode connects the finger gate electrodes of two adjoining cells in common. The drain terminal electrode connects the finger drain electrodes of two adjoining cells in common. The finger gate electrode of one cell of two adjoining cells and the finger gate electrode of another cell of the two adjoining cells cross perpendicularly. The gate terminal electrode and the drain terminal electrode are provided alternately in a region where the finger gate electrodes of the two adjoining cells cross.
摘要:
A leadframe-based CSP (50) comprises a leadframe (51) having a die attach pad (52) and a plurality of wire bonding pads (54), an aperture (65) disposed in the die attach pad (52), die (56) on the die attach pad, bonding wire(s) (58) electrically interconnecting the dies and the wire bonding pads, and a mold compound (60) which encapsulates the dies and the bonding wires to form the chip package (50) and which is formed in the aperture.
摘要:
A leadframe-based CSP (50) comprises a leadframe (51) having a die attach pad (52) and a plurality of wire bonding pads (54), an aperture (65) disposed in the die attach pad (52), die (56) on the die attach pad, bonding wire(s) (58) electrically interconnecting the dies and the wire bonding pads, and a mold compound (60) which encapsulates the dies and the bonding wires to form the chip package (50) and which is formed in the aperture.
摘要:
A microelectronic package (100) can include a plurality of vertically stacked semiconductor chips 632, 637, the front face of at least one chip facing away from a first substrate surface (108), one or more columns (138, 143) of contacts (132) extending in a first direction (142) along surface (108). Columns (104A, 107B, 109A, 109B) of terminals (105 107) exposed at a second substrate surface (110) extend in the first direction. First terminals (105) disposed in a central region (112) of surface (110) which has width (152) not more than three and one-half times a minimum pitch (150) of the columns of terminals can be configured to carry address information usable to determine an addressable memory location. An axial plane of the at least one semiconductor chip can intersect the central region.
摘要:
Techniques for fabricating analog and digital circuits on separate dies and stacking and integrating the dies within a single package to form a mixed-signal IC that provides many benefits. In one aspect, the analog and digital circuits are implemented on two separate dies using possibly different IC processes suitable for these different types of circuits. The analog and digital dies are thereafter integrated (stacked) and encapsulated within the single package. Bonding pads are provided to interconnect the dies and to connect the dies to external pins. The bonding pads maybe located and arranged in a manner to provide the required connectivity while minimizing the amount of die area required to implement the pads. In another aspect, the die-to-die connectivity may be tested in conjunction with a serial bus interface. are provided to interconnect the
摘要:
A microelectronic structure (100) has active elements (202) defining a memory storage array (204), and address inputs (206) for receipt of address information specifying locations within the storage array. The structure has a first surface (201) and can have terminals (104, 106) exposed at the first surface. The terminals may include first terminals (104) and the structure may be configured to transfer address information received at the first terminals to the address inputs. Each first terminal can have a signal assignment which includes one or more of the address inputs. The first terminals are disposed on first and second opposite sides of a theoretical plane (132) normal to the first surface, wherein the signal assignments of the first terminals disposed on the first side are a mirror image of the signal assignments of the first terminals disposed on the second side of the theoretical plane.
摘要:
A microelectronic package (100) can include a plurality of vertically stacked semiconductor chips 632, 637, the front face of at least one chip facing away from a first substrate surface (108), one or more columns (138, 143) of contacts (132) extending in a first direction (142) along surface (108). Columns (104A, 107B, 109A, 109B) of terminals (105 107) exposed at a second substrate surface (110) extend in the first direction. First terminals (105) disposed in a central region (112) of surface (110) which has width (152) not more than three and one-half times a minimum pitch (150) of the columns of terminals can be configured to carry address information usable to determine an addressable memory location. An axial plane of the at least one semiconductor chip can intersect the central region.
摘要:
A field effect transistor has a plurality of cells (52) provided on a first straight line (90). Each cell has a plurality of multi-finger electrodes and is connected to a gate terminal electrode (33) and a drain terminal electrode (53). The multi-finger electrode has at least two finger gate electrodes, a finger drain electrode, and a finger source electrode. The gate terminal electrode connects the finger gate electrodes of two adjoining cells in common. The drain terminal electrode connects the finger drain electrodes of two adjoining cells in common. The finger gate electrode of one cell of two adjoining cells and the finger gate electrode of another cell of the two adjoining cells cross perpendicularly. The gate terminal electrode and the drain terminal electrode are provided alternately in a region where the finger gate electrodes of the two adjoining cells cross.