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    Solvent systems for low dielectric constant polymeric materials
    1.
    发明授权
    Solvent systems for low dielectric constant polymeric materials 失效
    低介电常数聚合物材料的溶剂体系

    公开(公告)号：US06291628B1

    公开(公告)日：2001-09-18

    申请号：US09235141

    申请日：1999-01-21

    申请人： Tian-An Chen ,  Kreisler S. Y. Lau ,  Qiang Zhao

    发明人： Tian-An Chen ,  Kreisler S. Y. Lau ,  Qiang Zhao

    IPC分类号： C08G7902

    CPC分类号： H01L21/02118 ,  C08J3/095 ,  H01L21/02282 ,  H01L21/312 ,  Y10T428/31504

    摘要： A polymeric low dielectric constant solution includes a low dielectric constant polymer dissolved in an aromatic aliphatic ether solvent. The polymer preferably is a poly(arylene ether) and the solvent preferably is anisole, methylanisole, phenetole or mixtures thereof. A process for forming a dielectric film on a substrate by spin-coating the polymeric solution is also provided.

    摘要翻译： 聚合物低介电常数溶液包括溶解在芳族脂族醚溶剂中的低介电常数聚合物。 聚合物优选为聚（亚芳基醚），溶剂优选为苯甲醚，甲基苯甲醚，苯乙醚或其混合物。 还提供了通过旋涂聚合物溶液在基底上形成电介质膜的方法。

    Wafer supporting system for semiconductor wafers
    6.
    发明申请
    Wafer supporting system for semiconductor wafers 审中-公开
    晶圆支撑系统用于半导体晶圆

    公开(公告)号：US20050147489A1

    公开(公告)日：2005-07-07

    申请号：US10745923

    申请日：2003-12-24

    申请人： Tian-An Chen ,  Daoqiang Lu

    发明人： Tian-An Chen ,  Daoqiang Lu

    IPC分类号： B66C17/08 ,  H01L21/68

    CPC分类号： H01L21/6836 ,  H01L2221/68327

    摘要： The embodiments of the present invention include coating a semiconductor wafer with a polymer layer and attaching the polymer layer to a support substrate with a tape. The tape has at least two adhesive sides, and at least one radiation sensitive side. The radiation sensitive side facilitates release of the tape.

    摘要翻译： 本发明的实施例包括用聚合物层涂覆半导体晶片并且用胶带将聚合物层附着到支撑基板上。 胶带具有至少两个粘合剂侧面和至少一个辐射敏感侧。 辐射敏感侧有利于胶带的释放。

    Method of fabricating a bismaleimide (BMI) ASA sacrifical material for an integrated circuit air gap dielectric
    8.
    发明授权
    Method of fabricating a bismaleimide (BMI) ASA sacrifical material for an integrated circuit air gap dielectric 失效
    制造用于集成电路气隙电介质的双马来酰亚胺（BMI）ASA牺牲材料的方法

    公开(公告)号：US06872654B2

    公开(公告)日：2005-03-29

    申请号：US10330619

    申请日：2002-12-26

    申请人： Tian-An Chen ,  Kevin P. O'Brien

    发明人： Tian-An Chen ,  Kevin P. O'Brien

    IPC分类号： H01L21/312 ,  H01L21/768 ,  H01L21/4763

    CPC分类号： H01L21/7682 ,  H01L21/02118 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/312

    摘要： A method for implementing a bismaleimide (BMI) polymer as a sacrificial material for an integrated circuit air gap dielectric. The method of one embodiment comprises forming a first and second metal interconnect lines on a substrate, wherein at least a portion of the first and second metal interconnect lines extend parallel to one another and wherein a trough is located between the parallel portion of said first and second metal interconnect lines. A layer of bismaleimide is spin coated over the substrate. The layer of bismaleimide is polished with a chemical mechanical polish, wherein the trough remains filled with the bismaleimide. A diffusion layer is formed over the substrate. The substrate is heated to activate a pyrolysis of the bismaleimide. An air gap is formed in the trough in the space vacated by the bismaleimide.

    摘要翻译： 一种用于实现用于集成电路气隙电介质的双马来酰亚胺（BMI）聚合物作为牺牲材料的方法。 一个实施例的方法包括在衬底上形成第一和第二金属互连线，其中第一和第二金属互连线的至少一部分彼此平行延伸，并且其中槽位于所述第一和第二金属互连线的平行部分之间， 第二金属互连线。 将一层双马来酰亚胺旋涂在基材上。 用化学机械抛光剂抛光双马来酰亚胺层，其中槽保持充满双马来酰亚胺。 在衬底上形成扩散层。 加热底物以活化双马来酰亚胺的热解。 在由双马来酰亚胺空出的空间中的槽中形成气隙。