利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

39 条记录 (耗时 0.021 秒)

    Integrated semiconductor light emitting element with oscillation wavelength and phase modulated light output
    2.
    发明授权
    Integrated semiconductor light emitting element with oscillation wavelength and phase modulated light output 失效
    具有振荡波长和相位调制光输出的集成半导体发光元件

    公开(公告)号：US4720835A

    公开(公告)日：1988-01-19

    申请号：US767152

    申请日：1985-08-19

    申请人： Shigeyuki Akiba ,  Katsuyuki Utaka ,  Yukio Noda ,  Yukitoshi Kushiro

    发明人： Shigeyuki Akiba ,  Katsuyuki Utaka ,  Yukio Noda ,  Yukitoshi Kushiro

    IPC分类号： G02F1/025 ,  H01S5/00 ,  H01S5/062 ,  H01S5/0625 ,  H01S5/12 ,  H01S5/16 ,  H01S3/19

    CPC分类号： H01S5/164 ,  H01S5/06258 ,  H01S5/12 ,  H01S5/06236 ,  H01S5/06246 ,  H01S5/124

    摘要： A semiconductor light emitting element is disclosed, which is provided with a light emitting region having a diffraction grating formed by periodic corrugations, a modulation region having an external waveguide layer optically connected directly to the light emitting region and a pn junction separated from a pn junction of the light emitting region and a window region formed of a semiconductor having a larger energy gap than that of a light emitting layer of the light emitting region and extending from at least one end of the light emitting region and the external waveguide layer. The refractive index of the external waveguide is varied through utilization of the electrooptic effect so that the frequency or phase of light stably oscillating at a single wavelength is precisely controlled or modulated. In particular, when the window region is formed only outside the light emitting region, frequency modulation is carried out, and when the window region is formed at least outside the modulation region, phase modulation takes place.

    摘要翻译： 公开了一种半导体发光元件，其设置有具有由周期性波纹形成的衍射光栅的发光区域，具有与发光区域直接光学连接的外部波导层的调制区域和与pn结分离的pn结 的发光区域和由与发光区域的发光层相比能量间隙大的半导体形成的窗口区域，并且从发光区域和外部波导层的至少一端延伸。 通过利用电光效应来改变外部波导的折射率，从而精确地控制或调制在单个波长处稳定振荡的光的频率或相位。 特别地，当窗口区仅形成在发光区域的外部时，进行频率调制，并且当至少在调制区域外部形成窗口区域时，进行相位调制。

    Optical modulation device
    5.
    发明授权
    Optical modulation device 失效
    光调制装置

    公开(公告)号：US4913506A

    公开(公告)日：1990-04-03

    申请号：US311218

    申请日：1989-02-16

    申请人： Masatoshi Suzuki ,  Shigeyuki Akiba ,  Hideaki Tanaka ,  Katsuyuki Utaka

    发明人： Masatoshi Suzuki ,  Shigeyuki Akiba ,  Hideaki Tanaka ,  Katsuyuki Utaka

    IPC分类号： G02F1/015 ,  G02F1/017 ,  G02F1/025 ,  G02B6/10

    CPC分类号： B82Y20/00 ,  G02F1/01708 ,  G02F1/025 ,  G02F2001/0157 ,  G02F2202/101 ,  G02F2202/102

    摘要： An optical modulation device is disclosed in which a difference between the photon energy of incident light and the band-gap energy of the modulation waveguide layer is set to a value greater than 50 meV to thereby suppress the degradation of the modulation voltage and the modulation band width which is caused by an increase in the intensity of incident light and in that the optical modulation device is formed in a predetermined length to thereby decrease the modulation voltage. The energy gap of the optical waveguide layer of the optical modulation device is varied continuously or discontinuously in the direction of its thickness to provide a constant absorption coefficient thickwise of the optical waveguide layer so that the electric field intensity distribution in the optical waveguide layer is compensated for, by which overlap of the light distribution and the absorption coefficient is increased so as to decrease the modulation voltage and broaden the modulation band by the reduction of the length of the device. The composition, thickness and stripe width of the optical waveguide layer are changed so that its absorption coefficient increases from the light receiving end face of the optical waveguide layer toward its light emitting end face, thereby making the number of carriers absorbed per unit length substantially constant in the direction of travel of light.

    摘要翻译： 公开了一种光调制装置，其中将入射光的光子能量与调制波导层的带隙能量之间的差设定为大于50meV的值，从而抑制调制电压和调制带的劣化 由入射光强度的增加引起的宽度，并且光调制装置形成为预定长度，从而降低调制电压。 光调制装置的光波导层的能隙在其厚度方向上连续或不连续地变化，以提供光波导层厚度的恒定吸收系数，使得光波导层中的电场强度分布得到补偿 由此，增加了光分布和吸收系数的重叠，从而降低了调制电压，并且通过减小器件的长度来扩大调制频带。 改变光波导层的组成，厚度和条纹宽度，使得其吸收系数从光波导层的光接收端面向其发光端面增加，从而使每单位长度吸收的载流子基本恒定 在光的行进方向。

    Multi-layered semi-conductor photodetector
    6.
    发明授权
    Multi-layered semi-conductor photodetector 失效
    多层半导体光电探测器

    公开(公告)号：US4682196A

    公开(公告)日：1987-07-21

    申请号：US806746

    申请日：1985-12-09

    申请人： Kazuo Sakai ,  Yuichi Matsushima ,  Shigeyuki Akiba ,  Katsuyuki Utaka

    发明人： Kazuo Sakai ,  Yuichi Matsushima ,  Shigeyuki Akiba ,  Katsuyuki Utaka

    IPC分类号： H01L29/205 ,  H01L31/0352 ,  H01L31/11 ,  H01L27/14 ,  H01L29/12

    CPC分类号： H01L29/205 ,  H01L31/035281 ,  H01L31/11 ,  Y02E10/50

    摘要： A semiconductor device, which is formed by a sequential lamination of a first semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3, a second semiconductor layer having a carrier concentration less than 10.sup.16 cm.sup.-3, a third semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3 and a thickness less than 300 .ANG., a fourth semiconductor layer having a carrier concentration less than 10.sup.16 cm.sup.-3, and a fifth semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3 and, in which the first and fifth semiconductor layers are the same in conductivity type and the third semiconductor layer is different in conductivity type from the fifth semiconductor layer. In accordance with the present invention, the energy gap of the third semiconductor layer is larger than the energy gaps of the second and fourth semiconductor layers. An annular region of a semi-insulating material or of the same conductivity type as that of the third semiconductor layer may be formed around an active region to extend from the fifth semiconductor layer to the second semiconductor layer.

    摘要翻译： 一种半导体器件，其通过顺次层叠具有载流子浓度大于1017cm -3的第一半导体层，载流子浓度小于1016cm-3的第二半导体层，具有载流子浓度的第三半导体层 大于1017cm-3，厚度小于300，载流子浓度小于1016cm-3的第四半导体层和载流子浓度大于1017cm-3的第五半导体层，其中第一 并且第五半导体层的导电类型相同，并且第三半导体层的导电类型与第五半导体层不同。 根据本发明，第三半导体层的能隙大于第二和第四半导体层的能隙。 可以在有源区周围形成半绝缘材料或与第三半导体层相同的导电类型的环形区域，以从第五半导体层延伸到第二半导体层。

    Method for manufacturing diffraction grating
    7.
    发明授权
    Method for manufacturing diffraction grating 失效
    衍射光栅的制造方法

    公开(公告)号：US4660934A

    公开(公告)日：1987-04-28

    申请号：US710984

    申请日：1985-03-12

    申请人： Shigeyuki Akiba ,  Katsuyuki Utaka ,  Kazuo Sakai ,  Yuichi Matsushima

    发明人： Shigeyuki Akiba ,  Katsuyuki Utaka ,  Kazuo Sakai ,  Yuichi Matsushima

    IPC分类号： G02B5/18 ,  G03F7/00 ,  G03F7/095

    CPC分类号： G03F7/095 ,  G02B5/1857 ,  G03F7/001 ,  Y10S359/90

    摘要： A method for manufacturing diffraction grating, in which after forming, on a substrate, one of a negative type photoresist film (an N film) and a positive type photoresist film (a P film) to cover a first region A and the other of the negative type photoresist film and the positive type photoresist film, or the latter film on the former one to cover a second region B, the first region and the second region are subjected to two-beam interference exposure, thereby forming a diffraction grating in which corrugations in the first region and the second region are reverse in phase to each other, through utilization of characteristics of the negative type photoresist film and the positive type photoresist film. Another feature of the present invention resides in that after forming, on a substrate, a structure in which a negative type photoresist film (an N film) is formed to cover only a first region A and the negative type photoresist film is formed on a positive type photoresist film (a P film) to cover a second region B, the first region and the second region of the substrate are subjected to two-beam interference exposure, thereby forming a diffraction grating in which corrugations in the first region and the second region are reverse in phase to each other, through utilization of characteristics of the negative type photoresist film and the positive type photoresist film.

    摘要翻译： 制造衍射光栅的方法，其中在基板上形成负型光致抗蚀剂膜（N膜）和正型光致抗蚀剂膜（P膜）之一以覆盖第一区域A和另一个 负型光致抗蚀剂膜和正型光致抗蚀剂膜，或者在前者的后者膜覆盖第二区域B，第一区域和第二区域受到双光束干涉曝光，从而形成衍射光栅，其中波纹 通过利用负型光致抗蚀剂膜和正型光致抗蚀剂膜的特性，在第一区域和第二区域中的相位彼此相反。 本发明的另一个特征在于，在基板上形成后，形成负型光致抗蚀剂膜（N膜）仅覆盖第一区域A并且负型光致抗蚀剂膜形成为阳性的结构 （P膜）覆盖第二区域B，对基板的第一区域和第二区域进行双光束干涉曝光，从而形成衍射光栅，其中第一区域和第二区域中的波纹 通过利用负型光致抗蚀剂膜和正型光致抗蚀剂膜的特性，彼此相反。

    Distributed feedback semiconductor laser
    8.
    发明授权
    Distributed feedback semiconductor laser 失效
    分布式反馈半导体激光器

    公开(公告)号：US4573158A

    公开(公告)日：1986-02-25

    申请号：US699586

    申请日：1985-02-08

    申请人： Katsuyuki Utaka ,  Kazuo Sakai ,  Shigeyuki Akiba

    发明人： Katsuyuki Utaka ,  Kazuo Sakai ,  Shigeyuki Akiba

    IPC分类号： H01S5/00 ,  H01S5/06 ,  H01S5/0625 ,  H01S5/12 ,  H01S3/19

    CPC分类号： H01S5/0625 ,  H01S5/0602 ,  H01S5/06255 ,  H01S5/12

    摘要： A semiconductor laser of distributed feedback type, which is provided with a portion having periodic refractive index variations in the direction of light propagation in one of an active layer and a layer adjacent thereto and is caused to perform laser oscillation by injecting a current into the active layer portion. In accordance with the present invention, a current injection region having no periodic refractive index variations is formed on an extension of the portion having the periodic refractive index variations.

    摘要翻译： 一种分布式反馈型半导体激光器，其具有在有源层和与其相邻的层之一上的光传播方向上具有周期性折射率变化的部分，并且通过向有源层注入电流而进行激光振荡 层部分。 根据本发明，在具有周期性折射率变化的部分的延伸部上形成不具有周期性折射率变化的电流注入区域。

    Optical modulation element
    9.
    发明授权
    Optical modulation element 失效
    光调制元件

    公开(公告)号：US4946243A

    公开(公告)日：1990-08-07

    申请号：US387511

    申请日：1989-07-28

    申请人： Masatoshi Suzuki ,  Shigeyuki Akiba ,  Hideaki Tanaka ,  Katsuyuki Utaka

    发明人： Masatoshi Suzuki ,  Shigeyuki Akiba ,  Hideaki Tanaka ,  Katsuyuki Utaka

    IPC分类号： G02B6/12 ,  G02F1/015 ,  G02F1/025 ,  H01L31/14 ,  H03C1/34

    CPC分类号： G02F1/025 ,  G02F2001/0157

    摘要： An optical modulation element is disclosed which has, on a substrate directly or through a lower clad layer, an optical waveguide layer of a low impurity concentration, an upper clad layer of a refractive index smaller than that of the optical waveguide layer, and electrodes, and in which light of a constant intensity incident on a light incident end face of the optical waveguide layer is intensity-modulated by changing the absorption coefficient of the optical waveguide layer by means of an electric field applied thereto across the electrodes so that the thus modulated light is emitted from a light emitting end face of the optical waveguide layer. In accordance with the present invention, a plurality of low impurity concentration regions and a plurality of high impurity concentration regions are disposed alternately with each other in contact with at least one of the lower and upper clad layers in the direction of travel of light in such a manner that the distribution density of the plurality of high impurity concentration regions increases in the direction of travel of light.