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12 条记录 (耗时 0.046 秒)

    Integrated Circuit Devices with Well Regions and Methods for Forming the Same
    1.
    发明申请
    Integrated Circuit Devices with Well Regions and Methods for Forming the Same 审中-公开
    具有井区的集成电路器件及其形成方法

    公开(公告)号：US20140001518A1

    公开(公告)日：2014-01-02

    申请号：US13539027

    申请日：2012-06-29

    申请人： Chi-Feng Huang ,  Chia-Chung Chen ,  Victor Chiang Liang ,  Mingo Liu

    发明人： Chi-Feng Huang ,  Chia-Chung Chen ,  Victor Chiang Liang ,  Mingo Liu

    IPC分类号： H01L27/07 ,  H01L21/8249

    CPC分类号： H01L21/8249 ,  H01L27/0623 ,  H01L27/07 ,  H01L27/085 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/732 ,  H01L29/7327 ,  H01L29/808 ,  H01L29/861 ,  H01L29/93

    摘要： A method includes forming a deep well region of a first conductivity type in a substrate, implanting a portion of the deep well region to form a first gate, and implanting the deep well region to form a well region. The well region and the first gate are of a second conductivity type opposite the first conductivity type. An implantation is performed to form a channel region of the first conductivity type over the first gate. A portion of the deep well region overlying the channel region is implanted to form a second gate of the second conductivity type. A source/drain implantation is performed to form a source region and a drain region of the first conductivity type on opposite sides of the second gate. The source and drain regions are connected to the channel region, and overlap the channel region and the first gate.

    摘要翻译： 一种方法包括在衬底中形成第一导电类型的深阱区域，注入深阱区域的一部分以形成第一栅极，以及植入深阱区域以形成阱区域。 阱区和第一栅极是与第一导电类型相反的第二导电类型。 执行注入以在第一栅极上形成第一导电类型的沟道区。 植入覆盖沟道区域的深阱区域的一部分以形成第二导电类型的第二栅极。 进行源极/漏极注入以在第二栅极的相对侧上形成第一导电类型的源极区域和漏极区域。 源极和漏极区域连接到沟道区域，并且与沟道区域和第一栅极重叠。

    DAC architecture for LCD source driver
    3.
    发明授权
    DAC architecture for LCD source driver 有权
    DAC架构用于LCD源驱动

    公开(公告)号：US09275598B2

    公开(公告)日：2016-03-01

    申请号：US12859888

    申请日：2010-08-20

    申请人： Nang-Ping Tu ,  Fu-Lung Hsueh ,  Mingo Liu

    发明人： Nang-Ping Tu ,  Fu-Lung Hsueh ,  Mingo Liu

    IPC分类号： G09G3/36 ,  H03M1/68 ,  H03M1/72 ,  H03M1/76 ,  H03M1/80

    CPC分类号： G09G3/3696 ,  G09G3/3688 ,  G09G2310/027 ,  H03M1/687 ,  H03M1/72 ,  H03M1/76 ,  H03M1/804 ,  H03M1/806

    摘要： A two-stage digital-to-analog converter for outputting an analog voltage in response to a M-bit digital input code includes a two-bit serial charge redistribution digital-to-analog converter having a high reference voltage input node for receiving a high reference voltage and a low reference voltage input node for receiving a low reference voltage, and a voltage selector. The voltage selector sets the high reference voltage and low reference voltage to selected levels depending on at least a portion of the M-bit digital input code.

    摘要翻译： 用于响应于M位数字输入代码输出模拟电压的两级数模转换器包括具有高参考电压输入节点的两位串行电荷再分配数模转换器，用于接收高电平 参考电压和用于接收低参考电压的低参考电压输入节点，以及电压选择器。 电压选择器将高参考电压和低参考电压设置为所选电平，这取决于至少一部分M位数字输入代码。

    Micro probing tip made by micro machine method
    7.
    发明授权
    Micro probing tip made by micro machine method 失效
    微型探针微探针法制成

    公开(公告)号：US06797528B2

    公开(公告)日：2004-09-28

    申请号：US10053224

    申请日：2002-01-17

    申请人： Mingo Liu ,  Jeng-Han Lee

    发明人： Mingo Liu ,  Jeng-Han Lee

    IPC分类号： G01R3126

    CPC分类号： G01R3/00

    摘要： A method and apparatus for forming a micro tip for a micro probe utilized in testing semiconductor integrated circuit devices. A thick oxide layer is deposited upon a substrate initially to form the micro tip. The micro tip for the micro probe can be defined from the thick oxide layer upon the substrate through a plurality of subsequent semiconductor manufacturing operations performed upon the substrate and layers thereof. A plurality of micro tips can be mass produced and efficiently utilized in association with increasingly smaller sizes of semiconductor integrated circuit devices.

    摘要翻译： 一种用于形成用于测试半导体集成电路器件的微探头微尖的方法和装置。 最初将厚氧化层沉积在基底上以形成微尖端。 用于微探针的微尖端可以通过在衬底及其层上执行的多个随后的半导体制造操作从衬底上的厚氧化物层定义。 可以与越来越小尺寸的半导体集成电路器件相关联地大量生产和有效地利用多个微尖端。

    Schottky device
    9.
    发明授权
    Schottky device 有权
    肖特基装置

    公开(公告)号：US08338906B2

    公开(公告)日：2012-12-25

    申请号：US12329677

    申请日：2008-12-08

    申请人： Ping-Chun Yeh ,  Der-Chyang Yeh ,  Ruey-Hsin Liu ,  Mingo Liu

    发明人： Ping-Chun Yeh ,  Der-Chyang Yeh ,  Ruey-Hsin Liu ,  Mingo Liu

    IPC分类号： H01L29/66

    CPC分类号： H01L27/0814 ,  H01L29/0692 ,  H01L29/417 ,  H01L29/872

    摘要： An integrated circuit structure has a metal silicide layer formed on an n-type well region, a p-type guard ring formed on the n-type well region and encircling the metal silicide layer. The outer portion of the metal silicide layer extends to overlap the inner edge of the guard ring, and a Schottky barrier is formed at the junction of the internal portion of the metal silicide layer and the well region. A conductive contact is in contact with the internal portion and the outer portion of the metal silicide layer.

    摘要翻译： 集成电路结构具有形成在n型阱区上的金属硅化物层，形成在n型阱区上并环绕金属硅化物层的p型保护环。 金属硅化物层的外部部分延伸成与保护环的内边缘重叠，并且在金属硅化物层的内部部分与阱区域的接合处形成肖特基势垒。 导电接触件与金属硅化物层的内部部分和外部部分接触。