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公开(公告)号：US08031752B1
公开(公告)日：2011-10-04
申请号：US12340286
申请日：2008-12-19
IPC分类号： H01S5/00
CPC分类号： H01S5/18358 , H01S5/18311 , H01S5/18344 , H01S5/18361 , H01S5/305 , H01S5/3077 , H01S5/3211
摘要： A Vertical Cavity Surface Emitting Laser (VCSEL) is optimized for longer life of the VCSEL by controlling the distance of doped and undoped layers near an active region. In addition, the VCSEL optimized for reduced parasitic lateral current under an oxide of the VCSEL by forming a high Al confinement region and placing the oxide at a null in a standing optical wave. Further, the VCSEL is optimized to reduce resistance.
摘要翻译： 垂直腔表面发射激光器（VCSEL）通过控制有源区域附近的掺杂层和未掺杂层的距离来优化VCSEL的更长寿命。 此外，VCSEL通过形成高Al限制区域并将氧化物置于无效的静态光波中而优化用于在VCSEL的氧化物下降低的寄生横向电流。 此外，VCSEL被优化以降低电阻。
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2.发明授权Light emitting semiconductor device having an electrical confinement barrier near the active region 有权在有源区附近具有电限制屏障的发光半导体器件公开(公告)号：US07920612B2
公开(公告)日：2011-04-05
申请号：US11461353
申请日：2006-07-31
CPC分类号： H01S5/18358 , B82Y20/00 , H01L33/105 , H01S5/18311 , H01S5/3054 , H01S5/3211 , H01S5/3432
摘要： Light emitting semiconductor devices such as VCSELs, SELs, and LEDs are manufactured to have a thin electrical confinement barrier in a confining layer near the active region of the device. The thin confinement barrier comprises a III-V semiconductor material having a high aluminum content (e.g. 80%-100% of the type III material). The aluminum content of the adjacent spacer layer is lower than that of the confinement barrier. In one embodiment the spacer layer has an aluminum content of less than 40% and a direct bandgap. The aluminum profile reduces series resistance and improves the efficiency of the semiconductor device.
摘要翻译： 制造诸如VCSEL，SEL和LED的发光半导体器件在靠近器件的有源区域的约束层中具有薄的电限制屏障。 薄限制屏障包括具有高铝含量（例如III型材料的80％-100％）的III-V半导体材料。 相邻间隔层的铝含量低于限制屏障的铝含量。 在一个实施方案中，间隔层具有小于40％的铝含量和直接的带隙。 铝型材降低了串联电阻并提高了半导体器件的效率。
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公开(公告)号：US06558973B2
公开(公告)日：2003-05-06
申请号：US09766797
申请日：2001-01-22
IPC分类号： H01L2100
CPC分类号： H01L31/105 , H01L21/02381 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/02507 , H01L21/0251 , H01L21/02546 , H01L31/184 , Y02E10/544 , Y10S438/938
摘要： A method and apparatus for fabricating a metamorphic long-wavelength, high-speed photodiode, wherein a buffer layer matching a substrate lattice constant is formed at normal growth temperatures and a thin grading region which grades past the desired lattice constant is configured at a low temperature. A reverse grade back is performed to match a desired lattice constant. Thereafter, a thick layer is formed thereon, based on the desired lattice constant. Annealing can then occur to isolate dislocated material in a grading layer and a reverse grading layer. Thereon a strained layer superlattice substrate is created upon which a high-speed photodiode can be formed. Implant or diffusion layers grown in dopants can be formed based on materials, such as Be, Mg, C, Te, Si, Se, Zn, or others. A metal layer can be formed over a cap above a P+ region situated directly over an N-active region. The active region also includes a p-doped region. The high-speed photodiode can thus be formed utilizing GaAs, or other substrate material, such as germanium and silicon.
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公开(公告)号：US07009224B2
公开(公告)日：2006-03-07
申请号：US10413186
申请日：2003-04-14
IPC分类号： H01L31/0336 , H01L31/0328
CPC分类号： H01L31/105 , H01L21/02381 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/02507 , H01L21/0251 , H01L21/02546 , H01L31/184 , Y02E10/544 , Y10S438/938
摘要： A metamorphic device including a substrate structure upon which a semiconductor device can be formed. In the metamorphic device, a buffer layer matching a substrate lattice constant is formed at normal growth temperatures and a thin grading layer which grades past the desired lattice constant is configured at a low temperature. A reverse grading layer grades the lattice constant back to match a desired lattice constant. Thereafter, a thick layer is formed thereon, based on the desired lattice constant. Annealing can then occur to isolate dislocated material in at least the grading layer and the reverse grading layer. Thereon a strained layer superlattice is created upon which a high-speed photodiode or other semiconductor device can be formed.
摘要翻译： 一种变质装置，其包括可以形成半导体器件的基板结构。 在变质装置中，在正常生长温度下形成与衬底晶格常数相匹配的缓冲层，并且在低温下配置经过所需晶格常数的薄分级层。 反向分级层将晶格常数回归以匹配所需的晶格常数。 此后，基于所需的晶格常数，在其上形成厚层。 然后可以发生退火以在至少分级层和反向分级层中分离脱位的材料。 在其上形成了可以形成高速光电二极管或其它半导体器件的应变层超晶格。
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公开(公告)号：US07251264B2
公开(公告)日：2007-07-31
申请号：US11119292
申请日：2005-04-29
申请人： Ralph H. Johnson , Klein L. Johnson , Jimmy A. Tatum , James K. Guenter , James R. Biard , Robert A. Hawthorne, III
发明人： Ralph H. Johnson , Klein L. Johnson , Jimmy A. Tatum , James K. Guenter , James R. Biard , Robert A. Hawthorne, III
IPC分类号： H01S3/08
CPC分类号： H01S5/423 , H01S5/18308 , H01S5/18313 , H01S5/18333 , H01S5/18338 , H01S5/2063 , H01S5/3054 , H01S5/3211
摘要： This disclosure concerns devices such as DBRs, one example of which includes at least one first mirror layers having an oxidized region extending from an edge of the DBR to an oxide termination edge that is situated greater than a first distance from the edge of the DBR. The DBR also includes at least one second mirror layer having an oxidized region extending from the edge of the DBR to an oxide termination edge that is situated less than a second distance from the edge of the DBR, such that the first distance is greater than the second distance. Additionally, a first mirror layer includes an oxidizable material at a concentration that is higher than the concentration of the oxidizable material in any of the second mirror layers. Finally, a first mirror layer is doped with an impurity at a higher level than one of the second mirror layers.
摘要翻译： 本公开涉及诸如DBR的设备，其一个示例包括至少一个第一镜像层，其具有从DBR的边缘延伸到距离DBR的边缘大于第一距离的氧化物终止边缘的氧化区域。 DBR还包括至少一个第二镜层，其具有从DBR的边缘延伸到氧化物终止边缘的氧化区域，该氧化物终止边缘距离DBR的边缘小于第二距离，使得第一距离大于 第二距离。 此外，第一镜层包括浓度高于任何第二镜层中的可氧化材料的浓度的可氧化材料。 最后，第一镜层掺杂有比第二镜层中的一个更高的杂质。
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公开(公告)号：US06990135B2
公开(公告)日：2006-01-24
申请号：US10283381
申请日：2002-10-28
申请人： Ralph H. Johnson , Klein L. Johnson , Jimmy A. Tatum , James K. Guenter , James R. Biard , Robert A. Hawthorne, III
发明人： Ralph H. Johnson , Klein L. Johnson , Jimmy A. Tatum , James K. Guenter , James R. Biard , Robert A. Hawthorne, III
IPC分类号： H01S5/00
CPC分类号： H01S5/423 , H01S5/18308 , H01S5/18313 , H01S5/18333 , H01S5/18338 , H01S5/2063 , H01S5/3054 , H01S5/3211
摘要： An oxide-confined VCSELs having a distributed Bragg reflector with a heavily doped high Al content oxide aperture forming layer disposed between a low Al content first layer and a medium Al content second layer. Between the first layer and the oxide aperture forming layer there may be a thin transition region wherein the Al content changes from a higher Al content to a lower Al content. In some embodiments, the Al concentration from the oxide aperture forming layer to the second layer may occur in a step. The oxide aperture forming layer may be disposed at or near a null or a node of the electric field produced by resonant laser light. During the oxidization of the oxide aperture forming layer, all or some of the other aluminum bearing DBR layers may also become oxidized, but to a substantially lesser degree. The junction between the oxidized portion and un-oxidized portion of these layers is believed to reduce the stability and/or reliability of the device. To alleviate this, the present invention contemplates providing an implant, etch or other suitable process to reduce or eliminate one or more electrical artifacts associated with the junction between the oxidized portion and un-oxidized portion of these layers as well as reducing the oxidation of other aluminum bearing layers of the DBR.
摘要翻译： 具有分布布拉格反射器的氧化物限制性VCSEL，其具有设置在低Al含量第一层和介质Al含量第二层之间的重掺杂高Al含量氧化物孔形成层。 在第一层和氧化物孔形成层之间可能存在其中Al含量从较高Al含量变为较低Al含量的薄过渡区。 在一些实施方案中，从氧化物孔形成层到第二层的Al浓度可以在一个步骤中发生。 氧化物孔形成层可以设置在由共振激光产生的电场的零点或节点附近或附近。 在氧化物孔形成层的氧化过程中，其它所有的一部分的含铝DBR层也可能被氧化，但是其程度基本较小。 认为这些层的氧化部分和未氧化部分之间的连接点降低了装置的稳定性和/或可靠性。 为了减轻这一点，本发明设想提供一种植入物，蚀刻或其它合适的方法，以减少或消除与这些层的氧化部分和未氧化部分之间的接合相关联的一个或多个电赝象以及减少其它的氧化部分 铝合金轴承层的DBR。
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公开(公告)号：US07065124B2
公开(公告)日：2006-06-20
申请号：US10767920
申请日：2004-01-29
CPC分类号： H01S5/18358 , H01S5/0421 , H01S5/18308 , H01S5/2009 , H01S5/205 , H01S5/3211 , H01S5/423 , H01S2301/166
摘要： A VCSEL having an N-type Bragg mirror with alternating layers of high bandgap (low index) and low bandgap (high index) layers of AlGaAs. The layers may be separated by a step change of Al composition followed by a graded region, and vice versa for the next layer, in the N-type mirror to result in a lower and more linear series resistance. Also, an N-type spacer layer may be adjacent to an active region of quantum wells. There may be a similar step in a change of Al composition from the nearest layer of the N-type mirror to the N-type spacer formed from a lower bandgap direct AlGaAs layer to provide lower free carrier absorption. With electron affinity engineering, a minority carrier hole barrier may be inserted adjacent to the quantum wells to improve hole confinement at high current density and high temperature.
摘要翻译： 具有具有高带隙（低折射率）和低带隙（高折射率）AlGaAs层的交替层的N型布拉格反射镜的VCSEL。 这些层可以通过Al组分的阶跃变化和随后的渐变区域分离，反之亦然，在N型反射镜中可以产生较低和更线性的串联电阻。 此外，N型间隔层可以与量子阱的有源区相邻。 从最近的N型反射镜层到由较低带隙的直接AlGaAs层形成的N型间隔物的Al组成变化可能有类似的步骤，以提供较低的自由载流子吸收。 通过电子亲和力工程，可以在量子阱附近插入少数载流子阱屏障，以在高电流密度和高温下改善孔隙限制。
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公开(公告)号：US07031363B2
公开(公告)日：2006-04-18
申请号：US10697660
申请日：2003-10-29
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18311 , H01S5/18341 , H01S5/18363 , H01S5/18366 , H01S2301/176 , H01S2304/00
摘要： A process for making a laser structure. The process is for the fabrication of a laser device such a vertical cavity surface emitting laser (VCSEL). The structures made involve dielectric and spin-on material planarization over wide and narrow trenches, coplanar contacts, non-coplanar contacts, thick and thin pad dielectric, air bridges and wafer thinning.
摘要翻译： 制造激光结构的方法。 该方法用于制造诸如垂直腔表面发射激光器（VCSEL）的激光器件。 所制造的结构涉及宽和窄沟槽，共面触点，非共面触点，厚和薄的电介质，空气桥和晶片变薄的介电和旋涂材料平面化。
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9.发明授权Emitting with structures located at positions which prevent certain disadvantageous modes and enhance generation of light in advantageous modes 失效发射结构位于防止某些不利模式的位置，并在有利的模式下增强光的产生
公开(公告)号：US5264715A
公开(公告)日：1993-11-23
申请号：US909270
申请日：1992-07-06
申请人： James K. Guenter , Ralph H. Johnson
发明人： James K. Guenter , Ralph H. Johnson
CPC分类号： H01L33/20 , H01L33/105 , H01S5/20 , H01L33/02 , H01L33/145 , H01L33/465 , H01S5/2004
摘要： A light emitting device is provided with mirrors placed on opposite sides of the source of light and spaced apart by a distance that is determined as a function of the wavelength of the light emitted by the light source. One particular embodiment of the present invention spaces the mirrors apart by a distance equal to n.lambda./2+.lambda./4, where n is an integer value that is maintained as small as possible within practical constraints. The close proximity of the mirrors and their particular spacing which is determined as a function of the wavelength inhibits undesirable modes of light emission in directions toward the mirrors. This inhibition of light in undesirable modes perpendicular to the mirrors enhances the production of light in modes that are parallel to the mirror surfaces. The overall light output efficiency of the device is enhanced through the inhibition of these undesirable modes.
摘要翻译： 发光器件设置有放置在光源的相对侧上的反射镜并且间隔开一定距离，该距离被确定为由光源发射的光的波长的函数。 本发明的一个具体实施例将镜子间隔开等于nλ/ 2 +λ/ 4的距离，其中n是在实际约束条件下尽可能小的整数值。 反射镜的紧密接近以及其作为波长的函数确定的特定间隔抑制了朝向反射镜的方向上的不期望的发光模式。 这种在与反射镜垂直的不期望的模式中的光的抑制增强了与镜面平行的模式的光的产生。 通过抑制这些不期望的模式，增强了器件的整体光输出效率。
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公开(公告)号：US20110306156A1
公开(公告)日：2011-12-15
申请号：US13210306
申请日：2011-08-15
申请人： Ralph H. Johnson , James K. Guenter
发明人： Ralph H. Johnson , James K. Guenter
IPC分类号： H01L21/302
CPC分类号： H01S5/18355 , H01S5/18311 , H01S5/18319 , H01S5/18386
摘要： Methods for manufacturing a polarization pinned vertical cavity surface emitting laser (VCSEL). Steps include growing a lower mirror on a substrate; growing an active region on the lower mirror; growing an upper mirror on the active region; depositing a grating layer on the upper minor; and etching a grating into the grating layer.
摘要翻译： 用于制造偏振锁定垂直腔表面发射激光器（VCSEL）的方法。 步骤包括在基材上生长下反射镜; 在下镜上生长活跃区域; 在活跃地区生长上镜; 在上部小型物体上沉积光栅层; 并将光栅蚀刻到光栅层中。
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