公开(公告)号：US10676823B2

公开(公告)日：2020-06-09

申请号：US15825310

申请日：2017-11-29

Applicant: Tokyo Electron Limited

Inventor： Ryota Sakane ,  Takashi Kitazawa ,  Hiroshi Nagahata ,  Hideyuki Kobayashi ,  Koji Yamagishi

IPC: C23C16/455 ,  C23C16/505 ,  C23C16/40

Abstract: A processing method includes a first process of exposing a first sensor to a processing space within a chamber and blocking a second sensor from the processing space within the chamber; a second process of supplying a first processing gas containing a precursor gas into the chamber; a third process of controlling a state within the chamber based on a measurement value of the first sensor; a fourth process of blocking the first sensor from the processing space within the chamber and exposing the second sensor to the processing space within the chamber; a fifth process of supplying a second processing gas containing a reactant gas into the chamber; and a sixth process of controlling the state within the chamber based on a measurement value of the second sensor. The first process to the six process are repeatedly performed multiple times.

公开(公告)号：US10374358B2

公开(公告)日：2019-08-06

申请号：US14597312

申请日：2015-01-15

Applicant: Tokyo Electron Limited

Inventor： Ryota Sakane ,  Dai Kitagawa

IPC: H01J37/32 ,  H01R13/53 ,  H01R13/631 ,  C23C16/458 ,  C23C16/509 ,  H01R103/00

Abstract: A feeder-cover structure includes a power feeder including a socket and a plug fitted together, a cover structure that covers and seals the power feeder, and a supply mechanism that supplies dry air or an inert gas into the cover structure. A gap is formed between the power feeder and the cover structure such that the dry air or the inert gas is supplied through the gap into the cover structure.

公开(公告)号：US11170991B2

公开(公告)日：2021-11-09

申请号：US15891501

申请日：2018-02-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryota Sakane

IPC: H01L21/3065 ,  H01L21/02 ,  H01J37/32 ,  H05H1/46

Abstract: Disclosed is a plasma processing apparatus including: a first electrode to which a high frequency power is supplied; a second electrode that functions as a counter electrode with respect to the first electrode; a plurality of dielectric units arranged between plasma generated between the first electrode and the second electrode, and the second electrode; and a controller that controls an impedance between the plasma and the second electrode via each of the dielectric units by independently controlling a position or a dielectric constant of each of the dielectric units.

公开(公告)号：US11242930B2

公开(公告)日：2022-02-08

申请号：US16353479

申请日：2019-03-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryota Sakane

IPC: F16J15/02

Abstract: A seal structure includes an elastic body and a cap which are located in a boundary between a first component and a second component that seal and define a gas flow path. The flow path is defined by a first through hole in the first component and a second through hole in the second component, the elastic body has a loop-shaped second opening which overlaps with a first opening of the first through hole, and the cap covers the elastic body such that the first opening, the second opening, and a third opening of the cap overlap with each other. The cap is fitted into a groove in the first surface and is in close contact with the second surface. The cap and second component are in close contact with each other to have slidability.

公开(公告)号：US10832891B2

公开(公告)日：2020-11-10

申请号：US15831564

申请日：2017-12-05

Applicant: Tokyo Electron Limited

Inventor： Ryota Sakane ,  Hideyuki Kobayashi ,  Hiroshi Nagahata ,  Jungwoo Na

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  H01L21/033 ,  C23C16/458 ,  C23C16/505 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/683

Abstract: A plasma processing apparatus includes a process chamber, and a pedestal provided in the process chamber and configured to hold a substrate. The plasma processing apparatus includes a first gas supply part configured to be able to supply a first gas from a location facing the pedestal, and a radio frequency power source configured to convert the first gas to plasma. A shield part to block the first gas converted to plasma is provided around the pedestal. The plasma processing apparatus further includes an evacuation part configured to evacuate the process chamber through the shield part, and a second gas supply part configured to be able to supply a second gas to a space between the shield part and the evacuation part.

公开(公告)号：US20180158650A1

公开(公告)日：2018-06-07

申请号：US15831564

申请日：2017-12-05

Applicant: Tokyo Electron Limited

Inventor： Ryota Sakane ,  Hideyuki Kobayashi ,  Hiroshi Nagahata ,  Jungwoo Na

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/505 ,  H01J37/32449 ,  H01J37/32651 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0332 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/67069 ,  H01L21/6831 ,  H01L21/6833

Abstract: A plasma processing apparatus includes a process chamber, and a pedestal provided in the process chamber and configured to hold a substrate. The plasma processing apparatus includes a first gas supply part configured to be able to supply a first gas from a location facing the pedestal, and a radio frequency power source configured to convert the first gas to plasma. A shield part to block the first gas converted to plasma is provided around the pedestal. The plasma processing apparatus further includes an evacuation part configured to evacuate the process chamber through the shield part, and a second gas supply part configured to be able to supply a second gas to a space between the shield part and the evacuation part.

公开(公告)号：US09991100B2

公开(公告)日：2018-06-05

申请号：US15413631

申请日：2017-01-24

Applicant: Tokyo Electron Limited

Inventor： Ryota Sakane

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/3299 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32568 ,  H01J37/32642 ,  H01J2237/3343 ,  H01L21/3065 ,  H01L21/67069

Abstract: The plasma processing apparatus includes a first electrode to which high frequency power is applied, a second electrode that functions as a counter electrode with respect to the first electrode, and a controller configured to control distribution of plasma generated between the first electrode and the second electrode. The first electrode is, for example, an upper electrode. The second electrode includes a lower electrode, and a peripheral portion disposed around the lower electrode. The peripheral portion includes a plurality of split electrodes divided in a peripheral direction. For each split electrode, the controller controls an impedance between the plasma and a ground via the split electrode.

公开(公告)号：US20180148838A1

公开(公告)日：2018-05-31

申请号：US15825310

申请日：2017-11-29

Applicant: Tokyo Electron Limited

Inventor： Ryota Sakane ,  Takashi Kitazawa ,  Hiroshi Nagahata ,  Hideyuki Kobayashi ,  Koji Yamagishi

IPC: C23C16/455

CPC classification number: C23C16/45557 ,  C23C16/401 ,  C23C16/45504 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/505

Abstract: A processing method includes a first process of exposing a first sensor to a processing space within a chamber and blocking a second sensor from the processing space within the chamber; a second process of supplying a first processing gas containing a precursor gas into the chamber; a third process of controlling a state within the chamber based on a measurement value of the first sensor; a fourth process of blocking the first sensor from the processing space within the chamber and exposing the second sensor to the processing space within the chamber; a fifth process of supplying a second processing gas containing a reactant gas into the chamber; and a sixth process of controlling the state within the chamber based on a measurement value of the second sensor. The first process to the six process are repeatedly performed multiple times.