公开(公告)号：US20240028814A1

公开(公告)日：2024-01-25

申请号：US18348469

申请日：2023-07-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： QHwan KIM ,  Jaeyoon KIM ,  Hyeonkyun NOH ,  Ami MA ,  Sunghee LEE ,  Kyubaik CHANG ,  Wooyoung CHEON ,  Jaehoon JEONG

IPC: G06F30/398

CPC classification number: G06F30/398 ,  G06F2111/20

Abstract: A method for measuring a structure based on a spectrum, includes obtaining a first model that includes a first sub-model and a second sub-model following the first sub-model and is trained based on simulation data, generating a second model including a third sub-model identical to the first sub-model, training the second model based on sample spectrum data generated by measuring spectra of sample structures, and estimating, based on the trained second model, the structure from measured spectrum data generated by measuring a spectrum of the structure.

公开(公告)号：US20210158173A1

公开(公告)日：2021-05-27

申请号：US16909132

申请日：2020-06-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonik JANG ,  Sanghoon MYUNG ,  Changwook JEONG ,  Sunghee LEE

IPC: G06N3/08 ,  G06N3/04

Abstract: A non-transitory computer-readable medium storing a program code including an image generation model, which when executed, causes a processor to input input data including sampling data of some of a plurality of semiconductor dies of a wafer to a generator network of the image generation model and output a wafer map indicating the plurality of semiconductor dies, and to input the wafer map output from the generator network to a discriminator network of the image generation model and discriminate the wafer map.

公开(公告)号：US20240211755A1

公开(公告)日：2024-06-27

申请号：US18453651

申请日：2023-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunghee LEE ,  QHwan KIM ,  Minkyu KIM ,  Bongseok KIM ,  Youngseok KIM ,  Ami MA ,  Jinkook PARK ,  Kyubaik CHANG ,  Jaehoon JEONG

IPC: G06N3/08

CPC classification number: G06N3/08

Abstract: Provided are a method of providing an artificial intelligence (AI) algorithm, an operation method of an AI algorithm, an electronic device, a recording medium, and a computer program. The method of providing the AI algorithm includes loading data sets with respect to a spectrum of a semiconductor and a structure of the semiconductor, calculating an out of distribution (OOD) index with respect to the spectrum of the semiconductor, performing data split by clustering sampling the data sets into at least one learning data set with respect to OOD indexes according to semiconductors, and providing an optimal AI algorithm from among a plurality of AI algorithms that have learned the at least one learning data set.

公开(公告)号：US20230221049A1

公开(公告)日：2023-07-13

申请号：US18124335

申请日：2023-03-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Munsub KIM ,  Hyunwuk KANG ,  Jiho BAEK ,  Hyeongjoon SEO ,  Duhan JUNG ,  Jaewoo CHOI ,  Junyeong KIM ,  Taeryong SEONG ,  Sunghee LEE

IPC: F25B41/40 ,  F25B40/02 ,  F16L55/02

CPC classification number: F25B41/40 ,  F25B40/02 ,  F16L55/02 ,  F25B2500/13 ,  F25B2400/075

Abstract: An air conditioner is disclosed. The air conditioner comprises: a compressor for compressing a refrigerant; a discharge pipe for guiding the refrigerant discharged from the compressor; an accumulator for storing the refrigerant flowing into the compressor from an outdoor heat exchanger or an indoor heat exchanger; a suction pipe for guiding the refrigerant discharged from the accumulator to the compressor; a subcooler disposed in a pipe between the outdoor heat exchanger and the indoor heat exchanger so as to secure a degree of subcooling of the refrigerant; an injection pipe for guiding a refrigerant superheated in the subcooler to the compressor; and a fixing member provided for fixing the discharge pipe, the suction pipe, and the injection pipe together.

公开(公告)号：US20220232459A1

公开(公告)日：2022-07-21

申请号：US17573045

申请日：2022-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunghee LEE

IPC: H04W48/16 ,  H04W36/00 ,  H04W76/18 ,  H04W48/20

Abstract: An electronic device according to an embodiment of the disclosure includes a communication circuit, a memory, and a processor configured to be operatively connected to the communication circuit and the memory. The processor may be configured to control the communication circuit to perform wireless communication through a first access point, to search for another access point while performing communication through the first access point, and attempt to connect to a candidate access point selected based on a block list stored in the memory, and to store, when a designated event occurs while attempting to connect to the candidate access point, a recovery condition configured according to a type of the designated event together with identification information of the candidate access point in the block list.

公开(公告)号：US20210092657A1

公开(公告)日：2021-03-25

申请号：US16994344

申请日：2020-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Madhan Raj KANAGARATHINAM ,  Chounjong NAM ,  Gaurav SINHA ,  Gunjan kumar CHOUDHARY ,  Karthikeyan ARUNACHALAM ,  Sunghee LEE ,  Sujith Rengan JAYASEELAN ,  Dronamraju Siva SABAREESH ,  Harikrishnan Natarajan ,  Jaheon GU

IPC: H04W36/04 ,  H04W80/06 ,  H04L29/06 ,  H04W36/00

Abstract: Disclosed herein is a method and network handover system for handling a data session in a user equipment (UE). The method comprises initiating a data session of at least one application from a plurality of applications with a first communication interface using a first socket of the UE having a first socket file descriptor (SOCKFD) for the data session, detecting a deterioration in a network connection of the first communication interface, identifying a second communication interface, establishing a second socket having a second SOCKFD associated with the second communication interface and migrating the data session from the first communication interface to the second communication interface by mapping the first SOCKFD corresponding to the first socket to the second SOCKFD corresponding to the second socket.

公开(公告)号：US20160049564A1

公开(公告)日：2016-02-18

申请号：US14656298

申请日：2015-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kunmo CHU ,  Changyoul MOON ,  Sunghee LEE ,  Junsik HWANG

IPC: H01L33/62 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L25/50 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/73 ,  H01L24/82 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L33/0079 ,  H01L2224/04026 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/24146 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29155 ,  H01L2224/32145 ,  H01L2224/32503 ,  H01L2224/33181 ,  H01L2224/48225 ,  H01L2224/73204 ,  H01L2224/73217 ,  H01L2224/73227 ,  H01L2224/73253 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82101 ,  H01L2224/83005 ,  H01L2224/83193 ,  H01L2224/83204 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/83948 ,  H01L2224/92 ,  H01L2224/9202 ,  H01L2224/92144 ,  H01L2224/92244 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3512 ,  H01L2933/0066 ,  H01L2224/83 ,  H01L2924/014 ,  H01L21/78 ,  H01L2224/81 ,  H01L2224/45099

Abstract: A semiconductor device includes a base substrate and a semiconductor chip on the base substrate, the semiconductor chip including a first layer structure and a second layer structure opposite to the first layer structure, at least one of the first and second layer structures including a semiconductor device portion, and a bonding structure between the first layer structure and the second layer structure, the bonding structure including a silver-tin (Ag—Sn) compound and a nickel-tin (Ni—Sn) compound.

Abstract translation: 半导体器件包括基底基板和基底基板上的半导体芯片，该半导体芯片包括第一层结构和与第一层结构相对的第二层结构，第一和第二层结构中的至少一个包括半导体器件 所述第一层结构和所述第二层结构之间的接合结构，所述接合结构包括银 - 锡（Ag-Sn）化合物和镍 - 锡（Ni-Sn）化合物。

公开(公告)号：US20240159469A1

公开(公告)日：2024-05-16

申请号：US18374882

申请日：2023-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunghee LEE ,  Jiho BAEK ,  Hyunwuk KANG ,  Duhan JUNG ,  Jaewoo CHOI

IPC: F28D7/10

CPC classification number: F28D7/10

Abstract: A heat exchanger including an inner tube including a bending portion, a first heat exchange portion extending from the bending portion, and a second heat exchange portion extending from the bending portion; a first outer tube forming a first double-tube structure around the first heat exchange portion; a second outer tube forming a second double-tube structure around the second heat exchange portion; and a first connection tube connecting a first through hole of the first outer tube and a second through hole of the second outer tube so as to connect the first outer tube and the second outer tube, wherein a first refrigerant is flowable through the heat exchange portions and the bending portion, a second refrigerant is flowable through the outer tubes and the first connection tube, and the second refrigerant exchanges heat with the first refrigerant at boundaries between the respective outer tubes and heat exchange portions.

公开(公告)号：US20210395888A1

公开(公告)日：2021-12-23

申请号：US17336773

申请日：2021-06-02

Applicant: Samsung Electronics Co., Ltd. ,  INCHEON NATIONAL UNIVERSITY RESEARCH & BUSINESS FOUNDATION

Inventor： Eunhyoung CHO ,  Hanboram LEE ,  Sunghee LEE ,  Jeongyub LEE ,  Chi Thang NGUYEN

IPC: C23C16/455 ,  C23C16/40

Abstract: A method and an apparatus for filling a gap by using an atomic layer deposition (ALD) method are provided. The method includes forming a first reaction inhibition layer by adsorbing a reaction inhibitor onto a side wall of the gap, forming a first precursor layer by adsorbing a first reactant onto the bottom of the gap and the side wall of the gap around the bottom of the gap, and forming a first atomic layer on the bottom of the gap and the side wall of the gap around the bottom of the gap. The reaction inhibitor includes a precursor material that does not react with a second reactant. The first reaction inhibition layer may have a density gradient in which a density of the reaction inhibitor decreases toward a bottom of the gap. The forming the first atomic layer includes adsorbing the second reactant onto the first precursor layer.

公开(公告)号：US20210126829A1

公开(公告)日：2021-04-29

申请号：US17079292

申请日：2020-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Madhan Raj KANAGARATHINAM ,  Shiva Souhith GANTHA ,  Anshuman NIGAM ,  Karthikeyan ARUNACHALAM ,  Sunghee LEE ,  Sujith Rengan JAYASEELAN

IPC: H04L12/24 ,  H04L29/12

Abstract: Methods and systems for determining ICN capability of a node/server. The ICN capability is determined based on DNS resource records or TCP options. The DNS resource records are DNS queries that are sent to a DNS server, for determining the ICN capability of the server. The DNS query includes a content to indicate the intent to determine the ICN capability. If the server is having ICN capability, a DNS response is received from the DNS server, which includes the content that is identical to the content in the DNS query. A server is selected, amongst multiple servers, for transferring ICN packets, based on locations and priorities of the multiple servers, indicated in DNS responses, and an order of issuance of DNS queries to the DNS server. TCP options in the header of TCP packets are used for determining ICN capability of the nodes/servers and parameters pertaining to the ICN capability.