摘要:
A method for implementing a bismaleimide (BMI) polymer as a sacrificial material for an integrated circuit air gap dielectric. The method of one embodiment comprises forming a first and second metal interconnect lines on a substrate, wherein at least a portion of the first and second metal interconnect lines extend parallel to one another and wherein a trough is located between the parallel portion of said first and second metal interconnect lines. A layer of bismaleimide is spin coated over the substrate. The layer of bismaleimide is polished with a chemical mechanical polish, wherein the trough remains filled with the bismaleimide. A diffusion layer is formed over the substrate. The substrate is heated to activate a pyrolysis of the bismaleimide. An air gap is formed in the trough in the space vacated by the bismaleimide.
摘要:
A semiconductor structure may be covered with a thermally decomposing film. That film may then be covered by a sealing cover. Subsequently, the thermally decomposing material may be decomposed, forming a cavity.
摘要:
Carborane may be used as a precursor to form low dielectric constant dielectrics. The carborane material may be modified to enable it to be deposited by chemical vapor deposition.
摘要:
An embodiment of the present invention is a technique to form a resin. A mixture is formed by a curing agent dissolved in the epoxy resin. The epoxy resin contains a first rigid rod mesogen. The curing agent contains a second rigid rod mesogen and one of a hydroxyl, amine, and anhydride.
摘要:
Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a conformal layer of a water soluble nanopowder on a wafer, and then scribing the wafer.
摘要:
The embodiments of the present invention include coating a semiconductor wafer with a polymer layer and attaching the polymer layer to a support substrate with a tape. The tape has at least two adhesive sides, and at least one radiation sensitive side. The radiation sensitive side facilitates release of the tape.
摘要:
In some embodiments, a method includes providing a composition which includes a base at least partially filled with filler particles and applying the composition as an underfill composition. At least some of the filler particles are electrically conductive.
摘要:
An oxidizing slurry for removal of low dielectric constant materials. The slurry is formed utilizing non-oxidizing particles with a separate oxidizing agent, oxidizing particles alone or reducible abrasive particles with a compatible oxidizing agent. The particles can be formed of a metal oxide, nitride, or carbide material, by itself or mixtures thereof, or can be coated on a core material such as silicon dioxide or can be coformed therewith. A preferred oxidizing slurry is multi-modal in particle size distribution. Although developed for utilization in CMP semiconductor processing the oxidizing slurry of the present invention also can be utilized for other high precision polishing processes.
摘要:
An embodiment of the present invention is a technique to form a resin. A mixture is formed by a curing agent dissolved in the epoxy resin. The epoxy resin contains a first rigid rod mesogen. The curing agent contains a second rigid rod mesogen and one of a hydroxyl, amine, and anhydride.
摘要:
A method for low temperature bumping is disclosed. A resin capable of being cross-linked by free-radical or cationic polymerization at low temperature is provided. Electrically conductive particles are then added to the resin to form a mixture. The mixture is then activated by heat or exposure to light to polymerize the mixture. In an alternative embodiment, a vinyl ether resin is used, to which electrically conductive particles are added. The mixture is polymerized by exposure to light.