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公开(公告)号:US20160240509A1
公开(公告)日:2016-08-18
申请号:US15135364
申请日:2016-04-21
Applicant: Samsung Electronics Co., Ltd.
Inventor: Heungkyu KWON , Kang Joon LEE , JaeWook YOO , Su-Chang LEE
IPC: H01L25/065 , H01L23/31 , H01L23/00
CPC classification number: H01L23/49811 , H01L23/13 , H01L23/16 , H01L23/18 , H01L23/3157 , H01L23/488 , H01L23/49816 , H01L23/49838 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/73 , H01L25/0652 , H01L25/0657 , H01L25/105 , H01L2224/0401 , H01L2224/0557 , H01L2224/13025 , H01L2224/131 , H01L2224/1319 , H01L2224/13541 , H01L2224/13561 , H01L2224/13583 , H01L2224/13609 , H01L2224/13611 , H01L2224/13616 , H01L2224/13624 , H01L2224/13639 , H01L2224/13644 , H01L2224/13647 , H01L2224/13649 , H01L2224/13655 , H01L2224/13657 , H01L2224/1366 , H01L2224/13664 , H01L2224/13666 , H01L2224/13669 , H01L2224/1367 , H01L2224/13671 , H01L2224/13672 , H01L2224/13679 , H01L2224/1368 , H01L2224/13681 , H01L2224/13684 , H01L2224/1401 , H01L2224/1403 , H01L2224/14135 , H01L2224/14136 , H01L2224/14181 , H01L2224/14505 , H01L2224/16146 , H01L2224/16225 , H01L2224/1703 , H01L2224/1712 , H01L2224/17181 , H01L2224/175 , H01L2224/1751 , H01L2224/2919 , H01L2224/32225 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06555 , H01L2225/06565 , H01L2225/1023 , H01L2225/1058 , H01L2225/1082 , H01L2924/00014 , H01L2924/15153 , H01L2924/15156 , H01L2924/15311 , H01L2924/15321 , H01L2924/15787 , H01L2924/18161 , H01L2924/3511 , H01L2924/00012 , H01L2924/00 , H01L2924/0665 , H01L2924/206 , H01L2924/014 , H01L2224/05552
Abstract: Semiconductor packages include a first substrate including a central portion and a peripheral portion, at least one first central connection member attached to the central portion of the first substrate, and at least one first peripheral connection member attached to the peripheral portion of the first substrate. The first central connection member includes a first supporter and a first fusion conductive layer surrounding the first supporter.
Abstract translation: 半导体封装包括包括中心部分和周边部分的第一基板,附接到第一基板的中心部分的至少一个第一中心连接部件和附接到第一基板的周边部分的至少一个第一周边连接部件。 第一中心连接构件包括第一支撑件和围绕第一支撑件的第一融合导电层。
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公开(公告)号:US20240290750A1
公开(公告)日:2024-08-29
申请号:US18367506
申请日:2023-09-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyoeun LEE , Hyunggil BAEK , Su-Chang LEE , Gyunghwan OH
IPC: H01L25/065 , H01L23/00 , H01L23/13 , H01L23/29 , H01L23/31 , H01L23/498 , H01L25/16 , H10B80/00
CPC classification number: H01L25/0652 , H01L23/13 , H01L23/293 , H01L23/3107 , H01L23/49822 , H01L24/16 , H01L24/32 , H01L24/73 , H01L25/16 , H10B80/00 , H01L2224/16145 , H01L2224/16235 , H01L2224/32145 , H01L2224/73204 , H01L2924/1432 , H01L2924/1436 , H01L2924/19041
Abstract: A semiconductor package includes a substrate including a first region having a recess defined therein and a second region spaced apart from the first region. The second region does not include the recess. A three-dimensional (3D) integrated circuit structure is on the first region. The 3D integrated circuit structure includes a first semiconductor chip die and a second semiconductor chip die disposed on the first semiconductor chip die. A plurality of connecting members electrically connecting the first semiconductor chip die to the substrate. A first side of each connecting member of the plurality of connecting members directly contacts the first semiconductor chip die and a second side that is opposite to the first side directly contacts the first region. A memory structure is disposed in the second region and positioned side by side with the 3D integrated circuit structure.
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