利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

8 条记录 (耗时 0.012 秒)

    Semiconductor device
    1.
    发明专利
    Semiconductor device 审中-公开
    半导体器件

    公开(公告)号：JP2012160739A

    公开(公告)日：2012-08-23

    申请号：JP2012056972

    申请日：2012-03-14

    申请人： Renesas Electronics Corp ,  ルネサスエレクトロニクス株式会社

    发明人： AKIBA TOSHIHIKO ,  YASUMURA BUNJI ,  SATO NARIHISA ,  ABE HIROMI

    IPC分类号： H01L23/12 ,  H01L21/3205 ,  H01L21/66 ,  H01L21/768 ,  H01L23/522

    CPC分类号： H01L24/06 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/11 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/4941 ,  H01L2224/73265 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2924/00

    摘要： PROBLEM TO BE SOLVED: To provide technology for downsizing, especially for a narrow pitch of a semiconductor device.SOLUTION: A semiconductor device comprises a pad 2 provided on a semiconductor chip 1C, a passivation film 3 having an opening 11 on the pad 2 in a probe region 10A and a connection region 10B and provided on the semiconductor chip 1C, a passivation film 5 having an opening 12 on the pad 2 in the connection region 10B and provided on the pad 2 and the passivation film 3, and rewiring 7 electrically connected with the pad 2 and provided on the connection region 10B and the passivation film 5. A probe scar 100 is present on the pad 2 in the probe region 10A provided on the outer periphery side of the semiconductor chip 1C than the connection region 10B. The rewiring 7 is present extending from the connection region 10B to the center part side of the semiconductor chip 1C.

    摘要翻译： 要解决的问题：提供用于小型化的技术，特别是对于半导体器件的窄间距。 解决方案：半导体器件包括设置在半导体芯片1C上的焊盘2，在探针区域10A中的焊盘2上具有开口11的钝化膜3和设置在半导体芯片1C上的连接区域10B， 钝化膜5在连接区域10B中的焊盘2上具有开口12，并且设置在焊盘2和钝化膜3上，以及与焊盘2电连接并设置在连接区域10B和钝化膜5上的重新布线7。 探针疤痕100存在于设置在半导体芯片1C的外周侧的探针区域10A中的焊盘2上，而不是连接区域10B。 存在从连接区域10B延伸到半导体芯片1C的中心部分侧的再布线7。 版权所有（C）2012，JPO＆INPIT

    Semiconductor device
    2.
    发明专利
    Semiconductor device 审中-公开
    半导体器件

    公开(公告)号：JP2014140074A

    公开(公告)日：2014-07-31

    申请号：JP2014085372

    申请日：2014-04-17

    申请人： Toshiba Corp ,  株式会社東芝

    发明人： SANO YUICHI ,  IMOTO TAKASHI ,  TAKEBE NAOTO ,  ISHIDA KATSUHIRO ,  HONDA TOMOMI ,  KUMAGAI YASUSHI

    IPC分类号： H01L21/60 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18

    CPC分类号： H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48479 ,  H01L2224/4941 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85186 ,  H01L2924/00014 ,  H01L2224/48471 ,  H01L2224/4554

    摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device with a reduced amount of wires, a method of manufacturing the semiconductor device, and a manufacturing device for the semiconductor device.SOLUTION: There is provided a semiconductor device including a first semiconductor element 5, a first electrode 10, a second electrode 20, a ball portion 30, and a wire 40. The first electrode is electrically connected to the first semiconductor element 5. The ball portion is provided on the first electrode. The wire connects the ball portion and the second electrode. The thickness 41t of a folding portion 41 of the wire located on the opposite side of the second electrode is thinner than the diameter 40d of the wire.

    摘要翻译： 要解决的问题：提供一种半导体器件，其数量减少，半导体器件的制造方法和半导体器件的制造装置。提供一种半导体器件，包括第一半导体元件5， 第一电极10，第二电极20，球部30和导线40.第一电极电连接到第一半导体元件5.球部设置在第一电极上。 线连接球部和第二电极。 位于第二电极相反侧的线的折叠部41的厚度41t比线的直径40d薄。