公开(公告)号：US09601431B2

公开(公告)日：2017-03-21

申请号：US14173807

申请日：2014-02-05

Applicant: Applied Materials, Inc.

Inventor： He Ren ,  Mehul B. Naik ,  Yong Cao ,  Mei-yee Shek ,  Yana Cheng ,  Sree Rangasai V. Kesapragada

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/768 ,  H01L21/285

CPC classification number: H01L23/53238 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/7685 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An interconnect structure for use in semiconductor devices and a method for fabricating the same is described. The method includes positioning a substrate in a vacuum processing chamber. The substrate has an exposed copper surface and an exposed low-k dielectric surface. A metal layer is formed over the copper surface but not over the low-k dielectric surface. A metal-based dielectric layer is formed over the metal layer and the low-k dielectric layer.

公开(公告)号：US20130230986A1

公开(公告)日：2013-09-05

申请号：US13768688

申请日：2013-02-15

Applicant: APPLIED MATERIALS, INC.

Inventor： NAGARAJAN RAJAGOPALAN ,  Mei-yee Shek ,  Albert Lee ,  Annamalai Lakshmanan ,  Li-Qun Xia ,  Zhenjiang Cui

IPC: H01L21/321

CPC classification number: H01L21/321 ,  C23C16/325 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/3115 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/7681 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76877 ,  H01L21/76886

Abstract: Methods are provided for processing a substrate for depositing an adhesion layer between a conductive material and a dielectric layer. In one aspect, the invention provides a method for processing a substrate including positioning a substrate having a conductive material disposed thereon, introducing a reducing compound or a silicon based compound, exposing the conductive material to the reducing compound or the silicon based compound, and depositing a silicon carbide layer without breaking vacuum.

Abstract translation: 提供了用于处理用于在导电材料和电介质层之间沉积粘合层的衬底的方法。 一方面，本发明提供了一种处理衬底的方法，包括定位其上布置有导电材料的衬底，引入还原化合物或硅基化合物，将导电材料暴露于还原化合物或硅基化合物，以及沉积 没有破坏真空的碳化硅层。

公开(公告)号：US10008448B2

公开(公告)日：2018-06-26

申请号：US15439145

申请日：2017-02-22

Applicant: Applied Materials, Inc.

Inventor： He Ren ,  Mehul B. Naik ,  Yong Cao ,  Mei-yee Shek

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/7685 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An interconnect structure for use in semiconductor devices and a method for fabricating the same is described. The method includes positioning a substrate in a vacuum processing chamber, wherein the substrate comprises a copper layer having an exposed surface and a low-k dielectric layer having an exposed surface, forming a metal layer over the exposed surface of the copper layer, wherein the exposed surface of the low-k dielectric layer is free from the metal layer, and forming a metal-based dielectric layer over the metal layer and over at least part of the exposed low-k dielectric surface, wherein the metal-based dielectric layer comprises an aluminum compound.

公开(公告)号：US09580801B2

公开(公告)日：2017-02-28

申请号：US14535803

申请日：2014-11-07

Applicant: Applied Materials, Inc.

Inventor： Xiaolan Ba ,  Weifeng Ye ,  Mei-yee Shek ,  Yu Jin ,  Li-Qun Xia ,  Deenesh Padhi ,  Alexandros T. Demos

IPC: H01L21/31 ,  C23C16/44 ,  C23C16/36 ,  C23C16/455 ,  C23C16/50 ,  C23C16/56 ,  H01L21/768 ,  H01L21/02

CPC classification number: C23C16/4408 ,  C23C16/36 ,  C23C16/45523 ,  C23C16/50 ,  C23C16/56 ,  H01L21/02167 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834

Abstract: Embodiments described herein generally relate to the formation of a UV compatible barrier stack. Methods described herein can include delivering a process gas to a substrate positioned in a process chamber. The process gas can be activated to form an activated process gas, the activated process gas forming a barrier layer on a surface of the substrate, the barrier layer comprising silicon, carbon and nitrogen. The activated process gas can then be purged from the process chamber. An activated nitrogen-containing gas can be delivered to the barrier layer, the activated nitrogen-containing gas having a N2:NH3 ratio of greater than about 1:1. The activated nitrogen-containing gas can then be purged from the process chamber. The above elements can be performed one or more times to deposit the barrier stack.

Abstract translation: 本文描述的实施方案通常涉及形成与UV相容的阻挡层叠体。 本文所述的方法可以包括将处理气体输送到位于处理室中的基板。 工艺气体可以被活化以形成活化的工艺气体，活化的工艺气体在衬底的表面上形成阻挡层，阻挡层包括硅，碳和氮。 然后可以从处理室清除活化的工艺气体。 可以将活化的含氮气体输送到阻挡层，活性含氮气体的N 2 :NH 3比率大于约1:1。 然后可以将活化的含氮气体从处理室清除。 上述元件可以执行一次或多次以沉积势垒堆叠。

公开(公告)号：US08852962B2

公开(公告)日：2014-10-07

申请号：US13659555

申请日：2012-10-24

Applicant: Applied Materials, Inc.

Inventor： Steven Verhaverbeke ,  Roman Gouk ,  Li-Qun Xia ,  Mei-yee Shek ,  Yu Jin

IPC: H01L21/02 ,  G11B5/74 ,  G11B5/84 ,  H01L21/67 ,  H01L21/677 ,  H01L21/033 ,  H01F41/34

CPC classification number: H01F41/34 ,  G11B5/743 ,  G11B5/84 ,  H01L21/0332 ,  H01L21/67161 ,  H01L21/67736

Abstract: Embodiments of the present invention provide methods and apparatus for forming a patterned magnetic layer for use in magnetic media. According to embodiments of the present application, a silicon oxide layer formed by low temperature chemical vapor deposition is used to form a pattern in a hard mask layer, and the patterned hard mask is used to form a patterned magnetic layer by plasma ion implantation.

Abstract translation: 本发明的实施例提供了用于形成用于磁性介质的图案化磁性层的方法和装置。 根据本申请的实施例，使用通过低温化学气相沉积形成的氧化硅层在硬掩模层中形成图案，并且使用图案化的硬掩模通过等离子体离子注入形成图案化的磁性层。

公开(公告)号：US09633861B2

公开(公告)日：2017-04-25

申请号：US14180054

申请日：2014-02-13

Applicant: Applied Materials, Inc.

Inventor： Weifeng Ye ,  Mei-yee Shek ,  Mihaela Balseanu ,  Xiaojun Zhang ,  Xiaolan Ba ,  Yu Jin ,  Li-Qun Xia

IPC: H01L21/285 ,  H01L21/768

CPC classification number: H01L21/28562 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76883

Abstract: Embodiments of the present invention provide processes to selectively form a metal layer on a conductive surface, followed by flowing a silicon based compound over the metal layer to form a metal silicide layer. In one embodiment, a substrate having a conductive surface and a dielectric surface is provided. A metal layer is then deposited on the conductive surface. A metal silicide layer is formed as a result of flowing a silicon based compound over the metal layer. A dielectric is formed over the metal silicide layer.

公开(公告)号：US09478460B2

公开(公告)日：2016-10-25

申请号：US14822313

申请日：2015-08-10

Applicant: Applied Materials, Inc.

Inventor： Mei-yee Shek ,  Weifeng Ye ,  Li-Qun Xia ,  Kang Sub Yim ,  Kelvin Chan

IPC: H01L21/76 ,  H01L23/532 ,  H01L21/02 ,  H01L21/768 ,  H01L21/285 ,  H01L21/3105

CPC classification number: H01L21/7685 ,  H01L21/02074 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. Embodiments described herein control selectivity of deposition by preventing damage to the dielectric surface, repairing damage to the dielectric surface, such as damage which can occur during the cobalt deposition process, and controlling deposition parameters for the cobalt layer.

公开(公告)号：US09105695B2

公开(公告)日：2015-08-11

申请号：US14285535

申请日：2014-05-22

Applicant: Applied Materials, Inc.

Inventor： Mei-yee Shek ,  Weifeng Ye ,  Li-Qun Xia ,  Kang Sub Yim ,  Kelvin Chan

IPC: H01L21/44 ,  H01L21/311 ,  H01L21/768 ,  H01L23/532 ,  H01L21/02 ,  H01L21/285

CPC classification number: H01L21/7685 ,  H01L21/02074 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. Embodiments described herein control selectivity of deposition by preventing damage to the dielectric surface, repairing damage to the dielectric surface, such as damage which can occur during the cobalt deposition process, and controlling deposition parameters for the cobalt layer.

Abstract translation: 本发明的实施方案提供了在暴露的电介质表面上在铜表面上选择性地形成钴层的方法。 本文所述的实施例通过防止电介质表面的损坏来修复沉积的选择性，修复电介质表面的损伤，例如钴沉积过程中可能发生的损伤，以及控制钴层的沉积参数。

公开(公告)号：US20140273438A1

公开(公告)日：2014-09-18

申请号：US14180054

申请日：2014-02-13

Applicant: Applied Materials, Inc.

Inventor： Weifeng YE ,  Mei-yee Shek ,  Mihaela Balseanu ,  Xiaojun Zhang ,  Xiaolan Ba ,  Yu Jin ,  Li-Qun Xia

IPC: H01L21/768

CPC classification number: H01L21/28562 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76883

Abstract: Embodiments of the present invention provide processes to selectively form a metal layer on a conductive surface, followed by flowing a silicon based compound over the metal layer to form a metal silicide layer. In one embodiment, a substrate having a conductive surface and a dielectric surface is provided. A metal layer is then deposited on the conductive surface. A metal silicide layer is formed as a result of flowing a silicon based compound over the metal layer. A dielectric is formed over the metal silicide layer.

Abstract translation: 本发明的实施方案提供了选择性地在导电表面上形成金属层，然后使硅基化合物在金属层上流动以形成金属硅化物层的方法。 在一个实施例中，提供具有导电表面和电介质表面的衬底。 然后在导电表面上沉积金属层。 作为使硅基化合物在金属层上流动的结果形成金属硅化物层。 在金属硅化物层上形成电介质。