公开(公告)号：US20210273039A1

公开(公告)日：2021-09-02

申请号：US17324492

申请日：2021-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youn-soo KIM ,  Seung-min RYU ,  Chang-su WOO ,  Hyung-suk JUNG ,  Kyu-ho CHO ,  Youn-joung CHO

IPC: H01L49/02 ,  H01L27/108

Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.

公开(公告)号：US20190292207A1

公开(公告)日：2019-09-26

申请号：US16439369

申请日：2019-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee PARK ,  Youn-soo KIM ,  Jae-soon LIM ,  Youn-joung CHO ,  Haruyoshi SATO ,  Naoki YAMADA ,  Hiroyuki UCHIUZOU

IPC: C07F7/10

Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

公开(公告)号：US20190152996A1

公开(公告)日：2019-05-23

申请号：US16251236

申请日：2019-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee PARK ,  Youn-soo KIM ,  Jae-soon LIM ,  Youn-joung CHO ,  Kazuki HARANO ,  Haruyoshi SATO ,  Tsubasa SHIRATORI ,  Naoki YAMADA

IPC: C07F5/00 ,  C23C16/455 ,  C23C16/34 ,  H01L27/28 ,  H01L51/00 ,  H01L51/05

Abstract: A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below, wherein, in Formula 1, R1 is a hydrogen atom or a C1-C4 linear or branched alkyl group, R2 and R3 are each independently a hydrogen atom or a C1-C5 linear or branched alkyl group, at least one of R2 and R3 being a C3-C5 branched alkyl group, and R4 is a hydrogen atom or a C1-C4 linear or branched alkyl group.

公开(公告)号：US20170186614A1

公开(公告)日：2017-06-29

申请号：US15294818

申请日：2016-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cha-won KO ,  Hyun-woo KIM ,  Youn-joung CHO ,  Jin-kyu HAN

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/02

CPC classification number: H01L21/0337 ,  G03F7/0382 ,  G03F7/36 ,  G03F7/40 ,  G03F7/405 ,  H01L21/02118 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/0231 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/31144

Abstract: A method of forming a semiconductor device includes forming an etching layer on a substrate, forming a photoresist layer on the etching layer, forming an exposed area configured to define an unexposed area in the photoresist layer, forming a hardmask layer on the exposed area using a selective deposition process, partially removing the photoresist layer using the hardmask layer as an etch mask and forming a photoresist pattern, and etching the etching layer using the photoresist pattern as an etch mask and forming a fine pattern.

公开(公告)号：US20190279862A1

公开(公告)日：2019-09-12

申请号：US16292939

申请日：2019-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-wook PARK ,  Tae-jin YIM ,  Youn-joung CHO ,  Hiroshi MORITA ,  Yasuhisa FURIHATA

IPC: H01L21/02 ,  H01L21/762 ,  H01L27/108

Abstract: A method of forming an oxide layer, the method including forming a first material layer on a semiconductor substrate, the first material layer including a polysiloxane material, wherein, from among Si—H1, Si—H2, and Si—H3 bonds included in the polysiloxane material, a percentage of Si—H2 bonds ranges from about 40% to about 90%, performing a first annealing process on the first material layer in an inert atmosphere, and performing a second annealing process on the first material layer in an oxidative atmosphere.

公开(公告)号：US20190144472A1

公开(公告)日：2019-05-16

申请号：US16249067

申请日：2019-01-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min RYU ,  Youn-soo KIM ,  Jae-soon LIM ,  Youn-joung CHO ,  Myong-woon KIM ,  Kang-yong LEE ,  Sang-ick LEE ,  Sang-yong JEON

IPC: C07F7/22 ,  C23C16/40 ,  C23C16/455

Abstract: A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): wherein R1, R2, Q1, Q2, Q3, and Q4 are each independently a C1 to C4 linear or branched alkyl group.

公开(公告)号：US20180019135A1

公开(公告)日：2018-01-18

申请号：US15423027

申请日：2017-02-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee PARK ,  Jae-soon LIM ,  Youn-joung CHO

IPC: H01L21/285 ,  H01L49/02 ,  H01L29/66

CPC classification number: H01L21/28556 ,  H01L27/11582 ,  H01L28/60 ,  H01L29/66795

Abstract: Provided are an aluminum compound represented by General Formula (I), a method of forming a thin film, and a method of fabricating an integrated circuit device.

公开(公告)号：US20180155372A1

公开(公告)日：2018-06-07

申请号：US15827317

申请日：2017-11-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min RYU ,  Youn-soo KIM ,  Jae-soon LIM ,  Youn-joung CHO ,  Myong-woon KIM ,  Kang-yong LEE ,  Sang-ick LEE ,  Sang-yong JEON

IPC: C07F7/22 ,  C23C16/455

CPC classification number: C07F7/2284 ,  C23C16/407 ,  C23C16/45553

Abstract: A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): wherein R1, R2, Q1, Q2, Q3, and Q4 are each independently a Cl to C4 linear or branched alkyl group.

公开(公告)号：US20170178961A1

公开(公告)日：2017-06-22

申请号：US15298275

申请日：2016-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min RYU ,  Takanori KOIDE ,  Naoki YAMADA ,  Jae-soon LIM ,  Tsubasa SHIRATORI ,  Youn-joung CHO

IPC: H01L21/8234 ,  H01L27/06 ,  C23C16/455 ,  C01B21/06 ,  C09D5/24 ,  B05D1/00 ,  H01L21/02 ,  H01L27/088

CPC classification number: H01L21/02183 ,  C07F9/00 ,  C23C16/16 ,  C23C16/34 ,  C23C16/405 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45525 ,  H01L21/0215 ,  H01L21/0228 ,  H01L28/00

Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):

公开(公告)号：US20170152277A1

公开(公告)日：2017-06-01

申请号：US15363088

申请日：2016-11-29

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  L'Air Liquide, Societe Anonyme Pour L'etude et L'exploitation des Procedes Georges Claude

Inventor： Jae-soon LIM ,  Gyu-hee PARK ,  Youn-joung CHO ,  Clement LANSALOT ,  Won-tae NOH ,  Julien LIEFFRIG ,  Joo-ho LEE

IPC: C07F17/00 ,  H01L21/28 ,  H01L21/02 ,  C09D5/24 ,  H01L29/49 ,  H01L29/51 ,  H01L49/02 ,  H01L27/108 ,  H01L21/285 ,  H01L29/66

CPC classification number: C07F17/00 ,  C09D5/24 ,  H01L21/02189 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/28568 ,  H01L27/1085 ,  H01L27/10855 ,  H01L27/10879 ,  H01L28/60 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66795

Abstract: Disclosed herein is a method of forming a thin film. The method includes forming a niobium-containing film by using a niobium precursor composition and a reactant, the niobium precursor composition including a niobium compound represented by Formula (1): Nb(R5Cp)2(L)  Formula (1) (where each R is independently H, a C1 to C6 alkyl group, or R13Si, with each R1 being independently H or a C1 to C6 alkyl group, Cp is a cyclopentadienyl group, and L is selected from among formamidinates (NR, R′-fmd), amidinates (NR, R′, R″-amd), and guanidinates (NR, R′, NR″, R′″-gnd)).