公开(公告)号：US6140225A

公开(公告)日：2000-10-31

申请号：US104714

申请日：1998-06-25

申请人： Tatsuya Usami ,  Hidemitsu Aoki ,  Yasuaki Tsuchiya ,  Shinya Yamasaki

发明人： Tatsuya Usami ,  Hidemitsu Aoki ,  Yasuaki Tsuchiya ,  Shinya Yamasaki

IPC分类号： H01L21/302 ,  H01L21/033 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/312 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/522 ,  H01L21/4753 ,  H01L21/461

CPC分类号： H01L21/32139 ,  H01L21/0332 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3205 ,  H01L21/32136 ,  H01L21/76802 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/3124

摘要： A first insulating film with a dielectric constant lower than that of a silicon oxide film is formed on a semiconductor substrate. Next, a second insulating film, which has degrees of moisture absorption and deformation in an oxygen plasma process and exposure to a resist releasing solution equal to or less than those of a silicon oxide film, is formed on the first insulating film. Then, a third insulating film, which has degrees of moisture absorption and deformation in an oxygen plasma process and exposure to a resist releasing solution equal to or less than those of a silicon oxide film are formed on the second insulating film. Thereafter, the third insulating film is patterned to a prescribed pattern. An opening is formed in the first and second insulating films using the third insulating film as a mask.

摘要翻译： 在半导体衬底上形成介电常数比氧化硅膜低的第一绝缘膜。 接下来，在第一绝缘膜上形成第二绝缘膜，其在氧等离子体处理中具有吸湿变形程度，并且暴露于等于或小于氧化硅膜的抗蚀剂释放溶液。 然后，在第二绝缘膜上形成第三绝缘膜，其在氧等离子体处理中具有吸湿变形程度，并且暴露于等于或小于氧化硅膜的抗蚀剂释放溶液。 此后，将第三绝缘膜图案化为规定的图案。 使用第三绝缘膜作为掩模在第一绝缘膜和第二绝缘膜中形成开口。

公开(公告)号：US06225217B1

公开(公告)日：2001-05-01

申请号：US09439809

申请日：1999-11-12

申请人： Tatsuya Usami ,  Hidemitsu Aoki ,  Yasuaki Tsuchiya ,  Shinya Yamasaki

发明人： Tatsuya Usami ,  Hidemitsu Aoki ,  Yasuaki Tsuchiya ,  Shinya Yamasaki

IPC分类号： H01L214753

CPC分类号： H01L21/022 ,  H01L21/0212 ,  H01L21/02134 ,  H01L21/02164 ,  H01L21/02203 ,  H01L21/0332 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3124 ,  H01L21/3205 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76802 ,  H01L21/76811 ,  H01L21/76813

摘要： A first insulating film with a dielectric constant lower than that of a silicon oxide film is formed on a semiconductor substrate. Next, a metal film or a second insulating film, which has degrees of moisture absorption and deformation in an oxygen plasma process and exposure to a resist releasing solution equal to or less than those of a silicon oxide film, is formed on the first insulating film. Then, the metal film or the second insulating film is patterned to a prescribed pattern. An opening is formed in the first insulating film using the metal film or the second insulating film as a mask.

摘要翻译： 在半导体衬底上形成介电常数比氧化硅膜低的第一绝缘膜。 接着，在第一绝缘膜上形成金氧膜或第二绝缘膜，其在氧等离子体处理中具有湿度吸收和变形程度，并且暴露于等于或小于氧化硅膜的抗蚀剂释放溶液 。 然后，将金属膜或第二绝缘膜图案化为规定的图案。 使用金属膜或第二绝缘膜作为掩模在第一绝缘膜中形成开口。

公开(公告)号：US07268087B2

公开(公告)日：2007-09-11

申请号：US10900355

申请日：2004-07-28

申请人： Hidemitsu Aoki ,  Hiroaki Tomimori ,  Norio Okada ,  Tatsuya Usami ,  Koichi Ohto ,  Takamasa Tanikuni

发明人： Hidemitsu Aoki ,  Hiroaki Tomimori ,  Norio Okada ,  Tatsuya Usami ,  Koichi Ohto ,  Takamasa Tanikuni

IPC分类号： H01L21/324

CPC分类号： H01L21/02074 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3143 ,  H01L21/3144 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/321 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76883

摘要： In order to provide a manufacturing method of a semiconductor device which can improve the interconnection lifetime, while controlling the increase in resistance thereof, and, in addition, can raise the manufacturing stability; by applying a plasma treatment to the surface of a copper interconnection 17 with a source gas comprising a nitrogen element being used, a copper nitride layer 24 is formed, and thereafter a silicon nitride film 18 is formed. Hereat, under the copper nitride layer 24, a thin copper silicide layer 25 is formed.

摘要翻译： 为了提供能够提高互连寿命的半导体器件的制造方法，同时控制其电阻的增加，并且还可以提高制造稳定性; 通过使用包含氮元素的源气体在铜互连17的表面上施加等离子体处理，形成氮化铜层24，然后形成氮化硅膜18。 此时，在氮化铜层24的下方形成有薄的硅化铜层25。

公开(公告)号：US06787480B2

公开(公告)日：2004-09-07

申请号：US10071184

申请日：2002-02-11

申请人： Hidemitsu Aoki ,  Hiroaki Tomimori ,  Norio Okada ,  Tatsuya Usami ,  Koichi Ohto ,  Takamasa Tanikuni

发明人： Hidemitsu Aoki ,  Hiroaki Tomimori ,  Norio Okada ,  Tatsuya Usami ,  Koichi Ohto ,  Takamasa Tanikuni

IPC分类号： H01L21324

CPC分类号： H01L21/02074 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3143 ,  H01L21/3144 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/321 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76883

摘要： In order to provide a manufacturing method of a semiconductor device which can improve the interconnection lifetime, while controlling the increase in resistance thereof, and, in addition, can raise the manufacturing stability; by applying a plasma treatment to the surface of a copper interconnection 17 with a source gas comprising a nitrogen element being used, a copper nitride layer 24 is formed, and thereafter a silicon nitride film 18 is formed. Hereat, under the copper nitride layer 24, a thin copper silicide layer 25 is formed.

摘要翻译： 为了提供能够提高互连寿命的半导体器件的制造方法，同时控制其电阻的增加，并且还可以提高制造稳定性; 通过使用包含氮元素的源气体在铜互连17的表面上施加等离子体处理，形成氮化铜层24，然后形成氮化硅膜18。 此时，在氮化铜层24的下方形成有薄的硅化铜层25。

公开(公告)号：US06964724B2

公开(公告)日：2005-11-15

申请号：US10665148

申请日：2003-09-22

申请人： Shinya Yamasaki ,  Hidemitsu Aoki

发明人： Shinya Yamasaki ,  Hidemitsu Aoki

IPC分类号： B08B3/02 ,  B08B3/08 ,  C23F1/00 ,  C23F1/08 ,  C23F1/18 ,  C23F1/26 ,  C23G3/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/687 ,  B08B3/00 ,  C23C1/00

CPC分类号： C23F1/26 ,  B08B3/02 ,  C23F1/08 ,  C23F1/18 ,  C23G3/00 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67023 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/68707

摘要： An etching/cleaning apparatus is provided, which makes it possible to effectively remove an unnecessary material or materials existing on a semiconductor wafer without damaging the device area with good controllability. The apparatus comprises (a) a rotating means for holding a semiconductor wafer and for rotating the wafer in a horizontal plane; the wafer having a device area and a surface peripheral area on its surface; the surface peripheral area being located outside the device area; and (b) an edge nozzle for emitting an etching/cleaning liquid toward a surface peripheral area of the wafer. The etching/cleaning liquid emitted from the edge nozzle selectively removes an unnecessary material existing in the surface peripheral area. The etching/cleaning liquid emitted from the edge nozzle preferably has an emission direction oriented along a rotation direction of the wafer or outward with respect to a tangent of the wafer formed near a contact point of the liquid with the surface peripheral area of the wafer. A back nozzle may be additionally provided to emit an etching/cleaning liquid toward a back center of the wafer. A surface nozzle may be additionally provided to emit a protecting liquid toward a surface center of the wafer, covering the device area to protect the same against the etching/cleaning liquid.

摘要翻译： 提供了一种蚀刻/清洁装置，这使得可以有效地去除存在于半导体晶片上的不需要的材料或材料，而不会损害具有良好可控性的装置区域。 该装置包括：（a）用于保持半导体晶片并用于在水平面内旋转晶片的旋转装置; 所述晶片在其表面上具有器件面积和表面周边区域; 表面周边区域位于装置区域外部; 和（b）用于向晶片的表面周边区域喷射蚀刻/清洗液体的边缘喷嘴。 从边缘喷嘴排出的蚀刻/清洗液选择性地去除表面周边区域中存在的不需要的材料。 从边缘喷嘴排出的蚀刻/清洗液优选具有沿着晶片的旋转方向取向的发射方向或者相对于在液晶与晶片的表面周边区域的接触点附近形成的晶片的切线。 可以另外设置背喷嘴以朝向晶片的后中心发射蚀刻/清洁液体。 可以另外设置表面喷嘴以朝向晶片的表面中心发射保护液体，覆盖设备区域以保护其免受蚀刻/清洁液体的影响。

公开(公告)号：US6132592A

公开(公告)日：2000-10-17

申请号：US281475

申请日：1999-03-30

申请人： Shinya Yamasaki ,  Hidemitsu Aoki ,  Yasushi Sasaki

发明人： Shinya Yamasaki ,  Hidemitsu Aoki ,  Yasushi Sasaki

IPC分类号： H01L29/73 ,  H01L21/00 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3063 ,  H01L21/308 ,  H01L21/331 ,  H01L29/70 ,  H01L29/732

CPC分类号： H01L21/3063

摘要： A semiconductor device having a non-doped polysilicon and a doped polysilicon containing group III element is selectively wet-etched the non-doped polysilicon by using an etching liquid. The etching liquid is an electrolytic liquid obtained on a side of a cathode electrode and the electrolytic liquid is formed by electrolyzing a liquid containing pure water added with ammonium ion.

摘要翻译： 具有非掺杂多晶硅和含有III族元素的掺杂多晶硅的半导体器件通过使用蚀刻液体对非掺杂多晶硅进行湿式蚀刻。 蚀刻液是在阴极侧得到的电解液，通过电解含有添加有铵离子的纯水的液体来形成电解液。

公开(公告)号：US5994142A

公开(公告)日：1999-11-30

申请号：US915273

申请日：1997-08-20

申请人： Shinya Yamasaki ,  Hidemitsu Aoki

发明人： Shinya Yamasaki ,  Hidemitsu Aoki

IPC分类号： G01N1/10 ,  G01N1/28 ,  G01N1/34 ,  H01L21/66 ,  G01N33/00

CPC分类号： G01N1/34 ,  Y10T436/25 ,  Y10T436/25125

摘要： A sampling method for collecting metallic contaminants from a surface of a wafer having an oxide film thereon. A sampling vessel comprises a bottom having a concave inner surface and a convex outer surface, a cylindrical wall extending from the edge of the bottom, and a step section having a plane intercepting an arc plane of the cylindrical wall for adapting the orientation flat of the wafer. Sampling liquid containing 0.1 to 10% HF and hydrogen peroxide dissolves the oxide film and collects the metallic contaminants by swinging the sampling vessel on the convex outer surface of the bottom.

摘要翻译： 一种用于从其上具有氧化膜的晶片表面收集金属污染物的采样方法。 采样容器包括具有凹形内表面和凸形外表面的底部，从底部边缘延伸的圆柱形壁，以及具有截面圆柱形壁的弧形平面的平面的台阶部分，用于适应 晶圆。 含有0.1〜10％HF和过氧化氢的取样液体溶解氧化膜，并通过在底部的凸形外表面上摆动采样容器来收集金属污染物。

公开(公告)号：US07862658B2

公开(公告)日：2011-01-04

申请号：US11144692

申请日：2005-06-06

申请人： Shinya Yamasaki ,  Hidemitsu Aoki

发明人： Shinya Yamasaki ,  Hidemitsu Aoki

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： C23F1/26 ,  B08B3/02 ,  C23F1/08 ,  C23F1/18 ,  C23G3/00 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67023 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/68707

摘要： An etching/cleaning apparatus is provided, which makes it possible to effectively remove an unnecessary material or materials existing on a semiconductor wafer without damaging the device area with good controllability. The apparatus comprises (a) a rotating means for holding a semiconductor wafer and for rotating the wafer in a horizontal plane; the wafer having a device area and a surface peripheral area on its surface; the surface peripheral area being located outside the device area; and (b) an edge nozzle for emitting an etching/cleaning liquid toward a surface peripheral area of the wafer. The etching/cleaning liquid emitted from the edge nozzle selectively removes an unnecessary material existing in the surface peripheral area. The etching/cleaning liquid emitted from the edge nozzle preferably has an emission direction oriented along a rotation direction of the wafer or outward with respect to a tangent of the wafer formed near a contact point of the liquid with the surface peripheral area of the wafer. A back nozzle may be additionally provided to emit an etching/cleaning liquid toward a back center of the wafer. A surface nozzle may be additionally provided to emit a protecting liquid toward a surface center of the wafer, covering the device area to protect the same against the etching/cleaning liquid.

摘要翻译： 提供了一种蚀刻/清洁装置，这使得可以有效地去除存在于半导体晶片上的不需要的材料或材料，而不会损害具有良好可控性的装置区域。 该装置包括：（a）用于保持半导体晶片并用于在水平面内旋转晶片的旋转装置; 所述晶片在其表面上具有器件面积和表面周边区域; 表面周边区域位于装置区域外部; 和（b）用于向晶片的表面周边区域喷射蚀刻/清洗液体的边缘喷嘴。 从边缘喷嘴排出的蚀刻/清洗液选择性地去除表面周边区域中存在的不需要的材料。 从边缘喷嘴排出的蚀刻/清洗液优选具有沿着晶片的旋转方向取向的发射方向或者相对于在液晶与晶片的表面周边区域的接触点附近形成的晶片的切线。 可以另外设置背喷嘴以朝向晶片的后中心发射蚀刻/清洁液体。 可以另外设置表面喷嘴以朝向晶片的表面中心发射保护液体，覆盖设备区域以保护其免受蚀刻/清洁液体的影响。

公开(公告)号：US06833109B1

公开(公告)日：2004-12-21

申请号：US09534296

申请日：2000-03-23

申请人： Hidemitsu Aoki ,  Shinya Yamasaki

发明人： Hidemitsu Aoki ,  Shinya Yamasaki

IPC分类号： B01J1900

CPC分类号： H01L21/02074 ,  H01L21/67057 ,  Y10S134/902

摘要： In an apparatus, after completion of a CMP (i.e., chemical mechanical polishing) operation of a semiconductor wafer, the thus polished wafer is temporarily stored in a water tank before it is subjected to a post-CMP cleaning operation. During its storage period in the water tank, the wafer is prevented from being chemically attacked by an oxidizing agent contained in an abrasive used in the CMP operation. The apparatus includes: the water tank for storing the wafer therein; a pure water supply pipe for supplying pure water to the water tank; an anticorrosion agent supply pipe for supplying an anticorrosion agent to the pure water; a drain pipe connected with a lower portion of the water tank to discharge the water from the water tank; a return pipe for returning the discharged water to an upper portion of the water tank through a pump and a filter, the return pipe branching-off from the drain pipe; and, valves mounted on these pipes. The water tank is filled with pure water, to which an anticorrosion agent (i.e., benzotriazole) is added to prepare a solution in which the wafer is immersed after polishing.

摘要翻译： 在设备中，在完成半导体晶片的CMP（即化学机械抛光）操作之后，将这样抛光的晶片在进行后CMP清洗操作之前暂时储存在水箱中。 在水箱中的储存期间，防止晶片被包含在CMP操作中使用的磨料中的氧化剂所化学侵蚀。 该装置包括：用于将晶片存储在其中的水箱; 用于向水箱供应纯水的纯净水供水管; 用于向纯水供应防腐剂的防腐剂供给管; 与水箱的下部连接的排水管，以从水箱排出水; 用于通过泵和过滤器将排出的水返回到水箱的上部的回流管，该回流管从排水管分支; 和安装在这些管道上的阀。 水箱装满纯水，加入防腐剂（即苯并三唑）以制备抛光后晶片浸入的溶液。

公开(公告)号：US06683007B1

公开(公告)日：2004-01-27

申请号：US09525445

申请日：2000-03-14

申请人： Shinya Yamasaki ,  Hidemitsu Aoki

发明人： Shinya Yamasaki ,  Hidemitsu Aoki

IPC分类号： H01L21302

CPC分类号： C23F1/26 ,  B08B3/02 ,  C23F1/08 ,  C23F1/18 ,  C23G3/00 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67023 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/68707

摘要： An etching/cleaning method makes it possible to effectively remove unnecessary materials on a semiconductor wafer, having a surface peripheral area and a surface device area, without damaging the device area. The semiconductor is rotated in a horizontal plane while an etching/cleaning liquid is emitted by an edge nozzle toward the surface peripheral area, thereby selectively etching an unnecessary material in the surface peripheral area. The etching/cleaning liquid emitted from the edge nozzle preferably has an emission direction oriented along a rotation direction of the wafer or outward with respect to a tangent of the wafer formed near a contact point of the liquid with the surface peripheral area of the wafer.

摘要翻译： 蚀刻/清洁方法使得可以有效地去除具有表面周边区域和表面装置区域的半导体晶片上的不必要的材料，而不会损坏器件面积。 半导体在水平面上旋转，同时通过边缘喷嘴向表面周边区域喷射蚀刻/清洗液体，从而选择性地蚀刻表面周边区域中的不需要的材料。 从边缘喷嘴排出的蚀刻/清洗液优选具有沿着晶片的旋转方向取向的发射方向或者相对于在液晶与晶片的表面周边区域的接触点附近形成的晶片的切线。