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公开(公告)号：US10053773B2
公开(公告)日：2018-08-21
申请号：US14635978
申请日：2015-03-02
IPC分类号： C23C14/00 , C23C14/32 , C23C16/44 , H01J37/305 , H01J37/32
CPC分类号： C23C16/4405 , C23C16/4401 , H01J37/3053 , H01J37/32091 , H01J37/32862 , H01J2237/022
摘要： There is provided a cleaning method for removing a first deposit, formed on an upper electrode through an etching of a metal layer containing a metal, by using a plasma generated between a lower electrode of a lower structure and the upper electrode in a processing chamber of a plasma processing apparatus. The method includes a step of colliding ions with the first deposit formed on the upper electrode and a step of removing a second deposit, which is generated by said colliding and formed on the lower structure. Further, a cycle including the step of colliding and the step of removing is repeated multiple times.
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公开(公告)号：US09419211B2
公开(公告)日：2016-08-16
申请号：US14065597
申请日：2013-10-29
CPC分类号： H01L43/12 , G11C11/161 , H01J37/32091
摘要： A gas for an etching process and a treatment process of a metal stacked film in which an insulating layer is interposed between two layers of magnetic materials can be optimized. An etching method of etching a multilayered film including a metal stacked film in which an insulating layer is interposed between a first magnetic layer and a second magnetic layer includes etching the metal stacked film with plasma generated by supplying a gas containing at least C, O, and H into a processing chamber; and treating the metal stacked film with plasma generated by supplying a gas containing at least a CF4 gas into the processing chamber.
摘要翻译： 可以优化用于蚀刻工艺的气体和其中绝缘层插入在两层磁性材料之间的金属叠层膜的处理过程。 蚀刻包括在第一磁性层和第二磁性层之间插入有绝缘层的金属层叠膜的多层膜的蚀刻方法包括：通过供给至少含有C，O的气体产生的等离子体蚀刻金属层叠膜， 和H进入处理室; 以及通过将至少含有CF 4气体的气体供给到所述处理室中而产生的等离子体处理所述金属层叠膜。
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公开(公告)号：US09412618B2
公开(公告)日：2016-08-09
申请号：US14776886
申请日：2014-04-09
IPC分类号： H01L21/311 , H01L21/02 , H01J37/32 , B81C1/00 , H01L21/027 , G03F7/00
CPC分类号： H01L21/31133 , B81C1/00031 , B81C2201/0149 , G03F7/0002 , H01J37/32091 , H01J37/32577 , H01L21/02118 , H01L21/02351 , H01L21/0271 , H01L21/31138 , H01L21/31144
摘要： A pattern forming method of forming a pattern on an underlying layer of a target object includes forming a block copolymer layer, which includes a first polymer and a second polymer and is configured to be self-assembled, on the underlying layer; processing the target object to form a first region containing the first polymer and a second region containing the second polymer in the block copolymer layer; etching the second region partway in a thickness direction thereof in a capacitively coupled plasma processing apparatus after the processing of the target object; generating secondary electrons from an upper electrode of the plasma processing apparatus by applying a negative DC voltage to the upper electrode and irradiating the secondary electrons onto the target object, after the etching of the second region; and additionally etching the second region in the plasma processing apparatus after the irradiating of the secondary electrons.
摘要翻译： 在目标物体的下层上形成图案的图案形成方法包括在下层上形成包含第一聚合物和第二聚合物并被构造成自组装的嵌段共聚物层; 处理目标物体以形成含有第一聚合物的第一区域和在嵌段共聚物层中含有第二聚合物的第二区域; 在对象物体的处理之后，在电容耦合等离子体处理装置中在其厚度方向的中间蚀刻第二区域; 在蚀刻第二区域之后，通过向上部电极施加负的DC电压并将二次电子照射到目标物体上，从等离子体处理装置的上部电极产生二次电子; 并且另外在照射二次电子之后蚀刻等离子体处理装置中的第二区域。
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公开(公告)号：US20150132970A1
公开(公告)日：2015-05-14
申请号：US14396032
申请日：2013-04-16
CPC分类号： H01J37/32513 , H01J37/32 , H01J37/32357 , H01J37/32422 , H01J37/32449 , H01J37/32724 , H01J37/32834 , H01J2237/334 , H01L21/67069 , H01L43/12
摘要： An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply unit. The processing chamber defines a space, and the partition plate is arranged within the processing chamber and divides the space into a plasma generating space and a substrate processing space, while suppressing permeation of ions and vacuum ultraviolet rays. The plasma source generates a plasma in the plasma forming space. The mounting table is arranged in the substrate processing space to mount the target object thereon.
摘要翻译： 在被处理对象物中包含的蚀刻对象膜被蚀刻时，沉积的反应产物的处理装置具备：处理室; 隔板 等离子体源 安装台; 第一处理气体供应单元; 第二处理气体供应单元。 处理室限定空间，并且分隔板布置在处理室内，并且将空间分成等离子体产生空间和基板处理空间，同时抑制离子的渗透和真空紫外线。 等离子体源在等离子体形成空间中产生等离子体。 安装台布置在基板处理空间中以将目标物体安装在其上。
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公开(公告)号：US10975468B2
公开(公告)日：2021-04-13
申请号：US16043375
申请日：2018-07-24
IPC分类号： C23C16/44 , H01J37/305 , H01J37/32
摘要： There is provided a cleaning method for removing a first deposit, formed on an upper electrode through an etching of a metal layer containing a metal, by using a plasma generated between a lower electrode of a lower structure and the upper electrode in a processing chamber of a plasma processing apparatus. The method includes a step of colliding ions with the first deposit formed on the upper electrode and a step of removing a second deposit, which is generated by said colliding and formed on the lower structure. Further, a cycle including the step of colliding and the step of removing is repeated multiple times.
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公开(公告)号：US10923329B2
公开(公告)日：2021-02-16
申请号：US16567642
申请日：2019-09-11
摘要： An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply unit. The processing chamber defines a space, and the partition plate is arranged within the processing chamber and divides the space into a plasma generating space and a substrate processing space, while suppressing permeation of ions and vacuum ultraviolet rays. The plasma source generates a plasma in the plasma forming space. The mounting table is arranged in the substrate processing space to mount the target object thereon.
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公开(公告)号：US10236162B2
公开(公告)日：2019-03-19
申请号：US15826059
申请日：2017-11-29
发明人： Shigeru Tahara , Eiichi Nishimura , Mikhail Baklanov , Liping Zhang , Jean-Francois de Marneffe
IPC分类号： H01L21/311 , H01J37/32
摘要： A method of etching a porous film is provided. The method includes supplying a first gas into a processing chamber of a plasma processing apparatus in which an object to be processed including a porous film is accommodated, and generating a plasma of a second gas for etching the porous film in the processing chamber. The first gas is a processing gas having a saturated vapor pressure of less than or equal to 133.3 Pa at a temperature of a stage on which the object is mounted in the processing chamber, or includes the processing gas. In the step of supplying the first gas, no plasma is generated, and a partial pressure of the processing gas which is supplied into the processing chamber is set to be greater than or equal to 20% of the saturated vapor pressure.
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公开(公告)号：US09803286B2
公开(公告)日：2017-10-31
申请号：US14512638
申请日：2014-10-13
发明人： Eiichi Nishimura , Keiichi Shimoda , Kei Nakayama
IPC分类号： H01L21/3065 , C23F4/00 , H01L21/3213
CPC分类号： C23F4/00 , H01L21/32136 , H01L21/32139
摘要： Provided is a method of etching a copper layer. The method includes generating plasma of a processing gas within a processing container which accommodates an object to be processed that includes the copper layer and a metal mask formed on the copper layer. The metal mask contains titanium. In addition, the processing gas includes CH4 gas, oxygen gas, and a noble gas. In an exemplary embodiment, the metal mask may include a layer made of TiN.
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公开(公告)号：US09660182B2
公开(公告)日：2017-05-23
申请号：US14387655
申请日：2013-04-22
发明人： Takashi Sone , Daisuke Urayama , Masato Kushibiki , Nao Koizumi , Wataru Kume , Eiichi Nishimura , Fumiko Yamashita
CPC分类号： H01L43/12 , H01J37/32009 , H01J37/32091 , H01J37/32165 , H01J37/32568 , H01J37/32807 , H01J37/32825 , H01J37/32834 , H01J37/32908 , H01J2237/18 , H01J2237/327 , H01J2237/3341
摘要： A plasma processing method of etching a multilayered material having a structure where a first magnetic layer 105 and a second magnetic layer 103 are stacked with an insulating layer 104 therebetween is performed by a plasma processing apparatus 10 including a processing chamber 12 where a processing space S is formed; and a gas supply unit 44 of supplying a processing gas into the processing space, and includes a first etching process where the first magnetic layer is etched by supplying a first processing gas and generating plasma, and the first etching process is stopped on a surface of the insulating layer; and a second etching process where a residue Z is removed by supplying a second processing gas and generating plasma. The first magnetic layer and the second magnetic layer contain CoFeB, the first processing gas contains Cl2, and the second processing gas contains H2.
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公开(公告)号：US09647206B2
公开(公告)日：2017-05-09
申请号：US15030406
申请日：2014-09-19
CPC分类号： H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： Provided is a method for etching an etching target layer of a workpiece. The workpiece has a mask on the etching target layer. The etching target layer and the mask are formed from respective materials for which etching efficiency by a plasma of a rare gas having an atomic number greater than an atomic number of argon is higher than etching efficiency for the materials by a plasma of argon gas. The mask is formed from a material having a melting point higher than that of the etching target layer. The method includes (a) exposing the workpiece to a plasma of a first process gas containing a first rare gas having an atomic number greater than the atomic number of argon, and (b) exposing the workpiece to a plasma of a second process gas containing a second rare gas having an atomic number less than the atomic number of argon.
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