专利检索 cpc:"H01L2224/45647" 第 1 页

1.

发明专利
Bonding wire for semiconductor device 有权
标题翻译：空值

公开(公告)号：JP5393614B2

公开(公告)日：2014-01-22

申请号：JP2010174551

申请日：2010-08-03

申请人： 新日鉄住金マテリアルズ株式会社

发明人： 智裕宇野 , 幸弘山本

IPC分类号： H01L21/60

CPC分类号： H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05664 , H01L2224/43 , H01L2224/4321 , H01L2224/43848 , H01L2224/45 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45639 , H01L2224/45644 , H01L2224/45647 , H01L2224/45655 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/48247 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48664 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/85439 , H01L2224/85444 , H01L2224/85469 , H01L2924/00011 , H01L2924/00015 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/0102 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/01327 , H01L2924/10253 , H01L2224/48824 , H01L2924/00 , H01L2924/013 , H01L2924/2076 , H01L2924/20759 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/00013 , H01L2924/00012 , H01L2924/01203

2.

发明专利
Semiconductor bonding wire 有权

公开(公告)号：JP5349383B2

公开(公告)日：2013-11-20

申请号：JP2010066860

申请日：2010-03-23

申请人： 新日鉄住金マテリアルズ株式会社

发明人： 智裕宇野 , 晋一寺嶋 , 宏平巽

IPC分类号： H01L21/60 , B21C37/04 , B32B15/01 , C22C5/02 , C22C5/04 , C22C5/06 , C22C5/08 , C22C9/00 , C22C9/02 , C22C21/02 , H01L23/49

CPC分类号： C22C5/02 , B21C37/042 , B23K35/0272 , B23K2201/40 , B32B15/018 , C22C5/04 , C22C5/06 , C22C5/08 , C22C9/00 , C22C9/02 , C22C21/02 , H01L24/43 , H01L2224/05624 , H01L2224/05647 , H01L2224/43848 , H01L2224/45 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45169 , H01L2224/45565 , H01L2224/45572 , H01L2224/45624 , H01L2224/45639 , H01L2224/45644 , H01L2224/45647 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/48227 , H01L2224/48247 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48664 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48764 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48864 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/85948 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01007 , H01L2924/01012 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01078 , H01L2924/01079 , H01L2924/01105 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204 , H01L2924/01327 , H01L2924/10253 , H01L2924/20751 , H01L2924/3862 , H01L2924/01046 , H01L2924/0102 , H01L2924/01049 , H01L2924/00015 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/01013 , H01L2924/00014 , H01L2924/01057 , H01L2924/01058 , H01L2924/01024 , H01L2924/01039 , H01L2924/01026 , H01L2224/4516 , H01L2224/45155 , H01L2924/00 , H01L2924/013 , H01L2924/01006 , H01L2924/00012 , H01L2924/01033

摘要： A bonding wire for a semiconductor device has a core wire and a periphery comprising a conductive metal mainly composed of an element common to both and/or an alloy or alloys of said metal and, between the core wire and the periphery, a diffusion layer or an intermetallic compound layer composed of the elements constituting the core wire and the periphery and a bonding wire for a semiconductor device characterized by having a core wire comprising a first conductive metal or an alloy mainly composed of the first conductive metal, a periphery comprising a second conductive metal different from the first conductive metal of the core wire or an alloy mainly composed of the second conductive metal, and, between the core wire and the periphery, a diffusion layer or an intermetallic compound layer and a method of producing the same.

3.

发明专利
Polymer core wire and method for producing the same 审中-公开
标题翻译：聚合物芯线及其制造方法

公开(公告)号：JP2012069512A

公开(公告)日：2012-04-05

申请号：JP2011167168

申请日：2011-07-29

申请人： Freescale Semiconductor Inc , フリースケールセミコンダクターインコーポレイテッド

发明人： LO WAI YEW , YIT MENG LEE , LAN CHU TAN

IPC分类号： H01B5/02 , H01B13/00 , H01L21/60

CPC分类号： H01L24/745 , H01L24/43 , H01L24/45 , H01L2224/43 , H01L2224/45015 , H01L2224/451 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/4519 , H01L2224/45193 , H01L2224/45565 , H01L2224/45572 , H01L2224/456 , H01L2224/45624 , H01L2224/45644 , H01L2224/45647 , H01L2224/45655 , H01L2224/45664 , H01L2224/745 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2224/48 , H01L2924/20759 , H01L2924/2076 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/00015 , H01L2924/2075 , H01L2924/20754

摘要： PROBLEM TO BE SOLVED: To provide a wire improved in strength against bending and breakage even if the wire is thin.SOLUTION: The wire capable of conducting an electrical current includes a polymer core and a coating layer surrounding the core. The coating layer may be, for example, gold or copper and conducts an electrical current. The core has strength so that the wire is capable of withstanding against bending and breakage. In particular, the polymer core wire is useful for connecting an integrated circuit to a lead frame or a substrate.

摘要翻译： 要解决的问题：即使电线较薄，也提供了抗弯曲和断裂强度提高的电线。解决方案：能够传导电流的导线包括聚合物芯和围绕芯的涂层。涂层可以是例如金或铜并且传导电流。芯具有强度，使得电线能够抵抗弯曲和断裂。特别地，聚合物芯线可用于将集成电路连接到引线框架或基板。版权所有（C）2012，JPO＆INPIT

4.

发明专利
The power semiconductor device 有权

公开(公告)号：JP4795471B2

公开(公告)日：2011-10-19

申请号：JP2010034284

申请日：2010-02-19

申请人： 新日本製鐵株式会社

发明人： 芳生平野

IPC分类号： H01L23/48

CPC分类号： H01L24/48 , H01L24/05 , H01L24/33 , H01L24/45 , H01L24/83 , H01L24/85 , H01L2224/04042 , H01L2224/29111 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45184 , H01L2224/45565 , H01L2224/45647 , H01L2224/4847 , H01L2224/48491 , H01L2224/48599 , H01L2224/48699 , H01L2224/73265 , H01L2224/83205 , H01L2224/85205 , H01L2924/0001 , H01L2924/00014 , H01L2924/00015 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/10254 , H01L2924/10272 , H01L2924/1033 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13063 , H01L2924/13091 , H01L2924/20751 , H01L2924/351 , H01L2224/05556 , H01L2924/3512 , H01L2924/00 , H01L2224/29099 , H01L2224/45147 , H01L2924/00012 , H01L2924/2075

5.

发明专利
Bonding wire for semiconductor device 有权
标题翻译：用于半导体器件的接合线

公开(公告)号：JP2006190763A

公开(公告)日：2006-07-20

申请号：JP2005000638

申请日：2005-01-05

申请人： Nippon Steel Corp , 新日本製鐵株式会社

发明人： UNO TOMOHIRO , YAMAMOTO YUKIHIRO

IPC分类号： H01L21/60

CPC分类号： H01L2224/05624 , H01L2224/43 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43848 , H01L2224/45 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/456 , H01L2224/45639 , H01L2224/45644 , H01L2224/45647 , H01L2224/45655 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/48227 , H01L2224/48247 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/85439 , H01L2224/85444 , H01L2224/85447 , H01L2224/85455 , H01L2224/85464 , H01L2224/85469 , H01L2924/00011 , H01L2924/00015 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/0102 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/01203 , H01L2924/01327 , H01L2924/10253 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/01204 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2224/48824 , H01L2924/00 , H01L2924/013 , H01L2924/00013 , H01L2924/20755 , H01L2924/00012

摘要： PROBLEM TO BE SOLVED: To provide a bonding wire improving moldability, and connection of a ball having good loop controllability, improving adhesion strength for wedge connection, securing industrial productivity, and mainly comprising copper less expensive than a gold wire. SOLUTION: The bonding wire for a semiconductor device has a core mainly made of copper and a surface layer formed on the core and made of conductive metal with a composition different from that of the core. The dominant component of the surface layer comprises two or more kinds selected among gold, palladium, platinum, rhodium, silver and nickel. The bonding wire is characterized by a concentration gradient of one or both of the dominant component metal and copper observed in the radial direction of the wire in the surface layer. COPYRIGHT: (C)2006,JPO&NCIPI

摘要翻译： 要解决的问题：提供一种改善成型性的接合线以及具有良好的环路控制性的球的连接，提高楔形连接的粘合强度，确保工业生产率，并且主要包括比金线便宜的铜。解决方案：用于半导体器件的接合线具有主要由铜制成的芯和形成在芯上并由与芯的组成不同的导电金属制成的表面层。表层的主要成分包括选自金，钯，铂，铑，银和镍中的两种以上。接合线的特征在于在表面层中的线的径向方向上观察到的主要成分金属和铜中的一种或两种的浓度梯度。版权所有（C）2006，JPO＆NCIPI

6.

发明专利
Cu pad / Cu wire bonded using self-passivating Cu alloy 有权

公开(公告)号：JP2004517498A

公开(公告)日：2004-06-10

申请号：JP2002555483

申请日：2001-11-14

申请人： インフィネオンテクノロジーズノースアメリカコーポレイション

发明人： ヨアヒムバース，ハンス

IPC分类号： H01L21/60 , H01L23/485 , H01L23/49

CPC分类号： H01L24/85 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05006 , H01L2224/05073 , H01L2224/05546 , H01L2224/05556 , H01L2224/05624 , H01L2224/05647 , H01L2224/45124 , H01L2224/45147 , H01L2224/45565 , H01L2224/45647 , H01L2224/48463 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48764 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48864 , H01L2224/84539 , H01L2224/84544 , H01L2224/84564 , H01L2224/85011 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/85564 , H01L2224/85948 , H01L2924/00011 , H01L2924/01005 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/014 , H01L2924/05042 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/01003 , H01L2924/00014 , H01L2224/78 , H01L2224/48824 , H01L2924/00 , H01L2924/013 , H01L2924/01006

摘要： 本発明は、集積回路構造中のＣｕパッドとＣｕワイヤ部材とを接着したワイヤの改善に関するものである。上記ＣｕパッドＣｕワイヤ部材とは、自己不動態化、低抵抗、高接着力、および、酸化および腐食に対する抵抗力の改善を特徴としている。ＣｕパッドＣｕワイヤ部材は、メタライゼーション配線と、メタライゼーション配線とＣｕパッドを取り囲むＣｕ合金とを分かつ下地膜と、下地膜を取り囲む誘電体と、Ｃｕ合金ワイヤに接着したＣｕパッドとを含んでいる。Ｃｕワイヤ部材は、ａ）Ｃｕ合金と下地膜との間のドーパントリッチ境界面、ｂ）Ｃｕパッドの表面、ｃ）ＣｕパッドとＣｕ合金ワイヤとの間の接着面、および、ｄ）Ｃｕ合金ワイヤの表面に位置する、自己不動態化領域を特徴としている。

7.

发明专利
Semiconductor device 失效
标题翻译：半导体器件

公开(公告)号：JPS5958833A

公开(公告)日：1984-04-04

申请号：JP16939282

申请日：1982-09-28

申请人： Shinkawa Ltd

发明人： KOBAYASHI TOMIO

IPC分类号： H01L23/50 , H01L21/60

CPC分类号： H01L2224/45 , H01L2224/45147 , H01L2224/4554 , H01L2224/45647 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2924/00011 , H01L2924/01029 , H01L2924/01078 , H01L2924/01082 , H01L2924/01026 , H01L2924/00014 , H01L2924/013 , H01L2924/00 , H01L2924/00012 , H01L2924/01033

摘要： PURPOSE:To obtain a strong connection by selectively plating the wire connecting section of a lead frame made of Cu or Cu group alloy or Fe or an Fe group alloy with Cu. CONSTITUTION:The surface of base material itself made of Cu or a Cu group alloy or Fe or an Fe group alloy is hard, but its surface is changed into a soft material when the base material is plated with Cu. Since a wire is connected to the soft material section, adhesive strength is increased and the wire is not exfoliated, and the oxidation of the surface is prevented and connection is strengthened.

摘要翻译： 目的：通过选择性地电镀由Cu或Cu族合金或Fe或Fe基合金与Cu制成的引线框架的电线连接部分，以获得牢固的连接。构成：本体由Cu或Cu组合金或Fe或Fe基合金制成的基体材料的表面很硬，但是当基材镀有Cu时，其表面变为软质材料。由于线连接到软材料部分，所以粘合强度增加，并且线不会脱落，并且防止了表面的氧化并且连接得到加强。