公开(公告)号：US11476093B2

公开(公告)日：2022-10-18

申请号：US16704387

申请日：2019-12-05

Applicant: Applied Materials, Inc.

Inventor： Toan Q. Tran ,  Soonam Park ,  Zilu Weng ,  Dmitry Lubomirsky

IPC: H01J37/32

Abstract: An apparatus for plasma processing includes a first plasma source, a first planar electrode, a gas distribution device, a plasma blocking screen and a workpiece chuck. The first plasma source produces first plasma products that pass, away from the first plasma source, through first apertures in the first planar electrode. The first plasma products continue through second apertures in the gas distribution device. The plasma blocking screen includes a third plate with fourth apertures, and faces the gas distribution device such that the first plasma products pass through the plurality of fourth apertures. The workpiece chuck faces the second side of the plasma blocking screen, defining a process chamber between the plasma blocking screen and the workpiece chuck. The fourth apertures are of a sufficiently small size to block a plasma generated in the process chamber from reaching the gas distribution device.

公开(公告)号：US11361939B2

公开(公告)日：2022-06-14

申请号：US16448305

申请日：2019-06-21

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

IPC: H01J37/32 ,  C23C16/455

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define a central channel through the adapter. The adapter may define an exit from a second channel at the second end, and the adapter may define an exit from a third channel at the second end. The central channel, the second channel, and the third channel may each be fluidly isolated from one another within the adapter.

公开(公告)号：US11276559B2

公开(公告)日：2022-03-15

申请号：US15597973

申请日：2017-05-17

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

IPC: H01J37/32

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define a central channel through the adapter. The adapter may define an exit from a second channel at the second end, and the adapter may define an exit from a third channel at the second end. The central channel, the second channel, and the third channel may each be fluidly isolated from one another within the adapter.

公开(公告)号：US11195699B2

公开(公告)日：2021-12-07

申请号：US16459362

申请日：2019-07-01

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Toan Tran ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01J37/32

Abstract: A rotating microwave is established for any resonant mode TEmnl or TMmnl of a cavity, where the user is free to choose the values of the mode indices m, n and l. The fast rotation, the rotation frequency of which is equal to an operational microwave frequency, is accomplished by setting the temporal phase difference ΔØ and the azimuthal angle Δθ between two microwave input ports P and Q as functions of m, n and l. The slow rotation of frequency Ωa (typically 1-1000 Hz), is established by transforming dual field inputs α cos Ωat and ±α sin Ωat in the orthogonal input system into an oblique system defined by the angle Δθ between two microwave ports P and Q.

公开(公告)号：US20210189564A1

公开(公告)日：2021-06-24

申请号：US17176411

申请日：2021-02-16

Applicant: Applied Materials, Inc.

Inventor： Laksheswar Kalita ,  Soonam Park ,  Dmitry Lubomirsky ,  Tien Fak Tan ,  LokKee Loh ,  Saravjeet Singh ,  Tae Won Kim

IPC: C23C16/455 ,  C23C16/34 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/285 ,  C23C16/458

Abstract: Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.

公开(公告)号：US20190385823A1

公开(公告)日：2019-12-19

申请号：US16511990

申请日：2019-07-15

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Xinglong Chen ,  Kien Chuc ,  Dmitry Lubomirsky ,  Soonam Park ,  Jang-Gyoo Yang ,  Shankar Venkataraman ,  Toan Tran ,  Kimberly Hinckley ,  Saurabh Garg

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/50 ,  B05B1/18 ,  C23C16/455 ,  C23C16/452 ,  B05B1/00

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

公开(公告)号：US20190326099A1

公开(公告)日：2019-10-24

申请号：US16459362

申请日：2019-07-01

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Toan Tran ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01J37/32

Abstract: A rotating microwave is established for any resonant mode TEmnl or TMmnl of a cavity, where the user is free to choose the values of the mode indices m, n and l. The fast rotation, the rotation frequency of which is equal to an operational microwave frequency, is accomplished by setting the temporal phase difference ΔØ and the azimuthal angle Δθ between two microwave input ports P and Q as functions of m, n and l. The slow rotation of frequency Ωa (typically 1-1000 Hz), is established by transforming dual field inputs α cos Ωat and ±α sin Ωat in the orthogonal input system into an oblique system defined by the angle Δθ between two microwave ports P and Q.

公开(公告)号：US20190272999A1

公开(公告)日：2019-09-05

申请号：US15909812

申请日：2018-03-01

Applicant: Applied Materials, Inc.

Inventor： Tae Seung Cho ,  Soonwook Jung ,  Junghoon Kim ,  Satoru Kobayashi ,  Kenneth D. Schatz ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01L21/3213 ,  H01L21/67 ,  H01L21/3105 ,  H01J37/32 ,  H05H1/46

Abstract: Exemplary magnetic induction plasma systems for generating plasma products are provided. The magnetic induction plasma system may include a first plasma source including a plurality of first sections and a plurality of second sections arranged in an alternating manner and fluidly coupled with each other such that at least a portion of plasma products generated inside the first plasma source may circulate through at least one of the plurality of first sections and at least one of the plurality of second sections inside the first plasma source. Each of the plurality of second sections may include a dielectric material. The system may further include a plurality of first magnetic elements each of which may define a closed loop. Each of the plurality of second sections may define a plurality of recesses for receiving one of the plurality of first magnetic elements therein.

公开(公告)号：US20190259580A1

公开(公告)日：2019-08-22

申请号：US16400615

申请日：2019-05-01

Applicant: Applied Materials, Inc.

Inventor： Tae Seung Cho ,  Soonam Park ,  Junghoon Kim ,  Dmitry Lubomirsky ,  Shankar Venkataraman

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/311 ,  G01J3/02 ,  G01N21/73 ,  G01J3/443

Abstract: Methods and systems for etching substrates using a remote plasma are described. Remotely excited etchants are formed in a remote plasma and flowed through a showerhead into a substrate processing region to etch the substrate. Optical emission spectra are acquired from the substrate processing region just above the substrate. The optical emission spectra may be used to determine an endpoint of the etch, determine the etch rate or otherwise characterize the etch process. A weak plasma may be present in the substrate processing region. The weak plasma may have much lower intensity than the remote plasma. In cases where no bias plasma is used above the substrate in an etch process, a weak plasma may be ignited near a viewport disposed near the side of the substrate processing region to characterize the etchants.

公开(公告)号：US10032606B2

公开(公告)日：2018-07-24

申请号：US15187211

申请日：2016-06-20

Applicant: Applied Materials, Inc.

Inventor： Jang-Gyoo Yang ,  Xinglong Chen ,  Soonam Park ,  Jonghoon Baek ,  Saurabh Garg ,  Shankar Venkataraman

IPC: C23C16/503 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/285 ,  H01L21/311

CPC classification number: H01J37/32091 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5093 ,  H01J37/32146 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/67075

Abstract: Semiconductor processing systems are described including a process chamber. The process chamber may include a lid assembly, grid electrode, conductive insert, and ground electrode. Each component may be coupled with one or more power supplies operable to produce a plasma within the process chamber. Each component may be electrically isolated through the positioning of a plurality of insulation members. The one or more power supplies may be electrically coupled with the process chamber with the use of switching mechanisms. The switches may be switchable to electrically couple the one or more power supplies to the components of the process chamber.