公开(公告)号：US20250006869A1

公开(公告)日：2025-01-02

申请号：US18885554

申请日：2024-09-13

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chi Hyun IN ,  Jun Yong PARK ,  Kyu Ho LEE ,  Dae Woong Suh ,  Jong Hyeon CHAE ,  Chang Hoon KIM ,  Sung Hyun LEE

IPC: H01L33/48 ,  H01L33/20 ,  H01L33/44 ,  H01L33/50 ,  H01L33/62

Abstract: A light emitting diode, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; an ohmic contact layer disposed on the second type semiconductor layer; a first insulating layer disposed on the semiconductor structure and including a first opening overlapping the first type semiconductor layer and a second opening overlapping the ohmic contact layer; a first connection wiring disposed on the first insulating layer, the first connection wiring having a first portion and a second portion; and a second connection wiring disposed on the first insulating layer and spaced apart from the first connection wiring, the second connection wiring electrically connected to the second type semiconductor layer through the second opening. The second connection wiring surrounds at least a portion of the first portion of the first connection wiring in a plan view.

公开(公告)号：US20180366613A1

公开(公告)日：2018-12-20

申请号：US16069665

申请日：2017-01-11

Applicant: Seoul Viosys Co., Ltd.

Inventor： Seong Kyu JANG ,  Hong Suk CHO ,  Kyu Ho LEE ,  Chi Hyun IN

IPC: H01L33/02 ,  H01L33/38 ,  H01L33/48 ,  H01L23/00 ,  H01L33/46

CPC classification number: H01L33/02 ,  H01L24/81 ,  H01L33/38 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L33/48 ,  H01L33/62 ,  H01L2924/12041

Abstract: An ultraviolet light-emitting device including a substrate, a first conductive type semiconductor layer disposed on the substrate, a mesa disposed on the first conductive type semiconductor layer and including a second conductive type semiconductor layer and an active layer disposed between the semiconductor layers, a first contact electrode contacting the exposed first conductive type semiconductor layer around the mesa, a second contact electrode contacting the second conductive type semiconductor layer on the mesa, a passivation layer covering the first contact electrode, the mesa, and the second contact electrode and having openings disposed above the first and second contact electrodes, and first and second bump electrodes electrically connected to the first and second contact electrodes through the openings of the passivation layer, in which the mesa has depressions in plan view, and the first and second bump electrodes cover the openings and a portion of the passivation layer.

公开(公告)号：US20160343911A1

公开(公告)日：2016-11-24

申请号：US15226304

申请日：2016-08-02

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon CHAE ,  Jong Min JANG ,  Won Young ROH ,  Daewoong SUH ,  Dae Sung CHO ,  Joon Sup LEE ,  Kyu Ho LEE ,  Chi Hyun IN

IPC: H01L33/40 ,  H01L33/46 ,  H01L33/42 ,  H01L33/20 ,  H01L33/32 ,  H01L33/12

CPC classification number: H01L33/405 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/12 ,  H01L33/14 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058

Abstract: A light emitting diode including a first conductive type semiconductor layer, a mesa disposed on the first conductive type semiconductor layer, the mesa including an active layer and a second conductive type semiconductor layer, a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer, a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer including a first portion configured to be in ohmic-contact with an upper surface of the first conductive type semiconductor layer, a first n-contact region spaced apart from a second n-contact region with the mesa disposed between the first and second n-contact regions, and an insulation layer including a first opening exposing the reflective electrode between the first and second n-contact regions. The first and second n-contact regions have a second opening that exposes the first conductive type semiconductor layer.

Abstract translation: 一种发光二极管，包括第一导电类型半导体层，设置在第一导电类型半导体层上的台面，包括有源层和第二导电类型半导体层的台面，设置在台面上并被配置为欧姆的反射电极 与第二导电型半导体层接触，设置在台面和反射电极上的电流扩散层，电流扩展层包括构造成与第一导电类型半导体层的上表面欧姆接触的第一部分， 与设置在第一和第二n接触区域之间的台面的第二n接触区域间隔开的第一n接触区域以及包括在第一和第二n-接触区域之间暴露反射电极的第一开口的绝缘层 。 第一和第二n接触区域具有暴露第一导电类型半导体层的第二开口。

公开(公告)号：US20140167086A1

公开(公告)日：2014-06-19

申请号：US14105919

申请日：2013-12-13

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Min JANG ,  Kyu-Ho LEE ,  Chang Suk HAN ,  Hwa Mok KIM ,  Daewoong SUH ,  Chi Hyun IN ,  Jong Hyeon CHAE

IPC: H01L33/22 ,  H01L21/02 ,  H01L33/00 ,  H01L29/06

CPC classification number: H01L33/22 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/0657 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32

Abstract: An epitaxial wafer having a void for separation of a substrate and a semiconductor device fabricated using the same. The epitaxial wafer includes a substrate, a mask pattern disposed on the substrate and comprising a masking region and an opening region, and an epitaxial layer covering the mask pattern. The epitaxial layer includes a void disposed on the masking region.The epitaxial layer can be separated from the growth substrate by applying chemical lift-off or stress lift-off, at the void.

Abstract translation: 具有用于分离衬底的空隙的外延晶片和使用其制造的半导体器件。 外延晶片包括衬底，设置在衬底上并包括掩模区域和开口区域的掩模图案以及覆盖掩模图案的外延层。 外延层包括设置在掩蔽区域上的空隙。 通过在空隙处施加化学剥离或应力剥离，外延层可以与生长衬底分离。

公开(公告)号：US20250048785A1

公开(公告)日：2025-02-06

申请号：US18923666

申请日：2024-10-22

Applicant: Seoul Viosys Co., Ltd.

Inventor： Seong Kyu JANG ,  Hong Suk CHO ,  Kyu Ho LEE ,  Chi Hyun IN

IPC: H01L33/02 ,  H01L23/00 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/46 ,  H01L33/48 ,  H01L33/62

Abstract: A light emitting device including a substrate, a first conductivity-type semiconductor layer, a mesa including a second conductivity-type semiconductor layer and an active layer, first and second contact electrodes respectively contacting the first and second conductivity-type semiconductor layers, a passivation layer covering the first and second contact electrodes, the mesa, and including first and second openings, and first and second bump electrodes electrically connected to the first and second contact electrodes, respectively, in which the first and second bump electrodes are disposed on the mesa, the passivation layer is disposed between the first bump electrode and the second contact electrode, the first contact electrode includes a reflective material, and a portion of the first opening is surrounded with a side surface of the mesa, and another portion of the first opening is not surrounded with the side surface of the mesa.

公开(公告)号：US20190019923A1

公开(公告)日：2019-01-17

申请号：US16125769

申请日：2018-09-10

Applicant: SEOUL VIOSYS CO., LTD

Inventor： Chi Hyun IN ,  Jun Yong PARK ,  Kyu Ho LEE ,  Dae Woong SUH ,  Jong Hyeon CHAE ,  Chang Hoon KIM ,  Sung Hyun LEE

IPC: H01L33/48 ,  H01L33/20 ,  H01L33/50 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L33/486 ,  H01L33/20 ,  H01L33/44 ,  H01L33/505 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0033

Abstract: Disclosed herein are a light emitting diode package and a method of manufacturing the same. The light emitting diode package includes: a substrate, a light-emitting layer disposed on a surface of the substrate and including a first type semiconductor layer, an active layer, and a second type semiconductor layer, a first bump disposed on the first type semiconductor layer and a second bump disposed the second type semiconductor layer, a protective layer covering at least the light-emitting layer, and a first bump pad and a second bump pad disposed on the protective layer and connected to the first bump and the second bump, respectively.