公开(公告)号：US10025661B1

公开(公告)日：2018-07-17

申请号：US15391455

申请日：2016-12-27

Applicant: SanDisk Technologies LLC

Inventor： Pitamber Shukla ,  Joanna Lai ,  Henry Chin ,  Deepak Raghu ,  Abhilash Kashyap

IPC: G06F11/00 ,  G06F11/10 ,  G11C29/52 ,  G11C16/34 ,  G11C16/28 ,  G11C16/10

Abstract: Technology is described herein for operating non-volatile storage. In one embodiment, the memory system tracks which adjustments to default values for hard bit read reference voltages are most frequently successful to decode data in non-volatile memory cells. In response to a process that uses only hard bits failing to successfully decode data in a group of the non-volatile memory cells, the memory system attempts to decode the data in the group of non-volatile memory cells using dynamic hard bit read reference voltages and dynamic soft bit read reference voltages that correspond to only a subset of the most frequently successful adjustments to the default values for the hard bit read reference voltages. By only using a subset of the most frequently successful adjustments to the default values for the hard bit read reference voltages time and power is saved.

公开(公告)号：US20180053562A1

公开(公告)日：2018-02-22

申请号：US15240188

申请日：2016-08-18

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Phil Reusswig ,  Joanna Lai ,  Deepak Raghu ,  Grishma Shah ,  Nian Niles Yang

IPC: G11C16/34 ,  G06F3/06 ,  G06F11/10 ,  G11C29/52 ,  G11C16/22 ,  G11C16/26

CPC classification number: G11C16/3431 ,  G06F11/1068 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/3427 ,  G11C29/021 ,  G11C29/028 ,  G11C29/50004 ,  G11C29/52 ,  G11C2029/0409

Abstract: A non-volatile memory system includes technology for detecting read disturb in open blocks. In one embodiment, the system determines whether a particular block of non-volatile memory cells has been subjected to a minimum number of open block read operations and performs sensing operations for memory cells connected to an open word line of the particular block. The number of errors in the sensed data is determined. If the number of errors is greater than a limit, then the system takes an action to mitigate the read disturb.

公开(公告)号：US20180046231A1

公开(公告)日：2018-02-15

申请号：US15237139

申请日：2016-08-15

Applicant: SanDisk Technologies LLC

Inventor： Deepak Raghu ,  Pao-Ling Koh ,  Philip Reusswig ,  Chris Nga Yee Yip ,  Jun Wan ,  Yan Li

IPC: G06F1/20 ,  G06F3/06

CPC classification number: G06F1/206 ,  G06F1/3225 ,  G06F1/3275 ,  G06F3/0616 ,  G06F3/0653 ,  G06F3/0688

Abstract: A storage device with a memory may modify throttling to reduce cross temperature effects. The decision to throttle may be based on a memory device temperature (i.e. temperature throttling) or may be based on the memory device's health, usage, or performance (e.g. hot count or bit error rate). Temperature throttling may be implemented that considers the memory device's health, usage, or performance (e.g. hot count or bit error rate). Likewise, throttling based on the memory device's health, usage, or performance may utilize the memory device's temperature to optimize throttling time. For example, a test mode matrix (TMM) may be modified to depend on temperature.

公开(公告)号：US09741444B2

公开(公告)日：2017-08-22

申请号：US15483169

申请日：2017-04-10

Applicant: SanDisk Technologies LLC

Inventor： Philip Reusswig ,  Harish Singidi ,  Deepak Raghu ,  Gautam Dusija ,  Pao-Ling Koh ,  Chris Avila

IPC: G11C16/04 ,  G11C16/34 ,  G11C16/26 ,  G11C11/56 ,  G06F11/10

CPC classification number: G11C16/3431 ,  G06F11/1072 ,  G11C11/5642 ,  G11C16/26 ,  G11C16/3422 ,  G11C16/349 ,  G11C29/52

Abstract: Methods and systems are provided where non-volatile solid state memory may include selected memory cells coupled to a selected word line and proxy memory cells coupled to a proxy word line. The selected memory cells may be non-adjacent to the proxy memory cells and be selected for a read operation. A read proxy voltage may be applied to the proxy word line when data is read from the selected memory cells. A read disturb may be determined based on a difference between a predetermined value stored in the proxy memory cells and a value read from the proxy memory cells.

公开(公告)号：US20170213599A1

公开(公告)日：2017-07-27

申请号：US15483169

申请日：2017-04-10

Applicant: SanDisk Technologies LLC

Inventor： Philip Reusswig ,  Harish Singidi ,  Deepak Raghu ,  Gautam Dusija ,  Pao-Ling Koh ,  Chris Avila

IPC: G11C16/34 ,  G11C11/56 ,  G06F11/10 ,  G11C16/26

CPC classification number: G11C16/3431 ,  G06F11/1072 ,  G11C11/5642 ,  G11C16/26 ,  G11C16/3422 ,  G11C16/349 ,  G11C29/52

Abstract: Methods and systems are provided where non-volatile solid state memory may include selected memory cells coupled to a selected word line and proxy memory cells coupled to a proxy word line. The selected memory cells may be non-adjacent to the proxy memory cells and be selected for a read operation. A read proxy voltage may be applied to the proxy word line when data is read from the selected memory cells. A read disturb may be determined based on a difference between a predetermined value stored in the proxy memory cells and a value read from the proxy memory cells.

公开(公告)号：US09679661B1

公开(公告)日：2017-06-13

申请号：US15195492

申请日：2016-06-28

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Zelei Guo ,  Joanna Lai ,  Deepak Raghu

IPC: G11C16/06 ,  G11C16/26 ,  G11C16/04 ,  G11C16/08 ,  G06F11/07 ,  G11C7/06 ,  G11C16/28

CPC classification number: G11C16/26 ,  G06F11/22 ,  G11C7/062 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/28 ,  G11C29/021 ,  G11C29/028 ,  G11C29/12 ,  G11C29/16 ,  G11C29/50004 ,  G11C29/52 ,  G11C2029/0409 ,  G11C2029/0411 ,  G11C2029/1204 ,  G11C2029/5002

Abstract: Performance improvement features can improve the performance of read processes under the right conditions. In order to selectively use the performance improvement features, the system conducts active read sampling to obtain information about bit error rate and then enables the performance improvement feature(s) for future read processes based on the information about bit error rate.

公开(公告)号：US09633738B1

公开(公告)日：2017-04-25

申请号：US15195583

申请日：2016-06-28

Applicant: SanDisk Technologies LLC

Inventor： Zelei Guo ,  Pao-Ling Koh ,  Henry Chin ,  Pitamber Shukla ,  Deepak Raghu ,  Dana Lee

IPC: G11C16/04 ,  G11C16/16 ,  G11C16/10 ,  G11C16/30

CPC classification number: G11C16/16 ,  G11C16/10 ,  G11C16/14 ,  G11C16/22 ,  G11C16/30

Abstract: A storage system includes a controller that is configured to make host data inaccessible. To do so, the controller may control power control circuitry to supply pulses to storage locations storing host data. The pulses may include flash write pulses but no erase pulses, or a combination of flash write pulses and erase pulses. If erase pulses are supplied, the number of the erase pulses may be less than the number supplied for performance of a default erase operation.

公开(公告)号：US09552171B2

公开(公告)日：2017-01-24

申请号：US14526870

申请日：2014-10-29

Applicant: SanDisk Technologies LLC

Inventor： Yichao Huang ,  Chris Avila ,  Dana Lee ,  Henry Chin ,  Deepanshu Dutta ,  Sarath Puthenthermadam ,  Deepak Raghu

IPC: G06F12/00 ,  G06F3/06 ,  G06F12/02 ,  G11C16/04 ,  G11C16/34

CPC classification number: G06F3/0647 ,  G06F3/0608 ,  G06F3/0679 ,  G06F12/0223 ,  G06F2212/7205 ,  G11C16/0483 ,  G11C16/3431 ,  G11C16/349 ,  G11C16/3495 ,  G11C2211/5644 ,  G11C2211/5648

Abstract: A number of complimentary techniques for the read scrub process using adaptive counter management are presented. In one set of techniques, in addition to maintaining a cumulative read counter for a block, a boundary word line counter can also be maintained to track the number of reads to most recently written word line or word lines of a partially written block. Another set of techniques used read count threshold values that vary with the number of program/erase cycles that a block has undergone. Further techniques involve setting the read count threshold for a closed (fully written) block based upon the number reads it experienced prior to being closed. These techniques can also be applied at a sub-block, zone level.

Abstract translation: 提出了一些使用自适应计数器管理的读取擦除过程的免费技术。 在一组技术中，除了维持块的累积读计数器之外，还可以维持边界字行计数器以跟踪部分写入块的最近写入的字线或字线的读数。 使用的另一组技术读取计数阈值随着块所经历的编程/擦除周期数而变化。 进一步的技术涉及基于在关闭之前经历的数字读取来设置关闭（完全写入）块的读取计数阈值。 这些技术也可以应用于子区块级别。

公开(公告)号：US10102920B2

公开(公告)日：2018-10-16

申请号：US15237196

申请日：2016-08-15

Applicant: SanDisk Technologies LLC

Inventor： Philip Reusswig ,  Deepak Raghu ,  Zelei Guo ,  Chris Nga Yee Yip

IPC: G11C29/02 ,  G06F11/07 ,  G11C29/50 ,  G06F11/14 ,  G11C11/56 ,  G11C16/26

Abstract: A storage device with a memory may utilize an optimized read retry operation. A read retry table includes a number of read retry cases with updated read thresholds. The read thresholds in the read retry table may be used to avoid errors caused by shifting of charge levels. The optimization of read retry includes weighting or reordering of the read retry cases in the read retry table. The selection of a read retry case (and corresponding read thresholds) are determined based on the weighting or reordering.

公开(公告)号：US10026488B2

公开(公告)日：2018-07-17

申请号：US15240188

申请日：2016-08-18

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Phil Reusswig ,  Joanna Lai ,  Deepak Raghu ,  Grishma Shah ,  Nian Niles Yang

IPC: G11C16/34 ,  G06F3/06 ,  G06F11/10 ,  G11C29/52 ,  G11C16/22 ,  G11C16/26

Abstract: A non-volatile memory system includes technology for detecting read disturb in open blocks. In one embodiment, the system determines whether a particular block of non-volatile memory cells has been subjected to a minimum number of open block read operations and performs sensing operations for memory cells connected to an open word line of the particular block. The number of errors in the sensed data is determined. If the number of errors is greater than a limit, then the system takes an action to mitigate the read disturb.