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    Method for the Self-Adjusted Exposure of Side Surfaces of a Semiconductor Body
    5.
    发明申请
    Method for the Self-Adjusted Exposure of Side Surfaces of a Semiconductor Body 审中-公开

    公开(公告)号：US20190386172A1

    公开(公告)日：2019-12-19

    申请号：US16485400

    申请日：2018-02-27

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Jens Ebbecke ,  Sebastian Taeger

    IPC: H01L33/00 ,  H01L33/44 ,  H01L33/20 ,  H01L33/38

    Abstract: A method for exposing side surfaces of a semiconductor body is disclosed. In an embodiment a method includes providing the semiconductor body having a laterally extending first main surface, forming a plurality of vertical side surfaces by partially removing material of the semiconductor body and thereby removing the first main surface in places, wherein each of the side surfaces forms an angle (α) between 110° and 160° inclusive with the remaining first main surface, applying a protective layer onto the semiconductor body so that, in a plan view, the protective layer completely covers the remaining first main surface and the obliquely formed side surfaces and partially removing the protective layer so that the protective layer is removed in regions on the obliquely formed side surfaces because of an inclination and remains at least partially preserved in regions on the remaining first main surface during a common process operation.

    Optoelectronic semiconductor chip and method for fabricating an optoelectronic semiconductor chip
    6.
    发明授权
    Optoelectronic semiconductor chip and method for fabricating an optoelectronic semiconductor chip 有权

    公开(公告)号：US10374126B2

    公开(公告)日：2019-08-06

    申请号：US15763828

    申请日：2016-10-12

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Fabian Kopp ,  Sebastian Taeger

    IPC: H01L33/24 ,  H01L33/32 ,  H01L33/30 ,  H01L33/42 ,  H01L33/00 ,  H01L33/40 ,  H01L33/20 ,  H01L33/44

    Abstract: The invention relates to an optoelectronic semiconductor chip (100), comprising an n-doped semiconductor layer (3), a p-doped semiconductor layer (5) and an active layer (4) arranged between the n-doped semiconductor layer (3) and the p-doped semiconductor layer (5), wherein the p-doped semiconductor layer (5) has an electrically conductive layer (7) arranged above it that is set up for making electrical contact with the p-doped semiconductor layer (5), wherein a lateral edge (2) is arranged laterally with respect to the n-doped semiconductor layer (3), the p-doped semiconductor layer (5) and the active layer (4), wherein the lateral edge (2) has at least two oblique edge portions, wherein a first edge portion (21) has at least areas arranged laterally with respect to the p-doped semiconductor layer (5), wherein a second lateral edge (22) has at least areas arranged laterally with respect to the n-doped semiconductor layer (3), wherein the angle of the first edge portion (21) in relation to the active layer (4) is shallower than the angle of the second edge portion (22), and wherein the electrically conductive layer (7) is at a lateral distance from the lateral edge (2).

    Optoelectronic Semiconductor Chip
    7.
    发明申请
    Optoelectronic Semiconductor Chip 审中-公开
    光电半导体芯片

    公开(公告)号：US20160260870A1

    公开(公告)日：2016-09-08

    申请号：US15156802

    申请日：2016-05-17

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Markus Maute ,  Karl Engl ,  Sebastian Taeger ,  Robert Walter ,  Johannes Stocker

    IPC: H01L33/46 ,  H01L33/38 ,  H01L33/42 ,  H01L33/06 ,  H01L33/32

    CPC classification number: H01L33/46 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.

    Abstract translation: 公开了一种光电半导体芯片。 在一个实施例中，光电子半导体芯片包括半导体材料的半导体本体，p接触层和n接触层。 半导体主体包括用于产生辐射的有源层。 半导体本体包括p侧和n侧，其间布置有源层。 p接触层用于电接触p侧。 n接触层用于电接触n侧1b。 n接触层包含TCO层和镜层，TCO层布置在半导体主体的n侧和镜面层之间。

    Method for the self-adjusted exposure of side surfaces of a semiconductor body
    8.
    发明授权
    Method for the self-adjusted exposure of side surfaces of a semiconductor body 有权

    公开(公告)号：US10937922B2

    公开(公告)日：2021-03-02

    申请号：US16485400

    申请日：2018-02-27

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Jens Ebbecke ,  Sebastian Taeger

    IPC: H01L33/00 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44

    Abstract: A method for exposing side surfaces of a semiconductor body is disclosed. In an embodiment a method includes providing the semiconductor body having a laterally extending first main surface, forming a plurality of vertical side surfaces by partially removing material of the semiconductor body and thereby removing the first main surface in places, wherein each of the side surfaces forms an angle (α) between 110° and 160° inclusive with the remaining first main surface, applying a protective layer onto the semiconductor body so that, in a plan view, the protective layer completely covers the remaining first main surface and the obliquely formed side surfaces and partially removing the protective layer so that the protective layer is removed in regions on the obliquely formed side surfaces because of an inclination and remains at least partially preserved in regions on the remaining first main surface during a common process operation.

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