公开(公告)号：US20210098261A1

公开(公告)日：2021-04-01

申请号：US17121233

申请日：2020-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chae Lyoung KIM ,  Tae-Hong KIM ,  Jung-Min OH ,  YUNGJUN KIM ,  INGI KIM ,  BOUN YOON ,  HYOSAN LEE ,  Sol HAN

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/67 ,  B24B37/20 ,  B24B53/017

Abstract: A cleaning method includes supplying, to a substrate by a dual nozzle, a first chemical liquid and a first spray, the first spray including a first liquid dissolving the first chemical liquid, and moving the dual nozzle in a first direction. The the dual nozzle comprises a first nozzle and a second nozzle, the first nozzle supplies the first spray to the substrate and the second nozzle supplies the first chemical liquid to the substrate while the dual nozzle moves in the first direction, the first nozzle proceeds ahead of the second nozzle in the first direction while the dual nozzle moves in the first direction, and the first nozzle has a distance 3 cm to 7 cm from the second nozzle.

公开(公告)号：US20190284701A1

公开(公告)日：2019-09-19

申请号：US16139506

申请日：2018-09-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soojin KIM ,  Hyo-Sun LEE ,  Jung-Min OH ,  Hyosan LEE ,  Donghyun KIM ,  Haksoo KIM ,  Jung Jae OH ,  Myung Ho LEE

IPC: C23C22/48 ,  C09K13/08 ,  C09K13/06 ,  H01L21/3213 ,  H01L21/02

Abstract: A pre-treatment composition for use before etching SiGe includes an acid, an alcohol, and a silane compound having a chemical formula R—Si(R1)n(OR2)3-n in which R is (C3-C20)alkyl, (C6-C12)aryl, (C6-C12)aryl(C3-C20)alkyl, or (C3-C20)alkyl(C6-C12)aryl, R1 is hydrogen, hydroxyl, halogen, (C1-C20)alkyl, halo(C1-C20)alkyl, (C6-C12)aryl, (C6-C12)aryl(C1-C20)alkyl, or (C1-C20)alkyl(C6-C12)aryl, R2 is hydrogen, (C1-C20)alkyl, halo(C1-C20)alkyl, (C6-C12)aryl, (C6-C12)aryl(C1-C20)alkyl, or (C1-C20)alkyl(C6-C12)aryl, n is an integer of 0 to 2, and the alkyl, aryl, arylalkyl, or alkylaryl of R, and the alkyl, haloalkyl, aryl, arylalkyl, or alkylaryl of R1 may be further substituted with at least one substituent selected from halogen, hydroxyl, —N(R11)(R12), and —S(R13), where each of the R11, the R12 and the R13 is independently hydrogen or (C1-C20)alkyl.

公开(公告)号：US20190241844A1

公开(公告)日：2019-08-08

申请号：US16250069

申请日：2019-01-17

Applicant: Samsung Electronics Co., Ltd. ,  SEMES Co., Ltd.

Inventor： Mi Hyun PARK ,  Jung-Min OH ,  Young-Hoo KIM ,  Hyo San LEE ,  Tae Keun KIM ,  Ye Rim YEON ,  Hae Rim OH ,  Ji Soo JEONG ,  Min Hee CHO

IPC: C11D11/00 ,  H01L21/67 ,  H01L21/687 ,  H01L21/02 ,  B08B3/10 ,  C11D17/00 ,  C11D1/14 ,  C11D3/20 ,  C11D3/34 ,  C11D3/32 ,  C11D3/28

CPC classification number: C11D11/0047 ,  B08B3/10 ,  C11D1/146 ,  C11D3/201 ,  C11D3/2017 ,  C11D3/2044 ,  C11D3/2096 ,  C11D3/28 ,  C11D3/32 ,  C11D3/3445 ,  C11D17/0008 ,  H01L21/02057 ,  H01L21/67051 ,  H01L21/68764

Abstract: A cleaning composition, a cleaning apparatus, and a method of fabricating a semiconductor device, the cleaning composition including a surfactant; deionized water; and an organic compound, wherein the surfactant is included in the cleaning composition in a concentration of about 0.28M to about 0.39 M or a mole fraction of about 0.01 to about 0.017, and wherein the organic compound is included in the cleaning composition in a concentration of about 7.1 M to about 7.5 M or a mole fraction of about 0.27 to about 0.035.

公开(公告)号：US20190057882A1

公开(公告)日：2019-02-21

申请号：US15867791

申请日：2018-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Hong KIM ,  Jung-Min OH ,  Jin-Kyu KIM ,  So-Young PARK ,  Kang-Suk LEE

IPC: H01L21/67 ,  B05B7/24 ,  B05B7/04 ,  B05B12/08 ,  B05B13/02 ,  B08B3/02 ,  B08B3/10

Abstract: A nozzle includes a nozzle body having a hollow portion, and a mixing chamber and a discharge guide sequentially connected to the hollow portion, and an engagement member having a gas supply passage formed to supply a gas therethrough, inserted and fixed into the hollow portion and spaced apart from an inner face of the hollow portion to form a liquid gas supply passage which supplies a liquid toward a central axis of an exit of the gas supply passage. The mixing chamber is connected to the gas supply passage and the liquid supply passage to form liquid droplets. The gas supply passage has a first cross-sectional area, the mixing chamber has a second cross-sectional area substantially the same as the first cross-sectional area, and the discharge guide has a third cross-sectional area smaller than the first cross-sectional area.

公开(公告)号：US20240263072A1

公开(公告)日：2024-08-08

申请号：US18354055

申请日：2023-07-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heesuk WOO ,  Kyusang AHN ,  Jung-Min OH ,  Jiwon KIM ,  Jinkyu ROH ,  Hyojoong YOON ,  Sang Won BAE ,  Kyungmo SUNG

IPC: C09K13/08 ,  H01L21/306

CPC classification number: C09K13/08 ,  H01L21/30604

Abstract: The present disclosure relates to an etchant composition for etching silicon and silicon germanium, and/or a preparation method of a pattern using the etchant composition. The etchant composition may include an oxidizing agent, a fluorine-based compound, a surfactant represented by Chemical Formula 1 or 2, and water. The etchant composition may include the surfactant in an amount of 5% to 40% by weight based on 100% by weight of the etchant composition.

公开(公告)号：US20180315613A1

公开(公告)日：2018-11-01

申请号：US16020585

申请日：2018-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chae Lyoung KIM ,  Tae-Hong KIM ,  Jung-Min OH ,  YUNGJUN KIM ,  INGI KIM ,  BOUN YOON ,  HYOSAN LEE ,  Sol HAN

IPC: H01L21/306 ,  H01L21/67 ,  B24B37/20 ,  H01L21/02 ,  B24B53/017

CPC classification number: H01L21/30625 ,  B24B37/20 ,  B24B53/017 ,  H01L21/02057 ,  H01L21/02065 ,  H01L21/02074 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/67173 ,  H01L21/67219

Abstract: A cleaning apparatus for removing particles from a substrate is provided. The cleaning apparatus includes a first cleaning unit including a first dual nozzle supplying, to a substrate, a first chemical liquid and a first spray including a first liquid dissolving the first chemical liquid, and a second cleaning unit including a second dual nozzle supplying, to the substrate, a second chemical liquid different from the first chemical liquid and a second spray including a second liquid dissolving the second chemical liquid and being the same as the first liquid.

公开(公告)号：US20180096856A1

公开(公告)日：2018-04-05

申请号：US15833184

申请日：2017-12-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoung Hwan KIM ,  Ingi KIM ,  Mihyun PARK ,  Young-Hoo KIM ,  Ui-soon PARK ,  Jung-Min OH ,  Kuntack LEE ,  Hyosan LEE

IPC: H01L21/311 ,  H01L21/67

CPC classification number: H01L21/31111 ,  H01L21/67086 ,  H01L21/67253 ,  H01L21/67288

Abstract: A substrate treating apparatus and a method of treating a substrate, the apparatus including a substrate treater that treats a substrate using a chemical solution, the chemical solution including a phosphoric acid aqueous solution and a silicon compound; and a chemical solution supplier that supplies the chemical solution to the substrate treating unit, wherein the chemical solution supplier includes a concentration measurer that measures concentrations of the chemical solutions, the concentration measurer including a first concentration measurer that measures a water concentration of the chemical solution; and a second concentration measurer that measures a silicon concentration of the chemical solution.

公开(公告)号：US20170301553A1

公开(公告)日：2017-10-19

申请号：US15428963

申请日：2017-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chae Lyoung KIM ,  Tae-Hong KIM ,  Jung-Min OH ,  YUNGJUN KIM ,  INGI KIM ,  BOUN YOON ,  HYOSAN LEE ,  Sol HAN

IPC: H01L21/306 ,  H01L21/67 ,  H01L21/02 ,  B24B53/017 ,  B24B37/20

CPC classification number: H01L21/30625 ,  B24B37/20 ,  B24B53/017 ,  H01L21/02057 ,  H01L21/02065 ,  H01L21/02074 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/67173 ,  H01L21/67219

Abstract: A cleaning apparatus for removing particles from a substrate is provided. The cleaning apparatus includes a first cleaning unit including a first dual nozzle supplying, to a substrate, a first chemical liquid and a first spray including a first liquid dissolving the first chemical liquid, and a second cleaning unit including a second dual nozzle supplying, to the substrate, a second chemical liquid different from the first chemical liquid and a second spray including a second liquid dissolving the second chemical liquid and being the same as the first liquid.

公开(公告)号：US20170069485A1

公开(公告)日：2017-03-09

申请号：US15176972

申请日：2016-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon JEONG ,  Jung-Min OH ,  Kuntack LEE ,  Hyosan LEE

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02057 ,  H01L21/02041 ,  H01L21/02052 ,  H01L21/02101 ,  H01L21/31111 ,  H01L21/67028 ,  H01L21/67253 ,  H01L21/67276

Abstract: In embodiment, the method includes cleaning a preceding substrate, and drying the preceding substrate and cleaning a next substrate. Drying the preceding substrate and cleaning the next substrate include determining a cleaning start time of the next substrate, and the cleaning start time corresponds to a desired time point after starting drying the preceding substrate.

Abstract translation: 在实施例中，该方法包括清洗前面的衬底，干燥前面的衬底并清洁下一个衬底。 干燥前面的衬底并清洁下一个衬底包括确定下一个衬底的清洁开始时间，并且清洁开始时间对应于在开始干燥前面的衬底之后的期望时间点。

公开(公告)号：US20160368030A1

公开(公告)日：2016-12-22

申请号：US15142298

申请日：2016-04-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ingi KIM ,  Kyoung Hwan KIM ,  SeokHoon KIM ,  Sang Won BAE ,  Jung-Min OH ,  Kuntack LEE ,  Hyosan LEE

IPC: B08B3/10 ,  B01F15/00 ,  H01L21/66 ,  H01L21/67 ,  H01L21/02 ,  B08B3/08 ,  B08B3/02

CPC classification number: H01L22/26 ,  B01F3/088 ,  B01F15/0022 ,  H01L21/02057 ,  H01L21/67017 ,  H01L21/67051

Abstract: Disclosed is a substrate processing system including a nozzle to supply a chemical solution containing a mixture of first and second solutions onto a substrate loaded on a supporter of a process chamber, a chemical solution supplying system to supply the chemical solution to the nozzle, and a controller to control the chemical solution supplying system. The chemical solution supplying system may include a mixing tank mixing a plurality of chemicals to produce the first solution, a supply tank receiving the first solution from the mixing tank and producing the chemical solution, a connection line to connect the mixing tank to the supply tank, and a valve and a pump on the connection line. The pump is controlled to allow the first solution to be supplied into the supply tank at a predetermined supply amount per stroke.

Abstract translation: 公开了一种基板处理系统，其包括：喷嘴，其将含有第一和第二溶液的混合物的化学溶液供应到负载在处理室的支撑体上的基板上;将化学溶液供给到喷嘴的化学溶液供给系统;以及 控制器控制化学溶液供应系统。 化学溶液供给系统可以包括混合多种化学品以制备第一溶液的混合罐，从混合罐接收第一溶液并产生化学溶液的供应罐，将混合罐连接到供应罐的连接管线 ，以及连接线上的阀和泵。 控制泵以允许第一溶液以每冲程以预定的供给量供应到供应罐中。