公开(公告)号：JP2007012776A

公开(公告)日：2007-01-18

申请号：JP2005189915

申请日：2005-06-29

申请人： Nippon Steel Materials Co Ltd ,  新日鉄マテリアルズ株式会社

发明人： UNO TOMOHIRO ,  YAMAMOTO YUKIHIRO

IPC分类号： H01L21/60

CPC分类号： H01L2224/05624 ,  H01L2224/43 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43826 ,  H01L2224/43827 ,  H01L2224/45 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/456 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4851 ,  H01L2224/48839 ,  H01L2224/85045 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/00012

摘要： PROBLEM TO BE SOLVED: To provide a copper bonding wire for semiconductor device which is inexpensive in material costs and excellent in ball bonding properties, wedge bonding properties, loop control, and chip damage for semiconductors or the like for large diameters for power IC applications giving priority to low costs.
SOLUTION: The bonding wire includes a core material containing copper as a major component, and an outer skin layer provided on the core material and containing conductive metal with a different composition from those of the core material and copper as major component. The bonding wire for semiconductor device is characterized in that the thickness of the outer skin layer is ≤0.01 μm, and the thickness of a region which has concentration gradient of the conductive metal in the direction of a wire diameter in the outer skin layer is ≤0.01 μm.
COPYRIGHT: (C)2007,JPO&INPIT

摘要翻译： 要解决的问题：提供一种用于半导体装置的铜接合线，其材料成本低廉，球接合性能优异，楔形接合性能，环路控制和用于大直径电力的半导体等的芯片损坏 IC应用优先考虑低成本。 解决方案：接合线包括含有铜作为主要成分的芯材，以及设置在芯材上的外表层，并且包含与芯材和铜作为主要成分的不同组成的导电金属。 用于半导体器件的接合线的特征在于外皮层的厚度≤0.01μm，并且导电金属在外皮层的线径方向上具有浓度梯度的区域的厚度≤ 0.01μm。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006229202A

公开(公告)日：2006-08-31

申请号：JP2006001174

申请日：2006-01-06

申请人： Nippon Steel Corp ,  新日本製鐵株式会社

发明人： KIMURA KEIICHI ,  UNO TOMOHIRO

IPC分类号： H01L21/60

CPC分类号： B23K35/0261 ,  B23K35/3013 ,  C22C5/02 ,  C22F1/14 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/0106 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01065 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/01205 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/01013 ,  H01L2924/01004 ,  H01L2924/01062 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/01003 ,  H01L2924/01039 ,  H01L2924/01069 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2224/48 ,  H01L2924/01006

摘要： PROBLEM TO BE SOLVED: To provide gold wires for semiconductor device connection having a high strength and high bonding properties.
SOLUTION: As the base in which praseodymium is contained in the range of no less than 0.0004 mass% and no more than 0.02 mass%, the metal wire for semiconductor device connection contains beryllium or aluminum, or both, in a limited range taking the bonding properties into consideration, and contains calcium, lanthanum, cerium, neodymium, and samarium in a limited range as auxiliary additive elements further taking into consideration the intermetallic compound generated in the metal wire. Due to this, compared to the case where other rare earth elements are used, it is made possible to improve the strength of the metal wire with a smaller amount of additives.
COPYRIGHT: (C)2006,JPO&NCIPI

摘要翻译： 要解决的问题：提供具有高强度和高粘合性能的用于半导体器件连接的金线。 解决方案：作为镨含量在不小于0.0004质量％且不超过0.02质量％的范围内的基底，用于半导体器件连接的金属线包含铍或铝或两者在有限的范围内 考虑到粘合性质，并且在有限的范围内含有作为辅助添加剂元素的钙，镧，铈，钕和钐，还考虑金属丝中产生的金属间化合物。 因此，与使用其它稀土元素的情况相比，可以用较少量的添加剂来提高金属丝的强度。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006190763A

公开(公告)日：2006-07-20

申请号：JP2005000638

申请日：2005-01-05

申请人： Nippon Steel Corp ,  新日本製鐵株式会社

发明人： UNO TOMOHIRO ,  YAMAMOTO YUKIHIRO

IPC分类号： H01L21/60

CPC分类号： H01L2224/05624 ,  H01L2224/43 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43848 ,  H01L2224/45 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/456 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45673 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2224/85469 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/01203 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/01204 ,  H01L2224/45657 ,  H01L2224/45671 ,  H01L2224/45666 ,  H01L2224/48824 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/20755 ,  H01L2924/00012

摘要： PROBLEM TO BE SOLVED: To provide a bonding wire improving moldability, and connection of a ball having good loop controllability, improving adhesion strength for wedge connection, securing industrial productivity, and mainly comprising copper less expensive than a gold wire. SOLUTION: The bonding wire for a semiconductor device has a core mainly made of copper and a surface layer formed on the core and made of conductive metal with a composition different from that of the core. The dominant component of the surface layer comprises two or more kinds selected among gold, palladium, platinum, rhodium, silver and nickel. The bonding wire is characterized by a concentration gradient of one or both of the dominant component metal and copper observed in the radial direction of the wire in the surface layer. COPYRIGHT: (C)2006,JPO&NCIPI

摘要翻译： 要解决的问题：提供一种改善成型性的接合线以及具有良好的环路控制性的球的连接，提高楔形连接的粘合强度，确保工业生产率，并且主要包括比金线便宜的铜。 解决方案：用于半导体器件的接合线具有主要由铜制成的芯和形成在芯上并由与芯的组成不同的导电金属制成的表面层。 表层的主要成分包括选自金，钯，铂，铑，银和镍中的两种以上。 接合线的特征在于在表面层中的线的径向方向上观察到的主要成分金属和铜中的一种或两种的浓度梯度。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP3779817B2

公开(公告)日：2006-05-31

申请号：JP13133998

申请日：1998-04-24

申请人： タツタ電線株式会社

发明人： 兼造 井手 ,  正憲 時田

IPC分类号： C22C5/02 ,  H01L21/60

CPC分类号： C22C5/02 ,  H01L2224/43 ,  H01L2224/45 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45644 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/20752 ,  H01L2924/01032 ,  H01L2924/01062 ,  H01L2924/013 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2924/01204 ,  H01L2924/00013 ,  H01L2924/00012

公开(公告)号：JP3764629B2

公开(公告)日：2006-04-12

申请号：JP2000120333

申请日：2000-04-21

申请人： 新日本製鐵株式会社

发明人： 智裕 宇野 ,  晋一 寺嶋 ,  宏平 巽

IPC分类号： H01L21/60

CPC分类号： H01L24/05 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/45 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48 ,  H01L2224/48455 ,  H01L2224/4847 ,  H01L2224/48491 ,  H01L2224/48624 ,  H01L2224/85 ,  H01L2224/85051 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/00014 ,  H01L2924/01202 ,  H01L2924/01204 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/00012

摘要： PROBLEM TO BE SOLVED: To ensure a bondability and a long-term reliability superior in the wedge bond of a gold wire with an electrode film suited for narrowing the pitch of electrodes. SOLUTION: For wedge-bonding a gold alloy boding wire 1 onto an electrode film 3, the relation of the minimum value D of a wire compression bond thickness at its bond zone to the electrode film thickness (t) is set for 4t+2

摘要翻译： 要解决的问题：为了确保金线与适合于缩小电极间距的电极膜的楔形键合的粘结性和长期可靠性。 解决方案：为了将金合金编织线1楔入电极膜3，将其接合区的线压接合厚度的最小值D与电极膜厚度（t）的关系设定为4t + 2 < = D（μm）。 为了将接合线1楔入到形成在电极膜3上的金属凸块2上，凸块2的高度H设定为2t + 2 <= H <= 6t + 50（μm）。

公开(公告)号：JP3731556B2

公开(公告)日：2006-01-05

申请号：JP2002083030

申请日：2002-03-25

申请人： 住友金属鉱山株式会社

发明人： 雅夫 内藤 ,  亮 富樫 ,  清貴 岸

IPC分类号： H01F41/06 ,  H01L21/60

CPC分类号： H01L2224/45 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/78 ,  H01L2224/786 ,  H01L2224/85 ,  H01L2224/851 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01204 ,  H01L2924/19043 ,  H01L2924/20752 ,  H01L2224/48 ,  H01L2924/00012 ,  H01L2924/00

摘要： PROBLEM TO BE SOLVED: To provide a conductive plastic spool whose coefficient of thermal expansion is almost equal to that of a bonding wire and which does not cause troubles due to breakage and elasticity deformation. SOLUTION: The spool is formed of a carbon-fiber reinforced thermoplastic resin whose impact strength at room temperature is 80 J/m or more, flexural modulus is 9 GPa or more, volume resistivity is 1×10 3 Ωcm or less and linear expansion coefficient is 1.0×10 -5 to 2.8×10 -5 K -1 . COPYRIGHT: (C)2004,JPO

摘要翻译： 要解决的问题：提供一种导热塑料线轴，其热膨胀系数几乎等于接合线的热膨胀系数，并且不会由于断裂和弹性变形而引起麻烦。 解决方案：卷轴由碳纤维增强热塑性树脂形成，其室温下的冲击强度为80J / m以上，挠曲模量为9GPa以上，体积电阻率为1×10 3 < / SP>Ωcm以下，线膨胀系数为1.0×10 -5 至2.8×10 -5 K -1 。 版权所有（C）2004，JPO

公开(公告)号：JP2005294874A

公开(公告)日：2005-10-20

申请号：JP2005197314

申请日：2005-07-06

申请人： Nippon Steel Corp ,  新日本製鐵株式会社

发明人： UNO TOMOHIRO ,  TERAJIMA SHINICHI ,  TATSUMI KOHEI

IPC分类号： H01L21/60

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/45 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48 ,  H01L2224/48455 ,  H01L2224/4847 ,  H01L2224/48475 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/85051 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01202 ,  H01L2924/01204 ,  H01L2924/10253 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/00012

摘要： PROBLEM TO BE SOLVED: To ensure superior bondability and long period reliability in wedge bonding between a gold wire suitable for narrow pitch and an electrode film. SOLUTION: If a metal bump 2 is formed on an electrode film 3, and a gold alloy bonding wire 1 is wedge-bonded on the metal bump 2, the height H of the bump 2 is made to meet the relation: 2t+2≤H≤6t+50 (μm). Furthermore, the relation between the length S of the bump in the vertical direction, with respect to the wire bonding direction, the length L of the bump in the parallel direction with respect to the wire bonding direction, and the wire diameter W, are such that 1.3W≤S≤4W, and 1.5W≤L≤5W. By bonding via a metal bump having a suitable height and shape, it provides a semiconductor device which has superior narrow pitch bondability than the conventional ball bonding, as well as high long-term reliability. COPYRIGHT: (C)2006,JPO&NCIPI

摘要翻译： 要解决的问题：为了确保适合于窄间距的金线和电极膜之间的楔形结合中的优异的粘合性和长期可靠性。 解决方案：如果在电极膜3上形成金属凸块2，并且将金合金接合线1楔合在金属凸块2上，则使凸块2的高度H满足以下关系：2t +2≤H≤6t+ 50（μm）。 而且，相对于引线键合方向，凸块在垂直方向上的长度S，凸块在相对于引线接合方向的平行方向上的长度L和线径W之间的关系是这样的 1.3W≤S≤4W，1.5W≤L≤5W。 通过经由具有合适的高度和形状的金属凸块进行结合，它提供了一种半导体器件，该半导体器件具有优于传统球形焊接的窄间距结合能力以及高的长期可靠性。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP3657087B2

公开(公告)日：2005-06-08

申请号：JP20690397

申请日：1997-07-31

申请人： 田中電子工業株式会社

发明人： 光吉 石井 ,  照夫 菊池

IPC分类号： H01L21/60

CPC分类号： H01L2224/05624 ,  H01L2224/43 ,  H01L2224/45 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48455 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/78301 ,  H01L2224/78313 ,  H01L2224/85181 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01063 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01204 ,  H01L2924/01205 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/01032 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/00012

摘要： PROBLEM TO BE SOLVED: To make a gold alloy wire correspond to a high-density wiring and also to raise the high-temperature bonding strength of the gold alloy wire by a method, wherein the purity and tensile strength of the gold of the gold alloy wire are respectively set at a specified or higher and the extensibility of the gold is set in a specified range. SOLUTION: A specified amount of Ca is added to high-purity gold and, moreover, at least one kind of an element out of Mg, Y, La, Eu, Ge, Ag, Pt and Be is preferably added to the high-purity gold, the extensibility of the gold is made small and the tensile strength of the gold is made large. As raw high-purity gold, high-purity gold refined at least 99.99wt.% or higher, at preferably 99.995wt.% or higher and at most preferably 99.999wt.% or higher is used. The content of the Ca is set at 1 to 100 wt.ppm under the conditions of a specified gold purity extensibility and a specified gold purity tensile strength. The content of the Ca is preferably 1 to 50 wt.ppm. The extensibility is set at 1 to 3%. The extensibility is preferably 2 to 3%. The tensile strength is set in 33.0kg/mm or higher. The tensile strength is preferably 33.0 to 70.0kg/mm or higher and is most preferably 39.1 to 63.0kg/mm .

摘要翻译： 要解决的问题：为了使金合金线对应于高密度布线，并且还通过一种方法提高金合金线的高温接合强度，其中金合金的金的纯度和拉伸强度 电线分别设定为规定值以上，金的伸长率设定在规定范围内。 解决方案：向高纯度金添加规定量的Ca，此外，优选将Mg，Y，La，Eu，Ge，Ag，Pt和Be中的至少一种元素加入高纯度 金，金的延展性变小，金的拉伸强度变大。 作为原料高纯度金，使用至少99.99重量％以上的高纯度金，优选为99.995重量％以上，最优选为99.999重量％以上。 在规定的金纯度延伸性和规定的金纯度拉伸强度的条件下，Ca的含量为1〜100重量ppm。 Ca的含量优选为1〜50重量ppm。 可扩展性设置为1％至3％。 延展性优选为2〜3％。 拉伸强度设定在33.0kg / mm 2以上。 拉伸强度优选为33.0〜70.0kg / mm 2以上，最优选为39.1〜63.0kg / mm 2。

公开(公告)号：JP3641231B2

公开(公告)日：2005-04-20

申请号：JP2001332075

申请日：2001-10-30

申请人： 新日本製鐵株式会社

发明人： 智裕 宇野 ,  晋一 寺嶋

IPC分类号： H01L23/29 ,  H01L21/60 ,  H01L23/31

CPC分类号： H01L2224/05624 ,  H01L2224/43 ,  H01L2224/43848 ,  H01L2224/45 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48624 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01065 ,  H01L2924/01066 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/01035 ,  H01L2224/48824 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/00012

公开(公告)号：JP2005026251A

公开(公告)日：2005-01-27

申请号：JP2003186623

申请日：2003-06-30

申请人： National Institute Of Advanced Industrial & Technology ,  Tanaka Kikinzoku Kogyo Kk ,  独立行政法人産業技術総合研究所 ,  田中貴金属工業株式会社

发明人： KOGASHIWA TOSHINORI ,  AOYANAGI MASAHIRO ,  NAKAGAWA HIROSHI ,  KIKUCHI KATSUYA

IPC分类号： H01L21/60

CPC分类号： H01L2223/6622 ,  H01L2224/05624 ,  H01L2224/45 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/78 ,  H01L2224/85 ,  H01L2224/85009 ,  H01L2224/85099 ,  H01L2224/85148 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/20756 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01204 ,  H01L2924/00012

摘要： PROBLEM TO BE SOLVED: To provide a method of bonding semiconductor connecting coaxial bonding wire by which the coaxial bonding wire of a semiconductor device obtained by coating a conductive wire with an insulating layer and a conductor layer can be bonded more easily to an electrode.
SOLUTION: After the coaxial bonding wire 10 is set on a bonding tool 20, an electric torch 21 is disposed to face the wire 10, and arcs 22 are generated between the wire 10 and the torch 21. Then, after the conductive wire 11 is exposed by removing the metallic conductor layer and insulating layer 12 by causing arc discharge, the conductive wire 11 of the coaxial boding wire 10 is bonded to the electrode 31 provided on a semiconductor chip 30 by wedge bonding while the conductive wire 11 is brought into contact with the electrode 31 by means of the bonding tool 20.
COPYRIGHT: (C)2005,JPO&NCIPI

摘要翻译： 要解决的问题：提供一种接合半导体连接同轴接合线的方法，通过该方法可以将通过将导线涂覆绝缘层和导体层获得的半导体器件的同轴接合线更容易地接合到 电极。 解决方案：将同轴接合线10设置在接合工具20上之后，将电炬21设置成与电线10相对，并且在电线10和焊炬21之间产生电弧22。 通过使电弧放电去除金属导体层12和绝缘层12而使导线11露出，同轴布线10的导线11通过楔形接合而与设在半导体芯片30上的电极31接合，而导线11 通过粘合工具20与电极31接触。版权所有（C）2005，JPO＆NCIPI