公开(公告)号：US20240141492A1

公开(公告)日：2024-05-02

申请号：US18125215

申请日：2023-03-23

Applicant: Applied Materials, Inc.

Inventor： Prasanth Narayanan ,  Vijayabhaskara Venkatagiriyappa ,  Keiichi Tanaka ,  Ning Li ,  Robert B. Moore ,  Robert C. Linke ,  Mandyam Sriram ,  Mario D. Silvetti ,  Michael Racine ,  Tae Kwang Lee

IPC: C23C16/458

CPC classification number: C23C16/4581 ,  C23C16/4583

Abstract: Susceptor assemblies having a susceptor base with a plurality of pockets formed in a surface thereof are described. Each of the pockets has a pocket edge angle in the range of 30 to 75° and a pocket edge radius in the range of 0.40±0.05 mm to 1.20 mm±0.05 mm. The pockets have a raised central region and an outer region that is deeper than the raised central region, relative to the surface of the surface of the susceptor base.

公开(公告)号：US20220059362A1

公开(公告)日：2022-02-24

申请号：US17516096

申请日：2021-11-01

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Victor Nguyen ,  Mihaela A. Balseanu ,  Li-Qun Xia ,  Keiichi Tanaka ,  Steven D. Marcus

IPC: H01L21/311 ,  H01L21/033 ,  H01J37/32 ,  H01L21/687 ,  C23C16/455

Abstract: Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber separated by gas curtains so that each section independently has a process condition.

公开(公告)号：US20220028660A1

公开(公告)日：2022-01-27

申请号：US17498231

申请日：2021-10-11

Applicant: Applied Materials, Inc.

Inventor： Tsutomu Tanaka ,  John C. Forster ,  Ran Liu ,  Kenichi Ohno ,  Ning Li ,  Mihaela A. Balseanu ,  Keiichi Tanaka ,  Li-Qun Xia

IPC: H01J37/32

Abstract: Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.

公开(公告)号：US20180130642A1

公开(公告)日：2018-05-10

申请号：US15805466

申请日：2017-11-07

Applicant: Applied Materials, Inc.

Inventor： Tsutomu Tanaka ,  John C. Forster ,  Ran Liu ,  Kenichi Ohno ,  Ning Li ,  Mihaela Balseanu ,  Keiichi Tanaka ,  Li-Qun Xia

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/455 ,  C23C16/52 ,  C23C16/458 ,  C23C16/34 ,  C23C16/40

CPC classification number: H01J37/32449 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/458 ,  C23C16/4583 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32137 ,  H01J37/32183 ,  H01J37/3244 ,  H01J37/32935

Abstract: Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.

公开(公告)号：US20150200110A1

公开(公告)日：2015-07-16

申请号：US14595595

申请日：2015-01-13

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Keiichi Tanaka ,  Steven D. Marcus

IPC: H01L21/311

CPC classification number: H01L21/31144 ,  C23C16/45551 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/0337 ,  H01L21/68764 ,  H01L21/68771

Abstract: Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber separated by gas curtains so that each section independently has a process condition.

Abstract translation: 提供了包括特征修剪的自对准双重图案化方法。 SADP工艺在单批处理室中进行，其中衬底在由气帘分开的处理室的部分之间横向移动，使得每个部分独立地具有工艺条件。

公开(公告)号：US11581213B2

公开(公告)日：2023-02-14

申请号：US17029648

申请日：2020-09-23

Applicant: Applied Materials, Inc.

Inventor： Abhishek Chowdhury ,  Vijayabhaskara Venkatagiriyappa ,  Mihaela A. Balseanu ,  Jyoti Prakash Deo ,  Srinivas Ramakrishna ,  Keiichi Tanaka ,  Mandyam Sriram ,  Francis Kanyiri Mungai ,  Mario D. Silvetti ,  Sriharish Srinivasan

IPC: H01L21/683 ,  H01L21/687 ,  C23C16/458

Abstract: Apparatus and methods for vacuum chucking a substrate to a susceptor. The susceptor comprises one or more angularly spaced pockets are positioned around a center axis of the susceptor, the one or more angularly spaced pockets having an inner pocket and an outer pocket. The susceptor can be configured as an intermediate chuck having one or more pucks positioned within the inner pocket or as a distributed chuck having one or more pucks positioned within the outer pocket. The one or more pucks has a center hole, at least one radial channel and at least one circular channel having chuck holes for vacuum chucking a substrate.

公开(公告)号：US20220205095A1

公开(公告)日：2022-06-30

申请号：US17139211

申请日：2020-12-31

Applicant: Applied Materials, Inc.

Inventor： Francis Kanyiri Mungai ,  Vijayabhaskara Venkatagiriyappa ,  Yung-Cheng Hsu ,  Keiichi Tanaka ,  Mario D. Silvetti ,  Mihaela A. Balseanu

IPC: C23C16/455 ,  C23C16/32 ,  C23C16/458 ,  H01L21/687

Abstract: Apparatus and methods for modifying a susceptor having a silicon carbide (SiC) surface. The method includes exposing the silicon carbide surface (SiC) to an atmospheric plasma. The method increases the atomic oxygen content of the silicon carbide (SiC) surface. The disclosure also describes a plasma treatment apparatus having a susceptor holding assembly and a plasma nozzle.

公开(公告)号：US11164753B2

公开(公告)日：2021-11-02

申请号：US14595595

申请日：2015-01-13

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Keiichi Tanaka ,  Steven D. Marcus

IPC: H01L21/311 ,  H01L21/033 ,  H01J37/32 ,  H01L21/687 ,  C23C16/455

Abstract: Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber separated by gas curtains so that each section independently has a process condition.

公开(公告)号：US11692267B2

公开(公告)日：2023-07-04

申请号：US17139211

申请日：2020-12-31

Applicant: Applied Materials, Inc.

Inventor： Francis Kanyiri Mungai ,  Vijayabhaskara Venkatagiriyappa ,  Yung-Cheng Hsu ,  Keiichi Tanaka ,  Mario D. Silvetti ,  Mihaela A. Balseanu

IPC: C23C16/32 ,  C23C16/455 ,  H01L21/687 ,  C23C16/458

CPC classification number: C23C16/45536 ,  C23C16/325 ,  C23C16/4582 ,  C23C16/45544 ,  H01L21/68757

Abstract: Methods for modifying a susceptor having a silicon carbide (SiC) surface comprising exposing the silicon carbide surface (SiC) to an atmospheric plasma are described. The method increases the atomic oxygen content of the silicon carbide (SiC) surface.

公开(公告)号：US20190189400A1

公开(公告)日：2019-06-20

申请号：US16220833

申请日：2018-12-14

Applicant: Applied Materials, Inc.

Inventor： Kenichi Ohno ,  Keiichi Tanaka ,  Li-Qun Xia ,  Tsutomu Tanaka ,  Dmitry A. Dzilno ,  Mario D. Silvetti ,  John C. Forster ,  Rakesh Ramadas ,  Mike Murtagh ,  Alexander V. Garachtchenko

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/507 ,  C23C16/56

CPC classification number: H01J37/32385 ,  C23C16/45519 ,  C23C16/45544 ,  C23C16/507 ,  C23C16/56 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/332 ,  H01J2237/3341

Abstract: Apparatus and methods for depositing and treating or etching a film are described. A batch processing chamber includes a plurality of processing regions with at least one plasma processing region. A low frequency bias generator is connected to a susceptor assembly to intermittently apply a low frequency bias to perform a directional treatment or etching the deposited film.