公开(公告)号：US20240264336A1

公开(公告)日：2024-08-08

申请号：US18605667

申请日：2024-03-14

Applicant: APPLIED MATERIALS, INC.

Inventor： Alexander Berger ,  Cheng-Hsuan Chou ,  David Knapp

IPC: G02B1/14 ,  B05D1/00 ,  B05D7/22 ,  C23C16/04 ,  G02B3/00

CPC classification number: G02B1/14 ,  B05D1/60 ,  B05D7/22 ,  C23C16/045 ,  G02B3/00

Abstract: Described herein is a method of depositing a conformal, optically transparent coating onto a surface of one or more internal components that are enclosed within an assembled device including an optical encoder using a non-line-of-sight deposition process without altering a structure of the assembled device or impacting functionality of the assembled device. Also described is an assembled device including an optical encoder, where one or more internal components enclosed within the optical encoder and a coating deposited onto a surface of the internal components, where the coating is a conformal, optically transparent coating that is resistant to corrosion by at least one of fluorine-, chlorine-, sulfur-, hydrogen-, bromine-, or nitrogen-based acids and that does not negatively impact functionality of the internal components.

公开(公告)号：US09922872B2

公开(公告)日：2018-03-20

申请号：US15151612

申请日：2016-05-11

Applicant: Applied Materials, Inc.

Inventor： David Knapp ,  Jeffrey W. Anthis ,  Xinyu Fu ,  Srinivas Gandikota

IPC: H01L21/768 ,  H01L23/498 ,  H01L23/532 ,  H01L21/285

CPC classification number: H01L21/76876 ,  H01L21/28562 ,  H01L21/76877 ,  H01L23/49866 ,  H01L23/53266

Abstract: Processing methods comprising exposing a substrate to a nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal-containing compound and a second reactive gas to form a metal-containing film on the substrate.

公开(公告)号：US09916975B2

公开(公告)日：2018-03-13

申请号：US14919149

申请日：2015-10-21

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Ben-Li Sheu ,  David Knapp ,  David Thompson

IPC: H01L21/4763 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  C23C16/00 ,  H01L21/02 ,  C23C16/18 ,  H01L21/285 ,  H01L23/532 ,  H01L21/768 ,  C23C16/34

CPC classification number: H01L21/02271 ,  C23C16/18 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76873 ,  H01L23/53238

Abstract: Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.

公开(公告)号：US20190088489A1

公开(公告)日：2019-03-21

申请号：US16180817

申请日：2018-11-05

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  David Knapp ,  David Thompson ,  Jeffrey W. Anthis ,  Mei Chang

IPC: H01L21/285 ,  C23C16/08 ,  C23C16/455 ,  C23C16/06 ,  H01L29/786

Abstract: Processing methods comprising exposing a substrate to an optional nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal oxyhalide compound and a second reactive gas to form a metal film on the substrate.

公开(公告)号：US20160181150A1

公开(公告)日：2016-06-23

申请号：US14919149

申请日：2015-10-21

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Ben-Li Sheu ,  David Knapp ,  David Thompson

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/02271 ,  C23C16/18 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76873 ,  H01L23/53238

Abstract: Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.

Abstract translation: 描述了制造具有包含氮化锰的阻挡层的半导体器件的半导体器件和方法。 还描述了与包含Mn（N）和任选的粘合层的阻挡层相同的半导体器件和方法。

公开(公告)号：US20160032455A1

公开(公告)日：2016-02-04

申请号：US14815625

申请日：2015-07-31

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Ben-Li Sheu ,  David Thompson ,  Mei Chang ,  Paul F. Ma ,  David Knapp ,  Jeffrey W. Anthis ,  Annamalai Lakshmanan

IPC: C23C16/455 ,  C25D3/38 ,  C25D5/34 ,  C23C16/18 ,  C23C16/02

CPC classification number: C23C16/45553 ,  C23C16/045 ,  C23C16/18 ,  H01L21/28562 ,  H01L21/76873

Abstract: Methods of depositing a metal layer utilizing organometallic compounds. A substrate surface is exposed to a gaseous organometallic metal precursor and an organometallic metal reactant to form a metal layer (e.g., a copper layer) on the substrate.

Abstract translation: 利用有机金属化合物沉积金属层的方法。 衬底表面暴露于气态有机金属金属前体和有机金属金属反应物以在衬底上形成金属层（例如铜层）。

公开(公告)号：US20240128091A1

公开(公告)日：2024-04-18

申请号：US18221063

申请日：2023-07-12

Applicant: Applied Materials, Inc.

Inventor： Zhonghua Yao ,  Qian Fu ,  Mark J. Saly ,  Yang Yang ,  Jeffrey W. Anthis ,  David Knapp ,  Rajesh Sathiyanarayanan

IPC: H01L21/311 ,  H01L21/67

CPC classification number: H01L21/31144 ,  H01L21/31116 ,  H01L21/67069

Abstract: A method includes providing, within an etch chamber, a base structure including a target layer disposed on a substrate, and an etch mask disposed on the target layer, dry etching, within the etch chamber, the target layer using thionyl chloride to obtain a processed base structure, and after forming the plurality of features. The processed base structure includes a plurality of features and a plurality of openings defined by the etch mask. The method further includes removing the processed base structure from the etch chamber. In some embodiments, the target layer includes carbon. In some embodiments, the dry etching is performed at a sub-zero degree temperature.

公开(公告)号：US20230287568A1

公开(公告)日：2023-09-14

申请号：US17692351

申请日：2022-03-11

Applicant: Applied Materials, Inc.

Inventor： Laksheswar Kalita ,  Joseph Behnke ,  David Knapp

IPC: C23C16/455 ,  C23C18/32 ,  C23C14/16 ,  C23C18/16 ,  C23C14/58

CPC classification number: C23C16/45565 ,  C23C18/32 ,  C23C14/165 ,  C23C18/1689 ,  C23C14/5853

Abstract: Described herein is a chamber component including a metal layer comprising nickel and a barrier layer of nickel oxide over the metal layer. The barrier layer of nickel oxide may be formed by ozone treating the chamber component with air, nitrogen or argon O2, O3 at a temperature from about 25° C. to about 350° C.

公开(公告)号：US20180204721A1

公开(公告)日：2018-07-19

申请号：US15919902

申请日：2018-03-13

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Ben-Li Sheu ,  David Knapp ,  David Thompson

IPC: H01L21/02 ,  C23C16/18 ,  C23C16/34

CPC classification number: H01L21/02271 ,  C23C16/18 ,  C23C16/34 ,  H01L21/02142 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76873 ,  H01L23/53238

Abstract: Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.

公开(公告)号：US09982345B2

公开(公告)日：2018-05-29

申请号：US15210352

申请日：2016-07-14

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  David Knapp ,  Jeffrey W. Anthis

IPC: C23C16/18 ,  C23C16/455 ,  C07F5/06

CPC classification number: C23C16/45536 ,  C07F5/062 ,  C23C16/18 ,  C23C16/45553

Abstract: Methods of depositing a metal-containing film by exposing a substrate surface to a first precursor and a reactant, where one or more of the first precursor and the react comprises a compound having the general formula of one or more of M(XR3)2, M(XR3)3, M(XR3)4, M(XR3)5 and M(XR3)6, where M is selected from the group consisting of Al, Ti, Ta, Zr, La, Hf, Ce, Zn, Cr, Sn, V and combinations thereof, each X is one or more of C, Si and Ge and each R is independently a methyl or ethyl group and comprises substantially no β-H.