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    Ceramic capacitor
    2.
    发明公开
    Ceramic capacitor 有权
    Keramikkondensator

    公开(公告)号：EP1761119A1

    公开(公告)日：2007-03-07

    申请号：EP06018353.0

    申请日：2006-09-01

    Applicant: NGK SPARK PLUG CO., LTD

    Inventor： Urashima, Kazuhiro ,  Yuri, Shinji ,  Sato, Manabu ,  Sugimoto, Yasuhiro

    IPC: H05K1/18 ,  H01G2/06 ,  H01G4/12

    CPC classification number: H05K1/185 ,  H01G2/06 ,  H01G4/385 ,  H01L23/49816 ,  H01L23/50 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/3025 ,  H05K1/0231 ,  H05K3/4602 ,  H05K2201/10045 ,  H05K2201/10674 ,  H05K2201/10712 ,  H01L2224/05599

    Abstract: A circuit board (10, 10", 10"') comprising: a board core (11) having a main core surface (12) and a rear core surface (13); a ceramic capacitor (101, 101', 101'', 101 "', 101'''', 101''''', 101'''''') having a main capacitor surface (102) and a rear capacitor surface (103), having a structure in which a first inner electrode layer (141) and a second inner electrode layer (142) are alternately stacked with a ceramic dielectric layer (105) interposed therebetween, and having a plurality of capacitor function units (107, 108) being electrically independent from each other, the ceramic capacitor (101, 101', 101'', 101 "', 101'''', 101''''', 101'''''') being buried in the board core (11) in a state where the main core surface (12) and the main capacitor surface (102) are directed in a same direction; and a buildup layer (31) having a structure in which an interlayer insulating layer (33, 35) and a conductor layer (42) are alternately stacked on the main core surface (12) and the main capacitor surface (102) and having a semiconductor integrated circuit device mounting region (23, 51, 52) for mounting a semiconductor integrated circuit device (21, 53, 54) having a plurality of processor cores (24, 25) on a surface (39) of the buildup layer (31), wherein the plurality of capacitor function units (107, 108) are capable of being electrically connected to the plurality of processor cores (24, 25), respectively.

    Abstract translation: 一种电路板（10,10“，10”'），包括：具有主芯表面（12）和后芯表面（13）的板芯（11）; 具有主电容器表面（102）和后电容器（102）的陶瓷电容器（101,101'，101“，101”'，101“，101”'，101“'，101”'，101“ 表面（103）具有其中第一内电极层（141）和第二内电极层（142）交替地层叠有陶瓷介电层（105）并且具有多个电容器功能单元（ 陶瓷电容器101,101'，101“，101”'，101“，101”'，101“'，101”'，101“'，101”'，101“'，101” 在主芯表面（12）和主电容器表面（102）指向相同方向的状态下埋在板芯（11）中; 以及具有其中层间绝缘层（33,35）和导体层（42）在主芯面（12）和主电容器表面（102）上交替层叠的结构的积层（31），并具有 半导体集成电路器件安装区域（23,51,52），用于安装在积聚层（31）的表面（39）上具有多个处理器核（24,25）的半导体集成电路器件（21,53,54） ），其中所述多个电容器功能单元（107,108）能够分别电连接到所述多个处理器核（24,25）。

    Amplifier with feedback bridge
    8.
    发明公开
    Amplifier with feedback bridge 有权
    VerstärkermitRückkopplungsbrückenschaltung

    公开(公告)号：EP1744604A1

    公开(公告)日：2007-01-17

    申请号：EP05291510.5

    申请日：2005-07-12

    Applicant: ALCATEL

    Inventor： Wiegner, Dirk ,  Merk, Thomas

    IPC: H05K1/02 ,  H03F3/19

    CPC classification number: H03F3/195 ,  H03F2200/144 ,  H03F2200/147 ,  H03F2200/451 ,  H05K1/0243 ,  H05K1/181 ,  H05K2201/10045 ,  H05K2201/10166 ,  H05K2201/10515 ,  H05K2201/1053 ,  Y02P70/611

    Abstract: An amplifier, in particular for RF-applications, comprises a circuit board (2), at least one amplifier stage with at least one transistor package (8) arranged on the circuit board (2), and a feedback path (12) around the at least one transistor package (8), said feedback path (12) comprising a feedback element (15) with at least one capactive (C) element for blocking the flow of direct current through the feedback path (12) and preferably further comprising at least one inductive (L) and/or resistive element (R). In order to reduce negative effects on the performance of the amplifier due to long printed feedback lines, the feedback path (12) in an amplifier according to the invention is formed of a feedback bridge (9) comprising two feedback lines (13, 14) extending out of the plane of the circuit board (2) from two contact flags (10, 11) of the transistor package (8), and the feedback element (15) bridging over the transistor package (8) between the two feedback lines (13, 14).

    Abstract translation: 特别是用于射频应用的放大器包括电路板（2），至少一个具有布置在电路板（2）上的至少一个晶体管封装（8）的放大器级，以及围绕 至少一个晶体管封装（8），所述反馈路径（12）包括具有至少一个负载（C）元件的反馈元件（15），用于阻断通过所述反馈路径（12）的直流电流，并且优选地还包括： 至少一个电感（L）和/或电阻元件（R）。 为了减少由于长的印刷反馈线引起的放大器的性能的负面影响，根据本发明的放大器中的反馈路径（12）由包括两个反馈线（13,14）的反馈桥（9）形成， 从晶体管封装（8）的两个接触标记（10,11）延伸出电路板（2）的平面，并且反馈元件（15）跨接在两个反馈线之间的晶体管封装（8）上 13,14）。

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