公开(公告)号：US20250014871A1

公开(公告)日：2025-01-09

申请号：US18406898

申请日：2024-01-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungwon CHO ,  Kyunghyun KIM ,  Ingi KIM ,  Sangki NAM ,  Dougyong SUNG ,  Sejin OH ,  Sungho JANG

IPC: H01J37/32 ,  H01L21/683

Abstract: According to an aspect of the present inventive concepts, a semiconductor processing apparatus includes: a chamber; an electrostatic chuck in an internal space of the chamber; a plurality of grid electrodes installed on the electrostatic chuck so as to be separated from each other in a first direction, perpendicular to an upper surface of the electrostatic chuck, and respectively having a plurality of through-holes; a plurality of reflectors between the plurality of grid electrodes and the electrostatic chuck and reflecting ions passing through the plurality of through-holes in each of the plurality of grid electrodes; and a voltage supply unit outputting a bias voltage having a predetermined cycle to at least one of the plurality of grid electrodes, wherein each of the plurality of grid electrodes includes a base plate containing a conductive material, and a cover layer covering a surface of the base plate and containing a metal oxide.

公开(公告)号：US20230187178A1

公开(公告)日：2023-06-15

申请号：US17993055

申请日：2022-11-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngil KANG ,  Byeongsang KIM ,  Jongmu KIM ,  Yongbeom PARK ,  Dougyong SUNG ,  Yunjae LEE ,  Seugkyu LIM ,  Kyuhee HAN

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J2237/335 ,  H01J37/32724

Abstract: A substrate processing apparatus includes: a process chamber; a substrate support structure disposed at a lower portion of the process chamber and configured to accommodate a substrate; and a gas supply module disposed at an upper portion of the process chamber and supplying a process gas to the substrate, wherein the gas supply module includes a showerhead that includes: a first showerhead body including a plurality of injection ports configured to transfer gas transferred from a gas inlet into the process chamber; and a coating layer covering the first showerhead body and including aluminum fluoride, wherein the first showerhead body includes a metal matrix composite (MMC).

公开(公告)号：US20240392426A1

公开(公告)日：2024-11-28

申请号：US18430308

申请日：2024-02-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younseon WANG ,  Jeonghoon NAM ,  Youngkwon KIM ,  Hyunseo CHOI ,  Keonwoo KIM ,  Dougyong SUNG ,  Junho IM

IPC: C23C8/36 ,  C23C8/80 ,  C23C16/44 ,  H01J37/32

Abstract: A method of surface treatment, includes: providing a component in a first process chamber; generating fluorine plasma with a remote plasma source connected to the first process chamber; and forming a protective layer on a surface of the component by providing the fluorine plasma to the first process chamber, wherein the protective layer comprises magnesium fluoride, wherein a magnesium content of the component is about 0.5 wt % to about 5.5 wt %, and wherein a thickness of the protective layer is about 100 nm to about 300 nm.

公开(公告)号：US20170140937A1

公开(公告)日：2017-05-18

申请号：US14940184

申请日：2015-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dougyong SUNG ,  Sejin OH ,  Je-Hun WOO ,  Hyunju LEE ,  Seungkyu LIM ,  Kiho HWANG

IPC: H01L21/263 ,  H01L21/66 ,  H01L21/683

CPC classification number: H01L21/2633 ,  H01J37/32935 ,  H01L21/31116 ,  H01L21/6831 ,  H01L22/26

Abstract: Provided are a semiconductor device fabricating apparatus configured to perform an atomic layer etching process and a method of fabricating a semiconductor device including performing the atomic layer etching process. The method includes loading a wafer onto an electrostatic chuck in a chamber, performing a first periodical process in which a first gas is supplied to an inside of the chamber and the first gas is adsorbed onto the wafer, performing a second periodical process in which a second gas is supplied to the inside of the chamber and the first gas remaining in the chamber is exhausted to an outside of the chamber, performing a third periodical process in which a third gas is supplied to the inside of the chamber, plasma including the third gas is generated, the plasma collides with the wafer, and the first gas adsorbed onto the wafer is removed, and unloading the wafer to the outside of the chamber.

公开(公告)号：US20230402258A1

公开(公告)日：2023-12-14

申请号：US18136448

申请日：2023-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yunhwan KIM ,  Dougyong SUNG ,  Namkyun KIM ,  Minsung KIM ,  Youngjin NOH

IPC: H01J37/32 ,  H01L21/683 ,  B33Y80/00

CPC classification number: H01J37/32449 ,  H01J37/32724 ,  H01J37/32568 ,  H01J37/32082 ,  H01L21/6833 ,  B33Y80/00 ,  H01J2237/2007 ,  H01J2237/032 ,  H01J2237/334 ,  H01J2237/2001

Abstract: A plasma processing apparatus includes a process chamber in which a substrate processing process is performed; an electrostatic chuck having a microcavity; a lower electrode disposed to be in contact with a lower surface of the electrostatic chuck; a high-frequency power supply applying high-frequency power to the lower electrode; a conductive supporter disposed to be spaced apart from a lower portion of the lower electrode and grounded thereto; and a discharge suppressor located between the lower electrode and the conductive supporter, having a gas supply flow path forming a portion of a gas supply line, and molded by three dimensional printing, wherein the gas supply flow path has a space portion having a length of 5 mm or less in a direction of an electric field formed by the high-frequency power and connecting upper and lower surfaces of the discharge suppressor.

公开(公告)号：US20230005713A1

公开(公告)日：2023-01-05

申请号：US17552698

申请日：2021-12-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee KIM ,  Dougyong SUNG ,  Taekjoon RHEE ,  Sungwook HONG ,  Hakyoung KIM ,  Sangmin JEONG

IPC: H01J37/32 ,  C23C16/02

Abstract: A method of manufacturing a semiconductor device includes: providing a first process gas including oxygen and a second process gas including carbon and fluorine to a process chamber at a first flow rate ratio to etch an etch target layer; and providing the first process gas and the second process gas to the process chamber at a second flow rate ratio to passivate the etch target layer, wherein a flow rate of the first process gas is substantially constant.

公开(公告)号：US20210104382A1

公开(公告)日：2021-04-08

申请号：US16891157

申请日：2020-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee KIM ,  Byunghun HAN ,  Hyeongmo KANG ,  Donghyeon NA ,  Dougyong SUNG ,  Seungbo SHIM ,  Minjae LEE ,  Myungsun CHOI ,  Minyoung HUR

IPC: H01J37/32 ,  H03H7/38 ,  H01L21/683 ,  H01L21/3065

Abstract: A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.

公开(公告)号：US20200234965A1

公开(公告)日：2020-07-23

申请号：US16812953

申请日：2020-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoyong PARK ,  Namjun KANG ,  Dougyong SUNG ,  Seungbo SHIM ,  Junghyun CHO ,  Myungsun CHOI

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L21/67

Abstract: Disclosed are a method of plasma etching and a method of fabricating a semiconductor device including the same. The method of plasma etching includes loading a substrate including an etch target onto a first electrode in a chamber, the chamber including the first electrode and a second electrode arranged to face each other, and etching the target. The etching the target includes applying a plurality of RF powers to one of the first and second electrodes. The plurality of RF powers may include a first RF power having a first frequency in a range from about 40 MHz to about 300 MHz, a second RF power having a second frequency in a range from about 100 kHz to about 10 MHz, and a third RF power having a third frequency in a range from about 10 kHz to about 5 MHz.

公开(公告)号：US20170271190A1

公开(公告)日：2017-09-21

申请号：US15420211

申请日：2017-01-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsung KIM ,  Myoung Soo PARK ,  Dougyong SUNG ,  Yun-Kwang JEON

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/6833 ,  H01J37/3211 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32715 ,  H01J37/32724 ,  H01J2237/334 ,  H01L21/67103 ,  H01L21/67248

Abstract: A substrate processing apparatus includes an electrostatic chuck which is made up of a base, a dielectric plate on the base, a chuck electrode in the dielectric plate, and a first heater section in the dielectric plate between the chuck electrode and the base. The first heater section includes first heaters that are separated from each other in a first direction, and respective first upper plate electrodes disposed between the first heaters and the base. The first upper plate electrodes are separated from each other in the first direction and respectively connected to the first heaters.

公开(公告)号：US20240159657A1

公开(公告)日：2024-05-16

申请号：US18202663

申请日：2023-05-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sejin OH ,  Sunggil KANG ,  Sangki NAM ,  Jeongmin BANG ,  Dougyong SUNG ,  Yeongkwang LEE ,  Sungho JANG ,  Jonghun PI

IPC: G01N21/25 ,  G01N21/31 ,  H01L21/67

CPC classification number: G01N21/255 ,  G01N21/3103 ,  H01L21/67069 ,  G01N2201/061 ,  G01N2201/062

Abstract: Provided is an apparatus configured to measure radical spatial density distribution including a process chamber including a viewport, a driving device configured to move a moving wall inside the process chamber, a light source configured to generate light, a collimator disposed in the viewport of the process chamber and configured to transmit light received from the light source to the moving wall and receive light reflected from the moving wall, and a spectrometer configured to receive the reflected light from the collimator, and measure radical spatial density based on analyzing an absorption amount of a spectrum of the received light.